CN105514248A - High white light and low light decay LED and preparation method thereof - Google Patents
High white light and low light decay LED and preparation method thereof Download PDFInfo
- Publication number
- CN105514248A CN105514248A CN201610002925.9A CN201610002925A CN105514248A CN 105514248 A CN105514248 A CN 105514248A CN 201610002925 A CN201610002925 A CN 201610002925A CN 105514248 A CN105514248 A CN 105514248A
- Authority
- CN
- China
- Prior art keywords
- square groove
- led
- upper strata
- lower floor
- square
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000004593 Epoxy Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 13
- 238000004806 packaging method and process Methods 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 12
- 229920002379 silicone rubber Polymers 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 241000218202 Coptis Species 0.000 claims description 9
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 5
- 239000000084 colloidal system Substances 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004643 material aging Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention discloses a high white light and low light decay LED and a preparation method thereof. The LED comprises a square LED rack which is internally provided with square grooves; the square grooves are divided into an upper layer and a lower layer, wherein the edges of the lower layer square groove and the upper layer square groove form a square step; four cylindrical holes are respectively arranged at four corners of the upper layer square groove; the bottom surface of the cylindrical holes are parallel with the bottom surface of the upper layer square groove; the cylindrical holes are provided with notches which are in communication with the upper layer square groove; the bottom of the cylindrical holes are provided with small cylindrical holes which are in communication with corners of the lower layer square groove. The high white light and low light decay LED solves the problems of LED white light yellow circle as well as LED white light brightness decay.
Description
Technical field
The present invention relates to LED field, relate to a kind of high white light low light attenuation LED and preparation method thereof specifically.
Background technology
Light-emitting diode (LED) is a kind of semiconductor light sources, and LED has lot of advantages compared with other light source such as incandescent lamp, and LED has longer life-span, preferably stability, faster switching characteristic and lower energy consumption usually.Along with LED to go deep into the life of people day by day as light source of new generation, its application is also more and more extensive.In synthesize white light, the most frequently used mode places material for transformation of wave length in the LED wafer of blue light-emitting, such as yellow fluorescent powder, material for transformation of wave length layer in LED wafer can absorb the photon that some LED send, and they are changed the light that (down-convert) is visible wavelength downwards, thus produce the double-colored light source with blue and yellow wavelengths light.If the gold-tinted produced and blue light have correct ratio, so human eye can experience white light.
In the prior art, the packaging technology of LED generally comprises the steps such as die bond, bonding wire, gluing, baking, wherein fluorescent material is blended in silica gel by glue application step usually according to a certain percentage, with crossing spot gluing equipment, the mixture of fluorescent material and glue is coated in LED wafer, but, the problem of fluorescent material sedimentation is easily there is in Large stone fluorescent material in a glue process, make the skewness of fluorescent material in colloid, causing the white light LEDs encapsulated out to occur misalignment thus, is exactly usually said Huang circle phenomenon.In other technical scheme, gluing also can by the very uniform phosphor powder layer of guarantor's type paint-on technique LED wafer surface-coated, but, because the luminous intensity of blue LED wafers itself has the feature of non-equivalence for the coating of guarantor's type in the distribution in space, the blue light that intensity level is larger is short by the distance of fringe region phosphor powder layer by the distance ratio of central area phosphor powder layer, cause that central area color temperature value is high thus and fringe region color temperature value is low, there will be the problem of misalignment equally.And phosphor substance major part concentrates on bottom rack groove and LED chip annex, being heated for a long time there will be brightness decay, affects the LED life-span.
Traditional White-light LED package structure schematic diagram as shown in Figure 1, traditional white light LEDs is arranged in the bowl cup of the first support 12 by the first LED chip 11, be connected with the first support 12 pin realizing circuit by the first gold thread 13, then packing colloid 14 in the first LED chip 11 surface coverage, packing colloid 14 is general by exciting yellow wavelengths fluorescent material and packaging plastic to mix, and adds exciting orange red or green wavelength fluorescent material sometimes.After fluorescent material absorption portion blue light, discharge the gold-tinted that wavelength is longer, then unabsorbed blue light becomes white light with yellow light mix.White light LEDs mixed light is even not, and brightness is also lower, and phosphor substance major part concentrates on bottom rack groove and LED chip annex, is heated for a long time and there will be brightness decay, affect the LED life-span.
Summary of the invention
For deficiency of the prior art, the technical problem to be solved in the present invention there are provided a kind of high white light low light attenuation LED and preparation method thereof.
For solving the problems of the technologies described above, the present invention is realized by following scheme: a kind of high white light low light attenuation LED, described LED comprises LED support, described LED support is square, have square groove therein, this square groove divides two-layer up and down, the edge of lower floor's square groove and upper strata square groove forms a square step, in four bights of upper strata square groove, a cylindrical hole is respectively set, the bottom surface of this cylindrical hole is equal with the bottom surface of upper strata square groove, and this cylindrical hole has a breach, this breach is communicated with upper strata square groove, the bottom surface of described cylindrical hole has a cylinder aperture, this cylinder aperture is communicated to the bight of lower floor's square groove, the center of described lower floor's square groove bottom surface, be fixed with LED chip, the electrode of described LED chip and the both positive and negative polarity of LED support are coupled together by gold thread, on the square groove of upper strata, be fixed with epoxy sheet, in lower floor's square groove cavity of epoxy sheet bottom, be filled with packaging silicon rubber, and this packaging silicon rubber is filled in the cylinder aperture of cylindrical hole and cylindrical hole bottom, described epoxy sheet lower floor scribbles phosphor powder layer.
