CN105518888B - 微发光二极管的修复方法、制造方法、装置及电子设备 - Google Patents

微发光二极管的修复方法、制造方法、装置及电子设备 Download PDF

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CN105518888B
CN105518888B CN201580001211.XA CN201580001211A CN105518888B CN 105518888 B CN105518888 B CN 105518888B CN 201580001211 A CN201580001211 A CN 201580001211A CN 105518888 B CN105518888 B CN 105518888B
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CN105518888A (zh
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邹泉波
王喆
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Goertek Inc
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Abstract

本发明公开了一种微发光二极管的修复方法、制造方法、装置及电子设备。该用于修复微发光二极管的方法包括：使导电拾取头上的已知良好微发光二极管与接收衬底的缺陷位置处的第一接垫接触，其中，导电拾取头和已知良好微发光二极管通过导电粘接物接合在一起；通过导电拾取头对第一接合层进行局部焦耳加热，使得第一接合层熔化，其中，第一接合层位于已知良好微发光二极管和第一接垫之间；以及在对第一接合层进行冷却之后提升导电拾取头，以将已知良好微发光二极管留在接收衬底上。

Description

微发光二极管的修复方法、制造方法、装置及电子设备
技术领域
本发明涉及微发光二极管，更具体地，涉及一种用于修复微发光二极管的方法、用于制造微发光二极管装置的方法、微发光二极管装置和电子设备。
背景技术
微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。目前，微发光二极管技术正开始发展，工业界正期待有高品质的微发光二极管产品进入市场。高品质微发光二极管产品会对市场上已有的诸如LCD/OLED的传统显示产品产生深刻影响。
在制造微发光二极管装置的过程中，在将微发光二极管转移到接收衬底上之后，可能发现接收衬底上有缺陷微发光二极管。在这种情况下，要对缺陷进行修复，在此称为微发光二极管修复。接收衬底例如是显示屏。
在现有技术中，在修复过程中，对具有已知良好微发光二极管的承载衬底整体进行加热，使得承载衬底上的焊料熔化。接着，使用拾取头拾取已知良好微发光二极管。然后，将拾取头及已知良好微发光二极管移动到接收衬底的缺陷位置。通过对整个接收衬底进行加热，将已知良好微发光二极管焊接到接收衬底上。
美国专利US8,518,204 B2公开了一种制造和转移微器件及微器件阵列到接收衬底的方法。该专利在此全部引入作为参考。
在现有技术中，在修复过程中，需要对承载衬底和/或接收衬底整体进行加热，这会对微发光二极管的性能产生影响。此外，一般来说，需要修复的微发光二极管仅是微发光二极管阵列中很小的一部分。因此，在对承载衬底和/或接收衬底整体进行加热的方式中效率较低。
发明内容
本发明的一个目的是提供一种用于修复微发光二极管的新技术方案。
根据本发明的第一方面，提供了一种用于修复微发光二极管的方法，包括：使导电拾取头上的已知良好微发光二极管与接收衬底的缺陷位置处的第一接垫接触，其中，导电拾取头和已知良好微发光二极管通过导电粘接物接合在一起；通过导电拾取头对第一接合层进行局部焦耳加热，使得第一接合层熔化，其中，第一接合层位于已知良好微发光二极管和第一接垫之间；以及在对第一接合层进行冷却之后提升导电拾取头，以将已知良好微发光二极管留在接收衬底上。
优选地，所述方法还包括：通过导电粘接物使导电拾取头与承载衬底上的已知良好微发光二极管接触；通过导电拾取头对第二接合层进行局部焦耳加热，使得第二接合层熔化，其中，第二接合层位于已知良好微发光二极管和承载衬底之间；以及通过导电拾取头拾取已知良好微发光二极管。
优选地，通过微发光二极管的I-V特性监控所述接合层的温度，以确定温度超过所述接合层的熔点。
优选地，所述导电拾取头的材料的导热系数小于100瓦/米·度。
优选地，所述导电拾取头的材料的导热系数小于30瓦/米·度。
优选地，所述导电拾取头的材料的导热系数小于1瓦/米·度。
优选地，通过垂直过孔将所述导电拾取头的顶部和底部导电连接。
优选地，所述接合层的熔点小于280℃。
优选地，缺陷位置处的第一接垫是用于修复的冗余接垫。
优选地，导电粘接物的粘合力大于所述接合层熔化时的表面张力且小于所述接合层冷却时的接合力。
优选地，所述承载衬底的材料的导热系数小于100瓦/米·度。
根据本发明的第二方面，提供了一种用于制造微发光二极管装置的方法，包括使用根据本发明的方法修复微发光二极管装置的接收衬底上的微发光二极管。
根据本发明的第三方面，提供了一种微发光二极管装置，它使用根据本发明的方法被制造。
根据本发明的第四方面，提供了一种电子设备，包括根据本发明的微发光二极管装置。
本发明的发明人发现，在现有技术中，在修复过程中，需要对承载衬底和/或接收衬底整体进行加热。然而，本发明通过导电拾取头对微发光二极管局部加热。因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是根据本发明的一个实施例的用于修复微发光二极管的方法的流程图。
图2至图5是根据本发明的一个用于修复微发光二极管的例子的示意图。
图6是示意性地示出了微发光二极管的I-V曲线的示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
