CN105531814A - 开关元件、半导体装置、半导体装置的制造方法 - Google Patents
开关元件、半导体装置、半导体装置的制造方法 Download PDFInfo
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Abstract
本发明涉及的开关元件的特征在于,具有:衬底;第1栅极焊盘,其形成在该衬底;第2栅极焊盘,其形成在该衬底;第1电阻部,其形成在该衬底,将该第1栅极焊盘与该第2栅极焊盘连接;以及单元区域,其形成在该衬底,与该第1栅极焊盘连接。由此,在完成栅极电阻内置型的开关元件之后,能够进行该开关元件的栅极电阻值的测量和栅极电阻的选择。
Description
技术领域
本发明涉及一种利用来自外部的控制信号切换电流的导通和截止的开关元件、具有该开关元件的半导体装置以及该半导体装置的制造方法。
背景技术
在专利文献1中,公开了一种内置有栅极电阻的开关元件。该开关元件在栅极焊盘部之下具有多个电阻区域。并且,在晶圆工艺的最终工序将多个电阻区域与栅极适当地连接,得到所希望的栅极电阻。
专利文献1:日本特开平3-179779号公报
发明内容
有时将多个开关元件并联连接而制造额定电流为几十~几千安培的半导体装置。在这种半导体装置中,如果开关元件的栅极电阻发生波动,则通断速度及导通电流值也会波动。这成为振荡或者开关元件劣化的原因。因而,优选以能够对栅极电阻值符合标准这一状况进行确认的方式构成栅极电阻内置型的开关元件。
关于上述的半导体装置,如果额定电流大则开关元件的并联搭载数增加,如果额定电流小则开关元件的并联搭载数减少。并且,如果开关元件的并联搭载数改变,则用于抑制栅极振荡、减小控制信号的失衡的栅极电阻值最优值改变。因此,优选能够在完成栅极电阻内置型的开关元件之后对栅极电阻进行选择,使开关元件应对多个品种。
本发明就是为了解决上述的问题而提出的,目的在于提供一种在完成栅极电阻内置型的开关元件之后能够进行栅极电阻值的测量和栅极电阻的选择的开关元件、具有该开关元件的半导体装置以及具有该开关元件的半导体装置的制造方法。
本发明涉及的开关元件的特征在于,具有:衬底;第1栅极焊盘,其形成在该衬底;第2栅极焊盘,其形成在该衬底;第1电阻部,其形成在该衬底,将该第1栅极焊盘与该第2栅极焊盘连接;以及单元区域,其形成在该衬底,与该第1栅极焊盘连接。
本发明涉及的半导体装置的特征在于,具有第1开关元件、第2开关元件以及对控制信号进行供给的导线,该第1开关元件具有:衬底;第1栅极焊盘,其形成在该衬底;第2栅极焊盘,其形成在该衬底;第1电阻部,其形成在该衬底,将该第1栅极焊盘与该第2栅极焊盘连接;以及单元区域,其形成在该衬底,与该第1栅极焊盘连接,该第2开关元件具有与该第1开关元件相同的构造,与该第1开关元件并联连接,该导线与该第1开关元件的该第1栅极焊盘以及该第2开关元件的第1栅极焊盘连接,或者与该第1开关元件的该第2栅极焊盘以及该第2开关元件的第2栅极焊盘连接。
本发明涉及的半导体装置的制造方法的特征在于,具有:制造开关元件的工序,该开关元件具有衬底、第1栅极焊盘、第2栅极焊盘、第1电阻部以及单元区域,该第1栅极焊盘形成在该衬底,该第2栅极焊盘形成在该衬底,该第1电阻部形成在该衬底,将该第1栅极焊盘与该第2栅极焊盘连接,该单元区域形成在该衬底,与该第1栅极焊盘连接;使探针触碰该第1栅极焊盘和该第2栅极焊盘而测量该第1电阻部的电阻值的工序;以及在该电阻值符合标准的情况下将该开关元件搭载至模块的工序。
本发明的其他特征在下面得以明确。
发明的效果
根据本发明,在完成栅极电阻内置型的开关元件之后,能够进行栅极电阻值的测量和栅极电阻的选择。
附图说明
图1是示意性地表示本发明的实施方式1涉及的开关元件的俯视图。
图2是表示固定在第2栅极焊盘的铝线的俯视图。
图3是表示固定在第1栅极焊盘的铝线的俯视图。
图4是变形例涉及的开关元件的俯视图。
图5是作为连接部而具有电阻部分的开关元件的俯视图。
图6是本发明的实施方式2涉及的开关元件的俯视图。
图7是本发明的实施方式3涉及的开关元件的俯视图。
图8是本发明的实施方式4涉及的开关元件的俯视图。
图9是本发明的实施方式5涉及的开关元件的俯视图。
图10是本发明的实施方式6涉及的半导体装置的电路图。
具体实施方式
参照附图,对本发明的实施方式涉及的开关元件、半导体装置以及半导体装置的制造方法进行说明。对相同或相应的结构要素标注相同的标号,有时省略重复的说明。
实施方式1.