With a preparation method of high white light low light attenuation LED, the method comprises the following steps:
1), select square LED support, this LED support is opened two square grooves, this square groove divides two-layer up and down, and lower floor's square groove communicates with upper strata square groove, forms a square step at two square groove edges;
2), in four bights of upper strata square groove, respectively arrange a cylindrical hole, the bottom surface of this cylindrical hole is equal with the bottom surface of upper strata square groove, and this cylindrical hole has a breach, and this breach is communicated with upper strata square groove;
3), the bottom surface of cylindrical hole has a cylinder aperture, and this cylinder aperture is communicated to the bight of lower floor's square groove, also cylinder aperture can be communicated to the bottom of lower floor's square groove;
4), after, by epoxy resin powder adding fluorescent material uniform stirring, after being molded into cake shape, the epoxy sheet corresponding with upper strata square groove size is cut into;
5), in the square groove bottom center of lower floor of LED support locate die bond bonding wire, LED chip is arranged on square groove bottom center of the lower floor position of LED support, then the electrode of LED chip and the both positive and negative polarity of LED support are coupled together by gold thread;
6), the epoxy sheet after round pie that is molded in step 4) is placed on the square step at square groove place, upper strata;
7), fill lower floor's square groove cavity of epoxy sheet bottom by liquid packaging silicon rubber by four cylindrical holes, cylinder aperture, and four cylindrical holes, cylinder aperture are filled;
8), to LED support carry out flanging, with fixing epoxy sheet, after liquid packaging silicon rubber solidifies completely, encapsulation completes.
Relative to prior art, the invention has the beneficial effects as follows: height white light low light attenuation LED structure of the present invention solves the yellow circle problem of LED white light, with the problem solving the decay of LED white brightness.
Accompanying drawing explanation
Fig. 1 is White-light LED package structure schematic diagram of the prior art.
Fig. 2 is LED support structural representation of the present invention.
Fig. 3 is LED support side sectional view of the present invention.
Fig. 4 is LED preparation method step 5 schematic diagram of the present invention.
Fig. 5 is LED preparation method step 6 schematic diagram 1 of the present invention.
Fig. 6 is LED preparation method step 6 schematic diagram 2 of the present invention.
Fig. 7 is LED preparation method step 7 schematic diagram of the present invention.
Fig. 8 is LED preparation method step 8 schematic diagram of the present invention.
Mark in accompanying drawing: the first LED chip 11, first support 12, first gold thread 13, packing colloid 14, LED support 1, square step 2, cylindrical hole 3, gold thread 4, LED chip 5, epoxy sheet 6.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
Please refer to accompanying drawing 2 ~ 4, a kind of high white light low light attenuation LED of the present invention, described LED comprises LED support 1, it is characterized in that: described LED support 1 is for square, have square groove therein, this square groove divides two-layer up and down, the edge of lower floor's square groove and upper strata square groove forms a square step 2, in four bights of upper strata square groove, a cylindrical hole 3 is respectively set, the bottom surface of this cylindrical hole is equal with the bottom surface of upper strata square groove, and this cylindrical hole 3 has a breach, this breach is communicated with upper strata square groove, the bottom surface of described cylindrical hole 3 has a cylinder aperture, this cylinder aperture is communicated to the bight of lower floor's square groove, the center of described lower floor's square groove bottom surface, be fixed with LED chip 5, the electrode of described LED chip 5 and the both positive and negative polarity of LED support 1 are coupled together by gold thread 4, on the square groove of upper strata, be fixed with epoxy sheet 6, in lower floor's square groove cavity of epoxy sheet 6 bottom, be filled with packaging silicon rubber 14, and this packaging silicon rubber 14 is filled in the cylinder aperture of cylindrical hole 3 and cylindrical hole 3 bottom, described epoxy sheet 6 lower floor scribbles phosphor powder layer.
Embodiment:
The preparation method of high white light low light attenuation LED of the present invention, the method comprises the following steps:
1, as shown in Figure 2, select square LED support, this LED support is opened two square grooves, this square groove divides two-layer up and down, lower floor's square groove communicates with upper strata square groove, form a square step 2 at two square groove edges, the height of lower floor's square groove and upper strata square groove is according to actual LED chip power decision.
