CN105612603B - 非晶硅膜的蒸镀方法及蒸镀装置 - Google Patents

非晶硅膜的蒸镀方法及蒸镀装置 Download PDF

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CN105612603B
CN105612603B CN201480052521.XA CN201480052521A CN105612603B CN 105612603 B CN105612603 B CN 105612603B CN 201480052521 A CN201480052521 A CN 201480052521A CN 105612603 B CN105612603 B CN 105612603B
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amorphous silicon
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申承祐
金海元
郑愚德
赵星吉
吴完锡
崔豪珉
李郡禹
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Eugene Technology Co Ltd
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Abstract

根据本发明的一实施例的非晶硅膜的蒸镀方法，在腔内部装载基板的状态下，在上述基板上供给源气体和气氛气体，在工序压力下的工序温度，在上述基板上蒸镀非晶硅膜，其中，上述源气体是硅烷(SiH2)、乙硅烷(Si2H6)、二氯甲硅烷(SiCl2H2)中的一种以上，其中，上述工序温度被调节为540℃～570℃的范围，且上述工序压力被调节为1～300Torr的范围，从而上述源气体热分解而在上述基板上蒸镀上述非晶硅膜，其中，上述气氛气体是氢和氦中的一种以上，上述源气体的流量是0.5～300sccm，上述气氛气体的流量是100～25000sccm，上述非晶硅膜被蒸镀的厚度为

