CN105609460B - 基板安放单元 - Google Patents
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Abstract
本发明涉及一种基板安放单元,其能够恒定地保持借助于夹钳而固定的卡盘与托盘间的间隔,本发明一个实施例的基板安放单元的特征在于,包括:卡盘,其设置于基板处理装置的腔内部;托盘,其供基板安放,设置于所述卡盘平面;及夹钳,其对所述卡盘与托盘的边缘加压并固定;在所述托盘的底面中心或所述卡盘的平面中心凸出形成有凸出部。
Description
技术领域
本发明涉及安装于基板处理装置的基板安放单元,更详细而言,涉及一种能够恒定地保持借助于夹钳而固定的卡盘与托盘间的间隔的基板安放单元。
背景技术
一般而言,在用于半导体的基板及要求精密的薄膜加工工序中,使用利用等离子体的蚀刻和蒸镀法,提高生产制品的精密度。
如上所述,产生等离子体的等离子体处理装置由形成外形的腔和设置于腔的外侧上部的天线及使基板放置于腔内部的卡盘构成,借助于由天线供应的高频,在腔内部形成等离子体,对放置于卡盘的基板进行加工。
但是,这种等离子体加工装置把一个基板放置于卡盘进行加工,因而在加工多个基板时,作业时间需要较长,存在生产率降低的问题。
因此,最近为了能够同时加工多个基板,开发了一种技术,在卡盘上部利用夹钳固定供多个基板安放的圆盘状的托盘,同时加工多个基板,从而提高生产率。
图1是用于说明以往托盘的变形及由此导致的温度偏差的图。
如图1所示,当利用夹钳300而固定托盘200与卡盘100时,力集中于供夹钳300安装的托盘200的外周面,因而在托盘200中发生诸如弯曲的变形,发生托盘200与卡盘100间的间隔越靠近托盘200的中心越变宽的现象。
如上所述,如果在托盘200中发生变形,托盘200与卡盘100之间间隔变宽,则随着热传递效率下降,在托盘200的中央部温度(T1)与边缘部温度(T2)发生偏差。在中央部由等离子体导致托盘表面温度上升。
如上所述,当在托盘200的中央部与边缘部发生温度偏差时,安放于托盘200的基板W根据其安放位置,加工速度相互不同,从而诱发生产的制品的品质偏差及缺陷。
特别是当卡盘100发挥加热器作用时,存在与卡盘100间隔狭窄的基板W的边缘部温度上升到需要以上而使基板W损伤的问题。
以往,为了解决这种问题,针对供托盘安放的卡盘的上面以向上部凸起的曲面形成的装置,在“等离子体处理方法及等离子体处理用托盘(韩国公开专利KR 2003-0021908)”等中具体公开。
但是,当以凸出的曲面形成卡盘的上面时,存在如下问题:托盘的变形程度进一步加大,基板无法在托盘上部稳定地安放,从而诱发生产制品不良。
另外,安放于托盘弯曲的边缘部的基板,由于左右倾斜度不同,因此存在生产制品的加工程度非对称地加工的问题。
另一方面,针对使用托盘底面向下方凸出地形成的托盘,在“冷却效果优秀的等离子体处理装置用基板托盘及等离子体处理装置(韩国公开专利KR2012-0097667)”等中具体公开。
但是,为了解决由于托盘的厚度、强度及宽度的影响而导致托盘与卡盘之间间隔加宽的问题,需要形成粘合片、浮雕等追加构成,存在使托盘制造成本上升的问题,由此,热传递气体无法顺利供应至托盘,无法解决诱发生产制品的品质缺陷的问题。
现有技术文献
专利文献
专利文献1:KR 2003-0021908A(2003.10.17.)
专利文献2:KR 2012-0097667A(2012.09.05.)
