CN105573000B - Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置 - Google Patents

Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置 Download PDF

Info

Publication number
CN105573000B
CN105573000B CN201610177105.3A CN201610177105A CN105573000B CN 105573000 B CN105573000 B CN 105573000B CN 201610177105 A CN201610177105 A CN 201610177105A CN 105573000 B CN105573000 B CN 105573000B
Authority
CN
China
Prior art keywords
tft
grid
signal
layer
display panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610177105.3A
Other languages
English (en)
Other versions
CN105573000A (zh
Inventor
张斌
董殿正
张衎
陈鹏名
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Beijing BOE Display Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201610177105.3A priority Critical patent/CN105573000B/zh
Publication of CN105573000A publication Critical patent/CN105573000A/zh
Priority to PCT/CN2016/088086 priority patent/WO2017161731A1/zh
Priority to US15/531,518 priority patent/US10176782B2/en
Application granted granted Critical
Publication of CN105573000B publication Critical patent/CN105573000B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/10Intensity circuits
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3648Control of matrices with row and column drivers using an active matrix
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • H01L21/02592Microstructure amorphous
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651Silicon transistors
    • H01L29/7866Non-monocrystalline silicon transistors
    • H01L29/78663Amorphous silicon transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/136295Materials; Compositions; Manufacture processes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/06Adjustment of display parameters
    • G09G2320/0626Adjustment of display parameters for control of overall brightness
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/08Arrangements within a display terminal for setting, manually or automatically, display parameters of the display terminal
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/021Power management, e.g. power saving
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/12Test circuits or failure detection circuits included in a display system, as permanent part thereof
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00Aspects of the architecture of display systems
    • G09G2360/14Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/144Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

本发明公开一种TFT及制作方法、阵列基板、显示面板及驱动方法、显示装置,涉及显示技术领域,为解决显示装置整体功耗大的问题。所述TFT包括衬底基板,在衬底基板上依次层叠设有第一栅极、底层栅极介电层和绝缘层,在绝缘层上设有源极和漏极,在源极、漏极和绝缘层上依次层叠设有顶层栅极介电层、第二栅极和钝化层;第一栅极或第二栅极为光敏材料栅极。本发明提供的TFT、显示面板应用于显示装置中。