Description

非晶硅膜的蒸镀方法及蒸镀装置
技术领域
本发明涉及蒸镀非晶硅膜的方法及装置，更详细地涉及利用气氛气体蒸镀非晶硅膜的方法及装置。
背景技术
非晶硅用于半导体集成电路装置的接触孔或线路的埋入，最近随着半导体集成电路装置的微细化，接触孔或线路的埋入标准越来越严格。
用非晶硅埋入微细化的接触孔或线路的情况下，非晶硅有可能在接触孔部分覆盖差，或可能产生大的空隙。例如，若在接触孔或线路内产生大的空隙，则可能成为增加电阻值的原因之一。另外，还可能成为表面粗糙度的精细度差的原因。
发明内容
技术课题
本发明的目的在于，提供一种可以改善表面粗糙度的精细度的非晶硅膜的蒸镀方法及蒸镀装置。
本发明的另一目的在于，提供一种可以对应接触孔或线路等的微细化的非晶硅膜的蒸镀方法及蒸镀装置。
本发明的其它目的根据下面的详细说明和附图会更加清楚。
课题解决方案
根据本发明的一实施例，非晶硅膜的蒸镀方法，其特征在于，
在腔内部装载基板的状态下，在上述基板上供给源气体和气氛气体，
在工序压力下的工序温度，在上述基板上蒸镀非晶硅膜，
其中，上述源气体是硅烷(SiH2)、乙硅烷(Si2H6)、二氯甲硅烷(SiCl2H2)中的一种以上，
其中，上述工序温度被调节为540℃～570℃的范围，且上述工序压力被调节为1～300Torr的范围，从而上述源气体热分解而在上述基板上蒸镀上述非晶硅膜，
其中，上述气氛气体是氢和氦中的一种以上，
上述源气体的流量是0.5～300sccm，上述气氛气体的流量是100～25000sccm，上述非晶硅膜被蒸镀的厚度为
上述非晶硅膜的蒸镀方法,其中，上述非晶硅膜被蒸镀为具有1nm以下的表面粗糙度。
上述非晶硅膜的蒸镀方法,其中，上述基板位于加热器上，且上述基板被上述加热器加热至上述工序温度。
上述非晶硅膜的蒸镀方法,其中，上述基板位于加热器上，且上述源气体被上述加热器分解。
根据本发明的一实施例的非晶硅膜的蒸镀装置,包括：
用于提供内部空间，以便在工序压力下的工序温度在上述内部空间对基板实施工序；
真空接口，上述内部空间的未反应气体及反应副产物通过该真空接口排放；以及
加热器，设在上述腔内来支承上述基板并加热上述基板；第1供给线路及第2供给线路，被连接在上述腔的一侧所形成的导入部，通过上述导入部向上述腔内部分别供给源气体及气氛气体，
上述源气体是硅烷(SiH2)、乙硅烷(Si2H6)、二氯甲硅烷(SiCl2H2)中的一种以上；
排放线路，与上述真空接口连接；
真空泵，用于强制排放上述内部空间的未反应气体及反应副产物；
控制部，用于控制上述加热器将上述工序温度调节为540℃～580℃的范围，且在上述内部空间进一步控制上述真空泵将上述工序压力调节为8～300Torr的范围，从而上述源气体热分解而在上述基板上蒸镀厚度的上述非晶硅膜；以及
在第一供给线路和第二供给线路上设置的第一流量控制器和第二流量控制器，分别用于调节上述源气体及上述气氛气体的供给流量，
其中，上述气氛气体是氢和氦中的某一种以上，
上述非晶硅膜的蒸镀装置,其中，上述第一流量控制器调节上述源气体的供给流量为0.5sccm～300sccm范围，并且，上述第二流量控制器调节上述气氛气体的供给流量为100sccm～25000sccm范围。
发明效果
根据本发明的一实施例，可以进一步改善表面粗糙度的精细度。另外，可以应对接触孔或线路等的微细化。
附图说明
图1是简要地表示根据本发明的一实施例的非晶硅膜的蒸镀装置的图。
图2是表示将氮气作为气氛气体的非晶硅膜的蒸镀结果的图表。
图3是表示将氦气作为气氛气体的非晶硅膜的蒸镀结果的图表。
图4是表示按蒸镀温度比较以氮气和氦气作为气氛气体的非晶硅膜的蒸镀率的图表。
图5是表示基于气氛气体的表面粗糙度的图表。
具体实施方式
下面，参照所附的图1至图5更详细地说明本发明的优选实施例。本发明的实施例可以变形为多种方式，不可解释为本发明的权利要求范围限于下面说明的实施例。本实施例是为了向本发明所属技术领域的普通技术人员更详细地说明本发明而提供的。因此，为了强调更清楚的说明，附图中出现的各因素的形状有可能被夸张。
另一方面，在下面非晶硅不单是表示非晶硅的用语，包括非晶硅、可达到下面所述的表面粗糙度的精细度的非晶体即聚集纳米尺寸的结晶粒的纳米结晶硅、及上述非晶硅和上述纳米结晶硅混在一起的所有硅。
图1是简要地表示根据本发明的一实施例的非晶硅膜的蒸镀装置的图。一般，化学气相蒸镀是供给气体状态的源气体来诱导与基板之间的化学反应，从而在半导体基板上形成薄膜的工序。
如图1所示，腔11提供与外部切断的内部空间，在腔11的上部形成用于向内部空间导入源气体的导入部12。在导入部12连接主供给线路12a和与主供给线路12a连接的第1供给线路18a及第2供给线路19a。第1供给线路18a向腔11的内部供给源气体，第2供给线路18b向腔11的内部供给气氛气体。源气体可以是包括硅烷(SiH2)，乙硅烷(Si2H6)，二氯甲硅烷(SiCl2H2，DCS)的硅烷类气体，气氛气体是氢和氦中的一种以上。源气体被储存在与第1供给线路18a连接的第1储存罐18d，气氛气体被储存在与第2供给线路19a连接的第2储存罐19d中。
