TW200421501A - Localized reflow for wire bonding and flip chip connections - Google Patents

Abstract

A system for soldering electrical connection for a chip includes a bonding pad, a solder bump, and an energy source. The energy source is localized to the solder bump without physically contacting the solder bump. The localized energy source heats the solder bump to reflow the solder bump on the bonding pad without heating the entire chip.

Description

200421501 玖 玖, cross-reference to related invention descriptions The present invention claims the benefits of "Partial Reflow of Wiring Bonding and Flip Chip Connection" in US Provisional Application No. 60/43 4,474, filed on December 18, 2002, This reference contains its entirety. [Technical Field to which the Invention belongs] The present invention relates generally to soldering for electronic connection to a wafer, and more specifically to wiring bonding and flip-chip bonding. [Previous technology] Since the introduction of low dielectric (low-k) materials, many people have invested a lot of effort to develop new technologies and integrate old and known methods to solve the problems caused by dielectric materials formed of low-k materials. . Low-k materials are structurally and mechanically weaker than conventional insulators such as SiO2. Therefore, due to the delamination of the low-k layer and the cracking and cracking of the interconnect lines during the manufacturing process, the device is more likely to fail. For example, "the conventional technique of wiring bonding to a bonding pad or connecting a flip chip to a substrate" requires considerable pressure to be applied to the underlying metal structure during the bonding process. In addition, the fabrication of a flip chip connection usually requires heating the flip chip and the substrate in a furnace to a temperature not lower than the melting point of the soldering material that forms the joint between the flip chip and the substrate. In particular, if soldering the bumps, higher temperatures are needed to facilitate reflow and connection. For example, 20 to 30 degrees Celsius is higher than the melting point of the solder bumps (Pb-Sn eutectic alloy is 205 -22 Celsius). 0 degree). In addition, (2) (2) 200421501 right-side flip-chip connection, in addition to high temperature, due to the different thermal expansion coefficient of the flip-chip and the substrate, thermal stress will be generated when the wafer is cooled. As shown in Figures 1 A and 2B, when low-k materials are used, stress and thermal expansion associated with conventional techniques may cause defects to form in the low-k materials. Furthermore, countries in Asia and Europe will ban the use of 纟 α as a soldering material for electronic components as early as 2004. p b or s η P b eutectic alloys require lower soldering temperatures than lead-free solders with higher melting temperature characteristics such as S η or Ag C11. Therefore, the promotion of low-k materials and the prohibition of lead in electronic packaging, and thermal planning control will become the key to reduce or remove the damage to the metal layer during interconnection and flip-chip manufacturing. In some conventional techniques, the size of the bonding pad is reduced or strengthened to reduce the force applied to the metal layer. Although this can reduce some contact pressure, there are still thermal stresses and the effect of repeated contact pressure accumulation on the underlying metal layer. [Summary of the Invention] In an exemplary embodiment, a soldering system for chip electronic connection includes bonding pads, solder bumps, As well as energy sources. In this exemplary embodiment, the energy source is localized to the welding bump, but does not actually contact the welding bump. The local energy source heats the solder bumps to re-solder the solder bumps onto the bond pads without heating the entire wafer. [Embodiment] The following description discloses various specific configurations and parameters. It should be understood, however, that this description is not intended to limit the scope of the present invention, but should be considered as providing a description of example embodiments. Wiring Bonding Referring to FIG. 3A, in an exemplary embodiment, an electronic connection soldering system for a wafer 300 includes a bonding pad 302, a solder bump 304, and an energy source 306. In this exemplary embodiment, the energy source 306 is localized to the solder bumps 304 without actually touching the solder bumps 304. The local energy source 3 06 heats the solder bumps 3 04 to re-solder the solder bumps 3 04 on the bonding pads 3 02 without heating the entire wafer 300. In the embodiment shown in FIG. 3A, the solder bumps 304 are connected to the wiring 308. The solder bump 3 04 and the wiring 3 0 8 are located on the bonding pad 3 02, and the local energy source 3 0 6 heats the solder bump 3 0 4 located on the bonding pad 3 0 2. As shown in FIG. 3B, the solder bumps 3 0 4 and the wirings 3 0 8 form wiring bonds on the bonding pads 3 02. In this exemplary embodiment, the 'soldering bump 304 is preferably 96.5% tin and 3.5% silver tin. The solder bump 304 preferably has