CN105529246A - 一种通过激光刻蚀碳化硅制备碳化硅超结结构的方法 - Google Patents
一种通过激光刻蚀碳化硅制备碳化硅超结结构的方法 Download PDFInfo
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- CN105529246A CN105529246A CN201510876293.4A CN201510876293A CN105529246A CN 105529246 A CN105529246 A CN 105529246A CN 201510876293 A CN201510876293 A CN 201510876293A CN 105529246 A CN105529246 A CN 105529246A
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- silicon carbide
- epitaxial wafer
- laser
- carbide epitaxial
- sic
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 132
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000010329 laser etching Methods 0.000 title abstract description 5
- 238000000608 laser ablation Methods 0.000 claims description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000000407 epitaxy Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 2
- 229910004541 SiN Inorganic materials 0.000 claims 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 60
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005498 polishing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Weting (AREA)
Abstract
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CN201510876293.4A CN105529246B (zh) | 2015-12-03 | 2015-12-03 | 一种通过激光刻蚀碳化硅制备碳化硅超结结构的方法 |
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CN201510876293.4A CN105529246B (zh) | 2015-12-03 | 2015-12-03 | 一种通过激光刻蚀碳化硅制备碳化硅超结结构的方法 |
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CN105529246A true CN105529246A (zh) | 2016-04-27 |
CN105529246B CN105529246B (zh) | 2018-10-09 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107768238A (zh) * | 2017-09-29 | 2018-03-06 | 中国科学院半导体研究所 | 格栅调谐外延生长碳化硅薄膜的方法 |
CN108022924A (zh) * | 2017-11-30 | 2018-05-11 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结及其制造方法 |
CN109727860A (zh) * | 2017-10-30 | 2019-05-07 | 全球能源互联网研究院 | 一种制备碳化硅超结二极管的方法 |
CN111477542A (zh) * | 2020-05-25 | 2020-07-31 | 芜湖启迪半导体有限公司 | 一种含超级结的3C-SiC外延结构及其制备方法 |
CN111477545A (zh) * | 2020-04-09 | 2020-07-31 | 浙江大学 | GaN器件SiC衬底刻蚀方法 |
CN114664649A (zh) * | 2022-05-19 | 2022-06-24 | 浙江大学杭州国际科创中心 | 碳化硅高深宽比槽刻蚀工艺优化方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111822876B (zh) * | 2020-09-15 | 2020-12-08 | 中电化合物半导体有限公司 | 基于溶液射流辅助激光图形化碳化硅籽晶的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004241768A (ja) * | 2003-01-16 | 2004-08-26 | Fuji Electric Device Technology Co Ltd | 半導体素子 |
CN102832248A (zh) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | 基于半超结的碳化硅mosfet及制作方法 |
US20140117437A1 (en) * | 2012-10-31 | 2014-05-01 | Infineon Technologies Austria Ag | Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area |
CN104380471A (zh) * | 2012-06-13 | 2015-02-25 | 株式会社电装 | 碳化硅半导体装置及其制造方法 |
CN105047542A (zh) * | 2015-09-06 | 2015-11-11 | 国网智能电网研究院 | 一种沟槽型碳化硅mosfet功率器件的制造方法 |
-
2015
- 2015-12-03 CN CN201510876293.4A patent/CN105529246B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004241768A (ja) * | 2003-01-16 | 2004-08-26 | Fuji Electric Device Technology Co Ltd | 半導体素子 |
CN104380471A (zh) * | 2012-06-13 | 2015-02-25 | 株式会社电装 | 碳化硅半导体装置及其制造方法 |
CN102832248A (zh) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | 基于半超结的碳化硅mosfet及制作方法 |
US20140117437A1 (en) * | 2012-10-31 | 2014-05-01 | Infineon Technologies Austria Ag | Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area |
CN105047542A (zh) * | 2015-09-06 | 2015-11-11 | 国网智能电网研究院 | 一种沟槽型碳化硅mosfet功率器件的制造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107768238A (zh) * | 2017-09-29 | 2018-03-06 | 中国科学院半导体研究所 | 格栅调谐外延生长碳化硅薄膜的方法 |
CN109727860A (zh) * | 2017-10-30 | 2019-05-07 | 全球能源互联网研究院 | 一种制备碳化硅超结二极管的方法 |
WO2019086049A1 (zh) * | 2017-10-30 | 2019-05-09 | 全球能源互联网研究院有限公司 | 一种制备碳化硅超结二极管的方法 |
CN108022924A (zh) * | 2017-11-30 | 2018-05-11 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结及其制造方法 |
CN108022924B (zh) * | 2017-11-30 | 2020-08-07 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结及其制造方法 |
CN111477545A (zh) * | 2020-04-09 | 2020-07-31 | 浙江大学 | GaN器件SiC衬底刻蚀方法 |
CN111477542A (zh) * | 2020-05-25 | 2020-07-31 | 芜湖启迪半导体有限公司 | 一种含超级结的3C-SiC外延结构及其制备方法 |
CN114664649A (zh) * | 2022-05-19 | 2022-06-24 | 浙江大学杭州国际科创中心 | 碳化硅高深宽比槽刻蚀工艺优化方法 |
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Inventor after: Liu Min Inventor after: Zhao Yongmei Inventor after: Yang Fuhua Inventor after: Sun Guosheng Inventor after: Zeng Yiping Inventor after: He Zhi Inventor after: Liu Shengbei Inventor after: Liu Xingfang Inventor after: Yang Xiang Inventor after: Fan Zhongchao Inventor after: Wang Xiaofeng Inventor after: Pan Lingfeng Inventor after: Wang Xiaodong Inventor before: Liu Shengbei Inventor before: Yang Fuhua Inventor before: Sun Guosheng Inventor before: Zeng Yiping Inventor before: He Zhi Inventor before: Liu Xingfang Inventor before: Liu Min Inventor before: Yang Xiang Inventor before: Fan Zhongchao Inventor before: Wang Xiaofeng Inventor before: Wang Xiaodong Inventor before: Zhao Youmei |
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