图1是示意性地表示本发明的实施方式1涉及的开关元件10的俯视图。开关元件10是IGBT。开关元件10具有衬底11。在衬底11形成有第1栅极焊盘12和第2栅极焊盘14。在衬底11形成有将第1栅极焊盘12与第2栅极焊盘14连接的第1电阻部16。第1电阻部16是内置于开关元件10的栅极电阻。第1电阻部16具有通过晶圆工艺形成的高电阻层。有时将内置于开关元件的栅极电阻称为片上(on-chip)电阻。此外,在附图中,第1电阻部16由电路符号表示。
在衬底11形成有单元区域18。单元区域18具有接收控制信号的栅极配线部。单元区域18的栅极配线部通过配线20而与第1栅极焊盘12连接。
下面,对本发明的实施方式1涉及的半导体装置的制造方法进行说明。首先,利用晶圆工艺制造开关元件10。接着,使探针(测量用端子)触碰第1栅极焊盘12和第2栅极焊盘14,测量第1电阻部16的电阻值。接着,在该电阻值符合标准的情况下,将开关元件10搭载至模块。然后,将栅极配线所用的、传送来自外部的控制信号的铝线固定在第1栅极焊盘12或者第2栅极焊盘14。此外,也可以不是铝线,而是使用其他具有导电性的导线。
此外,在第1电阻部16的电阻值不符合标准的情况下,不将开关元件10搭载至模块,而是将开关元件10废弃。因此,与在开关元件10的搭载后发现第1电阻部16的电阻值不符合标准而将半导体装置整体废弃的情况相比,能够降低损失额。
由于第1电阻部16是通过晶圆工艺而形成的,因此不能避免以工艺条件的波动为原因的电阻值的波动。因而,需要对第1电阻部16的电阻值符合标准这一状况进行确认。根据本发明的实施方式1涉及的开关元件10,通过使探针接触第1栅极焊盘12和第2栅极焊盘14这两者,能够测量第1电阻部16的电阻值。因此,能够对第1电阻部16的电阻值符合标准这一状况进行确认。
特别地,在半导体装置内并联连接多个开关元件的情况下,通过如上述那样对电阻值(栅极电阻值)符合标准这一状况进行确认,能够抑制开关元件间的电阻值的波动。因而,电流不会集中至多个开关元件的某一个或某几个,能够使半导体装置稳定动作。另外,在半导体装置内的开关元件的并联数多的情况、或使半导体装置以高频进行通断的情况等之下,需要使半导体装置内的各开关元件的栅极电阻值高精度地一致。这种情况下,优选根据如上述那样测量出的各元件的栅极电阻值,选出具有所希望范围内的栅极电阻值的开关元件,将它们搭载至1个半导体装置。即,制造多个开关元件,对它们进行电阻值的测量,选出多个开关元件之中电阻值处于所希望范围内的开关元件,将所选出的开关元件搭载至1个半导体装置。由此,能够高效率地得到高性能的半导体装置。
并且,能够选择将铝线固定在第1栅极焊盘12与第2栅极焊盘14的哪一个,其中,该铝线用于传送来自外部的控制信号。图2是表示固定在第2栅极焊盘14的铝线22的俯视图。通过将铝线22与第2栅极焊盘14连接,能够将第1电阻部16作为片上电阻而使用。图3是表示固定在第1栅极焊盘12的铝线24的俯视图。在已将铝线24与第1栅极焊盘12连接时能够构成无片上电阻的开关元件。
由此,由于能够在完成开关元件10之后对栅极电阻进行选择,因此能够使开关元件10应对多个品种。即,通过适当选择栅极电阻,能够将开关元件10利用于并联搭载数不同的多个品种。因而,能够使制造管理简化,提高生产性。