Description

TFT及制作方法、阵列基板、显示面板及驱动方法、显示装置
技术领域
本发明涉及显示技术领域,尤其涉及一种TFT及制作方法、阵列基板、显示面板及驱动方法、显示装置。
背景技术
目前,显示装置越来越多地被应用于人们的工作、学习和娱乐中,用户在不同的场景下使用显示装置时,不同场景下的显示装置周围的环境光的强度往往不同,为了能够调整显示装置的显示画面的亮度,显示装置中往往需要安装环境光传感器,通过环境光传感器来获取环境光的亮度信息,并将亮度信息提供给显示装置的处理模块,由处理模块来根据获取到的环境光的亮度信息来调节显示装置的显示画面的亮度。
但是,由于显示装置中必须安装环境光传感器,且需要为环境光传感器提供工作电能,使得显示装置整体的功耗较大。
发明内容
本发明的目的在于提供一种TFT及制作方法、阵列基板、显示面板及驱动方法、显示装置,用于减小显示装置整体的功耗。
为了实现上述目的,本发明提供如下技术方案:
第一方面,本发明提供了一种薄膜晶体管TFT,包括衬底基板,在衬底基板上依次层叠设有第一栅极、底层栅极介电层和绝缘层,在所述绝缘层上设有源极和漏极,在所述源极、所述漏极和所述绝缘层上依次层叠设有顶层栅极介电层、第二栅极和钝化层;所述第一栅极或所述第二栅极为光敏材料栅极。
第二方面,本发明提供了一种TFT的制作方法,包括:
在衬底基板上形成第一栅极层,通过构图工艺在所述第一栅极层形成包括第一栅极的图形;
在所述衬底基板和所述第一栅极上依次形成底层栅极介电层和绝缘层;
在所述绝缘层上形成源/漏极层,通过构图工艺在所述源/漏极层形成包括源极和漏极的图形;
在所述绝缘层、所述源极和所述漏极上形成顶层栅极介电层;
在所述顶层栅极介电层上形成第二栅极层,通过构图工艺在所述第二栅极层形成包括第二栅极的图形,其中,所述第一栅极层或所述第二栅极层为光敏材料层;
在所述顶层栅极介电层和所述第二栅极上形成钝化层。
第三方面,本发明提供了一种阵列基板,包括第一方面所述的TFT。
第四方面,本发明提供了一种显示面板,包括第一方面所述的TFT。
第五方面,本发明提供了一种显示面板的驱动方法,包括:
接收环境光和第一输出信号,根据所述环境光的光照强度和所述第一输出信号,控制薄膜晶体管TFT调整通过所述TFT的电流信号;
或者,接收环境光和电压控制模块的第二输出信号,根据所述环境光和所述第二输出信号,控制TFT调整通过所述TFT的电流信号;
根据通过所述TFT的电流信号,控制电压控制模块调整输出到TFT的第二输出信号。
第六方面,本发明提供了一种显示装置,所述显示装置包括第四方面中所述的显示面板。
本发明提供的TFT及制作方法、阵列基板、显示面板及驱动方法、显示装置中,TFT包括第一栅极和第二栅极,其中,第一栅极或第二栅极为光敏材料栅极,与在显示装置中设置环境光传感器的现有技术相比,本发明中TFT中的光敏材料栅极接收到环境光时,根据环境光的强度,控制TFT的打开程度,从而改变通过TFT的源、漏极的电流的大小,从而调节设置有TFT的显示装置的显示画面的亮度,不需要在显示装置中安装环境光传感器,省去了为环境光传感器提供的工作电能,从而减小了显示装置的功耗。
附图说明
此处所说明的附图用来提供对本发明的进一步理解,构成本发明的一部分,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:
图1为本发明实施例中TFT的结构示意图之一;
图2为本发明实施例中光敏材料栅极接收到的光的照度与通过TFT源、漏极的电流的关系示意图;
图3为本发明实施例中TFT的结构示意图之二;
图4为本发明实施例中TFT的制作方法的流程图;
图5为本发明实施例中显示面板中测试区的结构示意图之一;
图6为本发明实施例中显示面板中测试区的结构示意图之二;
图7为非光敏材料栅极接收到的输出信号的电压与通过TFT的源、漏极的电流的关系示意图;
