CN105552497A - Space coupling low-intermodulation attenuator - Google Patents
Space coupling low-intermodulation attenuator Download PDFInfo
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- CN105552497A CN105552497A CN201511007153.XA CN201511007153A CN105552497A CN 105552497 A CN105552497 A CN 105552497A CN 201511007153 A CN201511007153 A CN 201511007153A CN 105552497 A CN105552497 A CN 105552497A
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- conduction band
- substrate
- attenuator
- input
- space coupling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/22—Attenuating devices
- H01P1/227—Strip line attenuators
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Abstract
The invention discloses a space coupling low-intermodulation attenuator. The space coupling intermodulation attenuator comprises an input conduction band, an output conduction band, a coupling resistor and an absorption resistor, wherein the input conduction band is printed on the front surface of a substrate, a grounding conduction surface is printed on the back surface of the substrate, the substrate is a square beryllium oxide or aluminum nitride ceramic plate, installation holes are uniformly formed around the substrate, the absorption resistor is printed at a terminal of the input conduction band, the coupling resistor is printed at an initial point of the output conductive band, and the coupling resistor and the absorption resistor are connected by a side conductive band and the grounding conduction surface. The space coupling low-intermodualtion attenuator disclosed by the invention has the advantages of high transmission power, high low-intermodulation performance and index stability.
Description
Technical field
The present invention relates to the low intermodulation attenuator of a kind of Space Coupling.
Background technology
At present, for conventional attenuator design as seen in figs. 2a-2b, on the both sides of substrate (1) printing ground connection conduction band (10), at center line printing center conduction band (12) of substrate (1), damping resistance (11) is printed as seen in figs. 2a-2b between ground connection conduction band (10), center conduction band (14), at two ends printing end electrode (13) of substrate (1), the decay of the T-shaped or Π type circuit realiration signal of signal in damping resistance (11); The advantage of this kind of scheme is that structure is simple, easy to install.Its shortcoming is mainly manifested in: one, power is little, the attenuator load power of this kind of structure is limited in one's ability, because this kind of attenuator is suspension type attenuator, the part mainly relying on the ground connection conduction band on both sides to contact with cavity during use is grounded connection and the delivered heat of signal, because contact area is too small, heat transfer efficiency extreme difference, its maximum power is usually limited within 100W; Two, intermodulation index error, central guiding band portion due to this kind of attenuator circuit is attenuated resistance isolates, the decay of signal mainly relies on the absorption of attenuator circuit to carry out realizing, due to the mode that this kind of scheme damped manner is directly decay, cause the intermodulation index extreme difference of attenuator, its third order intermodulation seldom can realize≤-120dBc2*43dBm; Three, poor stability, when attenuator uses, the Elastic Contact folder relying on inside cavity setting contacts with the ground connection conduction band on attenuator both sides, contact area is too small, and the contact of the center conduction band of this attenuator is also rely on the Elastic Contact of termination electrode to realize, therefore the attenuator of the program is after vibrations, often occurs the phenomenon that index is bad.
Summary of the invention:
For overcoming the defect of prior art, the object of the present invention is to provide the low intermodulation attenuator of a kind of Space Coupling, is the low intermodulation attenuator of good, that index the is stable Space Coupling of large, the low intermodulation performance of a kind of through-put power.
Technical solution problem of the present invention adopts following technical scheme:
The low intermodulation attenuator of a kind of Space Coupling, comprising:
Substrate, input conduction band, output conduction band, absorption resistance are connected with ground connection conducting surface through lateral electrode conduction band by common electrode conduction band with coupling resistance;
It is characterized in that:
Described input conduction band, export non-between the end face of conduction band and the end face of substrate flushing, but have certain for limit;
Non-ly between four limits of described ground connection conducting surface and four limit end faces of substrate to flush, but exist certain for limit;
Described input conduction band is provided with resistance with the wherein one end exporting conduction band, but the setting of input conductive terminal is absorption resistance, and power can realize 300W, and what output conduction band one end was arranged is coupling resistance, and power, at 30W, all adopts thick film screen printing and sintering process;
Described absorption resistance and coupling resistance are grounded by common electrode conduction band;
The all Signal transmissions of the attenuator of described Space Coupling, decay, absorption all realize on same substrate;
Described being input between conduction band and output conduction band forms signal absorption and decay by the mode of Space Coupling, processes, by controlling the degree of decay from limit L between two conduction bands to signal;
Described installing hole is distributed in the periphery of substrate.
