CN105699408A - Sample stage for electron backscatter diffraction instruments - Google Patents
Sample stage for electron backscatter diffraction instruments Download PDFInfo
- Publication number
- CN105699408A CN105699408A CN201610235494.0A CN201610235494A CN105699408A CN 105699408 A CN105699408 A CN 105699408A CN 201610235494 A CN201610235494 A CN 201610235494A CN 105699408 A CN105699408 A CN 105699408A
- Authority
- CN
- China
- Prior art keywords
- sample
- groove
- sample stage
- standard specimen
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000001887 electron backscatter diffraction Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 10
- 238000002474 experimental method Methods 0.000 abstract description 5
- 239000011435 rock Substances 0.000 abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 4
- 238000004458 analytical method Methods 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 76
- 239000013078 crystal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000003100 immobilizing effect Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/205—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials using diffraction cameras
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/309—Accessories, mechanical or electrical features support of sample holder
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
An embodiment of the invention discloses a sample stage for electron backscatter diffraction instruments, and relates to the field of rock sample analysis and tests. The sample stage is characterized in that a 70-degree included angle is formed between a fixing plane of the sample stage and a base, a groove is formed in the fixing plane and is used for mounting and fixing a slice sample, and the size of the groove is matched with that of the slice sample; the depth of the groove is consistent with the thickness of the slice sample, and to-be-measured surfaces of the slice sample and the surface of the fixing plane are positioned on the same plane when the slice sample is mounted in the groove. A standard sample groove for mounting a single-crystal silicon standard sample is formed in the fixing plane, the depth of the standard sample groove is consistent with the thickness of the single-crystal silicon standard sample, to-be-measured surfaces of the single-crystal silicon standard sample and the surface of the fixing plane are positioned on the same plane when the single-crystal silicon standard sample is mounted in the standard sample groove. The sample stage has the advantages that the safety of experiments can be guaranteed, and requirements on carrying out tests with the standard sample on samples with large sizes and poor electric conductivity can be met; the sample stage is applicable to the tests with the standard sample on the samples with the large sizes and the poor electric conductivity.
Description
Technical field
The present invention relates to rock sample and analyze field tests, particularly relate to a kind of sample stage for EBSD instrument。
Background technology
EBSD (Electronbackscatterdiffraction, EBSD) technology provides micron-sized crystal space orientation information by observing the diffraction image of back scattered electron, the spatial distribution of each mineral in the lattice preferred orientation of mineral crystal and heterogeneous rock can be determined accurately and quickly, therefore have a wide range of applications in fields such as material science, geology, metallurgy。
EBSD conventional at present is with scanning electron microscope for carrier, the high-sensitive CCD digital camera being used for absorbing diffraction image by a fluorescence phosphorus screen in order to imaging and one forms, and back scattering therein (BSE) probe and EBSD probe are respectively at Z axis and the Y-axis of laboratory coordinate system。In experimentation, require over and pop one's head in testing distance further towards BSE probe and EBSD after the sample finely polished progressively is tilted 70 ° with high angle by sample stage, adopt high-power electron beam bombardment in 70 ° of sample surfaces afterwards, the diffraction image transmission afterwards bombardment produced to terminal computer, the feature such as (position to difference), crystal size, crystal boundary type and coincidence lattice grain boundary distribution so that it is determined that angle between crystal type, orientation, crystal。
Sample due to major part geological course, it will usually be fabricated to petrographic thin section or the bulk sample that thickness is bigger。When using the five axle motors of rotating mechanism of sample stage to rotate, distance between sample surfaces and BSE probe and EBSD probe is very short, during the sample of, poorly conductive big in particular for sample size, need to control five axle motors extremely near BSE probe and EBSD probe, the demand of experiment test could be met。The space of movement when sample stage progressively tilts with high angle is very limited, and when sample size is big, shift position is bigger, it is easy to collision BSE probe or EBSD probe, reduces the safety of experiment。
Summary of the invention
Embodiments of the invention provide a kind of sample stage for EBSD instrument, it is possible to meet while ensureing the safety of experiment that sample size is big, poorly conductive sample carries out the testing requirement that there is standard specimen。
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that
The stationary plane of described sample stage and base are 70 ° of angles, and described stationary plane has groove, and described groove is used for installing and fixing chip sample, and described groove is identical with the size of described chip sample；The consistency of thickness of the degree of depth of described groove and described chip sample, when described chip sample is arranged in described groove, the surface to be measured of described chip sample and the surface of described stationary plane are in same plane。