a melting point higher than 221 ° C. It should be understood, however, that other materials having other melting points may be used to form the solder bumps 304. In this exemplary embodiment, the local energy source 306 may include laser, x-ray, electronic Andy electric heater, infrared heater, and electron beam. When the local energy source 3 0 6 laser, the laser can be a solid-state laser (such as ruby, N cU glass, ND: YAG (Yttrium Aluminum Garnet, YMhO] 2), and the like, or a gas laser (Such as (4) (4) 200421501 HE-NE, CO2, HF, and the like). Referring to FIG. 4A, in another exemplary embodiment, before the welding bump 3 0 4 is positioned on the bonding pad 3 0 2, the local energy source 3 0 6 heats the welding bump 3 0 4. When the solder bump 3 04 has been melted by heating, the solder bump 3 04 and the wiring 3 08 are positioned on the bonding pad 3 02. As shown in FIG. 4B, the solder bumps 304 and the wirings 308 form wirings bonded to the bonding pads. Referring to FIG. 5A, in another exemplary embodiment, the welding bump 3 0 4 is positioned on the bonding pad 3 0 2 before the local energy source 3 0 6 heats the welding bump 3 0 4 and the bonding pad 3 0 2 . When the solder bump 3 04 has been melted by heating, the thermal solder bump 3 04 is positioned on the heating bonding pad 3 02. As shown in FIG. 5B, the 'soldering bumps 3 0 4 and the wirings 3 0 8 form wirings and are bonded to the bonding pads. In this exemplary implementation, a wetting layer 502 is formed on the bonding pad 302. The local energy source 3 02 melts the wetting layer 5 02 covering the bonding pad 3 02. The wetting layer 502 may include Au, CuTi, TiN, Tin, SbPb, SnAg alloy, and the like. In this example implementation, the local energy source 3 06 may include a first energy source 3 06 localized to the welding bump 3004 and a second energy source 3 06 localized to the bonding pad 302. The first energy source 3 06 heats the solder bump 30 04 and the second energy source 3 06 heats the bonding pad 30 02. Instead, the local energy source 3 06 series can be moved. The movable energy source 3 06 first heats the solder bump 3 04 and then moves to heat the bonding pad 3 02. Referring to FIG. 6A, in another exemplary embodiment, before the welding bump 3 04 is heated by the local energy source 3 06, the welding bump 3 04 is positioned on the joint -7- (5) (5) 200421501 pad 3 02 . As shown in FIG. 6B, after the solder bump 304 is heated, the wiring 308 is connected to the solder bump 304. In this exemplary embodiment, the local energy source 3 06 heats the wiring 3 0 8 and the solder bump 3 04, and then connects the heated wiring 3 0 8 to the heated solder bump 3 04 to form a wire bonded to the bonding pad 3 02 on. In this exemplary implementation, a wetting layer 502 is formed on the bonding pad 302. The local energy source 3 0 2 melts the wetting layer 5 2 covering the bonding pad 3 0 2. The wetting layer 502 may include Au, CuTi, TiN, Tin, SbPb, SnAg alloy, and the like. In this example implementation, the local energy source 306 may include a first energy source 306 localized to the wiring 308 and a second energy source 306 localized to the solder bump 304. The first energy source 306 heats the wiring 308, and the second energy source 306 heats the solder bump 304. Instead, the local energy source 3 06 series can be moved. The movable energy source 306 first heats the wiring 308, and then moves to heat the solder bump 304. Referring to FIG. 7, in an exemplary embodiment, the wafer 300 may include a plurality of bonding pads 302, a plurality of solder bumps 304, and wirings 308. As shown in Figure 7, multiple energy sources 306 can be used to heat multiple solder bumps 304. In particular, 'each energy source 3 0 6 is localized to each solder bump 3 0 4 to heat each solder bump 304 to resolder each solder bump 304 to each bonding pad 302' without heating the entire wafer 300 . Using multiple energy sources 3 06 to heat multiple solder bumps 3 0 4 can increase the efficiency of the reflow process. Referring to FIG. 8, in another exemplary embodiment, the mosaic mask 802 is disposed between the energy source 306 and the plurality of solder bumps 304. As shown in Fig. 8 (6) (6) 200421501, the mosaic mask 80 2 includes a cutout region 8 0 4 corresponding to the solder bump 3 0 4. Therefore, the energy source 3 0 6 is localized to each welding bump 3 04 through each cut-out region 8 0 4 to heat each welding bump 3 04 to re-solder each welding bump 3 04 on each bonding pad 3 02 Without heating the entire wafer 3,000. In this exemplary embodiment, the mosaic mask 802 may be an opaque material, preferably a metal or alloy with high conductivity and high melting point, such as Ti, W, Cu, Ta, Au, A1, and the like. Category. The mosaic mask 802 may be connected to the heat exchanging element 806 to maintain the temperature of the mosaic mask 802. The energy source 3 06 may be a wide beam laser, an infrared heating lamp, an electron beam, and the like. When the energy source 306 is an electron beam, the reflow process is best performed in a vacuum environment. Referring to FIG. 9, in another exemplary embodiment, the energy source 306 is movable. As shown in FIG. 