图4是变形例涉及的开关元件的俯视图。第1栅极焊盘26形成在单元区域18内。具体地说,第1栅极焊盘26形成在单元区域18的角部。优选第1栅极焊盘26设置在单元区域18的栅极配线部的正上方。
在第1栅极焊盘12位于单元区域18的外侧的情况下,需要将第1栅极焊盘12与单元区域18连接的连接部。在图1的开关元件10中,作为连接部而使用了配线20。然而,也可以作为连接部而形成电阻部分。图5是作为连接部而具有电阻部分40的开关元件的俯视图。连接部由电阻部分40形成。这种情况下,通过将铝线固定在第1栅极焊盘12,从而能够将电阻部分40作为片上电阻而使用。如果将铝线固定在第2栅极焊盘14,则能够将第1电阻部16和电阻部分40的串联电阻作为片上电阻而使用。
开关元件10不限定于IGBT。例如也可以由功率MOSFET形成开关元件。衬底11也可以由宽带隙半导体形成。作为宽带隙半导体,存在碳化硅、氮化镓类材料或者金刚石。在高速通断用途中,有时利用宽带隙半导体形成开关元件。这种情况下,通过利用上述的方法对多个开关元件的栅极电阻值一致这一状况进行确认,能够使半导体装置稳定动作。此外,这些变形也能够应用于以下的实施方式涉及的开关元件、半导体装置以及半导体装置的制造方法。
实施方式2.
由于本发明的实施方式2涉及的开关元件、半导体装置以及半导体装置的制造方法与实施方式1共通点多,因此以与实施方式1的不同点为中心进行说明。图6是本发明的实施方式2涉及的开关元件30的俯视图。开关元件30具有形成在衬底11的第3栅极焊盘32。第2栅极焊盘14与第3栅极焊盘32通过形成在衬底11的第2电阻部34而连接。
对本发明的实施方式2涉及的半导体装置的制造方法进行说明。首先,制造开关元件30。接着,使探针触碰第1栅极焊盘12和第2栅极焊盘14,测量第1电阻部16的电阻值。接着,使探针触碰第2栅极焊盘14和第3栅极焊盘32,测量第2电阻部34的电阻值。接着,使探针触碰第1栅极焊盘12和第3栅极焊盘32,测量第1电阻部16和第2电阻部34的串联电阻值。
接着,在测量出的3个电阻值符合标准的情况下,将开关元件30搭载至模块。然后,将铝线固定在第1栅极焊盘12、第2栅极焊盘14或者第3栅极焊盘32的任意者。
在这里,将第1电阻部16的电阻值设为R1,将第2电阻部34的电阻值设为R2。在已将铝线固定在第3栅极焊盘32时,能够将第2电阻部34和第1电阻部16作为片上电阻而使用。这时的栅极电阻值为R1+R2。在已将铝线固定在第2栅极焊盘14时,能够将第1电阻部16作为片上电阻而使用。这时的栅极电阻值为R1。在已将铝线固定在第1栅极焊盘12时,能够构成无片上电阻的开关元件。由此,能够从3种栅极电阻值之中选择所希望的栅极电阻值。
在本发明的实施方式2中,使探针触碰栅极焊盘而测量了3个电阻值(第1电阻部16的电阻值、第2电阻部34的电阻值、第1电阻部16和第2电阻部34的串联电阻值)。然而,例如,在预先已知将铝线固定在第2栅极焊盘14的情况下,能够仅测量第1电阻部16的电阻值,省略其他的测量。在以下的实施方式中,也可以对预先已知不会使用的电阻部省略电阻值的测量。
实施方式3.
