TWI458112B - 電晶體的操作方法 - Google Patents
電晶體的操作方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000005286 illumination Methods 0.000 claims description 14
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 206010034960 Photophobia Diseases 0.000 description 7
- 208000013469 light sensitivity Diseases 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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- G09G2300/0439—Pixel structures
- G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
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- G—PHYSICS
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- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Human Computer Interaction (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
本發明是有關於一種操作方法,且特別是有關於一種電晶體的操作方法。
觸控面板普遍應用在智慧型手機、平板電腦、工業電腦以及商業電腦上,產值與市場相當龐大。現有之觸控面板技術,按感測器工作原理和信號傳輸方式,可分為電容型、電阻型、紅外線型和聲波型。上述之觸控式面板都必須在現有之顯示器上附加額外之觸控物件,因此會降低顯示器之光穿透度,以及增加外界光之反射,而附加之觸控物件更會增加觸控式顯示器之成本。
其中,若利用光偵測器在面板上作成觸控螢幕,可減少上述外界光反射、製作成本等問題,然而光偵測器會犧牲畫素的開口率,顯示器之光穿透度仍無法有效提升。而一般的薄膜電晶體(Thin Film Transistor,TFT)用來控制畫素的灰階,需以遮光(black matrix)或減少照光敏感度(例如透明TFT)等方式,來減少光線的影響,因此一般的薄膜電晶體無法同時作為光偵測器以及畫素開關,做成觸控螢幕須在面板上單獨製作光偵測器,會犧牲畫素的開口率並增加製作成本。
本發明一實施例提供一種電晶體的操作方法,同時作為光偵測器以及畫素開關。
本發明一實施例提供一種電晶體的操作方法,適用於一電晶體,此電晶體包含第一閘極、第一閘極絕緣層、半導體主動層、源極、汲極、第二閘極絕緣層以及第二閘極。其中第一閘極絕緣層位於第一閘極上,半導體主動層位於第一閘極絕緣層上,源極與汲極相互分離地位於半導體主動層的兩側上,第二閘極絕緣層位於半導體主動層上,第二閘極位於第二閘極絕緣層上,電晶體的操作方法,包含:可將第一閘極與源極接地,施加負偏壓至第二閘極並施加正偏壓至汲極,以使電晶體作為光偵測器。
或者,於本發明一實施例另提供一電晶體的操作方法,包含:可將源極接地,第二閘極接地或浮接,施加偏壓至第一閘極並施加正偏壓至汲極,以使電晶體作為畫素電晶體。
運用本發明的特點之一在於:使具有二個閘極的電晶體可作為畫素開關之外,亦可作為光偵測器使用;同時更可利用此電晶體對光之敏感度的特性而能夠作為觸控式元件。
為讓本發明之上述特徵能更明顯易懂,茲配合圖式將本發明相關實施例詳細說明如下。
請參閱圖1,圖1為本發明一實施例電晶體的操作方法其電晶體的結構示意圖。
如圖1所示,電晶體1包含第一閘極11、第一閘極絕緣層12、半導體主動層13、源極14、汲極15、第二閘極絕緣層16以及第二閘極17。
詳言之,第一閘極絕緣層12位於第一閘極11上;半導體主動層13位於第一閘極絕緣層12上;源極14與汲極15相互分離地位於半導體主動層13的兩側上;第二閘極絕緣層16位於半導體主動層13上;第二閘極17而位於第二閘極絕緣層16上。
較佳地,第一閘極11為金屬閘極。所述第一閘極11更可用以控制半導體主動層13的導電率。第一閘極絕緣層12用以隔絕第一閘極11與半導體主動層13、源極14以及汲極15的接觸。其中,第一閘極絕緣層12更包含二氧化矽(SiO2
)或氮化矽(SiN4
)。