图8为本发明实施例中电源管理单元的结构示意图;
图9为本发明实施例中显示面板的驱动方法的流程图之一;
图10为本发明实施例中显示面板的驱动方法的流程图之二;
图11为本发明实施例中显示面板的驱动方法的流程图之三;
图12为本发明实施例中显示面板的驱动方法的流程图之四。
附图标记:
10-衬底基板, 11-第一栅极,
12-底层栅极介电层, 13-绝缘层,
14-源极和漏极, 15-顶层栅极介电层,
16-第二栅极, 17-钝化层,
20-TFT, 21-电压控制模块,
211-电流/电压转换单元, 212-处理单元,
213-电源管理单元。
具体实施方式
为了进一步说明本发明实施例提供的TFT及制作方法、阵列基板、显示面板及驱动方法、显示装置,下面结合说明书附图进行详细描述。
请参阅图1,本发明实施例提供的TFT(Thin Film Transistor,TFT)包括衬底基板10,在衬底基板10上依次层叠设有第一栅极11、底层栅极介电层12和绝缘层13,在绝缘层13上设有源极和漏极14,在源极、漏极14和绝缘层13上依次层叠设有顶层栅极介电层15、第二栅极16和钝化层17;也就是说,本发明实施例中的TFT为双栅结构,其中,第一栅极11或第二栅极16为光敏材料栅极,也就是说,第一栅极11和第二栅极16中有一个是光敏材料栅极,另一个为非光敏材料栅极。具体的,如果要求光敏材料栅极对可见光反应灵敏,则制作光敏材料栅极的光敏材料可以为Se、Si、BiS和/或Ge等材料;如果要求光敏材料栅极对红外光反应灵敏,则制作光敏材料栅极的光敏材料可以为Pb和/或PbSe等材料;如果要求光敏材料栅极对紫外光反应灵敏,则制作光敏材料栅极的光敏材料可以为ZnO、ZnS和/或CdS等材料。本发明实施例中的TFT相当于具有光敏特性的TFT与不具有光敏特性的TFT并联。光敏材料栅极由光敏材料制成,当有光照射到TFT中的光敏材料栅极上时,TFT开启,且光照越强,TFT打开程度越大,通过源极和漏极的电流就越大。当设置有本发明实施例中的TFT的显示装置周围的环境光的强度发生变化时,即照射到TFT的光敏材料栅极的光的强度发生变化时,TFT的打开程度也发生变化,通过TFT的源、漏极14的电流也发生变化,从而使得显示装置的亮度发生改变,显示装置周围的环境光的强度越大,TFT打开程度越大,通过TFT的源、漏极14的电流也越大,显示装置的亮度也越大。
图2为光敏材料栅极接收到的环境光的强度与通过TFT的源、漏极14的电流的关系示意图,其中IDS为通过TFT的源、漏极14的电流,L为TFT中光敏材料栅极接收到的环境光的照度,用来表示环境光的强度,如图2所示,环境光的强度越大,通过TFT的源、漏极14的电流就越大,即TFT的打开程度就越大。
本发明提供的TFT包括第一栅极11和第二栅极16,其中,第一栅极11或第二栅极16为光敏材料栅极,与在显示装置中设置环境光传感器的现有技术相比,本发明中TFT中的光敏材料栅极接收到环境光时,根据环境光的强度,控制TFT的打开程度,从而改变通过TFT的源、漏极14的电流的大小,从而调节设置有TFT的显示装置的显示画面的亮度,不需要在显示装置中安装环境光传感器,省去了为环境光传感器提供的工作电能,从而减小了显示装置的功耗。
具体的,衬底基板10可以为玻璃基板,绝缘层13可以为非晶硅层,绝缘层13采用非晶硅制作,使得绝缘层的制作过程与现有的TFT制作过程相合性最高。为了保证光敏材料栅极能够接收到环境光,当第二栅极16为光敏材料栅极,第一栅极11为非光敏材料栅极时,位于第二栅极16上方的钝化层17为透明材料层,具体的,钝化层17可以为表面平整的透明材料层,也可以为如图3所示的凸面透明材料层,从而将环境光聚集至光敏材料栅极,使光敏材料栅极能够更准确的获取到环境光的光照强度;当第一栅极11为光敏材料栅极,第二栅极16为非光敏材料栅极时,第一栅极11上方的各层也为透明材料层,或者部分为透明材料层,只要能够使光敏材料栅极接收到环境光线的结构均属于本发明的保护范围。