Compared with the prior art, beneficial effect of the present invention is embodied in:
The low intermodulation attenuator of Space Coupling of the present invention, be that the unconventional T-shaped or Π type circuit realiration of its damped manner is directly decayed, but decayed by Space Coupling, contactless damped manner, due to this kind of mode non-immediate decay, therefore the attenuator of this kind of scheme can realize low intermodulation performance, and its intermodulation index can realize≤-150dBc2*43dBm; Chip area of the present invention is comparatively large, and the present invention is directly installed in the plane of cavity when installing, and unconventional suspension type is installed, and efficiently radiates heat area is large, and its power-carrying is large, can realize the load power of 300W; Attenuator index of the present invention is stablized, be that its ground connection conducting surface entirety contacts with cavity face, ensure that there is sufficient electrical contact face between the two, and use screw to connect in succession with being fixed realization by installing hole between cavity and attenuator, input conduction band, output conduction band connected mode are welded type, non-conventional welds formula, therefore the present invention has better stability, and the useful life of product is improved greatly.
Accompanying drawing illustrates:
Figure 1A is overall structure schematic diagram of the present invention; Figure 1B is side-looking structural representation of the present invention; Fig. 1 C is that the present invention looks up structural representation; Fig. 2 A is conventional attenuator overall structure schematic diagram; Fig. 2 B is conventional attenuator side-looking structural representation;
Number in the figure: 1 substrate, 101 installing holes, 2 input conduction bands, 3 export conduction band, 4 absorption resistances, the secondary bar of 3 signals, 4 locating pieces, 5 coupling resistances, 6 common electrode conduction bands, 61 lateral electrode conduction bands, 7 ground connection conducting surfaces, 8 from limit, 9 from limit L, 10 ground connection conduction bands, 11 damping resistances, 12 center conduction bands, 13 termination electrodes;
Below by way of embodiment, and the invention will be further described by reference to the accompanying drawings.
Embodiment:
Embodiment: in conjunction with Figure 1A-Fig. 1 C, the low intermodulation attenuator of Space Coupling of the present embodiment, comprising:
Use the substrate 1 of beryllium oxide or aluminium nitride high temperature process, installing hole 101 is set at the periphery of substrate 1, so that the installation of attenuator of the present invention, fixing;
Substrate adopts printing, the input conduction band 2 of sintering process making, output conduction band 3, absorption resistance 4, coupling resistance 5 and common electrode conduction band 6, and its acting in conjunction, realizes the decay to signal and low intermodulation performance;
Input conduction band 2 is connected with absorption resistance 4, and input conduction band 3 is connected with coupling resistance 5, is connected with ground connection conduction band face 7 through common electrode conduction band 6, lateral electrode conduction band 61;
Be input to conduction band 2 and export between conduction band 3 and form signal absorption and decay by the mode of Space Coupling, signal is processed, by the spacing L9 between two conduction bands, the degree of decay is controlled;
In concrete enforcement, use accurate automatic screen printing machine on the substrate 1 according to corresponding size graphic printing electrocondution slurry, after the temperature of 300 DEG C are dried, sinter through the high temperature of 850 DEG C; Secondly printing absorption resistance 4 and coupling resistance 5, same needs carries out drying and sinters; Signal is after input conduction band 2 enters attenuator, Space Coupling can be formed voluntarily with output conduction band 3, unnecessary resistance above input conduction band 2 can absorb by absorption resistance 4, in like manner, the coupled end signal exporting conduction band 3 can absorb by coupling resistance 5, signal after carrying out space, can export through exporting conduction band 3, realize the decay of signal, because between input conduction band 2 and output conduction band 3, unconventional direct-type decays, but a kind of Space Coupling formula decay, therefore can realize the low intermodulation performance of this attenuator;
During assembling, by in this attenuator horizontal positioned and cavity, trip bolt is used to be fixed on cavity by the installing hole 101 on substrate 1 by substrate 1, again the connector of input and output is installed on cavity, finally the inner wire of connector is welded respectively and input conduction band and export on conduction band, the assembling of the low intermodulation attenuator of a kind of Space Coupling can be completed.
