CN204575570U - Scanning electron microscope electron back scattering diffraction sample sample stage - Google Patents

Scanning electron microscope electron back scattering diffraction sample sample stage Download PDF

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Publication number
CN204575570U
CN204575570U CN201520283542.4U CN201520283542U CN204575570U CN 204575570 U CN204575570 U CN 204575570U CN 201520283542 U CN201520283542 U CN 201520283542U CN 204575570 U CN204575570 U CN 204575570U
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China
Prior art keywords
sample
electron microscope
scanning electron
back scattering
scattering diffraction
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CN201520283542.4U
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Inventor
李园园
徐银超
高跃红
林江华
温光华
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Zhuzhou Cemented Carbide Cutting Tools Co Ltd
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Zhuzhou Cemented Carbide Cutting Tools Co Ltd
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Abstract

The utility model discloses a kind of scanning electron microscope electron back scattering diffraction sample sample stage, comprise base, base comprises three-dimensional portion and is positioned at the trapezoidal portion in three-dimensional portion, base angle, trapezoidal portion is 65 °-70.5 °, a wherein inclined side in trapezoidal portion is provided with the cylindrical recesses can held and inlay sample, fixedly sample is inlayed by securing member, another inclined side is provided with the rectangular recess that can hold and not inlay sample, do not inlay sample by compressing member is fixing, cylindrical recesses and rectangular recess are respectively perpendicular to the inclined side at respective place.The utility model has the advantages such as structure is simple, test sample registration, scan image are stable.