9, the movable energy source 3 06 can be moved to between the solder bumps 3 04 to heat each solder bump 3 04 to resolder the solder bumps on the bonding pad 302 without heating the entire wafer 300. . As also shown in Fig. 9, the movable energy source 3 0 6 can move in the X, y, and y directions. It should be noted that the wafer 300 can remain stationary or move relative to the moving energy source 300. Referring to FIG. 10, in yet another exemplary embodiment, the wafer 300 is moved to position each welding bump 3 04 to adjacent energy source 3 06 to heat the welding bump 3 04 to re-solder a welding bump 304 to each bonding pad. 3 02 without heating the entire wafer 3 00. In this exemplary embodiment, the chip 300 can be placed on the movable table 1002 or any suitable mobile device. It should be noted that the wafer 300 may remain stationary or move relative to the moving energy source 306. Referring to FIG. 1, in another exemplary embodiment, the positioning system 1 102-9-(7) (7) 200421501 can be used to investigate and locate the position of the bonding pad 300 on the wafer 300. In this exemplary embodiment, the positioning system 1 102 may be an optical imaging system, such as a charge coupled device (CCD) camera. As shown in Fig. 11, the positioning system 1 102 can be connected to the energy source 3 06. The positioning system 1 102 and the energy source 3 06 may be disposed on and move along the X-axis bar 1 104, and the X-axis bar 1 104 may be moved along the y-axis bar 1 1 06. Therefore, in this exemplary embodiment, the positioning system 110 and the energy source can be moved to any position on the wafer. Flip-Chip Connection Referring to Figure 12A, the wafer 300 is bonded to the base 1200 and is commonly referred to as a flip-chip. As shown in FIG. 12A, the solder bump 3 04 is interposed between the flip chip 300 and the base body 1 200 to connect and bond the flip chip 300 and the base body 1 200. Generally, for a typical eutectic alloy of 63% Sn and 37% Pb, a flip chip connection requires a high melting point of 183 ° C and a solder deposition time of about 10 seconds. A longer solder deposition time will cause longer contact pressure on the dielectric layer of the wafer 300, which may be a defect in the dielectric layer early, especially when the dielectric layer includes a low-k material. Therefore, in this exemplary embodiment, the energy source 306 is localized to the solder bump 304 located between the flip chip 300 and the substrate 1 200. As shown in FIG. 12B, the local energy source 3 06 heats the solder bump 3 04 until the solder bump 3 04 is re-soldered to an hourglass shape connected between the flip chip 3 00 and the substrate 1 2 0 0 . Referring to FIG. 13, in an exemplary embodiment, the flip chip 300 may (8) (8) 200421501 include a plurality of solder bumps 3 (M. In this exemplary embodiment, the mosaic mask 802 may be placed Between the energy source 306 and the plurality of welding bumps 304. As shown in FIG. 13, the mosaic mask 802 includes a cut-out area 804 corresponding to the welding bump 304. Therefore, the 'energy source 3 0 The 6 series is localized to each solder bump 3 0 4 by each cut-out area 8 0 4 to heat each solder bump 3 0 4 to resolder each solder bump 3 0 4 on each bonding pad 3 02, and The entire flip chip 300 is not heated. Specifically, in this exemplary embodiment, the energy source 306 heats the solder bumps 304 on the flip chip 300 by heating the solder bumps 304 on the substrate 1200. Therefore, in this exemplary embodiment, a sensor 1302 can be equipped to scan the positioning mark 1304 behind the base body 1 200 to position the mosaic mask 8 04 on the base body 1 200. The sensor 1306 can also be equipped. To adjust the position relative to the flip chip 3 0 0 base 1 2 0 0. In this exemplary embodiment, the sensors 1 3 02 and 1 3 06 are optical sensors. However, it should be noted that Other types of sensors are used. In this exemplary embodiment, the flip chip is located on the movable table 1 002, and the movable table 1 002 moves the flip chip 3 00 relative to the inlay mask 802. As shown in FIG. 13 As shown, the movable table 1002 can be moved in the directions of x, y, z, and theta. Referring to FIG. 14, in another exemplary embodiment, a heater 140 can be used to heat the flip chip 300. The heater 1 402 heats Flip chip 300 to reduce the amount of power required from energy source 3 06. However, heater 1402 heats flip chip 300 to a temperature lower than the melting point of solder bump 3004 in flip chip 300. Refer to Section 1 Figure 5, in yet another exemplary embodiment, the flip chip 3 0 0 (9) (9) 200421501 and the substrate 1 2 0 0 are placed in a sealed chamber} 5 〇2. As shown in Figure i 5 ' The mosaic mask 8 02 is placed outside the sealed 1502. In this exemplary embodiment, the sealed chamber 1 50 02 includes a glass upper part 1 5 04. Therefore, the energy source 306 is cut by the mosaic mask 802 The lower area 804 and the upper glass part 1 5 04 are localized to the solder bumps 304 on the flip chip 300 to re-solder the solder bumps 3 04, without heating the entire flip chip 3 00. In this exemplary embodiment, the sealed chamber 1502 has a controlled