发明内容
要解决的课题
本发明正是为了解决如上问题而研发的,提供一种能够同时安放多个基板并处理,且使各个基板间的温度偏差最小化的基板安放单元。
另外,提供一种在利用夹钳固定托盘与卡盘时,能够使托盘的变形最小化的基板安放单元。
解决课题方法
本发明一个实施例的基板安放单元的特征在于,包括:卡盘,其设置于基板处理装置的腔内部;托盘,其供基板安放,设置于所述卡盘平面;及夹钳,其对所述卡盘与托盘的边缘加压并固定;在所述托盘的底面中心或所述卡盘的平面中心凸出形成有凸出部。
其特征在于,所述凸出部与所述托盘形成为一体,在其中心形成有沿上下方向通孔的气体流路,在其底面形成有以所述气体流路为中心呈放射状形成的一个以上的气体流动槽。
其特征在于,所述凸出部与所述卡盘形成为一体,在其平面形成有呈放射状形成的一个以上的气体流动槽。
优选所述凸出部以圆板形状形成,其直径形成为所述托盘直径的1/2以下。
优选地,本发明一个实施例的基板安放单元还可以包括圆板形状的托盘盖,其具有多个基板处理孔,并盖住所述托盘上部。
优选所述托盘盖形成有变形防止部,所述变形防止部沿其外周面向下方延长,与所述卡盘的平面接触,以便能够防止所述托盘边缘部的变形。
发明效果
根据本发明的实施例,当使多个基板同时安放于托盘并处理时,使因托盘与卡盘之间间隔变化而发生的基板间的温度偏差最小化,从而具有能够提高生产率并提高生产基板的品质的效果。
另外,具有能够使托盘的变形最小化,使基板间的温度偏差最小化,提高托盘寿命的效果。
另外,在凸出部中形成气体流路及气体流动槽,以使热传递气体顺利供应至托盘,从而具有防止基板间的温度偏差,使不良的发生实现最小化的效果。
附图说明
图1是用于说明以往托盘的变形及由此导致的温度偏差的图,
图2是显示本发明一个实施例的托盘的底面的立体图,
图3是显示本发明另一个实施例的卡盘的平面的图,
图4是用于说明本发明第一实施例的基板安放单元的剖面图,
图5是用于说明本发明第二实施例的基板安放单元的剖面图,
图6是用于说明本发明第三实施例的基板安放单元的剖面图,
图7是用于说明本发明第四实施例的基板安放单元的剖面图,
图8是用于说明本发明第五实施例的基板安放单元的剖面图,
图9是用于说明本发明第六实施例的基板安放单元的剖面图,
图10是用于说明利用本发明一个实施例的基板安放单元处理基板时的温度偏差的图,
图11是显示利用以往基板安放单元和本发明一个实施例的基板安放单元处理基板时,分别安放于托盘中心部与边缘区域的基板的处理状态的照片。
[符号说明]
W:基板 100:卡盘
110:第一气体流动孔 200:托盘
210:基板安放部 230:第二气体流动孔
300:夹钳 400:凸出部
410:气体流路 420:气体流动槽
500:托盘盖 510:变形防止部
530:基板处理孔
具体实施方式
下面参照附图,详细说明本发明的优选实施例,但本发明并非由实施例限制或限定。作为参考,在本说明中,相同的符号指称实质上相同的要素,在这种规则下,可以引用在其它附图中记载的内容进行说明,可以省略判断为对于所属技术领域的技术人员来说显而易见的或者重复的内容。
本发明一个实施例的基板安放单元包括:卡盘100,其设置于基板处理装置的腔内部;托盘200,其安放于卡盘100上部,在其平面上供多个基板W安放;及夹钳300,其使托盘200与卡盘100结合固定。
其特征在于,当利用夹钳300对卡盘100与托盘200的边缘部加压并固定时,托盘200的中心发生向上方凸起的变形,因而导致在中心部,托盘200与卡盘100之间间隔增加,在托盘200与卡盘100的中心部凸出形成有对此进行补偿的凸出部400,使多个基板W间的温度偏差实现最小化。
此时,在卡盘100内部形成有沿上下方向通孔的多个第一气体流动孔110,以便能够使基板W冷却或升温,托盘200在其底面形成有与第一气体流动孔110连通的多个第二气体流动孔230。
因此,通过第一气体流动孔110、第二气体流动孔230,使热传递气体流动,以使安放基板W的托盘200冷却或加热,热传递气体可以使用氦(He)气等惰性气体。
此时,优选在托盘200的平面中,隔开一定间隔形成有具有与基板W的直径对应直径的多个基板安放部210。因此,可以使多个基板W分别安放于在托盘200平面形成的多个基板安放部210并同时处理。
另一方面,优选凸出部400以圆板形状形成,其直径形成为托盘200直径的1/2以下。
这是因为,在凸出部400的直径超过托盘200直径的1/2的情况下,当利用夹钳300对卡盘100与托盘200的边缘加压并固定时,托盘200边缘部的变形增加,在中心部,托盘200与卡盘100之间间隔增加,发生托盘200中央部与边缘部的温度偏差。
下面参照附图,对本发明优选实施例的基板安放单元进行详细说明。
图2是显示本发明第一实施例的托盘的底面的立体图,图4是用于说明本发明第一实施例的基板安放单元的剖面图。
如图2及图4所示,本发明第一实施例的凸出部400从托盘200底面中心向下方凸出形成。
因此,对利用夹钳300对托盘200与卡盘100的边缘加压并固定时,对在托盘200中发生变形而增加的中央部的夹钳300与卡盘100之间间隔进行补偿,使安放于托盘200平面的多个基板W间的温度偏差最小化。
