CN105565814A - 一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法 - Google Patents

一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法 Download PDF

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CN105565814A
CN105565814A CN201510850763.XA CN201510850763A CN105565814A CN 105565814 A CN105565814 A CN 105565814A CN 201510850763 A CN201510850763 A CN 201510850763A CN 105565814 A CN105565814 A CN 105565814A
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silicon carbide
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ceramics
electrode cutting
polysilicon wire
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李长英
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Shaanxi Jujiehan Chemical Co Ltd
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Shaanxi Jujiehan Chemical Co Ltd
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Abstract

一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法，属于功能材料制备领域。针对目前废料直接丢弃的现象，提供一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法。该方法以多晶硅线切割废料为原料，添加碳化硅粉，经过烧结，得到碳化硅陶瓷。该方法以多晶硅线切割废料为原料，制备过程简单，降低了生产成本。

Description

一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法
技术领域
本发明属于功能材料制备领域，尤其涉及一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法。
背景技术
随着国际社会对太阳能光伏产业投入的不断增加，太阳能用多晶硅生产进入了高速发展时期。数据表明近几年来全球太阳能级多晶硅每年以40％～50％的增长率迅猛发展酬。我国是太阳能光伏产业发展最快的国家之一，据统计在2007-2009年间共有17个省市规划了35个大型多晶硅项目，初步统计产能已超过5.5万吨，预计到2011年中国的光伏多晶硅产量将占世界总产量的34％左右。
在光伏多晶硅的生产过程中，需要将高纯的晶体硅锭切割成硅片。一般以碳化硅为切割磨料，采用线切割方式进行加工。切割时硅锭中约44％-52％的晶体硅被切磨成硅粉，与碳化硅磨料以及切割液共同形成切割料浆。当前对于切割料浆的回收利用一般仅限于其中的切割液和碳化硅磨料，而对于料浆中高纯硅的回收方法尚未成熟。因此切割料浆经回收后的残渣中含有大量硅粉、未分离彻底的碳化硅磨料以及因缺乏磨削能力而丢弃的碳化硅颗粒，该部分残渣由于缺乏利用价值而往往作为工业废料直接丢弃。
发明内容
本发明的目的是提供一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法。
本发明通过以下技术方案予以实现：一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法，包括如下步骤：将碳化硅与切割废料以质量比1:9的比例混合后，放入树脂球磨罐中球磨混料，球磨时间为15min。将混合料过40目筛网进行造粒、陈腐后，置于模具中于10Mpa压力下成型，然后放入真空炉内烧制，其烧成过程为：以2℃／min升温至300℃并保温30min，再以3℃／min升温至1420℃并保温10min，最后以5℃／min降温至1000℃再关闭电炉电源使其自然冷却至室，得到碳化硅陶瓷。
本发明具有如下有益效果：
该方法以多晶硅线切割废料为原料，制备过程简单，降低了生产成本。
具体实施方式
下面结合具体实施例对本发明做进一步说明。
具体实施例：将碳化硅与切割废料以质量比1:9的比例混合后，放入树脂球磨罐中球磨混料，球磨时间为15min。将混合料过40目筛网进行造粒、陈腐后，置于模具中于10Mpa压力下成型，然后放入真空炉内烧制，其烧成过程为：以2℃／min升温至300℃并保温30min，再以3℃／min升温至1420℃并保温10min，最后以5℃／min降温至1000℃再关闭电炉电源使其自然冷却至室，得到碳化硅陶瓷。
该方法以多晶硅线切割废料为原料，制备过程简单，降低了生产成本。
以上内容是结合具体的实施方式对本发明所做的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。

Claims (1)

1.一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法，其特征在于包括如下步骤：将碳化硅与切割废料以质量比1:9的比例混合后，放入树脂球磨罐中球磨混料，球磨时间为15min,将混合料过40目筛网进行造粒、陈腐后，置于模具中于10Mpa压力下成型，然后放入真空炉内烧制，其烧成过程为：以2℃／min升温至300℃并保温30min，再以3℃／min升温至1420℃并保温10min，最后以5℃／min降温至1000℃再关闭电炉电源使其自然冷却至室，得到碳化硅陶瓷。
CN201510850763.XA 2015-11-30 2015-11-30 一种以多晶硅线切割废料为原料制备碳化硅陶瓷的方法 Pending CN105565814A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109650915A (zh) * 2019-01-05 2019-04-19 无锡尚臻新材料有限公司 一种氮化硅结合碳化硅匣钵及制备方法
CN109721364A (zh) * 2019-01-05 2019-05-07 无锡尚臻新材料有限公司 氮化硅-碳化硅-刚玉匣钵及制备方法
CN114394844A (zh) * 2021-12-28 2022-04-26 华中科技大学 一种废料3d打印制备碳化硅陶瓷的方法及碳化硅陶瓷

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109650915A (zh) * 2019-01-05 2019-04-19 无锡尚臻新材料有限公司 一种氮化硅结合碳化硅匣钵及制备方法
CN109721364A (zh) * 2019-01-05 2019-05-07 无锡尚臻新材料有限公司 氮化硅-碳化硅-刚玉匣钵及制备方法
CN109650915B (zh) * 2019-01-05 2022-03-29 无锡尚臻新材料有限公司 一种氮化硅结合碳化硅匣钵及制备方法
CN114394844A (zh) * 2021-12-28 2022-04-26 华中科技大学 一种废料3d打印制备碳化硅陶瓷的方法及碳化硅陶瓷

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