请参阅图4,本发明还提供了一种上述实施例中的TFT的制作方法,具体包括:
步骤301,在衬底基板上形成第一栅极层,通过构图工艺在第一栅极层形成包括第一栅极的图形。
步骤302,在衬底基板和第一栅极上依次形成底层栅极介电层和绝缘层。其中,第一栅极上设置底层栅极介电层,在底层栅极介电层上设置绝缘层,绝缘层具体可以为非晶硅层。。
步骤303,在绝缘层上形成源/漏极层,通过构图工艺在源/漏极层形成包括源极和漏极的图形。
步骤304,在绝缘层、源极和漏极上形成顶层栅极介电层。
步骤305,在顶层栅极介电层上形成第二栅极层,通过构图工艺在第二栅极层形成包括第二栅极的图形,其中,第一栅极层或第二栅极层为光敏材料层。
步骤306,在顶层栅极介电层和第二栅极上形成钝化层。
本发明提供的TFT的制作方法中,在衬底基板上形成第一栅极层,通过构图工艺形成包括第一栅极的图形,在顶层栅极介电层上形成第二栅极层,通过构图工艺形成包括第二栅极的图形,第一栅极层或第二栅极层为光敏材料层,与在显示装置中设置环境光传感器的现有技术相比,本发明中第一栅极层或第二栅极层为光敏材料层,使得通过构图工艺形成的第一栅极或第二栅极为光敏材料栅极,制作出的TFT中的光敏材料栅极接收到环境光时,根据环境光的强度,控制TFT的打开程度,从而改变通过TFT的源、漏极的电流的大小,从而调节设置有TFT的显示装置的显示画面的亮度,不需要在显示装置中安装环境光传感器,省去了为环境光传感器提供的工作电能,从而减小了显示装置的功耗。
本发明实施例提供了一种阵列基板,所述阵列基板包括上述实施例中的TFT,阵列基板中的TFT与上述实施例中的TFT具有的优势相同,此处不再赘述。
本发明实施例还提供了一种显示面板,所述显示面板包括上述实施例中的TFT,显示面板中的TFT与上述实施例中的TFT具有的优势相同,此处不再赘述。
具体的,显示面板的具体结构可以为以下两种:
其一,显示面板中的所有的TFT均为上述实施例中具有光敏材料栅极的TFT20,TFT20在显示面板中用于根据光敏材料栅极接收到的环境光的光照强度和非光敏材料栅极接收到的第一输出信号,调整通过所述TFT的电流信号。也就是说,显示面板中的每一个TFT均能够根据接收到的环境光和第一输出信号,来调整过源/漏极之间的电流的大小。
其二,请参阅图5,显示面板包括显示区和测试区,其中,测试区包括上述实施例中具有光敏材料栅极的TFT20以及电压控制模块21,其中,TFT20与电压控制模块21连接。TFT20用于根据接收到的光的光照强度和电压控制模块21的第二输出信号,调整通过TFT20的电流信号;电压控制模块21用于根据通过TFT20的电流信号,调整电压控制模块21的第二输出信号;电压控制模块21产生的第二输出信号又作为TFT20的输入信号之一通入TFT20,TFT20的另一输入信号为环境光。
本发明实施例提供的显示面板包括上述实施例中的TFT20,与需要在显示装置中的显示面板中设置环境光传感器的现有技术相比,本发明中的显示面板中的TFT20接收环境光和第一输入信号作为输入信号,或者接收环境光和电压控制模块21的第二输出信号作为输入信号,并根据TFT20接收环境光的强度以及第一输出信号或第二输出信号,调整通过TFT20的电流信号。本发明中的TFT20的打开程度由电压控制模块21的输出信号和环境光共同控制,不需要安装环境光传感器,省去了为环境光传感器提供的工作电能,减小了显示装置的功耗。而且,由于TFT20最终的打开程度是第一输出信号控制的打开程度与受到的环境光的光照强度控制的打开程度的叠加效果,或者是第二输出信号控制的打开程度与受到的环境光的光照强度控制的打开程度的叠加效果,因此想要显示装置的显示画面达到某一亮度,第一输出信号的电压或第二输出信号的电压可适当降低,从而进一步降低了显示装置的功耗。
