CN105699408B - A kind of sample stage for electron backscatter diffraction instrument - Google Patents
A kind of sample stage for electron backscatter diffraction instrument Download PDFInfo
- Publication number
- CN105699408B CN105699408B CN201610235494.0A CN201610235494A CN105699408B CN 105699408 B CN105699408 B CN 105699408B CN 201610235494 A CN201610235494 A CN 201610235494A CN 105699408 B CN105699408 B CN 105699408B
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- China
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- sample
- standard specimen
- groove
- sample stage
- monocrystalline silicon
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/205—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials using diffraction cameras
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/309—Accessories, mechanical or electrical features support of sample holder
Abstract
The embodiment of the invention discloses a kind of sample stage for electron backscatter diffraction instrument, it is related to rock sample analysis testing field, it can sample size be big, sample of poorly conductive carries out the testing requirement for having standard specimen guaranteeing to meet while the safety of experiment.The stationary plane and pedestal that the present invention includes: sample stage are provided with groove in 70 ° of angles on stationary plane, groove for installing and fixing chip sample, coincide by the size of groove and chip sample；The depth of groove and the consistency of thickness of chip sample, when chip sample is installed in a groove, the surface to be measured of chip sample and the surface of stationary plane are in same plane.The standard specimen groove for installing monocrystalline silicon standard specimen, the depth of standard specimen groove and the consistency of thickness of monocrystalline silicon standard specimen are provided on stationary plane, when monocrystalline silicon standard specimen is mounted in standard specimen groove, the surface to be measured of monocrystalline silicon standard specimen and the surface of stationary plane are in same plane.The present invention big, poorly conductive sample suitable for size has standard specimen test.
Description
Technical field
The present invention relates to rock sample analysis testing field more particularly to a kind of samples for electron backscatter diffraction instrument
Platform.
Background technique
Electron backscatter diffraction (Electron backscatter diffraction, EBSD) technology is reversed by observation
The diffraction image of scattered electron provides micron-sized crystal space orientation information, can accurately and quickly determine mineral crystal
The spatial distribution of each mineral in lattice preferred orientation and multiphase rock, therefore have in fields such as material science, geology, metallurgy
Be widely applied.
Currently used EBSD using scanning electron microscope as carrier, by one to the fluorescence phosphorus screen being imaged and one with
It is formed to absorb the high-sensitive CCD digital camera of diffraction image, back scattering (BSE) probe and EBSD probe therein are located respectively
In the Z axis and Y-axis of laboratory coordinate system.During the experiment, need by sample stage by the sample finely polished with high angle by
It pops one's head in further towards BSE probe and EBSD to experiment distance after 70 ° of step inclination, is in later 70 ° using high-power electron beam bombardment
The diffraction image that bombardment generates is transmitted to terminal computer later, so that it is determined that crystal type, orientation, crystal by sample surfaces
Between the features such as angle (position to difference), crystal size, crystal boundary type and coincidence lattice grain boundary distribution.
Due to the sample of most of geological course, it will usually be fabricated to petrographic thin section or the biggish bulk sample of thickness.
When five axis motors of the rotating mechanism using sample stage are rotated, between sample surfaces and BSE probe and EBSD probe
Distance is very short, in particular for sample size when big, poorly conductive sample, needs to control five axis motors and extremely visits close to BSE
Head and EBSD probe, are just able to satisfy the demand of experiment test.The space of movement when sample stage is gradually tilted with high angle is very
It is limited, and shift position is larger when sample size is big, it is easy to BSE probe or EBSD probe are collided, the safety of experiment is reduced.
Summary of the invention
The embodiment of the present invention provides a kind of sample stage for electron backscatter diffraction instrument, can be in the peace for guaranteeing experiment
Meet that sample size is big, sample of poorly conductive carries out the testing requirement for having standard specimen while full property.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
The stationary plane and pedestal of the sample stage are in 70 ° of angles, groove are provided on the stationary plane, the groove is for pacifying
Chip sample is filled and fixes, the size of the groove and the chip sample is coincide；The depth of the groove and the sheet-like
The consistency of thickness of product, when the chip sample is mounted in the groove, the surface to be measured of the chip sample with it is described solid
The surface for determining face is in same plane.
