CN205720060U - A kind of sample stage for EBSD instrument - Google Patents
A kind of sample stage for EBSD instrument Download PDFInfo
- Publication number
- CN205720060U CN205720060U CN201620321716.6U CN201620321716U CN205720060U CN 205720060 U CN205720060 U CN 205720060U CN 201620321716 U CN201620321716 U CN 201620321716U CN 205720060 U CN205720060 U CN 205720060U
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- China
- Prior art keywords
- sample
- standard specimen
- groove
- sample stage
- stationary plane
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- 238000001887 electron backscatter diffraction Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 9
- 238000002474 experimental method Methods 0.000 abstract description 5
- 239000011435 rock Substances 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 73
- 239000013078 crystal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003100 immobilizing effect Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Landscapes
- Sampling And Sample Adjustment (AREA)
Abstract
This utility model embodiment discloses a kind of sample stage for EBSD instrument, relates to rock sample and analyzes field tests, it is possible to meet while ensureing the safety of experiment that sample size is big, the sample of poorly conductive carries out the testing requirement that there is standard specimen.This utility model includes: the stationary plane of sample stage and base are 70 ° of angles, and stationary plane has groove, and groove is used for installing and fixing chip sample, and groove coincide with the size of chip sample；The degree of depth of groove and the consistency of thickness of chip sample, when chip sample is installed in a groove, the surface to be measured of chip sample and the surface of stationary plane are in same plane.Having the consistency of thickness of the standard specimen groove for installing monocrystal silicon standard specimen, the degree of depth of standard specimen groove and monocrystal silicon standard specimen on stationary plane, when monocrystal silicon standard specimen is arranged in standard specimen groove, the surface to be measured of monocrystal silicon standard specimen and the surface of stationary plane are in same plane.This utility model is applicable to that size is big, the standard specimen that has of the sample of poorly conductive is tested.
Description
Technical field
This utility model relates to rock sample and analyzes field tests, particularly relates to one and spreads out for electron backscattered
Penetrate the sample stage of instrument.
Background technology
EBSD (Electron backscatter diffraction, EBSD) technology is passed through
The diffraction image of observation back scattered electron provides micron-sized crystal space orientation information, it is possible to the fastest
Determine the spatial distribution of each mineral in the lattice preferred orientation of mineral crystal and heterogeneous rock, therefore at material promptly
The fields such as material science, geology, metallurgy have a wide range of applications.
At present conventional EBSD with scanning electron microscope as carrier, by a fluorescence phosphorus screen in order to imaging and
One high-sensitive CCD digital camera composition being used for absorbing diffraction image, back scattering therein (BSE) is visited
Head and EBSD probe are respectively at Z axis and the Y-axis of laboratory coordinate system.In experimentation, need to pass through sample
Platform is popped one's head in further towards BSE probe and EBSD after the sample finely polished progressively is tilted 70 ° with high angle
To testing distance, high-power electron beam is used to bombard in 70 ° of sample surfaces, afterwards by spreading out that bombardment produces afterwards
Penetrate image transmitting to terminal computer, so that it is determined that angle (position is to difference) between crystal type, orientation, crystal,
The features such as crystal size, crystal boundary type and coincidence lattice grain boundary distribution.
Sample due to major part geological course, it will usually be fabricated to petrographic thin section, or the block that thickness is bigger
Shape sample.When using the five axle motors of rotating mechanism of sample stage to rotate, sample surfaces is visited with BSE
Distance between head and EBSD probe is the shortest, during the sample of, poorly conductive big in particular for sample size,
Need to control five axle motors extremely to pop one's head near BSE probe and EBSD, the demand of experiment test could be met.
The space of movement when sample stage progressively tilts with high angle is very limited, and shift position when sample size is big
Bigger, it is easy to collision BSE probe or EBSD probe, reduce the safety of experiment.
Utility model content
Embodiment of the present utility model provides a kind of sample stage for EBSD instrument, it is possible to protecting
Meet while confirming the safety tested that sample size is big, the sample of poorly conductive carries out the test need that there are standard specimen
Ask.
For reaching above-mentioned purpose, embodiment of the present utility model adopts the following technical scheme that
The stationary plane of described sample stage and base are 70 ° of angles, and described stationary plane has groove, described recessed
Groove is used for installing and fixing chip sample, and described groove coincide with the size of described chip sample；Described groove
The consistency of thickness of the degree of depth and described chip sample, when described chip sample is arranged in described groove, institute
The surface on the surface to be measured and described stationary plane of stating chip sample is in same plane.
The standard specimen groove for installing monocrystal silicon standard specimen, the degree of depth of described standard specimen groove is had on described stationary plane
With the consistency of thickness of described monocrystal silicon standard specimen, when described monocrystal silicon standard specimen is arranged in described standard specimen groove,
The surface to be measured of described monocrystal silicon standard specimen and the surface of described stationary plane are in same plane.