下面参照附图详细描述根据本发明的实施例和例子。
图1示出了根据本发明的一个实施例的用于修复微发光二极管的方法的流程图。
如图1所示，在步骤S1100，使导电拾取头上的已知良好微发光二极管与接收衬底的缺陷位置处的第一接垫接触。可以向下按压导电拾取头，使得所述已知良好微发光二极管与第一接垫更加充分地接触。导电拾取头和已知良好微发光二极管可以通过导电粘接物接合在一起。缺陷位置处的第一接垫可以是用于修复的冗余接垫。
可以通过多种方式将已知良好微发光二极管设置在导电拾取头上。例如，导电拾取头从承载衬底上拾取已知良好微发光二极管。可以通过现有技术的方式来执行所述拾取。
可选地，在一个例子中，可以通过导电粘接物使导电拾取头与承载衬底上的已知良好微发光二极管接触。接着，通过导电拾取头对第二接合层进行局部焦耳加热，使得第二接合层熔化，并通过导电拾取头拾取已知良好微发光二极管。第二接合层位于已知良好微发光二极管和承载衬底之间。本领域技术人员应当理解，诸如焊料的接合层是导电的，以及可以通过接合层和导电拾取头来形成导电回路，从而进行局部焦耳加热。
可以通过微发光二极管的I-V特性监控所述第二接合层的温度，以确定温度超过所述接合层的熔点。例如，所述第二接合层具有较低的熔点，例如，小于280℃(例如，Au-Sn共熔合金的熔点)；优选地，小于232℃ (例如，Sn的熔点)；更优选地，小于200℃(例如In的熔点为157℃)。本领域技术人员应当理解，所述导电粘接物的粘合力应当大于所述第二接合层熔化时的表面张力。
例如，所述承载衬底的材料可以是具有较小的导热系数的材料，诸如塑料、玻璃、石英等。例如，它的导热系数小于100瓦/米·度，优选地，小于30瓦/米·度，更优选地，小于1瓦/米·度。通过使用具有较小导热系数的材料，可以减小在拾取时对其他微发光二极管的影响。
在步骤S1200,通过导电拾取头对第一接合层进行局部焦耳加热，使得第一接合层熔化。第一接合层位于已知良好微发光二极管和第一接垫之间。本领域技术人员应当理解，可以通过诸如焊料的接合层或接垫与导电拾取头来形成导电回路，从而进行局部焦耳加热。
例如，所述导电拾取头的材料可以具有较小的导热系数，从而在加热过程提高效率。例如，它的导热系数小于100瓦/米·度，优选地，小于 30瓦/米·度，更优选地，小于1瓦/米·度。
例如，所述拾取头可以采用PCB板形成。可以通过垂直过孔将所述导电拾取头的顶部和底部导电连接。
可以通过微发光二极管的I-V特性监控所述第一接合层的温度，以确定温度超过所述接合层的熔点。例如，所述第一接合层具有较低的熔点，例如，小于280℃(例如，Au-Sn共熔合金的熔点)；优选地，小于232℃ (例如，Sn的熔点)；更优选地，小于200℃(例如In的熔点为157℃)。
在步骤S1300,在对第一接合层进行冷却之后提升导电拾取头，以将已知良好微发光二极管留在接收衬底上。例如，所述冷却可以是完全冷却或部分冷却。
本领域技术人员应当理解，所述导电粘接物的粘合力应当大于所述第一接合层熔化时的表面张力且小于所述第一接合层冷却时的接合力。
在根据本发明的技术方案中，使用导电拾取头进行局部焦耳加热，从而可以仅熔化局部的接合层。通过本发明的技术方案可以减小对承载衬底和/或接收衬底上其他微发光二极管的影响。
此外，通过I-V特性监控接合层的温度，可以较精确地确定接合层的熔化状态。因此，通过本发明，可以减小所使用的能量。此外，可以减小对所拾取的微发光二极管和/或其他微发光二极管的影响。
根据本发明的又一个实施例，还提供了一种用于制造微发光二极管装置的方法。该制造方法包括使用根据本发明的方法修复微发光二极管装置的接收衬底上的微发光二极管。所述接收衬底例如是显示屏面板或显示衬底。所述微发光二极管装置例如是显示屏装置。
在该又一个实施例中，本发明还包括一种微发光二极管装置，例如显示屏装置。可以使用根据本发明的用于制造微发光二极管装置的方法来制造所述微发光二极管装置。
在该又一个实施例中，本发明还包括一种电子设备。该电子设备包含根据本发明的微发光二极管装置。例如，该电子设备可以是手机、平板电脑等。
下面，参照图2-5 描述根据本发明的例子。
图2示出了承载衬底201、接合层202、已知良好微发光二极管204。承载衬底201例如具有低导热系数。承载衬底的材料例如是塑料、玻璃或石英等。接合层202例如是焊料、金属、合金等。接合层例如具有较低的熔点，例如小于280℃。已知良好微发光二极管204的p金属电极203与接合层接合。
如图2所示，以箭头A的方向将拾取头205向下按压，以通过导电粘接物206与已知良好微发光二极管接触。通过拾取头205和接合层形成电回路。在回路中施加电流，如208所示。例如，在207所指示的位置，温度升高。
通过回路中的I-V特性(即微发光二极管的I-V特性)来监控温度。一般来说，通过检测微发光二极管的电流和/或电压，可以较准确地确定微发光二极管的温度。图6示意性地示出了I-V曲线与温度的关系。如图6 中箭头所示，当温度从T1上升到T2后，I-V曲线向左移动。这里，通过 I-V特性来监控温度包括通过检测电流和/或电压来监控温度。
如图3所示，当温度超过接合层的熔点时，按箭头B方向提升拾取头 205，以将已知良好微发光二极管剥离承载衬底201。
如图4所示，将拾取头205移动到接收衬底209的缺陷位置。拾取头上的已知良好微发光二极管通过接合层214与接收衬底209上的接垫接触。在图4中，微发光二极管212的p金属电极211与接收衬底上的接垫接合。按箭头C所示的方向，向下按压拾取头205，使得已知良好微发光二极管与接垫充分接触。
通过拾取头205和引线210(及接垫)形成回路。如213所示，在该回路施加电流，从而进行局部焦耳加热。通过回路中的I-V特性(即微发光二极管的I-V特性)来监控温度。
当温度超过熔点时，提升并移开拾取头205。如图5所示，修复后的已知良好微发光二极管212r被留在接收衬底209上。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (12)