temperature. As shown in FIG. 15, the sealed chamber 1502 has a gas inlet 1506. During the reflow process, When the solder bump 304 is re-soldered, for example, a blunt gas of nitrogen is introduced from the gas inlet 1506 to reduce or prevent oxidation of the solder bump 304. After reflow, a cooling gas such as nitrogen is introduced through the gas inlet 1506 to cool the flip chip 300 and the substrate 1200 to reduce or minimize the thermal effect generated during the reflow process. Referring to FIGS. 16A, 16B, and 16C, an example process of re-soldering the solder bumps 304 on the flip chip 300 will be described. In particular, in FIG. 16A, a mosaic mask 802 is used to localize the energy source 3 06 to the solder bump 304 on the flip chip 300, and the solder bump 304 is heated at a temperature higher than the melting point of the solder bump 304. The solder bumps 304 are re-soldered without heating the entire flip chip 300. In detail, the solder bump 3 04 is heated to a temperature of 10 to 100 degrees Celsius higher than the melting point of the solder bump 3 04, preferably 50 degrees Celsius. In FIG. 16, when the temperature of the solder bump 3 04 on the flip chip 300 is higher than the melting point of the solder bump 300, the solder bump on the bonding pad or the substrate 1 200 and the flip chip 300 The solder bumps 3 04 are in contact. In FIG. 16C, the solder bump 3 04 of the flip chip 300 and the bonding pad or base (10) (10) 200421501 body 1 200 are kept in contact until the solder bump on the flip chip 300. Block 3 04 is cooled below the melting point of solder bump 304 on flip chip 300. Referring to FIGS. I7A, 17B, and 17C, in an exemplary embodiment, the substrate 1 200 is a printed circuit board / card. Therefore, the flip chip is bonded to the printed circuit board / card 1200. Referring to FIG. 18A, in an exemplary embodiment, the flip chip 300 is placed on the movable table 1002. The movable table 1 002 moves the flip chip 300 to a first position lower than the mosaic mask 8 08 and a second position lower than the base 1200. When the flip chip 300 is in the first position, the solder bump 3 04 of the flip chip 300 is heated by the heating source 3 06 through the mounting device 8 0 8. As shown in FIG. 18B, when the flip chip 300 is in the second position, the solder bump on the bonding pad or the substrate 1200 is in contact with the solder bump 300 on the flip chip 300. Referring to FIG. 19A, in yet another exemplary embodiment, the flip chip 300 is kept stationary. The inlaid mask 8 0 8 and the energy source 3 0 6 are moved to the vicinity of the flip chip 300 to heat the solder bump 3 04 of the flip chip 300. As shown in FIG. 19B, when the solder bump 3 04 of the flip chip 300 has been heated, the substrate 1200 is moved to the adjacent position of the flip chip 300, so that the solder bump or the bonding pad of the base 1 2 00 and The solder bumps 304 of the flip chip 300 are in contact. In this exemplary embodiment, the loading automatic control device 1902 moves the substrate 1200 to contact the solder bumps or bonding pads of the substrate 1200 with the solder bumps 304 of the flip chip 300. Although the exemplary embodiment has been described, a variety of changes can be made without departing from the spirit and scope of the invention -13- (11) (11) 200421501. Therefore, the present invention should not be limited to the specific forms described above and shown in the drawings. [Brief description of the drawings] The present invention can be easily understood by referring to the above description and the accompanying drawings, wherein similar elements will be represented by similar symbols. Figure 1 shows the prior art of using contact pressure to hold and solder the wiring on the bonding pads; Figures 2A and 2B show the prior art of reflow soldering materials between the flip chip and the substrate using a furnace; Figures 3, 38 Figure 4, Figure 48, Figure 48, Figure 5, Figure 8, Figure 6, and Figure 66 show example embodiments of heating welding bumps using local energy sources. Figure 7 shows the use of multiple local energy sources to heat multiple welding solder bumps. Example embodiment; Figure 8 shows an example embodiment of heating multiple welding bumps using an energy source localized by a mosaic mask; Figure 9 shows using a movable local energy source to heating multiple welding solder bumps Example embodiment; FIG. 10 shows an example embodiment using a fixed energy source and a mobile table to heat a plurality of welding welding bumps; FIG. 1 shows an example embodiment using a positioning system and an energy source 12A and 12B The figure shows an example embodiment using a local energy source to heat bond the inverted S-wafer to the substrate; • 14- (12) (12) 200421501 Figures 1 3 -1 5 shows the use of an energy source localized by a mosaic mask to Example embodiments of heating multiple solder bumps to bond flip-chips to a substrate Figures 16A, 16B, and 16C show example embodiments of bonding flip-chips to a substrate; Figures 17A, 17B, and 17C show bonding Example embodiment of mounting a wafer on a printed circuit board / card. Figures 18A and 18B show an example of bonding a flip chip to a substrate using a movable table. Figures 19A and 19B show bonding using a loading automatic control device. Example embodiment of flip chip on the substrate; [Comparison table of main components] 300 wafers 302 bonding pads 304 solder bumps 306 energy source 308 wiring 502 wetting layer 802 mosaic mask 804 cut-out area 806 heat exchange element 808 mosaic mask Cover 1002 Movable table -15- (13) Positioning system X-axis bar y-axis bar Base sensor Positioning mark sensor Heater · Sealed chamber glass upper part Gas inlet automatic control device