Description

Scanning electron microscope electron back scattering diffraction sample sample stage
Technical field
The utility model relates to a kind of sample platform of scanning electronic microscope, particularly relates to a kind of scanning electron microscope electron back scattering diffraction sample sample stage.
Background technology
Be equipped with that the scanning electron microscope equipment of Electron Back-Scattered Diffraction (EBSD) system is increasingly extensive to be applied in the Micro-Structure Analysis of various crystalline material, as metal, pottery, geology and mineral etc., the microscopic appearance of crystalline material, structure and distribution of orientations can be represented simultaneously, obtain the important informations such as crystallite dimension, crystal boundary type, texture, Entropy density deviation, strain.
According to the path of backscattered electron outgoing under electron beam effect, need specimen surface to be tilted 70 ° to strengthen diffracted signal, therefore by sample stage sample accurately to be located and fixation is very crucial.EBSD sample stage conventional is at present the thin cylinder table on the band 70 ° of pre-dumping inclined-planes being applicable to small size EBSD sample and manual tilted circle platform, the main surface relying on two-sided carbonaceous conductive glue sample to be fixed on pre-tilt or manual inclination sample stage.Carbonaceous conductive glue is under artificial pressing effect, by sample together with sample stage bonding, conducting resinl recovers there is small deformation afterwards, under other 70 ° of tilt condition, sample Action of Gravity Field causes sample, with conducting resinl, small being separated occurs, these trickle deformation recoveries and gravity effect cause the scanning electron microscope visual field to drift about, especially, under high magnification, direction is uncertain; Moreover EBSD analyzes needs 1-5 hour usually, and under long-time accumulative effect, EBSD analyzed area is constantly drifted about, and the distortion such as crystal grain is usually distorted, Tension and Compression, the experimental data obtained loses true and reliable property.Apparently, these two kinds of sample stages are not suitable for that size is comparatively large, gravity is comparatively large, the irregular sample of sample shape.
In conventional metallographic experiment, sample needs through inlaying, mechanical lapping/polishing, corrosion treatment etc., such as Hardmetal materials, the column that diameter is 25mm or 30mm is generally with the sample after inlaying containing carbonaceous conductive resin metallographic, size is comparatively large, sample gravity is higher, in EBSD experimental analysis, usually there is image drift, cause experimental data to have larger deviation.Chinese patent CN201120465500.4 discloses a kind of scanning electron microscope EBSD sample stage, is screwed sample, can clamping sample effectively, but is only applicable to the sample of small size, regular shape, can not be effectively fixing for circular inlaying samples; Chinese patent CN200920209791.3 discloses a kind of scanning electron microscope EBSD female type pre-tilt sample stage, by spring clip and two baffle plate fixed samples, is not suitable for inlaying samples; Chinese patent CN201020239978.0 discloses a kind of Multi-functional scanning electron microscopic sample platform, inclination sample table top for EBSD passes through fixture fixed sample, but this sample stage overall dimensions is larger, and the mode not having clear and definite sample clamping, consider the geometric position between Electronic Speculum cavity space and each probe, this design is not suitable for the larger inlaying samples of sample size; Chinese patent CN201420542286 discloses a kind of sample platform of scanning electronic microscope, comprises a pair pre-tilt groove 20 °-40 °, is mainly used in the observation of sample on the broken edge multi-angle, is not suitable for the EBSD experiment of pre-tilt 70 °.
Utility model content
The technical problems to be solved in the utility model overcomes the deficiencies in the prior art, provides the scanning electron microscope electron back scattering diffraction sample sample stage that a kind of structure is simple, test sample registration, scan image are stable.
For solving the problems of the technologies described above, the utility model by the following technical solutions:
A kind of scanning electron microscope electron back scattering diffraction sample sample stage, comprise base, described base comprises three-dimensional portion and is just standing on the trapezoidal portion in described three-dimensional portion, the base angle in described trapezoidal portion is 65 °-70.5 °, a wherein inclined side in described trapezoidal portion is provided with the cylindrical recesses can held and inlay sample, fixedly sample is inlayed by securing member, another inclined side is provided with the rectangular recess that can hold and not inlay sample, do not inlay sample by compressing member is fixing, described cylindrical recesses and rectangular recess are respectively perpendicular to the inclined side at respective place.
Further improvement as technique scheme:
The base angle in described trapezoidal portion is 70 °, and deviation is within 0.5 °.
Be provided with pressing plate in described rectangular recess, the sidewall of described pressing plate Parallel Rectangular groove, is fixed by two described housing screws, and a wherein vertical plane in described trapezoidal portion is provided with two housing screw holes.
Described securing member is trip bolt, and the vertical plane at place, described housing screw hole is provided with fastening screw nail.
The length 45 mm-55mm of described base, width 45 mm-55mm, height 38 mm-45mm.
The diameter 25.5mm-30.5mm of described cylindrical recesses, degree of depth 8mm-12mm.
The length 20 mm-30mm of described rectangular recess, width 20 mm-30mm, degree of depth 10mm-15mm.
Compared with prior art, the utility model has the advantage of:
(1) scanning electron microscope electron back scattering diffraction sample sample stage of the present utility model, the base angle scope in the trapezoidal portion of base is 65 ° to 70.5 °, two inclined sides are respectively arranged with cylindrical recesses and the rectangular recess of vertical inclined side separately, arbitrarily angled within the scope of 65-70.5 ° of such test sample pre-tilt, not only strengthen backscatter signal but also accurately can locate test sample, without the need to manual inclination, during operation Electronic Speculum rocking bar, greatly reduce the risk of colliding between sample and electron beam pole shoe and other signal probes; When carrying out EBSD test analysis, first can testing the sample of side, by rotating after completing, the sample of opposite side being tested, simple to operation.