Be provided with the standard specimen groove for installing monocrystalline silicon standard specimen on the stationary plane, the depth of the standard specimen groove with it is described
The consistency of thickness of monocrystalline silicon standard specimen, when the monocrystalline silicon standard specimen is mounted in the standard specimen groove, the monocrystalline silicon standard specimen
Surface to be measured and the surface of the stationary plane are in same plane.
The middle part of the sample stage is provided with a cube hole, and the cube hole is for installing bulk sample.It is described
The inner surface filled solid conducting resinl of cube hole, when the bulk sample contacts the solid conduction glue and is mounted on described
Cube.
The sample stage is made of pure copper material, or is made of the material that electric conductivity is more than or equal to fine copper.
Sample stage provided in an embodiment of the present invention for electron backscatter diffraction instrument, stationary plane and pedestal be fixedly installed and
Angle is 70 °, realizes immobilizing for the Z axis of sample stage during the experiment, and only moves X and Y-axis, to avoid passing through
Sample surfaces and BSE probe collision problem and the collision problem of reduction and EBSD probe when five axis motor rotation stationary planes, especially
It can sample size be big, sample of poorly conductive carries out the test need for having standard specimen guaranteeing to meet while the safety of experiment
It asks.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the top view of sample stage provided in an embodiment of the present invention；
Fig. 2 is the side view of sample stage provided in an embodiment of the present invention；
Each label in attached drawing indicates: sample stage -1, stationary plane -2, pedestal -3, groove -4, chip sample -5, monocrystalline silicon
Standard specimen -6, standard specimen groove -7, cube hole -8, bulk sample -9, solid conduction glue -10.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.Embodiments of the present invention are described in more detail below, the embodiment is shown
Example is shown in the accompanying drawings, and in which the same or similar labels are throughly indicated same or similar element or has identical or class
Like the element of function.It is exemplary below with reference to the embodiment of attached drawing description, for explaining only the invention, and cannot
It is construed to limitation of the present invention.Those skilled in the art of the present technique are appreciated that unless expressly stated, odd number shape used herein
Formula " one ", "one", " described " and "the" may also comprise plural form.It is to be further understood that specification of the invention
Used in wording " comprising " refer to that there are the feature, integer, step, operation, element and/or component, but it is not excluded that
In the presence of or add other one or more features, integer, step, operation, element, component and/or their group.It is used herein
Wording "and/or" includes one or more associated any cells for listing item and all combinations.The art technology
Personnel are appreciated that unless otherwise defined all terms (including technical terms and scientific terms) used herein have and this
The identical meaning of the general understanding of those of ordinary skill in field that the present invention belongs to.It should also be understood that such as general dictionary
Defined in those terms should be understood that and have a meaning that is consistent with the meaning in the context of the prior art, and unless
It defines, will not be explained in an idealized or overly formal meaning as here.
The embodiment of the present invention provides a kind of sample stage for electron backscatter diffraction instrument, sample stage as shown in Figure 1
The configuration state of configuration state or sample stage shown in Fig. 2 under experimental state, in which:
The stationary plane 2 and pedestal 3 of sample stage 1 are in 70 ° of angles, groove 4 are provided on stationary plane 2, groove 4 is for installing and consolidating
Determine chip sample 5, groove 4 and the size of chip sample 5 are coincide.Wherein, 3 shape of pedestal and scanning electron microscope example of sample stage 1
The shape of indoor sample slot exactly matches, so that during the experiment, sample stage 1 can be clamped securely on sample cell.
The depth of groove 4 and the consistency of thickness of chip sample 5, when chip sample 5 is mounted in groove 4, chip sample 5
Surface to be measured and the surface of stationary plane 2 be in same plane.