-16-

Claims (1)

200421501 ⑴ Pick up and apply for patent scope 1 · A system for electronically connecting soldered wafers, the system includes: a bonding pad; a solder bump; and an energy source that is localized to the solder bump ', where the local energy source is not actually related to The solder bump contacts 'and where the local energy source heats the solder bumps' to resolder the solder bumps onto the bond pads without heating the entire wafer. 2 · The system according to item 1 of the patent application scope, in which the solder bumps are connected to the wiring. 3. The system according to item 2 of the patent application, wherein the solder bumps and wiring are located on the bonding pads, and then the local welding source is used to heat the solder bumps on the bonding pads to form wiring to be bonded to the bonding pads. 4. The system according to item 2 of the patent application scope, wherein the local energy source heats the solder bumps, and then the heated solder bumps and the wiring are located on the bonding pads to form the wiring to be bonded to the bonding pads. 5 · The system according to item 2 of the patent application, wherein the local energy source heats the solder bumps and the bonding pads, and the heated solder bumps are located on the heated bonding pads to form wiring to be bonded to the bonding pads. 6. The system of claim 5, wherein the local energy source includes: the first energy source is localized to the welding bump; and the first energy source is localized to the bonding pad. 7 · If the system of the scope of patent application No. 5, where the local energy source is movable, and where the movable local energy source heats the welding bump, -17- (2) (2) 200421501 and move to the bonding pad to heating. 8. The system according to item 5 of the patent application, further comprising: a wetting layer formed on the bonding pad, wherein the local energy source melts the wetting layer. 9. The system according to item 1 of the scope of patent application, wherein the welding bump is placed on the bonding pad before the local energy source heats the welding bump. 10. The system according to item 9 of the scope of patent application, wherein after the welding bump is heated by the local energy source, the wiring is connected to the welding bump. 1 1. The system according to item 10 of the patent application scope, wherein the local energy source heats the wiring and the solder bump, and then connects the heated wiring with the heated solder bump to form a wiring connection with the bonding pad. 1 2 · The system according to item 11 of the patent application scope, wherein the local energy source includes: the first energy source is localized to the wiring; and the first energy source is localized to the welding bump. 13. The system according to item 11 of the scope of the patent application, wherein the local energy source is movable, and the movable local energy source is heated and routed to a welding bump to be heated. 14. The system according to item 11 of the patent application scope, further comprising: a wetting layer formed on the bonding pad, wherein the local energy source melts the wetting layer. 1 5. The system according to item 1 of the scope of patent application, wherein the bonding pad includes a plurality of bonding pads, and the solder bump includes a plurality of solder bumps. 16. The system according to item 15 of the scope of patent application, wherein the energy source includes -18- (3) (3) 200421501, a plurality of energy sources, wherein each of the plurality of energy sources is localized to a plurality of welding projections Each of the blocks is to heat each of the plurality of solder bumps, and to re-solder each of the plurality of solder bumps to each of the plurality of bonding pads without heating the entire wafer. 17. The system according to item 15 of the scope of patent application, wherein the energy source is movable, wherein the movable energy source is moved between each of the plurality of welding bumps to heat the plurality of welding bumps. Each of the plurality of solder bumps is re-soldered to each of the plurality of bonding pads without heating the entire wafer. 18. The system according to item 15 of the scope of patent application, further comprising: a movable table, wherein the wafer is placed on the movable table, a plurality of solder bumps are placed on a plurality of bonding pads, and the movable table is moved Each welding bump is placed at a position adjacent to the energy source to heat each of the plurality of welding bumps, to re-weld each of the plurality of welding bumps to each of the plurality of bonding pads without The entire wafer is heated. 