(2) scanning electron microscope electron back scattering diffraction sample sample stage of the present utility model, cylindrical recesses be applicable to gravity larger inlay sample, rectangular recess is applicable to small size and does not inlay sample, securing member, compressing member or pressing plate is adopted to fix sample, replace conducting resinl bonding mode, greatly weaken sample gravity to the drift of image, effectively stablize scan image.
(3) scanning electron microscope electron back scattering diffraction sample sample stage of the present utility model, can be embedded in an inlaying samples for multiple small size sample, mark sequence number, put into the cylindrical recesses of above-mentioned sample stage, trace mobile Electronic Speculum control lever when being tested by EBSD, test several sample successively, remove the work of repeatedly varying, vacuumizing from, and collide without the need to worry and electron beam pole shoe and each signal probe.
Accompanying drawing explanation
Fig. 1 is scanning electron microscope electron back scattering diffraction sample sample stage structural representation of the present utility model.
In figure, each label represents:
1, base; 11, three-dimensional portion; 12, trapezoidal portion; 121, housing screw hole; 122, fastening screw nail; 2, cylindrical recesses; 3, securing member; 4, rectangular recess; 5, pressing plate; 6, compressing member.
Embodiment
Below in conjunction with Figure of description and specific embodiment, the utility model is described in further detail.
Fig. 1 shows a kind of embodiment of the utility model scanning electron microscope electron back scattering diffraction sample sample stage, this scanning electron microscope electron back scattering diffraction sample sample stage comprises base 1, the trapezoidal portion 12 that base 1 comprises three-dimensional portion 11 and just standing in three-dimensional portion 11, the base angle scope in trapezoidal portion 12 65 °-70.5 °, a wherein inclined side in trapezoidal portion 12 is provided with the cylindrical recesses 2 can held and inlay sample, fixedly sample is inlayed by securing member 3, another inclined side is provided with the rectangular recess 4 that can hold and not inlay sample, sample is not inlayed by compressing member 6 is fixing, rectangular recess 4 and cylindrical recesses 2 are respectively perpendicular to the inclined side at respective place, in the present embodiment, angle is 70 °, deviation controls within 0.5 °, ensure that 70 °, sample testing surface tilts to strengthen backscatter signal.Before experiment, inlay sample put into cylindrical recesses 2 by mating with cylindrical recesses 2 size or being slightly less than with the round shape of cylindrical recesses 2 size, and fixed by securing member 3, securing member 3 is screw or bolt etc.; Meanwhile, placing the sample without the need to inlaying at rectangular recess 4, being compressed by the side of compressing member 6 from rectangular recess 4 to sample, compressing member 6 is screw or bolt etc.This sample stage is put into scanning electron microscope after having good positioning by sample, carries out EBSD test analysis, during analysis, first tests the sample of side, by rotating after completing, tests the sample of opposite side.
In the present embodiment, compressing member 6 is two housing screws, pressing plate 5 is provided with in rectangular recess 4, the sidewall of pressing plate 5 Parallel Rectangular groove 4, fixed by two above-mentioned housing screws, a wherein vertical plane in trapezoidal portion 12 is provided with two housing screw holes 121, in rectangular recess 4 placement do not inlay sample time, the sample do not inlayed is pressed on a sidewall of rectangular recess 4 by pressing plate 5, fixing sample is not inlayed by the housing screw clamping platen 5 in the housing screw hole 121 on another side, by arranging pressing plate 5 enlarge active surface, compress more reliable; Securing member 3 is trip bolt, and the vertical plane at place, housing screw hole 121 is provided with fastening screw nail 122, trip bolt is put into fastening screw nail 122 and fixedly inlays sample from the side.
The length of base 1 is 45 mm-55mm, and width is 45 mm-55mm, is highly 38 mm-45mm; The diameter of cylindrical recesses 2 is 25.5mm-30.5mm, and the degree of depth is 8mm-12mm; The length 20 mm-30mm of rectangular recess 4, width is 20 mm-30mm, and the degree of depth is 10mm-15mm; In the present embodiment, the length of base 1 is 45 mm, and width is 45 mm, is highly 38mm; The diameter of cylindrical recesses 2 is 25.5mm, and the degree of depth is 10mm; Inlay specimen size be diameter 25mm, height 12 mm(12 mm-18mm) cylinder table; Rectangular recess 4 length is 20 mm, and width is 20 mm, and the degree of depth is 10mm, and the length, width and height of sample are respectively 5mm, 5mm, 8mm.Rectangular recess 4 is applicable to small size and does not inlay sample, cylindrical recesses 2 be applicable to gravity larger inlay sample, compressing member 6, pressing plate 5 and securing member 3 is adopted to fix sample, replace conducting resinl bonding side and replace conducting resinl bonding mode, greatly weaken sample gravity to the drift of image, effectively stablize scan image.
In the present embodiment, can be embedded in an inlaying samples for multiple small size sample, mark sequence number, put into the cylindrical recesses 2 of above-mentioned sample stage, trace mobile Electronic Speculum control lever when being tested by EBSD, test several sample successively, remove the work of repeatedly varying, vacuumizing from, and collide without the need to worry and electron beam pole shoe and each signal probe.
Although the utility model discloses as above with preferred embodiment, but and be not used to limit the utility model.Any those of ordinary skill in the art, when not departing from technical solutions of the utility model scope, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solutions of the utility model, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solutions of the utility model, according to the utility model technical spirit to any simple modification made for any of the above embodiments, equivalent variations and modification, all should drop in the scope of technical solutions of the utility model protection.