Further, the standard specimen groove 7 for installing monocrystalline silicon standard specimen 6, the depth of standard specimen groove 7 are provided on stationary plane 2
With the consistency of thickness of monocrystalline silicon standard specimen 6, when monocrystalline silicon standard specimen 6 is mounted in standard specimen groove 7, the table to be measured of monocrystalline silicon standard specimen 6
Face and the surface of stationary plane 2 are in same plane.
Wherein, standard specimen groove 7 is close to the edge of groove 4, so that monocrystalline silicon standard specimen 6 and chip sample 5 are in same flat
Face, in order to which sample can be calibrated under the same operating distance by monocrystalline silicon standard specimen 6 during the experiment.
In the present embodiment, at the middle part of sample stage 1, it is provided with a cube hole 8, cube hole 8 is used for mounting blocks
Shape sample 9.
Further, during the experiment, the inner surface filled solid conducting resinl 10 of cube hole 8, when bulk sample 9
When contacting solid conduction glue 10 and being mounted in cube hole 8, the surface to be measured of bulk sample 9 and the table of monocrystalline silicon standard specimen 6
Face is in same plane.
In the present embodiment, sample stage 1 is made of pure copper material, or is more than or equal to the material system of fine copper by electric conductivity
At can satisfy that sample size is big, thin slice of poorly conductive is had especially to increase the electric conductivity between sample and instrument
The testing requirement of standard specimen.
Optionally, the pedestal 3 of sample stage 1 is made of pure copper material, or is more than or equal to the material system of fine copper by electric conductivity
At.Part in sample stage 1 other than pedestal 3 is made of an electrically conducting material.
Sample stage provided in an embodiment of the present invention for electron backscatter diffraction instrument, stationary plane and pedestal be fixedly installed and
Angle is 70 °, realizes immobilizing for the Z axis of sample stage during the experiment, and only moves X and Y-axis, to avoid passing through
Sample surfaces and the collision problem that BSE pops one's head in or EBSD pops one's head in when five axis motor rotation stationary planes, more particularly to guarantee to test
Safety while meet that sample size is big, sample of poorly conductive carries out the testing requirement for having standard specimen.
All the embodiments in this specification are described in a progressive manner, same and similar portion between each embodiment
Dividing may refer to each other, and each embodiment focuses on the differences from other embodiments.Especially for equipment reality
For applying example, since it is substantially similar to the method embodiment, so describing fairly simple, related place is referring to embodiment of the method
Part explanation.The above description is merely a specific embodiment, but protection scope of the present invention is not limited to
This, anyone skilled in the art in the technical scope disclosed by the present invention, the variation that can readily occur in or replaces
It changes, should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claim
Subject to enclosing.
Claims (3)
1. a kind of sample stage for electron backscatter diffraction instrument characterized by comprising
The stationary plane and pedestal of the sample stage are in 70 ° of angles, groove are provided on the stationary plane, the groove is for installing simultaneously
The size of fixed chip sample, the groove and the chip sample is coincide；
The consistency of thickness of the depth of the groove and the chip sample, when the chip sample is mounted in the groove,
The surface to be measured of the chip sample and the surface of the stationary plane are in same plane；
The standard specimen groove for installing monocrystalline silicon standard specimen, the depth of the standard specimen groove and the monocrystalline are provided on the stationary plane
The consistency of thickness of silicon standard specimen, when the monocrystalline silicon standard specimen is mounted in the standard specimen groove, the monocrystalline silicon standard specimen it is to be measured
Surface and the surface of the stationary plane are in same plane；
The middle part of the sample stage is provided with a cube hole, and the cube hole is for installing bulk sample；
The inner surface filled solid conducting resinl of the cube hole, when the bulk sample contacts the solid conduction glue and pacifies
When in the cube hole, the surface of the surface to be measured of the bulk sample and the monocrystalline silicon standard specimen is in same flat
Face；
Wherein, standard specimen groove is close to the edge of groove, so that monocrystalline silicon standard specimen and chip sample are in same plane, in order to
Sample can be calibrated under the same operating distance by monocrystalline silicon standard specimen during the experiment.
2. sample stage according to claim 1, which is characterized in that the sample stage is made of pure copper material, or by leading
The material for being electrically greater than fine copper is made.