1.一种用于修复微发光二极管的方法，包括：
通过导电粘接物使导电拾取头与承载衬底上的已知良好微发光二极管接触；
通过导电拾取头对第二接合层进行局部焦耳加热，使得第二接合层熔化，其中，第二接合层位于已知良好微发光二极管和承载衬底之间；
通过导电拾取头拾取已知良好微发光二极管；
使导电拾取头上的已知良好微发光二极管与接收衬底的缺陷位置处的第一接垫接触，其中，导电拾取头和已知良好微发光二极管通过导电粘接物接合在一起；
通过导电拾取头对第一接合层进行局部焦耳加热，使得第一接合层熔化，其中，第一接合层位于已知良好微发光二极管和第一接垫之间；以及
在对第一接合层进行冷却之后提升导电拾取头，以将已知良好微发光二极管留在接收衬底上，
其中，导电粘接物的粘合力大于所述第二接合层熔化时的表面张力且小于所述第一接合层冷却时的接合力。
2.根据权利要求1所述的方法，其中，通过微发光二极管的I-V特性监控所述第一接合层和第二接合层的温度，以确定温度超过所述第一接合层和第二接合层的熔点。
3.根据权利要求1所述的方法，其中，所述导电拾取头的材料的导热系数小于100瓦/米·度。
4.根据权利要求3所述的方法，其中，所述导电拾取头的材料的导热系数小于30瓦/米·度。
5.根据权利要求4所述的方法，其中，所述导电拾取头的材料的导热系数小于1瓦/米·度。
6.根据权利要求1所述的方法，其中，通过垂直过孔将所述导电拾取头的顶部和底部导电连接。
7.根据权利要求1所述的方法，其中，所述第一接合层和第二接合层的熔点小于280℃。
8.根据权利要求1所述的方法，其中，缺陷位置处的第一接垫是用于修复的冗余接垫。
9.根据权利要求1所述的方法，其中，所述承载衬底的材料的导热系数小于100瓦/米·度。
10.一种用于制造微发光二极管装置的方法，包括使用根据权利要求1所述的方法修复微发光二极管装置的接收衬底上的微发光二极管。
11.一种微发光二极管装置，它使用根据权利要求10所述的方法被制造。
12.一种电子设备，包括根据权利要求11所述的微发光二极管装置。
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