请参阅图6,下面将详细说明上述实施例中电压控制模块21的具体组成,电压控制模块21包括电流/电压转换单元211、处理单元212和电源管理单元213;其中,电流/电压转换单元211与TFT20连接,用于将通过TFT20的电流信号转化为电压信号;处理单元212与电流/电压单元连接,用于根据电流/电压转换模块转化输出的电压信号,输出调整信号,调整信号用于控制电源管理单元213调整向TFT20输出的第二输出信号,具体的,处理单元212可以为CPU(Central Processing Unit,中央处理器)或TCON(Timing controller,时序控制电路)等;电源管理单元213分别与处理单元212和TFT20连接,用于根据处理单元212输出的调整信号,调整向TFT20输出的第二输出信号,电源管理单元213具体可以为PMIC(PowerManagement Integrated Circuit,电源管理集成电路)等。具体的,处理单元212还可以设有通信接口,处理单元212通过通信接口与电源管理单元213进行通信,比如,通信接口可以为I2C(Inter-Integrated Circuit,两线式串行总线)或SPI(Serial PeripheralInterface,串行外设接口)等。
当TFT20的第一栅极为光敏材料栅极时,第二栅极与电源管理单元213连接,TFT20的第一极与数据信号端连接,TFT20的第二级与电流/电压转换单元211连接;第一极和第二极中一个为源极,另一个为漏极。或者,当TFT20的第二栅极为光敏材料栅极时,第一栅极与电源管理单元213连接,TFT20的第一极与数据信号端连接,TFT20的第二级与电流/电压转换单元211连接;第一极和第二极中一个为源极,另一个为漏极。
显示面板中的测试区还可以包括液晶电容C1和公共电极COM,其中,液晶电容C1为显示装置中的液晶的等效电容,液晶电容C1的第一端连接TFT20的第二极,液晶电容C1的第二端连接公共电极COM,数据信号端通过TFT20向液晶电容C1提供显示装置中数据线的数据信号。
下面以TFT20的第二栅极为光敏材料栅极为例来进行说明,TFT20的第二栅极接收到环境光,使得TFT20打开,TFT20的第一栅极接收到电压控制模块21中电源管理单元213的输出信号,TFT20继续打开,增大了TFT20的打开程度。在第二栅极接收到环境光,使得TFT20打开的基础上,电源管理模块提供的输出信号的电压可以较低,就能够达到显示装置的显示画面预期的亮度。
图7为非光敏材料栅极接收到的输出信号的电压VGH与通过TFT20的源、漏极的电流IDS之间的关系示意图,如图2所示,在TFT20的线性区内,当输出信号的电压VGH增大时,TFT20的源、漏极的电流IDS也随之增加。在现有技术中,TFT20中只设置有一个栅极,且该栅极使用非光敏材料制成,当显示装置某一时刻的显示画面需要达到的亮度一定时,也就是说需要通过TFT20的源、漏极的电流一定时,TFT20的打开程度由栅极接收到的信号控制,所以需要给TFT20的栅极较高电压的信号,才能够使TFT20打开到预期的程度。而在本发明实施例中,光敏材料栅极根据接收的环境光的光照强度能够控制TFT20的打开程度,非光敏材料栅极接收的第一输出信号或第二输出信号也能够控制TFT20的打开程度,TFT20最终的打开程度是由光敏材料栅极控制TFT20的打开程度与非光敏材料栅极控制TFT20的打开程度的叠加,因此非光敏材料栅极接收的第一输出信号或第二输出信号的电压较低,就可以使TFT20打开的预期的程度。