The middle part of described sample stage, has a cube hole, and described cube hole is used for installing block sample
Product.The inner surface of described cube hole fills solid conduction glue, when described bulk sample contacts described solid
Conducting resinl is also arranged on described cube.
Described sample stage is made up of pure copper material, or is made up more than or equal to the material of fine copper of electric conductivity.
The sample stage for EBSD instrument that this utility model embodiment provides, stationary plane and base
It is fixedly installed and angle is 70 °, it is achieved that the immobilizing of the Z axis of sample stage in experimentation, and only move
Dynamic X and Y-axis, thus be avoided by sample surfaces and BSE when five axle motors rotate stationary plane and pop one's head in collision problem also
Reduce and the collision problem of EBSD probe, enable in particular to meet sample chi while ensureing the safety of experiment
Very little big, the sample of poorly conductive carries out the testing requirement having standard specimen.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in this utility model embodiment, below will be to institute in embodiment
The accompanying drawing used is needed to be briefly described, it should be apparent that, the accompanying drawing in describing below is only this practicality
Some novel embodiments, for those of ordinary skill in the art, before not paying creative work
Put, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
The top view of the sample stage that Fig. 1 provides for this utility model embodiment；
The side view of the sample stage that Fig. 2 provides for this utility model embodiment；
Each label in accompanying drawing represents: sample stage-1, stationary plane-2, base-3, groove-4, chip sample-5,
Monocrystal silicon standard specimen-6, standard specimen groove-7, cube hole-8, bulk sample-9, solid conduction glue-10.
Detailed description of the invention
For making those skilled in the art be more fully understood that the technical solution of the utility model, below in conjunction with the accompanying drawings and
This utility model is described in further detail by detailed description of the invention.This utility model is described in more detail below
Embodiment, the example of described embodiment is shown in the drawings, the most same or similar
Label represents same or similar element or has the element of same or like function.Below with reference to accompanying drawing
The embodiment described is exemplary, is only used for explaining this utility model, and can not be construed to this practicality
Novel restriction.Those skilled in the art of the present technique are appreciated that unless expressly stated, odd number used herein
Form " one ", " one ", " described " and " being somebody's turn to do " may also comprise plural form.Should manage further
Solve, the wording used in description of the present utility model " include " referring to existing described feature, integer,
Step, operation, element and/or assembly, but it is not excluded that existence or add other features one or more,
Integer, step, operation, element, assembly and/or their group.Wording "and/or" bag used herein
Include one or more any cell listing item being associated and all combinations.Those skilled in the art of the present technique
Being appreciated that unless otherwise defined, all terms used herein (include technical term and scientific terminology)
Have with the those of ordinary skill in this utility model art be commonly understood by identical meaning.Also should
Being understood by, those terms defined in such as general dictionary should be understood that have with prior art upper
The meaning that meaning hereinafter is consistent, and unless defined as here, will not by idealization or the most just
The implication of formula is explained.
This utility model embodiment provides a kind of sample stage for EBSD instrument, as shown in Figure 1
The configuration state of sample stage, or the configuration state that the sample stage shown in Fig. 2 is under experimental state, wherein:
The stationary plane 2 of sample stage 1 in 70 ° of angles, stationary plane 2 has groove 4 with base 3, and groove 4 is used for
Installing and fixing chip sample 5, groove 4 coincide with the size of chip sample 5.Wherein, the base 3 of sample stage 1
Shape is mated completely with the shape of scanning electron microscope example indoor sample groove, thus in experimentation, sample stage 1
Can be clamped securely on sample cell.
The degree of depth of groove 4 and the consistency of thickness of chip sample 5 are when chip sample 5 is arranged in groove 4, thin
The surface to be measured of sheet sample 5 and the surface of stationary plane 2 are in same plane.
Further, stationary plane 2 has the standard specimen groove 7 for installing monocrystal silicon standard specimen 6, standard specimen groove 7
The consistency of thickness of the degree of depth and monocrystal silicon standard specimen 6, when monocrystal silicon standard specimen 6 is arranged in standard specimen groove 7, monocrystalline
The surface to be measured of silicon standard specimen 6 and the surface of stationary plane 2 are in same plane.
Wherein, standard specimen groove 7 is close to the edge of groove 4 so that monocrystal silicon standard specimen 6 is in chip sample 5
Same plane, in order to sample can pass through monocrystal silicon standard specimen 6 under same operating distance in experimentation
Calibrate.
In the present embodiment, at the middle part of sample stage 1, having a cube hole 8, cube hole 8 is used for
Bulk sample 9 is installed.
Further, in experimentation, the inner surface of cube hole 8 fills solid conduction glue 10, works as block
When shape sample 9 contacts solid conduction glue 10 and is arranged in cube hole 8, the surface to be measured of bulk sample 9 with
The surface of monocrystal silicon standard specimen 6 is in same plane.