半導體主動層13包含金屬氧化物,此金屬氧化物可為氧化鋅(ZnO)、銦鎵鋅氧化物(IGZO)、氧化鋅錫(ZTO)、銦鋅氧化物(IZO)或氧化銦錫鋅(ZITO),但不限定於此。第二閘極絕緣層16用以隔絕第二閘極17與半導體主動層13、源極14以及汲極15的接觸。其中,第二閘極絕緣層16更包含二氧化矽或氮化矽。且第二閘極17更可用以控制半導體主動層13的導電率。較佳地,第二閘極17為包含氧化銦錫(ITO)的透明閘極。
根據上述電晶體1的結構可知,半導體主動層13與第一閘極絕緣層12之間更具有供光源L通過的第一通道T1;相同地,半導體主動層13與第二閘極絕緣層16之間亦具有供光源L通過的第二通道T2。
值得一提的是,關於上述電晶體1的層疊結構僅供說明以利理解,亦即電晶體1之層疊結構中的每一層間的層疊順序可相互置換,並不限定於上述說明或圖1所示之型態。例如,第一閘極11與第二閘極17可分別作為電晶體1的下閘極或上閘極;或者,第一閘極11與第二閘極17可分別作為電晶體1的上閘極或下閘極。
請參閱圖1、圖2A、圖2B、圖3與圖4;圖2A為本發明一實施例電晶體的操作方法之流程圖;圖2B為本發明另一實施例電晶體的操作方法之流程圖;圖3為以圖1之第二閘極當作控制閘極之操作下照光與暗態環境之電性示意圖;圖4為以圖1之第一閘極當作控制閘極之操作下照光與暗態環境之電性示意圖。
如圖2A所示,電晶體的操作方法可包含:將第一閘極與源極接地(步驟S110);施加負偏壓至第二閘極並施加正偏壓至汲極以使電晶體作為光偵測器(步驟S120)。
或者,如圖2B所示,電晶體的操作方法可包含:將源極接地並將第二閘極接地或浮接(步驟S130);施加偏壓至第一閘極並施加正偏壓至汲極以使電晶體作為畫素電晶體(步驟S140)。
其中,步驟S110~步驟S120(電晶體作為光偵測器)與步驟S130~步驟S140(電晶體作為畫素電晶體)兩種操作方法可依實際需求而互換使用。例如,電晶體可作為光偵測器;或者,電晶體可作為畫素電晶體。另外,上述浮接(floating)意指不接任何訊號源,此為該領域之技術人士所能夠理解之範疇,於此不加贅述。
詳言之,如圖1與圖3所示,於步驟S110與步驟S120中,汲極15給予正偏壓(例如,0.1伏特),源極14為接地(例如,0伏特)。
若以第二閘極17(其為包含氧化銦錫(ITO)的透明閘極)當作控制閘極(可施以例如,-15伏特~+15伏特的電壓)(此時第一閘極11為0伏特)。較佳地,當第二閘極17操作在負偏壓時,在照光環境下會有明顯之光電流產生,此時電晶體1即可當成光偵測器使用。以此光敏感度之差異,可利用遮蔽物(例如,手指或觸控筆)阻擋光源L(例如,外界入射光),或者經由物件反射背光源所產生之光訊號差異,藉由讀取電流訊號之差異達到觸控式元件之使用。
另一方面,如圖1與圖4所示,於步驟S130與步驟S140中,汲極15給予正偏壓(例如,0.1伏特),源極14為接地(例如,0伏特)。
若以第一閘極11當成控制閘極時(可施以例如,-15伏特~+15伏特的電壓)(此時第二閘極17為0伏特或浮接(floating)),於此實施例中,當第一閘極11操作在負、正偏壓時,不論照光或是暗態環境下,電晶體1會呈現關與開的特性,此時電晶體1可當作顯示器上之畫素電晶體開關來使用。
由此可知,利用不同閘極(例如,第一閘極與第二閘極)控制下介面特性之差異,造成不同之光敏感度,在光敏感度較差之閘極控制區域可作為畫素開關使用,而光敏感度較強之閘極控制區域即可作為光偵測器元件使用。
然而,上述之參數條件僅供參考以利理解電晶體1作為光偵測器、觸控式元件或畫素開關的操作方式與原理,其並非限定於此。於實務中,操作者可依據實際之需求而對電晶體1施加不同的工作條件(例如不同的電壓範圍或時間條件等)。
請同時參閱圖1、圖5與圖6,圖5為以圖1之第二閘極當作控制閘極之操作下照光與暗態環境之能帶示意圖;圖6為以圖1之第一閘極當作控制閘極之操作下照光與暗態環境之能帶示意圖。
如圖1與圖5所示,當光源L(例如,外界光)入射至第二閘極控制之第二通道T2(例如,背通道區域)時,由於第二通道T2介面處有較多之缺陷所以會導致第二通道T2在照光時會有大量之缺陷輔助光激發電子電洞對產生(trap assisted photogenarated electron hole pair),而電洞會受汲極15正電壓之影響被排擠至源極14導致源極14之能障降低,產生大量之光漏電流。利用第二通道T2操作時對光之敏感度即可作為光偵測器使用,而利用電流在照光以及暗態環境下之差異判斷外界入射光是否被遮蔽(例如被手指或觸控筆遮蔽),或者經由物件反射背光源所產生之光訊號差異,利用此操作原理使電晶體1可當作觸控式元件來使用。
如圖1與圖6所示,若在第一閘極11當作控制閘極之第一通道T1(例如,前通道區域),由於缺陷數目少,因此在照光環境下並不容易產生光激發電子電洞對,因此對於照光之敏感度就不顯著。
請參閱圖7,圖7為本發明一實施例電晶體的操作方法其所施加之光源的光譜圖。