1 9 · If the system of item 15 of the scope of patent application, including: a positioning system for positioning a plurality of bonding pads. 20 · The system according to item 19 of the scope of patent application, wherein the local energy source is movable, wherein the movable energy source is connected to the positioning system, and where the positioning system provides a plurality of positions of the bonding pads to locate the movable Energy source. 2 1. The system according to item 15 of the scope of patent application, including: a mosaic mask placed between the energy source and the plurality of welding bumps, wherein the mosaic mask includes a plurality of cutouts corresponding to the plurality of welding bumps Area, with -19- (4) (4) 200421501 and the localization of the energy source to each welding bump through each of the plurality of cut-out areas to heat each of the plurality of welding bumps to return Each of the plurality of solder bumps is soldered to each of the plurality of bonding pads without heating the entire wafer. 22. If the system in the scope of patent application No. 21, includes: a heat exchange element, connected to the mosaic mask and maintains the temperature of the mosaic mask. 23. If the system in the scope of patent application No. 1, further includes: a substrate, The wafer is a flip-chip, and the solder bump is placed between the substrate and the flip-chip. 24. The system of claim 23, wherein the bonding pad includes a plurality of bonding pads, and the solder bump includes a plurality of solder bumps. 25. If the system of the scope of application for patent No. 24, further includes: a mosaic mask placed between the energy source and the plurality of welding bumps, wherein the mosaic mask includes a plurality of cut-out areas corresponding to the plurality of welding bumps, And wherein the energy source is localized to each of the welding bumps through each of the plurality of cut-out regions to heat each of the plurality of welding bumps to re-weld each of the plurality of welding bumps to the plurality of welding bumps Bond each of the pads without heating the entire wafer. 26. The system according to item 25 of the patent application, further comprising: a sensor configured to scan the positioning mark on the substrate to position the mosaic mask. 27. If the system of the scope of application for patent No. 25, includes: a movable table, in which the flip chip is placed on the movable table, and the movable table in -20- (5) (5) 200421501 according to the mosaic cover Hood to move the flip chip. 28. The system according to item 27 of the patent application scope, further comprising: a sensor configured to adjust the movement of the substrate according to a flip chip. 2 9. The system according to item 27 of the scope of patent application, including: a heater placed on a movable table to heat the flip chip, wherein the heater heats the flip chip below a plurality of solder bumps on the flip chip The melting point of the block. 30 • The system according to item 25 of the scope of patent application, including: Lu sealed chamber, in which the flip chip is placed in the sealed chamber, and the mosaic mask is placed outside the sealed chamber. 31. The system of claim 30, wherein the sealed chamber includes upper glass components. 3 2. According to the system of claim 30 in the scope of patent application, wherein the sealed chamber is provided with blunt gas, the oxidation of the plurality of welding bumps can be prevented when the plurality of welding bumps are rewelded, and the plurality of welding bumps are in After reflow, the sealed chamber is filled with cooling gas. # 3 3. According to the system of claim 25, wherein the plurality of solder bumps are located on the flip chip and the plurality of bonding pads or solder bumps are located on the substrate, wherein the flip chip is mounted on the flip chip through a mosaic mask. The plurality of solder bumps are heated to a temperature higher than the melting point of the plurality of solder bumps on the flip chip, and when the temperature of the plurality of solder bumps on the flip chip is higher than the plurality of solder bumps on the flip chip At the melting point temperature, the plurality of bonding pads or solder bumps on the substrate are in contact with the solder bumps on the flip chip. -21-(6) (6) 200421501 34. If the system of the scope of application for the patent No. 33, further includes: a movable table, wherein the flip chip is placed on a movable table, wherein the movable table will flip the chip from The first position lower than the mosaic mask is moved to the second position lower than the substrate, wherein when the flip chip is located in the first position, a plurality of solder bumps on the flip chip are heated, and when the flip chip is When in the second position, the plurality of bonding pads or solder bumps on the substrate are in contact with the solder bumps on the flip chip. 3 5 · If the system of item 33 of the patent application scope, wherein the flip chip 隹 remains stationary, in which the inlay mask and the energy source are moved to the flip chip to heat the plurality of solder bumps in the flip chip, And the substrate is moved next to the flip chip so that the plurality of bonding pads or solder bumps on the substrate are in contact with the solder bumps on the flip chip. 3 6 · If the system of the scope of patent application No. 35, it further includes: Automatic loading control device connected to the substrate. 