另外，在第1供给线路18a上设有第1流量控制器18b及第1阀门18c，在第2供给线路19a上设有第2流量控制器19b及第2阀门19c。另一方面，由导入部12流入的气体通过设置于腔11内部的喷头13喷射到腔11内部。
另外，作为蒸镀的对象的晶片15被放置在加热器14上，加热器14在被加热器支承座16支承的状态下加热晶片15而形成工序温度。当完成蒸镀时，腔11内部的未反应气体及反应副产物通过真空接口17排放。在真空接口17连接排放线路17a及真空泵17b，强制排放腔11内部的未反应气体及反应副产物。除此之外，可以利用排放线路17a及真空泵17b调节腔11内部的工序压力。
通过这样的方法，在晶片15上将源气体及气氛气体供给到腔11内部，通过由加热器14的热分解而分解的源气体，在晶片15上蒸镀非晶硅膜。另一方面，用于调节工序温度的加热器14及用于调节工序压力的真空泵17b、以及用于调节源气体及气氛气体的供给流量的第1及第2流量控制器18b、19b通过控制部20控制。控制部20将腔11内部的工序温度调节到200～800℃，将腔11内部的工序压力调节为1～300Torr。另外，控制部20，将源气体的流量调节为0.5～300sccm，将气氛气体的供给流量调节为100～25000sccm。
如上所述，晶片15被装载到腔11内部，然后几乎同时供给源气体和气氛气体而在晶片15上蒸镀非晶硅膜。源气体可以是包括硅烷(SiH2)，乙硅烷(Si2H6)，二氯甲硅烷(SiCl2H2，DCS)的硅烷类气体。另外，晶片15在上部表面形成有种子层的状态下装载到腔11内部，非晶硅膜可以形成在种子层上。
图2是表示将氮气作为气氛气体的非晶硅膜的蒸镀结果的图表，表示在530℃及540℃蒸镀厚度的情况、在550℃及570℃蒸镀厚度的情况下各非晶硅膜的表面粗糙度(工序压力＝2Torr，源气体为乙硅烷(Si2H6))。图3是表示将氦作为气氛气体的非晶硅膜的蒸镀结果的图表，表示在530℃及540℃蒸镀厚度的情况、在550℃及570℃蒸镀厚度的情况下各非晶硅膜的表面粗糙度。
观察图2，将氮气作为气氛气体的情况下，可知非晶硅膜的厚度为时为1nm以下，但是非晶硅膜的厚度为时为2nm以上。即，可知随着非晶硅膜的厚度增加，表面粗糙度急剧增加。相反，若观察图3，将氦气作为气氛气体的情况下，可知非晶硅膜的厚度为时为1nm以下，非晶硅膜的厚度为时也是1nm以下。即，尽管非晶硅膜的厚度增加，但是表面粗糙度可以维持在同等的水平。
一般，批量式(batch type)蒸镀装置与图1所示的单片式(single type)蒸镀装置相比显示出改善的表面粗糙度，表面粗糙度随着薄膜的厚度增加而增加。但是，如图3所示，将氦气作为气氛气体的情况下，非晶硅膜的表面粗糙度与薄膜的厚度无关地显示出同等的水平。特别是在非晶硅膜的厚度为时，表面粗糙度表现出与批量式蒸镀装置同等水准的表面粗糙度。
图4是表示以氮气和氦气作为气氛气体的非晶硅膜的蒸镀率按蒸镀温度比较的图表。观察图4，蒸镀温度为530℃时，蒸镀率分别为11.07(气氛气体＝氮气)和11.19(气氛气体＝氦)，并没有大的差异。但是，可知随着蒸镀温度增加，蒸镀率的差异增加，蒸镀温度为570℃时，蒸镀率分别为26.48(气氛气体＝氮气)和35.51(气氛气体＝氦)，具有30％以上的差异。
结论上，以氦气作为气氛气体时，薄膜的厚度增加(例如，)时，可以防止表面粗糙度增加，利用单片式蒸镀装置，可以确保与批量式蒸镀装置同等水平的表面粗糙度。特别是，在高温下(例如，540℃以上)可以大幅改善蒸镀率。
图5是表示基于气氛气体的表面粗糙度的图表。将气氛气体作为氮、氩、氦、氢，将源气体作为乙硅烷(Si2H6)，在与下表1相同的条件下蒸镀了非晶硅膜。
表1
其结果，如前所述，氦不仅与氮相比显示出改善的表面粗糙度，而且与氩相比也显示出改善的表面粗糙度。即，氮及氩显示出超过0.3表面粗糙度，但是氦显示出小于0.3(nm)的表面粗糙度，可知能够将表面粗糙度改善15％以上。另外，氢显示出比氦改善的表面粗糙度，在蒸镀率方面也显示出高于氦的数值(0.76)。
如上所述，例如非晶硅膜对于形成在包括硅氧化膜或硅氮化膜的层间绝缘膜中的接触孔的埋入或形成在层间绝缘膜中的线路，例如内部布线用的槽的埋入有用。特别是，非晶硅膜的表面粗糙度大的情况下，有可能在埋入接触孔时产生大的空隙，相反在非晶硅膜的表面粗糙度小的情况下空隙变小，从而可以抑制被埋入接触孔内部的非晶硅膜的电阻值的增大。
通过优选的实施例详细说明了本发明，但是也可以有与此不同方式的实施例。因此，下面所记载的权利要求的技术思想和范围不限于优选的实施例。
工业实用性
本发明可以应用于多种方式的半导体制造设备及制造方法。