Described stationary plane has the standard specimen groove for installing monocrystal silicon standard specimen, the consistency of thickness of the degree of depth of described standard specimen groove and described monocrystal silicon standard specimen, when described monocrystal silicon standard specimen is arranged in described standard specimen groove, the surface to be measured of described monocrystal silicon standard specimen and the surface of described stationary plane are in same plane。
The middle part of described sample stage, has a cube hole, and described cube hole is used for installing bulk sample。The inner surface of described cube hole fills solid conduction glue, when described bulk sample contacts described solid conduction glue and is arranged on described cube。
Described sample stage is made up of pure copper material, or is made up be more than or equal to the material of fine copper of electric conductivity。
The sample stage for EBSD instrument that the embodiment of the present invention provides, stationary plane and base are fixedly installed and angle is 70 °, achieve immobilizing of in the experimentation Z axis of sample stage, and only move X and Y-axis, rotate sample surfaces and BSE during stationary plane pop one's head in collision problem reducing and the collision problem of EBSD probe thus being avoided by five axle motors, enable in particular to meet while ensureing the safety tested sample size greatly, the sample of poorly conductive carry out the testing requirement that there is standard specimen。
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in the embodiment of the present invention, the accompanying drawing used required in embodiment will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings。
The top view of the sample stage that Fig. 1 provides for the embodiment of the present invention；
The side view of the sample stage that Fig. 2 provides for the embodiment of the present invention；
Each label in accompanying drawing represents: sample stage-1, stationary plane-2, base-3, groove-4, chip sample-5, monocrystal silicon standard specimen-6, standard specimen groove-7, cube hole-8, bulk sample-9, solid conduction glue-10。
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail。Embodiments of the present invention are described in more detail below, and the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of same or like function from start to finish。The embodiment described below with reference to accompanying drawing is illustrative of, and is only used for explaining the present invention, and is not construed as limiting the claims。Those skilled in the art of the present technique are appreciated that unless expressly stated, and singulative used herein " ", " one ", " described " and " being somebody's turn to do " may also comprise plural form。Should be further understood that, the wording " including " used in the description of the present invention refers to there is described feature, integer, step, operation, element and/or assembly, but it is not excluded that existence or adds other features one or more, integer, step, operation, element, assembly and/or their group。Wording "and/or" used herein includes one or more any cell listing item being associated and all combinations。Those skilled in the art of the present technique are appreciated that unless otherwise defined, all terms used herein (include technical term and scientific terminology) and have with the those of ordinary skill in art of the present invention be commonly understood by identical meaning。Should also be understood that in such as general dictionary, those terms of definition should be understood that have the meaning consistent with the meaning in the context of prior art, and unless defined as here, will not explain by idealization or excessively formal implication。
The embodiment of the present invention a kind of sample stage for EBSD instrument of offer, the configuration state of sample stage as shown in Figure 1, or the configuration state that the sample stage shown in Fig. 2 is under experimental state, wherein:
The stationary plane 2 of sample stage 1 and base 3, in 70 ° of angles, stationary plane 2 have groove 4, and groove 4 is used for installing and fixing chip sample 5, and groove 4 is identical with the size of chip sample 5。Wherein, base 3 shape of sample stage 1 is mated completely with the shape of scanning electron microscope example indoor sample groove, thus in experimentation, sample stage 1 can be clamped securely on sample cell。
The consistency of thickness of the degree of depth of groove 4 and chip sample 5, when chip sample 5 is arranged in groove 4, the surface to be measured of chip sample 5 and the surface of stationary plane 2 are in same plane。
Further, stationary plane 2 has the standard specimen groove 7 for installing monocrystal silicon standard specimen 6, the consistency of thickness of the degree of depth of standard specimen groove 7 and monocrystal silicon standard specimen 6, when monocrystal silicon standard specimen 6 is arranged in standard specimen groove 7, the surface to be measured of monocrystal silicon standard specimen 6 and the surface of stationary plane 2 are in same plane。
Wherein, standard specimen groove 7 is close to the edge of groove 4 so that monocrystal silicon standard specimen 6 and chip sample 5 are in same plane, in order in experimentation, sample can be calibrated by monocrystal silicon standard specimen 6 under same operating distance。
In the present embodiment, at the middle part of sample stage 1, having a cube hole 8, cube hole 8 is used for installing bulk sample 9。
Further, in experimentation, the inner surface of cube hole 8 fills solid conduction glue 10, and when bulk sample 9 contacts solid conduction glue 10 and is arranged in cube hole 8, the surface to be measured of bulk sample 9 and the surface of monocrystal silicon standard specimen 6 are in same plane。