此时,优选凸出部400在托盘200底面中心形成为一体,在其中心形成有沿上下方向通孔的气体流路410,在底面,以气体流路410为中心呈放射状形成有一个以上的气体流动槽420,以便热传递气体能够流入气体流路410。
这是因为,使得从卡盘100流入的热传递气体顺利地流入托盘200与卡盘100之间间隔宽阔的托盘200中央部,从而能够使与边缘部的温度偏差最小化。
图3是显示本发明另一实施例的卡盘的平面的图,图5是用于说明本发明第二实施例的基板安放单元的剖面图。
如图3及图5所示,优选本发明第二实施例的凸出部400从卡盘100的上部中心向上方凸出形成,其理由是,如在第一实施例中所作的说明,即使因夹钳300而发生托盘200的边缘部弯曲的变形,在中央部,也使得夹钳300与卡盘100之间间隔不加宽,从而使安放在托盘200平面的多个基板W间的温度偏差的发生实现最小化。
此时,优选凸出部400在卡盘100的平面中心形成为一体,在其平面上,呈放射状形成有一个以上的气体流路,以便热传递气体向托盘移动,其理由如前所述。
图6是用于说明本发明第三实施例的基板安放单元的剖面图,图7是用于说明本发明第四实施例的基板安放单元的剖面图。
如图2、图3、图6及图7所示,本发明第三实施例及第四实施例的基板安放单元还可以包括盖住托盘200上部的圆板状的托盘盖500。
在托盘盖500上,与各个基板安放部210对应地形成有多个基板处理孔530,此时,优选基板处理孔530的直径形成为比基板安放部210的直径小。
因此,能够使安放于托盘200的基板固定,防止基板W从基板安放部210脱离。
图8是用于说明本发明第五实施例的基板安放单元的剖面图,图9是用于说明本发明第六实施例的基板安放单元的剖面图。
如图2、图3、图8及图9所示,本发明第五实施例及第六实施例的基板安放单元还包括托盘盖500,所述托盘盖500形成有变形防止部510,所述变形防止部510包围托盘200的外周面并向下方延长,与卡盘100的平面接触。
变形防止部510以环形管形状形成,以便托盘200的外周面邻接其内周面,并向下方延长,使得其底面可以位于与凸出部400的底面相同平面上。
此时,优选变形防止部510的高度以与凸出部400对应的高度形成。
因此,当利用夹钳300固定托盘200与卡盘100时,使施加于托盘200的边缘部的力最小化,防止托盘200的变形,从而具有能够使托盘200与卡盘100之间间隔恒定的效果。
图10是用于说明利用本发明一个实施例的基板安放单元处理基板时的温度偏差的图,图11是显示利用以往基板安放单元和本发明一个实施例的基板安放单元处理基板时,分别安放于托盘中心部与边缘区域的基板的处理状态的照片。
如图10所示可知,根据本发明的实施例,托盘200中心部与边缘部的表面温度几乎保持恒定,从而中心部温度(T1)与边缘部温度(T2)相等,防止基板W根据安放位置而发生温度偏差,从而能够生产品质均一的基板W。
另一方面,如图11所示可知,当把基板固定于以往基板安放单元并对基板进行处理时,安放于托盘200的边缘部的基板W的宽度显示为2.7202μm,高度为1.6415μm,而安放于托盘200的中心部的基板W的宽度显示为2.8073μm,高度显示为1.6683μm,宽度偏差显示为0.0871μm,高度偏差为0.0268μm。
相反,当利用本发明实施例的基板安放单元固定基板W后进行处理时,安放于托盘200的边缘部的基板W的宽度显示为2.7068μm,高度显示为1.6147μm,安放于托盘200中心部的基板W的宽度显示为2.7269μm,高度显示为1.6348μm,宽度偏差及高度偏差均为0.0201μm,可知与以往相比,使宽度偏差减小约77%,高度偏差减小约25%。
上面参照本发明的优选实施例进行了说明,但只要是所属技术领域的技术人员,便会理解:在不超出以下权利要求书中记载的本发明的思想及领域的范围内,可以多样地修改及变更本发明。
Claims (6)
1.一种基板安放单元,其特征在于,包括:
卡盘,其设置于基板处理装置的腔内部;
托盘,其供基板安放,设置于所述卡盘平面;及
夹钳,其对所述卡盘与托盘的边缘加压并固定;
在所述托盘的底面中心或所述卡盘的平面中心凸出形成有凸出部,
在利用所述夹钳对所述托盘与所述卡盘的边缘加压并固定时,所述凸出部对在所述托盘的中心发生变形而在中心部增加的所述托盘与所述卡盘之间的间隔进行补偿。
2.根据权利要求1所述的基板安放单元,其特征在于,
所述凸出部与所述托盘形成为一体,在其中心形成有沿上下方向通孔的气体流路,在其底面形成有以所述气体流路为中心呈放射状形成的一个以上的气体流动槽。
3.根据权利要求1所述的基板安放单元,其特征在于,
所述凸出部与所述卡盘形成为一体,在其平面形成有呈放射状形成的一个以上的气体流动槽。
4.根据权利要求2或3所述的基板安放单元,其特征在于,
所述凸出部以圆板形状形成,其直径形成为所述托盘直径的1/2以下。
5.根据权利要求1所述的基板安放单元,其特征在于,
还包括圆板形状的托盘盖,其具有多个基板处理孔,并盖住所述托盘上部。
6.根据权利要求5所述的基板安放单元,其特征在于,
所述托盘盖形成有变形防止部,所述变形防止部沿其外周面向下方延长,与所述卡盘的平面接触,以便防止所述托盘边缘部的变形。
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