请参阅图8,上述实施例中的电源管理单元213可以包括供电电源Vin、电感元件L、稳压二极管D1和开关管T;供电电源Vin连接电感元件L的第一端,电感元件L的第二端分别连接开关管T的第一级和稳压二极管D1的输入端,稳压二极管D1的输出端连接TFT20,开关管T的控制端连接处理单元212,开关管T的第二极接地,具体的,开关管T的第二极可以通过等效电阻R接地GND,供电电源Vin和电感元件L的第一端还可以连接等效电容C2的一端,等效电容C2的另一端接地GND。
其中,处理单元212的输出信号输入至开关管T的控制端,控制开关管T的开启和闭合,具体的,可以通过调整处理单元212的输出信号的占空比,控制开关管T的开启时长和关闭时长,从而控制电感元件L存储的电量,以及电感元件L通过稳压二极管D1传输给TFT20的第二输出信号的电压的大小。处理单元212中还可以设置有寄存器和数模转换器,通过改写处理单元212中的寄存器,来调整处理单元212的输出信号的占空比,通过数模转换器生成处理单元212的输出信号,处理单元212的输出信号可以为PWM(Pulse Width Modulation,脉冲宽度调制)信号。
本发明实施例还提供了一种显示装置,显示装置中包括上述实施例中的显示面板。具体的,显示装置可以为电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。所述显示装置中的显示面板与上述实施例中的显示面板具有的优势相同,此处不再赘述。
请参阅图9,本发明实施例还提供了上述显示面板的驱动方法,包括步骤401,具体内容如下:
步骤401,接收环境光和第一输出信号,根据环境光的光照强度和第一输出信号,控制TFT调整通过TFT的电流信号。其中,TFT中光敏材料栅极接收环境光,第一输出信号由电源直接提供。
请参阅图10,本发明实施例还提供了上述显示面板的驱动方法,包括步骤402-步骤403,具体内容如下:
步骤402,接收环境光和电压控制模块的第二输出信号,根据环境光的光照强度和第二输出信号,控制TFT调整通过TFT的电流信号。
步骤403,根据通过TFT的电流信号,控制电压控制模块调整输出到TFT的第二输出信号。
需要说明的是,步骤401以及步骤402至步骤403的具体内容参见显示面板的相关说明,在此不再赘述。显示面板的驱动方法的优势上述实施例中的显示面板具有的优势相同,此处也不再赘述。
具体的,请参阅图11,上述实施例中的步骤403还可以细化为步骤4031-步骤4033,具体内容如下:
步骤4031,控制电流/电压转换单元将通过TFT的电流信号转化为电压信号。
步骤4032,控制处理单元根据电压信号,向电源管理单元发送调整信号。
步骤4033,控制电源管理单元根据调整信号,调整向TFT输出的第二输出信号。
需要说明的是,步骤4031至步骤4033的具体内容参见显示面板的相关说明,在此不再赘述。
具体的,请参阅图12,上述实施例中的步骤4033可以细化为步骤4034和步骤4035,具体内容如下:
步骤4034,接收调整信号,根据调整信号确定开关管的开启时长和关闭时长。其中,调整信号用于控制开关管的开启和关闭,从而可以根据调整信号确定开关管的开启时长和关闭时长。
步骤4035,根据开关管的开启时长和关闭时长,调整供电电源向TFT提供的输出信号。
需要说明的是,步骤4034至步骤4035的具体内容参见显示面板的相关说明,在此不再赘述。
本说明书中的各个实施例均采用递进的方式描述,各个实施例之间相同相似的部分互相参见即可,每个实施例重点说明的都是与其他实施例的不同之处。尤其,对于TFT的制作方法、显示装置和显示面板的驱动方法而言,由于其基本相似于TFT实施例和显示面板实施例,所以描述得比较简单,相关之处参见TFT实施例和显示面板实施例的说明部分即可。
在上述实施方式的描述中,具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。