由于本发明的实施方式3涉及的开关元件、半导体装置以及半导体装置的制造方法与实施方式1共通点多,因此以与实施方式1的不同点为中心进行说明。图7是本发明的实施方式3涉及的开关元件50的俯视图。开关元件50具有形成在衬底11的第1附加栅极焊盘52。第1附加栅极焊盘52与第1栅极焊盘12通过形成在衬底11的第1附加电阻部54而连接。
对本发明的实施方式3涉及的半导体装置的制造方法进行说明。首先,制造开关元件50。接着,使探针触碰第1栅极焊盘12和第2栅极焊盘14,测量第1电阻部16的电阻值。接着,使探针触碰第1栅极焊盘12和第1附加栅极焊盘52,测量第1附加电阻部54的电阻值。然后,使探针触碰第1栅极焊盘12、第2栅极焊盘14以及第1附加栅极焊盘52,测量第1电阻部16和第1附加电阻部54的并联电阻值。
接着,在上述3个电阻值符合标准的情况下,将开关元件50搭载至模块。然后,将铝线固定在第1栅极焊盘12、第2栅极焊盘14、第1附加栅极焊盘52、或者第2栅极焊盘14和第1附加栅极焊盘52这两者。
在这里,将第1电阻部16的电阻值设为R1,将第1附加电阻部54的电阻值设为RA1。在已将铝线固定在第2栅极焊盘14时,能够将第1电阻部16作为片上电阻而使用。这时的栅极电阻值为R1。在已将铝线固定在第1附加栅极焊盘52时,能够将第1附加电阻部54作为片上电阻而使用。这时的栅极电阻值为RA1。在已将铝线固定在第1栅极焊盘12时能够构成无片上电阻的开关元件。
在已将铝线固定在第2栅极焊盘14和第1附加栅极焊盘52这两者时,能够将并联连接的第1电阻部16和第1附加电阻部54作为片上电阻而使用。这时的栅极电阻值为(R1×RA1)/(R1+RA1)。由此,仅通过选择铝线的连接方法,就能够从4种栅极电阻值之中选择所希望的栅极电阻值。
实施方式4.
由于本发明的实施方式4涉及的开关元件、半导体装置以及半导体装置的制造方法与实施方式3共通点多,因此以与实施方式3的不同点为中心进行说明。图8是本发明的实施方式4涉及的开关元件56的俯视图。开关元件56具有形成在衬底11的第2附加栅极焊盘60。第2附加栅极焊盘60与第1附加栅极焊盘52通过形成在衬底11的第2附加电阻部62而连接。
在实施方式3中进行了说明的开关元件能够提供4种栅极电阻值,但实施方式4涉及的开关元件56除了这4种栅极电阻值之外,还能够提供5种栅极电阻值。如果将第2电阻部34的电阻值设为R2,将第2附加电阻部62的电阻值设为RA2,则新的5种栅极电阻值如下所述。
第1,在将铝线固定在第3栅极焊盘32的情况下,栅极电阻值为R1+R2。第2,在将铝线固定在第2附加栅极焊盘60的情况下,栅极电阻值为RA1+RA2。第3,在将铝线固定在第3栅极焊盘32和第2附加栅极焊盘60的情况下,栅极电阻值为((R2+R1)×(RA2+RA1))/((R2+R1)+(RA2+RA1))。
第4,在将铝线固定在第3栅极焊盘32和第1附加栅极焊盘52的情况下,栅极电阻值为((R2+R1)×RA1)/((R2+R1)+RA1)。第5,在将铝线固定在第2栅极焊盘14和第2附加栅极焊盘60的情况下,栅极电阻值为(R1×(RA2+RA1))/(R1+(RA2+RA1))。
在本发明的实施方式4涉及的半导体装置的制造方法中,在完成开关元件56之后,对上述9种电阻值进行测量。接着,在上述9种电阻值符合标准的情况下,将开关元件56搭载至模块。然后,将铝线固定于焊盘以实现9种电阻值的任意者。由此,仅通过选择铝线的连接方法,就能够从9种栅极电阻值之中选择所希望的栅极电阻值。
实施方式5.