3. sample stage according to claim 1, which is characterized in that the pedestal of the sample stage is made of pure copper material, or
Person is made of the material that electric conductivity is greater than fine copper；
Part in the sample stage other than pedestal is made of an electrically conducting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610235494.0A CN105699408B (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for electron backscatter diffraction instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610235494.0A CN105699408B (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for electron backscatter diffraction instrument |
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| Publication Number | Publication Date |
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| CN105699408A CN105699408A (en) | 2016-06-22 |
| CN105699408B true CN105699408B (en) | 2019-03-29 |
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| CN201610235494.0A Active CN105699408B (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for electron backscatter diffraction instrument |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107607564B (en) * | 2017-07-20 | 2019-12-20 | 武汉大学 | Electron back scattering diffractometer |
| CN113390907A (en) * | 2021-06-17 | 2021-09-14 | 西北工业大学 | Sample stage for electron back scattering diffraction |
Citations (3)
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| CN101916706A (en) * | 2010-08-03 | 2010-12-15 | 深圳市金洲精工科技股份有限公司 | Sample platform of scanning electronic microscope and scanning electronic microscope |
| CN202282324U (en) * | 2011-10-25 | 2012-06-20 | 郑州大学 | Sample stage for field emission semi-naked magnetic scanning electron microscope |
| CN204575570U (en) * | 2015-05-05 | 2015-08-19 | 株洲钻石切削刀具股份有限公司 | Scanning electron microscope electron back scattering diffraction sample sample stage |
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| KR100967407B1 (en) * | 2008-06-05 | 2010-07-01 | 한국표준과학연구원 | Sample Holder of X-ray Diffractometer |
| CN201556600U (en) * | 2009-09-17 | 2010-08-18 | 宝山钢铁股份有限公司 | Scanning electronic microscope electronic backscatter diffraction test sample stand |
| CN102103093B (en) * | 2009-12-22 | 2014-09-03 | 鞍钢股份有限公司 | Method for detecting orientation of large-sized crystal grains |
| JP2011204367A (en) * | 2010-03-24 | 2011-10-13 | Sumitomo Metal Mining Co Ltd | Sample stand for electron microscope |
| CN202351191U (en) * | 2011-11-22 | 2012-07-25 | 南京钢铁股份有限公司 | Sample holder used for EBSD (electron back-scatter diffraction) of scanning electron microscope |
| CN103674841B (en) * | 2013-12-09 | 2016-04-27 | 中国电子科技集团公司第十一研究所 | The device of carrying tellurium zinc cadmium sample and the method for Zn component in test tellurium zinc cadmium |
| CN203824939U (en) * | 2013-12-19 | 2014-09-10 | 江苏省沙钢钢铁研究院有限公司 | Transmission-type sample table for electron back scattering diffraction (EBSD) experiment |
| CN103837557B (en) * | 2014-01-21 | 2016-03-30 | 首钢总公司 | EBSD is adopted to characterize the method for hot rolled steel plate cross section iron scale micromechanism |
| CN205049496U (en) * | 2015-10-21 | 2016-02-24 | 北京交通大学 | Multi -functional sample platform of scanning electron microscope electron backscattering |
| CN205720060U (en) * | 2016-04-15 | 2016-11-23 | 南京大学 | A kind of sample stage for EBSD instrument |
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- 2016-04-15 CN CN201610235494.0A patent/CN105699408B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916706A (en) * | 2010-08-03 | 2010-12-15 | 深圳市金洲精工科技股份有限公司 | Sample platform of scanning electronic microscope and scanning electronic microscope |
| CN202282324U (en) * | 2011-10-25 | 2012-06-20 | 郑州大学 | Sample stage for field emission semi-naked magnetic scanning electron microscope |
| CN204575570U (en) * | 2015-05-05 | 2015-08-19 | 株洲钻石切削刀具股份有限公司 | Scanning electron microscope electron back scattering diffraction sample sample stage |
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| CN105699408A (en) | 2016-06-22 |
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