Claims (17)

1.一种薄膜晶体管TFT,其特征在于,包括衬底基板,在衬底基板上依次层叠设有第一栅极、底层栅极介电层和绝缘层,在所述绝缘层上设有源极和漏极,在所述源极、所述漏极和所述绝缘层上依次层叠设有顶层栅极介电层、第二栅极和钝化层;所述第一栅极或所述第二栅极为光敏材料栅极。
2.根据权利要求1所述的TFT,其特征在于,所述绝缘层为非晶硅层。
3.根据权利要求1所述的TFT,其特征在于,所述钝化层为凸面透明材料层。
4.一种薄膜晶体管TFT的制作方法,其特征在于,包括:
在衬底基板上形成第一栅极层,通过构图工艺在所述第一栅极层形成包括第一栅极的图形;
在所述衬底基板和所述第一栅极上依次形成底层栅极介电层和绝缘层;
在所述绝缘层上形成源/漏极层,通过构图工艺在所述源/漏极层形成包括源极和漏极的图形;
在所述绝缘层、所述源极和所述漏极上形成顶层栅极介电层;
在所述顶层栅极介电层上形成第二栅极层,通过构图工艺在所述第二栅极层形成包括第二栅极的图形,其中,所述第一栅极层或所述第二栅极层为光敏材料层;
在所述顶层栅极介电层和所述第二栅极上形成钝化层。
5.根据权利要求4所述的TFT的制作方法,其特征在于,所述绝缘层为非晶硅层。
6.一种阵列基板,其特征在于,包括权利要求1-3中任意一项所述的薄膜晶体管TFT。
7.一种显示面板,其特征在于,包括权利要求1-3中任意一项所述的薄膜晶体管TFT。
8.根据权利要求7所述的显示面板,其特征在于,所述显示面板中的TFT均为权利要求1-3中任意一项所述的薄膜晶体管TFT,所述TFT用于根据光敏材料栅极接收到的环境光的光照强度和非光敏材料栅极接收到的第一输出信号,调整通过所述TFT的电流信号。
9.根据权利要求7所述的显示面板,其特征在于,所述显示面板包括显示区和测试区;所述测试区包括权利要求1-3中任意一项所述的TFT和与所述TFT连接的电压控制模块;其中,
所述TFT用于根据接收到的环境光的光照强度和所述电压控制模块的第二输出信号,调整通过所述TFT的电流信号;
所述电压控制模块用于根据通过所述TFT的电流信号,调整所述电压控制模块的第二输出信号。
10.根据权利要求9所述的显示面板,其特征在于,所述电压控制模块包括电流/电压转换单元、处理单元和电源管理单元;其中,
所述电流/电压转换单元与所述TFT连接,用于将通过所述TFT的电流信号转化为电压信号;
所述处理单元与所述电流/电压单元连接,用于根据所述电流/电压转换模块转化输出的电压信号,输出调整信号,所述调整信号用于控制所述电源管理单元调整向所述TFT输出的第二输出信号;
所述电源管理单元分别与所述处理单元和所述TFT连接,用于根据所述处理单元输出的所述调整信号,调整向所述TFT输出的第二输出信号。
11.根据权利要求10所述的显示面板,其特征在于,所述TFT的所述第一栅极为光敏材料栅极,所述第二栅极与所述电源管理单元连接,所述TFT的第一极与数据信号端连接,所述TFT的第二级与所述电流/电压转换单元连接;所述第一极和第二极中一个为源极,另一个为漏极;
或者,所述TFT的所述第二栅极为光敏材料栅极,所述第一栅极与所述电源管理单元连接,所述TFT的第一极与数据信号端连接,所述TFT的第二级与所述电流/电压转换单元连接;所述第一极和第二极中一个为源极,另一个为漏极。
12.根据权利要求10所述的显示面板,其特征在于,所述电源管理单元包括供电电源、电感元件、稳压二极管和开关管;其中,所述供电电源连接所述电感元件的第一端,所述电感元件的第二端分别连接所述开关管的第一级和所述稳压二极管的输入端,所述稳压二极管的输出端连接所述TFT,所述开关管的控制端连接所述处理单元,所述开关管的第二极接地。
13.根据权利要求9所述的显示面板,其特征在于,所述测试区还包括液晶电容和公共电极;其中,所述液晶电容的第一端连接所述TFT的第二极,所述液晶电容的第二端连接所述公共电极。
14.根据权利要求10所述的显示面板,其特征在于,所述处理单元设有通信接口,处理单元通过所述通信接口与所述电源管理单元进行通信。
15.一种显示面板的驱动方法,其特征在于,所述显示面板的驱动方法用于驱动权利要求10~14任一项所述的显示面板,包括:
接收环境光和电压控制模块的第二输出信号,根据所述环境光的光照和所述第二输出信号,控制TFT调整通过所述TFT的电流信号;
根据通过所述TFT的电流信号,控制电压控制模块调整输出到TFT的第二输出信号;
所述根据通过所述TFT的电流信号,控制电压控制模块调整输出到TFT的第二输出信号的步骤,包括:
控制电流/电压转换单元将通过所述TFT的电流信号转化为电压信号;
控制处理单元根据所述电压信号,向电源管理单元发送调整信号;
控制电源管理单元根据所述调整信号,调整向所述TFT输出的第二输出信号。
16.根据权利要求15所述的显示面板的驱动方法,其特征在于,所述控制所述电源管理单元根据所述调整信号,调整向所述TFT输出的第二输出信号的步骤,包括:
接收所述调整信号,根据所述调整信号确定开关管的开启时长和关闭时长;
根据所述开关管的开启时长和关闭时长,调整供电电源向所述TFT提供的所述第二输出信号。
17.一种显示装置,其特征在于,包括权利要求7-14中任意一项所述的显示面板。
CN201610177105.3A 2016-03-25 2016-03-25 Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置 Expired - Fee Related CN105573000B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201610177105.3A CN105573000B (zh) 2016-03-25 2016-03-25 Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置
PCT/CN2016/088086 WO2017161731A1 (zh) 2016-03-25 2016-07-01 Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置
US15/531,518 US10176782B2 (en) 2016-03-25 2016-07-01 TFT and manufacturing method thereof, array substrate, display panel and diving method, display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610177105.3A CN105573000B (zh) 2016-03-25 2016-03-25 Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置