Claims (5)
1. the low intermodulation attenuator of Space Coupling, comprising:
Substrate (1), input conduction band (2), output conduction band (3), absorption resistance (4) are connected with ground connection conducting surface (7) through lateral electrode conduction band (61) by common electrode conduction band (6) with coupling resistance (5);
It is characterized in that:
Non-ly between the input of described input conduction band (2) and the end face of substrate (1) to flush, but exist certain for limit (8);
Non-ly between the output of described output conduction band (3) and the end face of substrate (1) to flush, but exist certain for limit (8);
Non-ly between four limits of described ground connection conducting surface (7) and four limit end faces of substrate (1) to flush, but exist certain for limit (8);
Described is 0.3-0.5mm from limit (8).
2. the low intermodulation attenuator of a kind of Space Coupling according to claim 1, is characterized in that, described substrate (1) is square beryllium oxide or alumina ceramic plate, the uniform installing hole of its periphery (101).
3. the low intermodulation attenuator of a kind of Space Coupling according to claim 1, it is characterized in that, described input conduction band (2) is the silver conduction band of transition line formula, for adopting thick film screen printing, sintering process processing in the front of substrate (1), initiating terminal is positioned at one end of substrate (1), have absorption resistance (4) in the terminal of input conduction band, in like manner absorption resistance (4) adopts thick film screen printing, sintering process processes the front with substrate (1).
4. the low intermodulation attenuator of a kind of Space Coupling according to claim 1, is characterized in that, described output conduction band (3) is the silver conduction band of hollow, and the initiating terminal wherein exporting conduction band (3) has coupling resistance (5), and terminal is positioned at the other end of substrate (1).
5. the low intermodulation attenuator of a kind of Space Coupling according to claim 1, it is characterized in that, described being input between conduction band (2) and output conduction band (3) forms signal absorption and decay by the mode of Space Coupling, signal is processed, spacing L(9 by between two conduction bands) degree of decay is controlled, and unconventional T-shaped or Π type circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511007153.XA CN105552497A (en) | 2015-12-30 | 2015-12-30 | Space coupling low-intermodulation attenuator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511007153.XA CN105552497A (en) | 2015-12-30 | 2015-12-30 | Space coupling low-intermodulation attenuator |
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| Publication Number | Publication Date |
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| CN105552497A true CN105552497A (en) | 2016-05-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201511007153.XA Pending CN105552497A (en) | 2015-12-30 | 2015-12-30 | Space coupling low-intermodulation attenuator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628260A (en) * | 2020-06-28 | 2020-09-04 | 中国电子科技集团公司第二十研究所 | Power distribution network with high power capacity |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU593273A1 (en) * | 1974-04-26 | 1978-02-15 | Томский Институт Автоматизированных Систем Управления И Радиоэлектроники | Controlled attenuator |
| CN202940315U (en) * | 2012-11-29 | 2013-05-15 | 合肥威科电子技术有限公司 | Broadband directional low-intermodulation attenuator |
| CN203503766U (en) * | 2013-09-26 | 2014-03-26 | 世达普(苏州)通信设备有限公司 | Large-power attenuator with broad band and low cross-modulation |
| CN103928733A (en) * | 2014-04-29 | 2014-07-16 | 苏州灿勤通讯技术有限公司 | Attenuator |
| CN204834820U (en) * | 2015-08-28 | 2015-12-02 | 南京牧夫电子科技有限公司 | 2. 4GHz high isolation directional coupler |
-
2015
- 2015-12-30 CN CN201511007153.XA patent/CN105552497A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU593273A1 (en) * | 1974-04-26 | 1978-02-15 | Томский Институт Автоматизированных Систем Управления И Радиоэлектроники | Controlled attenuator |
| CN202940315U (en) * | 2012-11-29 | 2013-05-15 | 合肥威科电子技术有限公司 | Broadband directional low-intermodulation attenuator |
| CN203503766U (en) * | 2013-09-26 | 2014-03-26 | 世达普(苏州)通信设备有限公司 | Large-power attenuator with broad band and low cross-modulation |
| CN103928733A (en) * | 2014-04-29 | 2014-07-16 | 苏州灿勤通讯技术有限公司 | Attenuator |
| CN204834820U (en) * | 2015-08-28 | 2015-12-02 | 南京牧夫电子科技有限公司 | 2. 4GHz high isolation directional coupler |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628260A (en) * | 2020-06-28 | 2020-09-04 | 中国电子科技集团公司第二十研究所 | Power distribution network with high power capacity |
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Application publication date: 20160504 |