In the present embodiment, sample stage 1 is made up of pure copper material, or is more than or equal to the material of fine copper by electric conductivity
Material is made, and to increase the electric conductivity between sample and instrument, especially disclosure satisfy that sample size is big, conducts electricity
Property difference thin slice carry out the testing requirement that there is standard specimen.
Optionally, the base 3 of sample stage 1 is made up of pure copper material, or by electric conductivity more than or equal to fine copper
Material is made.In sample stage 1, the part in addition to base 3 is made of an electrically conducting material.
The sample stage for EBSD instrument that this utility model embodiment provides, stationary plane and base
It is fixedly installed and angle is 70 °, it is achieved that the immobilizing of the Z axis of sample stage in experimentation, and only move
Dynamic X and Y-axis, thus it is avoided by sample surfaces and BSE probe or EBSD probe when five axle motors rotate stationary plane
Collision problem, enable in particular to meet while ensureing the safety of experiment that sample size is big, poorly conductive
Sample carry out the testing requirement that there is standard specimen.
Each embodiment in this specification all uses the mode gone forward one by one to describe, phase homophase between each embodiment
As part see mutually, what each embodiment stressed is different from other embodiments it
Place.For apparatus embodiments, owing to it is substantially similar to embodiment of the method, so describing
Fairly simple, relevant part sees the part of embodiment of the method and illustrates.The above, be only this practicality
Novel detailed description of the invention, but protection domain of the present utility model is not limited thereto, any is familiar with this skill
The technical staff in art field in the technical scope that this utility model discloses, the change that can readily occur in or replace
Change, all should contain within protection domain of the present utility model.Therefore, protection domain of the present utility model should
Should be as the criterion with scope of the claims.
Claims (6)
1. the sample stage for EBSD instrument, it is characterised in that including:
The stationary plane of described sample stage and base are 70 ° of angles, and described stationary plane has groove, and described groove is used for installing and fixing chip sample, and described groove coincide with the size of described chip sample；
The degree of depth of described groove and the consistency of thickness of described chip sample, when described chip sample is arranged in described groove, the surface to be measured of described chip sample and the surface of described stationary plane are in same plane.
Sample stage the most according to claim 1, it is characterized in that, the standard specimen groove for installing monocrystal silicon standard specimen is had on described stationary plane, the degree of depth of described standard specimen groove and the consistency of thickness of described monocrystal silicon standard specimen, when described monocrystal silicon standard specimen is arranged in described standard specimen groove, the surface to be measured of described monocrystal silicon standard specimen and the surface of described stationary plane are in same plane.
Sample stage the most according to claim 2, it is characterised in that the middle part of described sample stage, has a cube hole, and described cube hole is used for installing bulk sample.
Sample stage the most according to claim 3, it is characterized in that, the inner surface of described cube hole fills solid conduction glue, when described bulk sample contacts described solid conduction glue and is arranged in described cube hole, the surface to be measured of described bulk sample is in same plane with the surface of described monocrystal silicon standard specimen.
Sample stage the most according to claim 1, it is characterised in that described sample stage is made up of pure copper material, or be made up more than or equal to the material of fine copper of electric conductivity.
Sample stage the most according to claim 1, it is characterised in that the base of described sample stage is made up of pure copper material, or be made up more than or equal to the material of fine copper of electric conductivity；
In described sample stage, the part in addition to base is made of an electrically conducting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620321716.6U CN205720060U (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for EBSD instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620321716.6U CN205720060U (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for EBSD instrument |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205720060U true CN205720060U (en) | 2016-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620321716.6U Expired - Fee Related CN205720060U (en) | 2016-04-15 | 2016-04-15 | A kind of sample stage for EBSD instrument |
Country Status (1)
| Country | Link |
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| CN (1) | CN205720060U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105699408A (en) * | 2016-04-15 | 2016-06-22 | 南京大学 | Sample stage for electron backscatter diffraction instruments |
| CN111982943A (en) * | 2020-08-05 | 2020-11-24 | 上海大学 | EBSD test sample platform and application thereof |
| CN115128109A (en) * | 2022-09-02 | 2022-09-30 | 北京化工大学 | EBSD sample stage based on orientation calibration and correction and image acquisition method |
-
2016
- 2016-04-15 CN CN201620321716.6U patent/CN205720060U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105699408A (en) * | 2016-04-15 | 2016-06-22 | 南京大学 | Sample stage for electron backscatter diffraction instruments |
| CN111982943A (en) * | 2020-08-05 | 2020-11-24 | 上海大学 | EBSD test sample platform and application thereof |
| CN115128109A (en) * | 2022-09-02 | 2022-09-30 | 北京化工大学 | EBSD sample stage based on orientation calibration and correction and image acquisition method |
| CN115128109B (en) * | 2022-09-02 | 2022-11-25 | 北京化工大学 | EBSD sample stage based on orientation calibration and correction and image acquisition method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161123 Termination date: 20190415 |