Publications (2)

Publication Number Publication Date
CN105573000A CN105573000A (zh) 2016-05-11
CN105573000B true CN105573000B (zh) 2019-05-03

Family

ID=55883299

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610177105.3A Expired - Fee Related CN105573000B (zh) 2016-03-25 2016-03-25 Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置

Country Status (3)

Country Link
US (1) US10176782B2 (zh)
CN (1) CN105573000B (zh)
WO (1) WO2017161731A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105573000B (zh) 2016-03-25 2019-05-03 京东方科技集团股份有限公司 Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置
CN107424579B (zh) * 2017-08-16 2020-06-05 昆山龙腾光电股份有限公司 一种嵌入式光感应驱动系统及其驱动方法
CN108806627B (zh) * 2018-06-15 2020-12-04 北京小米移动软件有限公司 环境光亮度确定方法、装置及存储介质
CN110718560B (zh) 2019-09-30 2021-05-07 武汉华星光电技术有限公司 阵列基板及其制备方法和显示面板
CN112083593B (zh) * 2020-09-29 2021-12-03 Tcl华星光电技术有限公司 显示面板及显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103411669A (zh) * 2013-05-15 2013-11-27 友达光电股份有限公司 光感测电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003098538A (ja) * 2001-09-20 2003-04-03 Seiko Epson Corp 電気光学装置及びその製造方法
CN100403098C (zh) * 2004-07-30 2008-07-16 友达光电股份有限公司 光输入显示面板及其画素结构
TWI458112B (zh) 2012-01-03 2014-10-21 Ind Tech Res Inst 電晶體的操作方法
KR20130111874A (ko) * 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법
KR101483026B1 (ko) * 2012-08-31 2015-01-15 엘지디스플레이 주식회사 산화물 박막트랜지스터를 포함하는 기판 및 이의 제조방법, 이를 이용한 액정표시장치용 구동회로
KR20140056565A (ko) * 2012-10-29 2014-05-12 삼성디스플레이 주식회사 유기 발광 표시 장치, 박막 트랜지스터 표시판 및 그 제조 방법
TWI491032B (zh) * 2013-02-05 2015-07-01 Innolux Corp 主動矩陣式影像感測面板及裝置
KR20150011219A (ko) * 2013-07-22 2015-01-30 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 박막 트랜지스터 기판
CN103762251B (zh) * 2014-01-22 2016-03-30 中山大学 一种双栅极光电薄膜晶体管、像素电路及像素阵列
CN103956142B (zh) * 2014-05-15 2016-03-09 深圳市华星光电技术有限公司 面板驱动电路及面板驱动方法
CN105573000B (zh) 2016-03-25 2019-05-03 京东方科技集团股份有限公司 Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103411669A (zh) * 2013-05-15 2013-11-27 友达光电股份有限公司 光感测电路

Also Published As

Publication number Publication date
US20180174552A1 (en) 2018-06-21
US10176782B2 (en) 2019-01-08
WO2017161731A1 (zh) 2017-09-28
CN105573000A (zh) 2016-05-11

Similar Documents

Publication Publication Date Title
CN105573000B (zh) Tft及制作方法、阵列基板、显示面板及驱动方法、显示装置
CN104217679B (zh) 像素电路及其驱动方法、显示装置
JP4477379B2 (ja) 液晶表示パネル、これを具備した液晶表示装置及びこの製造方法
CN101666931B (zh) 液晶显示器、薄膜晶体管液晶显示器的阵列基板及其制造方法
CN105185318B (zh) 栅线驱动电路、输出发射控制信号的电路及触控显示装置
TWI237718B (en) Liquid crystal display device performing both image display mode and fingerprint recognition mode
CN104914602B (zh) 显示装置和阵列基板
CN105159490B (zh) 触控显示面板及其驱动方法和触控显示装置
KR20050065971A (ko) 광감지 패널과, 이를 갖는 액정 표시 장치
CN106156753A (zh) 指纹识别的阵列基板及其制作方法、显示装置
CN107564474B (zh) 一种触控面板及触摸屏
CN102914920A (zh) 一种电容式内嵌触摸屏、其驱动方法及显示装置
CN110349976A (zh) 阵列基板及其制备方法、显示面板和显示装置
US10642406B2 (en) Touch display panel, driving method thereof and touch display device
CN104934001B (zh) 一种液晶显示装置
CN103761002B (zh) 一种触控电路及其单元和触控显示面板及其装置
CN209070955U (zh) 背光调节电路和液晶显示装置
CN107527600A (zh) 一种显示面板及显示装置
CN101655644B (zh) 具触控功能的基板、液晶显示器及驱动该基板的操作方法
CN206147565U (zh) 一种触控显示面板、触控显示装置
CN104620154B (zh) 显示面板、显示装置和制造方法
CN208488622U (zh) 显示屏及电子设备
CN105633093B (zh) 薄膜晶体管阵列基板
JP7372969B2 (ja) アレイ基板及び表示パネル
CN106019737A (zh) 显示面板及其制备方法、显示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190503