Claims (7)

1. a scanning electron microscope electron back scattering diffraction sample sample stage, comprise base (1), it is characterized in that: described base (1) comprises three-dimensional portion (11) and just standing on the trapezoidal portion (12) on described three-dimensional portion (11), the base angle of described trapezoidal portion (12) is 65 °-70.5 °, a wherein inclined side of described trapezoidal portion (12) is provided with the cylindrical recesses (2) can held and inlay sample, fixedly sample is inlayed by securing member (3), another inclined side is provided with the rectangular recess (4) that can hold and not inlay sample, sample is not inlayed by compressing member (6) is fixing, described cylindrical recesses (2) and rectangular recess (4) are respectively perpendicular to the inclined side at respective place.
2. scanning electron microscope electron back scattering diffraction sample sample stage according to claim 1, is characterized in that: the base angle of described trapezoidal portion (12) is 70 °, and deviation is within 0.5 °.
3. scanning electron microscope electron back scattering diffraction sample sample stage according to claim 2, it is characterized in that: described compressing member (6) is two housing screws, pressing plate (5) is provided with in described rectangular recess (4), the sidewall of described pressing plate (5) Parallel Rectangular groove (4), fixed by two described housing screws, a wherein vertical plane of described trapezoidal portion (12) is provided with two housing screw holes (121).
4. scanning electron microscope electron back scattering diffraction sample sample stage according to claim 3, is characterized in that: described securing member (3) is trip bolt, and the vertical plane at described housing screw hole (121) place is provided with fastening screw nail (122).
5. scanning electron microscope electron back scattering diffraction sample sample stage according to any one of claim 1 to 3, is characterized in that: the length 45 mm-55mm of described base (1), width 45 mm-55mm, height 38 mm-45mm.
6. scanning electron microscope electron back scattering diffraction sample sample stage according to any one of claim 1 to 3, is characterized in that: the diameter 25.5mm-30.5mm of described cylindrical recesses (2), degree of depth 8mm-12mm.
7. scanning electron microscope electron back scattering diffraction sample sample stage according to any one of claim 1 to 3, is characterized in that: the length 20 mm-30mm of described rectangular recess (4), width 20 mm-30mm, degree of depth 10mm-15mm.
CN201520283542.4U 2015-05-05 2015-05-05 Scanning electron microscope electron back scattering diffraction sample sample stage Active CN204575570U (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105651798A (en) * 2015-12-30 2016-06-08 哈尔滨工业大学 Sample clamp for t-EBSD (electron backscattered diffraction) test
CN105699408A (en) * 2016-04-15 2016-06-22 南京大学 Sample stage for electron backscatter diffraction instruments
CN105810543A (en) * 2016-05-07 2016-07-27 南京理工大学 Transmission electron microscope sample table for observing three-dimensional atom probe test sample
CN109342475A (en) * 2018-11-22 2019-02-15 上海华力集成电路制造有限公司 FIB specimen holder
CN111521627A (en) * 2020-04-30 2020-08-11 中国航发成都发动机有限公司 EBSD test sample platform
CN113390907A (en) * 2021-06-17 2021-09-14 西北工业大学 Sample stage for electron back scattering diffraction

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105651798A (en) * 2015-12-30 2016-06-08 哈尔滨工业大学 Sample clamp for t-EBSD (electron backscattered diffraction) test
CN105651798B (en) * 2015-12-30 2019-03-12 哈尔滨工业大学 A kind of sample clamp for t-EBSD test
CN105699408A (en) * 2016-04-15 2016-06-22 南京大学 Sample stage for electron backscatter diffraction instruments
CN105699408B (en) * 2016-04-15 2019-03-29 南京大学 A kind of sample stage for electron backscatter diffraction instrument
CN105810543A (en) * 2016-05-07 2016-07-27 南京理工大学 Transmission electron microscope sample table for observing three-dimensional atom probe test sample
CN109342475A (en) * 2018-11-22 2019-02-15 上海华力集成电路制造有限公司 FIB specimen holder
CN111521627A (en) * 2020-04-30 2020-08-11 中国航发成都发动机有限公司 EBSD test sample platform
CN113390907A (en) * 2021-06-17 2021-09-14 西北工业大学 Sample stage for electron back scattering diffraction

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