CN105556672B - 透镜阵列及其制造方法、固态成像设备和电子设备 - Google Patents

透镜阵列及其制造方法、固态成像设备和电子设备 Download PDF

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Publication number
CN105556672B
CN105556672B CN201480051607.0A CN201480051607A CN105556672B CN 105556672 B CN105556672 B CN 105556672B CN 201480051607 A CN201480051607 A CN 201480051607A CN 105556672 B CN105556672 B CN 105556672B
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curvature
radius
pixel
lens
microlens
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Expired - Fee Related
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Chinese (zh)
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CN105556672A (zh
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大塚洋一
西木户健树
葭叶一平
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Sony Corp
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Sony Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0025—Machining, e.g. grinding, polishing, diamond turning, manufacturing of mould parts
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B13/00—Viewfinders; Focusing aids for cameras; Means for focusing for cameras; Autofocus systems for cameras
    • G03B13/32—Means for focusing
    • G03B13/34—Power focusing
    • G03B13/36—Autofocus systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201480051607.0A 2013-09-25 2014-09-12 透镜阵列及其制造方法、固态成像设备和电子设备 Expired - Fee Related CN105556672B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013197861A JP2015065268A (ja) 2013-09-25 2013-09-25 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器
JP2013-197861 2013-09-25
PCT/JP2014/074244 WO2015045914A1 (ja) 2013-09-25 2014-09-12 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器

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CN105556672A CN105556672A (zh) 2016-05-04
CN105556672B true CN105556672B (zh) 2019-11-12

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Country Status (6)

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US (1) US10088608B2 (enExample)
JP (1) JP2015065268A (enExample)
KR (2) KR20210062722A (enExample)
CN (1) CN105556672B (enExample)
TW (1) TWI651563B (enExample)
WO (1) WO2015045914A1 (enExample)

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JP2016058451A (ja) * 2014-09-05 2016-04-21 キヤノン株式会社 センサおよびカメラ
CN105140250A (zh) * 2015-06-30 2015-12-09 京东方科技集团股份有限公司 光电转换阵列基板及其制作方法、光电转换装置
JP6600246B2 (ja) * 2015-12-17 2019-10-30 キヤノン株式会社 撮像装置及びカメラ
JP6656720B2 (ja) * 2016-01-07 2020-03-04 株式会社ジャパンディスプレイ 電極の作製方法、および電極を備える表示装置の作製方法
CN106324727B (zh) * 2016-11-03 2017-12-12 山东师范大学 自聚焦微透镜阵列的制作系统及制作方法
US11024651B2 (en) * 2017-01-20 2021-06-01 Sony Semiconductor Solutions Corporation Display device and electronic device with microlens array and light emitting element substrates bonded by adhesive layer
CN107040724B (zh) 2017-04-28 2020-05-15 Oppo广东移动通信有限公司 双核对焦图像传感器及其对焦控制方法和成像装置
US20210233951A1 (en) * 2018-05-16 2021-07-29 Sony Semiconductor Solutions Corporation Solid-state imaging device and method of manufacturing solid-state imaging device
US10880467B2 (en) * 2018-06-25 2020-12-29 Omnivision Technologies, Inc. Image sensors with phase detection auto-focus pixels
US10608039B1 (en) * 2018-10-02 2020-03-31 Foveon, Inc. Imaging arrays having focal plane phase detecting pixel sensors
KR102723593B1 (ko) * 2018-12-27 2024-10-30 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 소자 및 촬상 소자의 제조 방법
JP7561514B2 (ja) * 2019-04-15 2024-10-04 キヤノン株式会社 撮像素子及び撮像装置
CN117572545A (zh) 2019-04-15 2024-02-20 佳能株式会社 图像传感器和摄像设备
WO2021039955A1 (ja) * 2019-08-30 2021-03-04 凸版印刷株式会社 光電変換素子、撮像素子、および撮像システム
KR20220036630A (ko) * 2020-09-16 2022-03-23 삼성전자주식회사 컬러 보정을 위한 영상 처리 장치, 영상 처리 방법 및 이를 포함하는 영상 처리 시스템
KR20220043556A (ko) * 2020-09-29 2022-04-05 에스케이하이닉스 주식회사 이미지 센싱 장치
US11569291B2 (en) * 2020-11-05 2023-01-31 Visera Technologies Company Limited Image sensor and method forming the same
JP7637162B2 (ja) * 2021-02-02 2025-02-27 株式会社ジャパンディスプレイ 検出装置及び検出装置の製造方法
KR20220152484A (ko) * 2021-05-07 2022-11-16 삼성전자주식회사 이미지 센서
JP7786062B2 (ja) * 2021-07-21 2025-12-16 Ｔｏｐｐａｎホールディングス株式会社 固体撮像素子
KR20230056858A (ko) 2021-10-20 2023-04-28 삼성전자주식회사 이미지 센서
FR3135330B1 (fr) * 2022-05-05 2025-11-07 St Microelectronics Crolles 2 Sas Procédé de fabrication de microlentilles
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Also Published As

Publication number Publication date
CN105556672A (zh) 2016-05-04
WO2015045914A1 (ja) 2015-04-02
TW201512732A (zh) 2015-04-01
US10088608B2 (en) 2018-10-02
KR20160061999A (ko) 2016-06-01
KR20210062722A (ko) 2021-05-31
KR102258268B1 (ko) 2021-06-01
TWI651563B (zh) 2019-02-21
US20160231468A1 (en) 2016-08-11
JP2015065268A (ja) 2015-04-09

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