承上述,光源L(例如圖3~圖6之說明)能夠為可見光,且光源L之波長與相對強度如圖7所示(例如:光源波長大約為400(nm)~700(nm);光源強度可為10000 lux)。另外,於上述說明中,半導體主動層13之金屬氧化物以銦鎵鋅氧化物(IGZO)為例。然而,這些條件僅供參考以利理解,並非限定於此。
由上述可知,若第一閘極11與第二閘極17分別對光敏感度有所差異,即可將電晶體1當作光偵測器或畫素電晶體(畫素開關)來使用。
值得一提的是,上述第一閘極11與第二閘極17對光敏感度的差異可相互置換。例如,第一閘極11與第二閘極17可分別作為畫素電晶體(畫素開關)或光偵測器來使用;或者,第一閘極11與第二閘極17可分別作為光偵測器或畫素電晶體(畫素開關)來使用,此時,上述第一閘極11與第二閘極17的操作條件需隨之相互置換。
承上述,本發明實施例所述電晶體的操作方法,具有下列之特點:
1.利用不同閘極(如第一閘極與第二閘極)的操作,使電晶體可作為畫素開關之外,亦可作為光偵測器使用。
2.可利用電晶體對光之敏感度的特性以使電晶體作為觸控式元件。
3.能夠有效提昇畫素的開口率,並大幅降低觸控面板的製作成本,因此可直接被應用在目前的半導體及光電產業。
綜上所述,乃僅記載本發明為呈現解決問題所採用的技術手段之較佳實施方式或實施例而已,並非用來限定本發明專利實施之範圍。即凡與本發明專利申請範圍文義相符,或依本發明專利範圍所做的均等變化與修飾,皆為本發明專利範圍所涵蓋。
1...電晶體
11...第一閘極
12...第一閘極絕緣層
13...半導體主動層
14...源極
15...汲極
16...第二閘極絕緣層
17...第二閘極
L...光源
T1...第一通道
T2...第二通道
步驟 S110~140
圖1為本發明一實施例電晶體的操作方法其電晶體的結構示意圖;
圖2A為本發明一實施例電晶體的操作方法之流程圖;
圖2B為本發明另一實施例電晶體的操作方法之流程圖;
圖3為以圖1之第二閘極當作控制閘極之操作下照光與暗態環境之電性示意圖;
圖4為以圖1之第一閘極當作控制閘極之操作下照光與暗態環境之電性示意圖;
圖5為以圖1之第二閘極當作控制閘極之操作下照光與暗態環境之能帶示意圖;
圖6為以圖1之第一閘極當作控制閘極之操作下照光與暗態環境之能帶示意圖;以及
圖7為本發明一實施例電晶體的操作方法其所施加之光源的光譜圖。
S110~120...步驟
Claims (10)
- 一種電晶體的操作方法,適用於一電晶體,該電晶體包含一第一閘極、一第一閘極絕緣層、一半導體主動層、一源極、一汲極、一第二閘極絕緣層以及一第二閘極,其中該第一閘極絕緣層位於該第一閘極上,該半導體主動層位於該第一閘極絕緣層上,該源極與該汲極相互分離地位於該半導體主動層的兩側上,該第二閘極絕緣層位於該半導體主動層上,該第二閘極位於該第二閘極絕緣層上,該電晶體的操作方法,包含:將該第一閘極與該源極接地;以及施加負偏壓至該第二閘極並施加正偏壓至該汲極,在照光環境下,以使該電晶體作為一光偵測器,其中該第二閘極為一透明閘極。
- 如申請專利範圍第1項所述之電晶體的操作方法,其中該第一閘極絕緣層隔絕該第一閘極與該半導體主動層、該源極以及該汲極的接觸。
- 如申請專利範圍第1項所述之電晶體的操作方法,其中該半導體主動層包含金屬氧化物。
- 如申請專利範圍第1項所述之電晶體的操作方法,其中該第二閘極絕緣層隔絕該第二閘極與該半導體主動層、該源極以及該汲極的接觸。
- 如申請專利範圍第1項所述之電晶體的操作方法,其中該第二閘極為氧化銦錫。
- 一種電晶體的操作方法,適用於一電晶體,該電晶體包含一第一閘極、一第一閘極絕緣層、一半導體主動層、一源極、一汲極、一第二閘極絕緣層以及一第二閘極,其中該第一閘極絕緣層位於該第一閘極上,該半導體主動層位於該第一閘極絕緣層上,該源極與該汲極相互分離地位於該半導體主動層的兩側上,該第二閘極絕緣層位於該半導體主動層上,該第二閘極位於該第二閘極絕緣層上,該電晶體的操作方法,包含:將該源極接地,該第二閘極接地或浮接(floating);以及施加偏壓至該第一閘極並施加正偏壓至該汲極,以使該電晶體作為一畫素電晶體。
- 如申請專利範圍第6項所述之電晶體的操作方法,其中該第一閘極絕緣層隔絕該第一閘極與該半導體主動層、該源極以及該汲極的接觸。
- 如申請專利範圍第6項所述之電晶體的操作方法,其中該半導體主動層包含金屬氧化物。
- 如申請專利範圍第6項所述之電晶體的操作方法,其中該第二閘極絕緣層隔絕該第二閘極與該半導體主動層、該源極以及該汲極的接觸。
- 如申請專利範圍第6項所述之電晶體的操作方法,其中該第二閘極為包含氧化銦錫的一透明閘極。
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