CN105632549B - Sram存储单元及提高其读写稳定性的电路 - Google Patents
Sram存储单元及提高其读写稳定性的电路 Download PDFInfo
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- CN105632549B CN105632549B CN201410606630.3A CN201410606630A CN105632549B CN 105632549 B CN105632549 B CN 105632549B CN 201410606630 A CN201410606630 A CN 201410606630A CN 105632549 B CN105632549 B CN 105632549B
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CN106205677B (zh) * | 2016-07-13 | 2019-08-30 | 武汉新芯集成电路制造有限公司 | 一种防止sram存储单元的下拉电流降低的电路 |
CN106448725B (zh) * | 2016-09-21 | 2018-11-30 | 宁波大学 | 一种基于FinFET器件的读写分离存储单元 |
CN109684665B (zh) * | 2018-11-21 | 2024-02-02 | 浙江大学城市学院 | 基于FinFET的三值SRAM单元电路及控制方法 |
Citations (2)
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CN1890798A (zh) * | 2003-10-02 | 2007-01-03 | 英特尔公司 | 用于改善6t cmos sram单元稳定性的方法和装置 |
CN103201797A (zh) * | 2010-11-04 | 2013-07-10 | 高通股份有限公司 | 使用独立栅极鳍式场效应晶体管的稳定静态随机存取存储器位单元设计 |
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CN1890798A (zh) * | 2003-10-02 | 2007-01-03 | 英特尔公司 | 用于改善6t cmos sram单元稳定性的方法和装置 |
CN103201797A (zh) * | 2010-11-04 | 2013-07-10 | 高通股份有限公司 | 使用独立栅极鳍式场效应晶体管的稳定静态随机存取存储器位单元设计 |
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Application publication date: 20160601 Assignee: SPREADTRUM COMMUNICATIONS (SHANGHAI) Co.,Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co.,Ltd. Contract record no.: X2021110000055 Denomination of invention: SRAM memory cell and circuit for improving its read-write stability Granted publication date: 20190122 License type: Exclusive License Record date: 20211227 |
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