以与实施方式2的不同点为中心,对本发明的实施方式5涉及的开关元件、半导体装置以及半导体装置的制造方法进行说明。图9是本发明的实施方式5涉及的开关元件70的俯视图。开关元件70的特征在于,包含第1栅极焊盘12以及第2栅极焊盘14的多个栅极焊盘以包围单元区域18的方式形成。
开关元件70在俯视观察时为具有第1边11a、第2边11b、第3边11c以及第4边11d的四边形。沿第1边11a形成有第1-第3栅极焊盘12、14、32。沿第2边11b形成有第4-第6栅极焊盘72、74、76。沿第3边11c形成有第7-第9栅极焊盘78、80、82。沿第4边11d形成有第10-第12栅极焊盘84、86、88。
相邻的2个栅极焊盘由电阻部连接。即,如图9所示,形成有第1-第11电阻部16、34、90、92、94、96、98、100、102、104、106。但是,第6栅极焊盘76没有与第12栅极焊盘88连接。包含从第6栅极焊盘76至第1栅极焊盘12的栅极电阻部在内的栅极配线与包含从第12栅极焊盘88至第1栅极焊盘12的栅极电阻部在内的栅极配线并联连接。在确认了第1-第11电阻部16、34、90、92、94、96、98、100、102、104、106的电阻值符合标准之后,将开关元件70安装至封装件。
然后,将铝线固定在第1-第12栅极焊盘12、14、32、72、74、76、78、8,0、82、84、86、88的任意者,或者针对所述的并联连接的2个栅极配线分别在一处将铝线固定于焊盘(以得到所希望的电阻值)。预先将各电阻部的电阻值设为不同的值,仅通过选择铝线的连接方法,就能够从78种栅极电阻值之中选择所希望的栅极电阻值。
栅极焊盘的数量及配置方法、以及电阻部的数量及配置方法能够适当调整。能够对它们进行适当调整而准备所希望的栅极电阻值的组合。即,多个电阻部只要将多个栅极焊盘连接以使得多个栅极焊盘全部与第1栅极焊盘电连接即可,其数量及配置方法并不特别地限定。
实施方式6.
图10是本发明的实施方式6涉及的半导体装置的电路图。该半导体装置具有第1开关元件10A和第2开关元件10B。第1开关元件10A和第2开关元件10B具有与实施方式1涉及的开关元件10相同的结构。第1开关元件10A与第2开关元件10B并联地连接。
通过将铝线固定在第1开关元件10A的第2栅极焊盘14以及第2开关元件10B的第2栅极焊盘14,从而将它们与栅极驱动电路200连接。控制信号从栅极驱动电路200经由第1开关元件10A的第1电阻部16传送至第1开关元件10A的单元区域。同样的控制信号从栅极驱动电路200经由第2开关元件10B的第1电阻部16传送至第2开关元件10B的单元区域。
根据实施方式1示出的方法,第1开关元件10A的第1电阻部16的电阻值和第2开关元件10B的第1电阻部16的电阻值符合标准。因而,能够避免电流失衡。另外,通过选择是将铝线与第1栅极焊盘12连接、还是与第2栅极焊盘14连接,能够调整开关元件的栅极电阻。因而,能够选择将控制信号供给至第1开关元件10A和第2开关元件10B的第1栅极焊盘12、还是供给至第1开关元件10A和第2开关元件10B的第2栅极焊盘14,应对多个品种。
第1开关元件10A和第2开关元件10B不限定于实施方式1的开关元件10,也可以采用上述的任意开关元件。另外,开关元件的并联数不限于2个,也可以为更多个。这种情况下,以上述的要领将导线分别与多个开关元件的第1栅极焊盘或者上述第2栅极焊盘连接。此外,也可以将上述的各实施方式涉及的开关元件的特征适当地组合,提高本发明的效果。
标号的说明
10开关元件,11衬底,12第1栅极焊盘,14第2栅极焊盘,16第1电阻部,18单元区域,20配线,22、24铝线,26第1栅极焊盘,32第3栅极焊盘,34第2电阻部,40电阻部分,52第1附加栅极焊盘,54第1附加电阻部,60第2附加栅极焊盘,62第2附加电阻部,200栅极驱动电路
Claims (14)
1.一种开关元件,其特征在于,具有:
衬底;
第1栅极焊盘,其形成在所述衬底;
第2栅极焊盘,其形成在所述衬底;