Claims (5)

1.一种非晶硅膜的蒸镀方法，其特征在于，
在腔内部装载基板的状态下，在上述基板上供给源气体和气氛气体，
在工序压力下的工序温度，在上述基板上蒸镀非晶硅膜，
其中，上述源气体是硅烷(SiH2)、乙硅烷(Si2H6)、二氯甲硅烷(SiCl2H2)中的一种以上，
其中，上述工序温度被调节为540℃～570℃的范围，且上述工序压力被调节为1～300Torr的范围，从而上述源气体热分解而在上述基板上蒸镀上述非晶硅膜，
其中，上述气氛气体是氢和氦中的一种以上，
上述源气体的流量是0.5～300sccm，
上述气氛气体的流量是100～25000sccm，
上述非晶硅膜被蒸镀为厚度。
2.如权利要求1所述的非晶硅膜的蒸镀方法，其特征在于，
其中，上述非晶硅膜被蒸镀为具有1nm以下的表面粗糙度。
3.如权利要求1所述的非晶硅膜的蒸镀方法，其特征在于，
其中，上述基板位于加热器上，且上述基板被上述加热器加热至上述工序温度。
4.如权利要求1所述的非晶硅膜的蒸镀方法，其特征在于，
其中，上述基板位于加热器上，且上述源气体被上述加热器分解。
5.一种非晶硅膜的蒸镀装置，其特征在于，包括：
腔，用于提供内部空间，以便在工序压力下的工序温度在上述内部空间对基板实施工序；
真空接口，上述内部空间的未反应气体及反应副产物通过该真空接口排放；以及
加热器，设在上述腔内来支承上述基板并加热上述基板；
第1供给线路及第2供给线路，被连接在上述腔的一侧所形成的导入部，通过上述导入部向上述腔内部分别供给源气体及气氛气体；及
第1储存罐及第2储存罐，分别连接在上述第1供给线路及第2供给线路而存储有上述源气体及上述气氛气体，上述源气体是硅烷(SiH2)、乙硅烷(Si2H6)、二氯甲硅烷(SiCl2H2)中的一种以上；
排放线路，与上述真空接口连接；
真空泵，用于强制排放上述内部空间的未反应气体及反应副产物；
控制部，用于控制上述加热器将上述工序温度调节为540℃～570℃的范围，且在上述内部空间进一步控制上述真空泵将上述工序压力调节为1～300Torr的范围，从而上述源气体热分解而在上述基板上蒸镀厚度的上述非晶硅膜；以及
在第一供给线路和第二供给线路上设置的第一流量控制器和第二流量控制器，分别用于调节上述源气体及上述气氛气体的供给流量，
其中，上述气氛气体是氢和氦中的某一种以上，
其中，上述第一流量控制器调节上述源气体的供给流量为0.5sccm～300sccm范围，并且，上述第二流量控制器调节上述气氛气体的供给流量为100sccm～25000sccm范围。
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