37 • The system according to item 23 of the patent application scope, wherein the substrate is a printed circuit board or card. Rev. 38 · The system according to item 1 of the scope of patent application, further comprising: a layer having a low dielectric constant in the wafer, wherein a bonding pad is placed on the layer. 3 9 · —A method of electronically bonding a solder wafer, the method including the following steps: localizing an energy source to a solder bump without actually contacting the solder bump; and using a local energy source to heat the solder bump, Solder the bumps -22- (7) (7) 200421501 to the bonding pads on the wafer by re-soldering without heating the entire wafer. 40. The method of claim 39 in the scope of patent application, further comprising: before heating the solder bump, positioning the solder bump and wiring on the bonding pad, wherein the local energy source heats the solder bump on the bonding pad to form a wiring connection to Bonding pad. 4 2. The method according to item 40 of the scope of patent application, wherein heating the solder bumps comprises: heating the solder bumps of the connection wiring; and φ positioning the solder bumps of the connection wiring on the bonding pad to form a wiring connection to the bonding pad . 43. The method of claim 40, further comprising: using a local energy source to heat the bonding pads without heating the entire wafer; positioning the heated solder bumps on the heated bonding pads to form wiring connections to the bonding pads. 4 4. The method according to item 43 of the scope of patent application, wherein the local energy source includes: φ the first energy source is localized to the welding bump; and the first energy source is localized to the bonding pad. 45 · The method according to item 43 of the scope of patent application, wherein the local energy source is movable, and further includes: moving the movable local energy source to the welding bump; using the movable local energy source to heat the welding bump; Moving the local energy source to the bonding pad; and heating the bonding pad with the movable local energy source. -23- (8) (8) 200421501 46. If the method of applying for the item 43 of the patent scope, further includes: using a local energy source to melt the wetting layer formed on the bonding pad. 47. The method of claim 39, wherein the welding bump is placed on the bonding pad before the welding bump is heated using a local energy source. 48. The method according to item 47 of the scope of patent application, further comprising: after heating the solder bump using a local energy source, connecting and wiring to the solder bump. 49. The method of claim 48, wherein the local energy source heats the wiring and the solder bump, and then connects the heated wiring with the heated solder bump to form a wiring connection with the bonding pad. 50. The method of claim 49, wherein the local energy source includes: localizing the first energy source to the wiring; and localizing the first energy source to the solder bump. 51. The method according to item 49 of the scope of patent application, wherein the local energy source is movable, and further includes: moving the movable local energy source to the wiring; heating the wiring using the movable local energy source; moving the movable local energy Source to the solder bump; and use a movable local energy source to heat the solder bump. 52. The method according to item 49 of the patent application, further comprising: using a local energy source to melt a wetting layer formed on the bonding pad. 53. The method of claim 39, wherein the bonding pad includes a plurality of bonding pads, and the solder bump includes a plurality of solder bumps. -24- (9) (9) 200421501 5 4 · The method according to item 53 of the patent application range, wherein the local energy source includes a plurality of energy sources, and each of the plurality of energy sources is localized to a plurality of welds Each of the bumps is to heat each of the plurality of solder bumps, and to resolder each of the plurality of solder bumps to each of the plurality of bonding pads without heating the entire wafer. 5 5 · The method according to item 53 of the patent application range, wherein the local energy source is movable, and the movable energy source is moved between each of the plurality of welding bumps to heat the plurality of welding bumps. Each of the plurality of soldering bumps is soldered to each of the plurality of bonding pads without heat by heating the entire wafer. 56. The method according to item 53 of the patent application, which includes: using a movable table to move the wafer so that each welding bump is placed at an adjacent energy source to heat each of the plurality of welding bumps to return Each of the plurality of solder bumps is soldered to each of the plurality of bonding pads without heating the entire wafer. 