第1电阻部,其形成在所述衬底,将所述第1栅极焊盘与所述第2栅极焊盘连接;以及
单元区域,其形成在所述衬底,与所述第1栅极焊盘连接。
2.根据权利要求1所述的开关元件,其特征在于,具有:
第3栅极焊盘,其形成在所述衬底;以及
第2电阻部,其形成在所述衬底,将所述第2栅极焊盘与所述第3栅极焊盘连接。
3.根据权利要求1或2所述的开关元件,其特征在于,具有:
第1附加栅极焊盘,其形成在所述衬底;以及
第1附加电阻部,其形成在所述衬底,将所述第1栅极焊盘与所述第1附加栅极焊盘连接。
4.根据权利要求3所述的开关元件,其特征在于,具有:
第2附加栅极焊盘,其形成在所述衬底;以及
第2附加电阻部,其形成在所述衬底,将所述第2附加栅极焊盘与所述第1附加栅极焊盘连接。
5.根据权利要求1至4中任一项所述的开关元件,其特征在于,
所述第1栅极焊盘位于所述单元区域的外侧,
该开关元件具有连接部,该连接部形成在所述衬底,将所述第1栅极焊盘与所述单元区域连接。
6.根据权利要求5所述的开关元件,其特征在于,
所述连接部由配线形成。
7.根据权利要求5所述的开关元件,其特征在于,
所述连接部由电阻部分形成。
8.根据权利要求1至7中任一项所述的开关元件,其特征在于,具有:
包含所述第1栅极焊盘以及所述第2栅极焊盘的多个栅极焊盘;以及
包含所述第1电阻部的多个电阻部,其将所述多个栅极焊盘连接,以使得所述多个栅极焊盘全部与所述第1栅极焊盘电连接,
所述多个栅极焊盘以包围所述单元区域的方式形成。
9.根据权利要求1至4中任一项所述的开关元件,其特征在于,
所述第1栅极焊盘形成在所述单元区域内。
10.根据权利要求1至9中任一项所述的开关元件,其特征在于,
所述衬底由宽带隙半导体形成。
11.根据权利要求10所述的开关元件,其特征在于,
所述宽带隙半导体为碳化硅、氮化镓类材料或者金刚石。
12.一种半导体装置,其特征在于,
该半导体装置具有多个开关元件,该开关元件具有:衬底;第1栅极焊盘,其形成在所述衬底;第2栅极焊盘,其形成在所述衬底;第1电阻部,其形成在所述衬底,将所述第1栅极焊盘与所述第2栅极焊盘连接;以及单元区域,其形成在所述衬底,与所述第1栅极焊盘连接,
该半导体装置具有对控制信号进行供给的多根导线,该多根导线分别与多个所述开关元件的所述第1栅极焊盘、或者所述第2栅极焊盘连接。
13.一种半导体装置的制造方法,其特征在于,具有:
制造开关元件的工序,该开关元件具有衬底、第1栅极焊盘、第2栅极焊盘、第1电阻部以及单元区域,该第1栅极焊盘形成在所述衬底,该第2栅极焊盘形成在所述衬底,该第1电阻部形成在所述衬底,将所述第1栅极焊盘与所述第2栅极焊盘连接,该单元区域形成在所述衬底,与所述第1栅极焊盘连接;
使探针触碰所述第1栅极焊盘和所述第2栅极焊盘而测量所述第1电阻部的电阻值的工序;以及
在所述电阻值符合标准的情况下将所述开关元件搭载至模块的工序。
14.一种半导体装置的制造方法,其特征在于,具有:
制造多个开关元件的工序,该开关元件具有衬底、第1栅极焊盘、第2栅极焊盘、第1电阻部以及单元区域,该第1栅极焊盘形成在所述衬底,该第2栅极焊盘形成在所述衬底,该第1电阻部形成在所述衬底,将所述第1栅极焊盘与所述第2栅极焊盘连接,该单元区域形成在所述衬底,与所述第1栅极焊盘连接;
分别针对多个所述开关元件,使探针触碰所述第1栅极焊盘和所述第2栅极焊盘而测量所述第1电阻部的电阻值的工序;以及
选出多个所述开关元件之中所述电阻值处于所希望范围内的开关元件,将所选出的开关元件搭载至1个半导体装置的工序。
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JP6541620B2 (ja) * | 2016-06-03 | 2019-07-10 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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