In the present embodiment, sample stage 1 is made up of pure copper material, or is made up be more than or equal to the material of fine copper of electric conductivity, to increase the electric conductivity between sample and instrument, especially disclosure satisfy that sample size is big, poorly conductive thin slice carries out the testing requirement that there is standard specimen。
Optionally, the base 3 of sample stage 1 is made up of pure copper material, or is made up be more than or equal to the material of fine copper of electric conductivity。In sample stage 1, the part except base 3 is made of an electrically conducting material。
The sample stage for EBSD instrument that the embodiment of the present invention provides, stationary plane and base are fixedly installed and angle is 70 °, achieve immobilizing of in the experimentation Z axis of sample stage, and only move X and Y-axis, thus being avoided by five axle motors to rotate the collision problem of sample surfaces and BSE probe or EBSD probe during stationary plane, enable in particular to meet while ensureing the safety of experiment that sample size is big, poorly conductive sample carries out the testing requirement that there is standard specimen。
Each embodiment in this specification all adopts the mode gone forward one by one to describe, between each embodiment identical similar part mutually referring to, what each embodiment stressed is the difference with other embodiments。Especially for apparatus embodiments, owing to it is substantially similar to embodiment of the method, so describing fairly simple, relevant part illustrates referring to the part of embodiment of the method。The above; being only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any those familiar with the art is in the technical scope that the invention discloses; the change that can readily occur in or replacement, all should be encompassed within protection scope of the present invention。Therefore, protection scope of the present invention should be as the criterion with scope of the claims。
Claims (6)
1. the sample stage for EBSD instrument, it is characterised in that including:
The stationary plane of described sample stage and base are 70 ° of angles, and described stationary plane has groove, and described groove is used for installing and fixing chip sample, and described groove is identical with the size of described chip sample；
The consistency of thickness of the degree of depth of described groove and described chip sample, when described chip sample is arranged in described groove, the surface to be measured of described chip sample and the surface of described stationary plane are in same plane。
2. sample stage according to claim 1, it is characterized in that, described stationary plane has the standard specimen groove for installing monocrystal silicon standard specimen, the consistency of thickness of the degree of depth of described standard specimen groove and described monocrystal silicon standard specimen, when described monocrystal silicon standard specimen is arranged in described standard specimen groove, the surface to be measured of described monocrystal silicon standard specimen and the surface of described stationary plane are in same plane。
3. sample stage according to claim 2, it is characterised in that the middle part of described sample stage, has a cube hole, and described cube hole is used for installing bulk sample。
4. the sample stage according to Claims 2 or 3, it is characterized in that, the inner surface of described cube hole fills solid conduction glue, when described bulk sample contacts described solid conduction glue and is arranged in described cube hole, the surface of the surface to be measured of described bulk sample and described monocrystal silicon standard specimen is in same plane。
5. sample stage according to claim 1, it is characterised in that described sample stage is made up of pure copper material, or be made up be more than or equal to the material of fine copper of electric conductivity。
6. sample stage according to claim 1, it is characterised in that the base of described sample stage is made up of pure copper material, or be made up be more than or equal to the material of fine copper of electric conductivity；
In described sample stage, the part except base is made of an electrically conducting material。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610235494.0A CN105699408B (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for electron backscatter diffraction instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610235494.0A CN105699408B (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for electron backscatter diffraction instrument |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105699408A true CN105699408A (en) | 2016-06-22 |
| CN105699408B CN105699408B (en) | 2019-03-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610235494.0A Active CN105699408B (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for electron backscatter diffraction instrument |
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| Country | Link |
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| CN (1) | CN105699408B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107607564A (en) * | 2017-07-20 | 2018-01-19 | 武汉大学 | EBSD instrument |
| CN113390907A (en) * | 2021-06-17 | 2021-09-14 | 西北工业大学 | Sample stage for electron back scattering diffraction |
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| CN201556600U (en) * | 2009-09-17 | 2010-08-18 | 宝山钢铁股份有限公司 | Scanning electronic microscope electronic backscatter diffraction test sample stand |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107607564A (en) * | 2017-07-20 | 2018-01-19 | 武汉大学 | EBSD instrument |
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| CN113390907A (en) * | 2021-06-17 | 2021-09-14 | 西北工业大学 | Sample stage for electron back scattering diffraction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105699408B (en) | 2019-03-29 |
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