5 7. The method according to item 53 of the patent application scope, further comprising: φ positioning a plurality of bonding pads using a positioning system. 5 8 · The method according to item 57 of the scope of patent application, wherein the local energy source is movable, wherein the movable energy source is connected to the positioning system, and where the positioning system provides a plurality of positions of the bonding pads to locate the movable Energy source. 59. The method according to item 53 of the scope of patent application, wherein localizing the energy source includes: through each of a plurality of cut regions in a mosaic mask, enabling -25 · (10) (10) 200421501 The source is localized to each solder bump to heat each of the plurality of solder bumps, and back solder each of the plurality of solder bumps to each of the plurality of bonding pads without heating the entire wafer. . 60. The method of claim 59, further comprising: using a heat exchange element to maintain the temperature of the mosaic mask. 61. The method of claim 39, wherein the wafer is a flip chip, and wherein the solder bump is placed between the substrate and the flip chip. 6 2. The method of claim 61, wherein the bonding pad includes a plurality of bonding pads, and the solder bump includes a plurality of solder bumps. 63. The method according to item 62 of the patent application scope, wherein localizing the energy source includes: localizing the energy source to each welding bump through each of the plurality of cut-out regions in the mosaic mask, so that Each of the plurality of solder bumps is heated to re-solder each of the plurality of solder bumps to each of the plurality of bonding pads. 64 · If the method of the scope of patent application 63, the method includes: # Scan the positioning mark on the substrate with a sensor to locate the mosaic mask. 65 · If the system of the scope of the patent application 63 method, the method includes: The mobile table moves the flip chip relatively according to the mosaic mask, wherein the flip chip is placed on the movable table. 66. If the method according to item 65 of the patent application, the method further comprises: using a sensor to relatively adjust the movement of the substrate according to the flip chip. 67. If the method of applying for item 65 of the patent scope includes: -26- (11) (11) 200421501 Use a heater placed on a movable table to heat the flip chip below a number of The melting point temperature of the solder bump. 68. The method of claim 63, wherein the flip chip is placed in a sealed chamber, and the mosaic mask is placed outside the sealed chamber. 69. The method of claim 68, wherein the sealed chamber includes a glass upper part. 7 〇. The method according to item 68 of the patent application scope, further comprising: 'introducing passivated gas into the sealed chamber before the plurality of welding bumps have been re-welded to prevent oxidation of the plurality of welding bumps; and After the bumps have been re-soldered, the cooling gas is introduced into the sealed chamber. 7 1. The method of item 63 of the patent application, wherein heating the solder bumps includes: through a mosaic mask, welding a plurality of flip-chip wafers The bumps are heated above the melting point temperature of the plurality of solder bumps on the flip chip; and when the temperature of the plurality of solder bumps on the flip chip is higher than the melting temperature of the plurality of solder bumps on the flip chip, A plurality of bonding pads or solder bumps on the substrate are contacted with a plurality of solder bumps on the flip chip. 72. The method according to item 71 of the patent application, further comprising: using a movable table to move the flip chip from a first position lower than the mosaic mask to a second position lower than the substrate, wherein when the flip chip is located at In the first position, the plurality of solder bumps on the flip chip are heated, and when the flip chip is in the second position, the plurality of bonding pads or solder bumps on the substrate and the plurality of solder bumps on the flip chip are heated. The solder bumps are in contact. -27- (12) (12) 200421501 73. The method of claim 71 in the scope of patent application, including: keeping the flip-chip still; moving the mosaic mask and energy source beside the flip-chip to heat the flip-chip A plurality of solder bumps in the wafer; and moving the substrate to the flip chip so that the plurality of bonding pads or solder bumps on the substrate are in contact with the solder bumps on the flip chip. 7 4. The method according to item 73 of the patent application scope, wherein the substrate is moved using a loading automatic control device connected to the substrate. 7 5. The method according to item 61 of the patent application, wherein the substrate is a printed circuit board or card. 76. The method according to item 39 of the patent application scope, further comprising: a layer having a low dielectric constant in the wafer, wherein the bonding pad is placed on the layer. -28-