2, as shown in Figure 3, in four bights of upper strata square groove, respectively arrange a cylindrical hole 3, the bottom surface of this cylindrical hole is equal with the bottom surface of upper strata square groove, and this cylindrical hole 3 has a breach, and this breach is communicated with upper strata square groove;
3, as shown in Figure 3, the bottom surface of cylindrical hole 3 has a cylinder aperture, and this cylinder aperture is communicated to the bight of lower floor's square groove, also cylinder aperture can be communicated to the bottom of lower floor's square groove;
4, after epoxy resin powder being added fluorescent material uniform stirring, after being molded into cake shape, cutting into the epoxy sheet corresponding with upper strata square groove size, and scribble phosphor powder layer in the one side of epoxy sheet;
5, as shown in Figure 4, at square groove bottom center of lower floor place's die bond bonding wire of LED support 1, LED chip 5 is arranged on square groove bottom center of the lower floor position of LED support 1, then the both positive and negative polarity of the electrode of LED chip 5 and LED support 1 is coupled together by gold thread 4;
6, as shown in Figure 5, the epoxy sheet after round pie that is molded in step 4 is placed on the square step 2 at square groove place, upper strata;
7, as shown in fig. 6-7, liquid packaging silicon rubber 14 is filled lower floor's square groove cavity of epoxy sheet bottom by four cylindrical holes 3, cylinder aperture, and four cylindrical holes 3, cylinder aperture are filled;
8, as shown in Figure 8, carry out flanging to LED support 1, with fixing epoxy sheet, after liquid packaging silicon rubber 14 solidifies completely, encapsulation completes.
Height white light low light attenuation LED structure of the present invention solves the yellow circle problem of LED white light, with the problem solving the decay of LED white brightness.
The foregoing is only the preferred embodiment of the present invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (2)
1. one kind high white light low light attenuation LED, described LED comprises LED support (1), it is characterized in that: described LED support (1) is for square, have square groove therein, this square groove divides two-layer up and down, the edge of lower floor's square groove and upper strata square groove forms a square step (2), in four bights of upper strata square groove, a cylindrical hole (3) is respectively set, the bottom surface of this cylindrical hole is equal with the bottom surface of upper strata square groove, and this cylindrical hole (3) has a breach, this breach is communicated with upper strata square groove, the bottom surface of described cylindrical hole (3) has a cylinder aperture, this cylinder aperture is communicated to the bight of lower floor's square groove, the center of described lower floor's square groove bottom surface, be fixed with LED chip (5), the electrode of described LED chip (5) and the both positive and negative polarity of LED support (1) are coupled together by gold thread (4), on the square groove of upper strata, be fixed with epoxy sheet (6), in lower floor's square groove cavity of epoxy sheet (6) bottom, be filled with packaging silicon rubber (14), and this packaging silicon rubber (14) is filled in the cylinder aperture of cylindrical hole (3) and cylindrical hole (3) bottom, described epoxy sheet (6) lower floor scribbles phosphor powder layer.
2., with a preparation method of high white light low light attenuation LED according to claim 1, it is characterized in that, the method comprises the following steps:
1), select square LED support, this LED support is opened two square grooves, this square groove divides two-layer up and down, and lower floor's square groove communicates with upper strata square groove, forms a square step (2) at two square groove edges;
2), in four bights of upper strata square groove, respectively arrange a cylindrical hole (3), the bottom surface of this cylindrical hole is equal with the bottom surface of upper strata square groove, and this cylindrical hole (3) has a breach, and this breach is communicated with upper strata square groove;
3), the bottom surface of cylindrical hole (3) has a cylinder aperture, and this cylinder aperture is communicated to the bight of lower floor's square groove, also cylinder aperture can be communicated to the bottom of lower floor's square groove;
4), after, by epoxy resin powder adding fluorescent material uniform stirring, after being molded into cake shape, cutting into the epoxy sheet corresponding with upper strata square groove size, and scribble phosphor powder layer in the one side of epoxy sheet;
5), at square groove bottom center of lower floor place's die bond bonding wire of LED support (1), LED chip (5) is arranged on square groove bottom center of the lower floor position of LED support (1), then the both positive and negative polarity of the electrode of LED chip (5) and LED support (1) is coupled together by gold thread (4);
6), the epoxy sheet after round pie that is molded in step 4) is placed on the square step (2) at square groove place, upper strata;
7), fill lower floor's square groove cavity of epoxy sheet bottom by liquid packaging silicon rubber (14) by four cylindrical holes (3), cylinder aperture, and four cylindrical holes (3), cylinder apertures are filled;
8), to LED support (1) carry out flanging, with fixing epoxy sheet, after liquid packaging silicon rubber (14) solidifies completely, encapsulation completes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610002925.9A CN105514248A (en) | 2016-01-06 | 2016-01-06 | High white light and low light decay LED and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610002925.9A CN105514248A (en) | 2016-01-06 | 2016-01-06 | High white light and low light decay LED and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105514248A true CN105514248A (en) | 2016-04-20 |
Family
ID=55722077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610002925.9A Pending CN105514248A (en) | 2016-01-06 | 2016-01-06 | High white light and low light decay LED and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105514248A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206756A (en) * | 2016-09-30 | 2016-12-07 | 深圳成光兴光电技术股份有限公司 | A kind of photosensitive tube and optical filter combination encapsulating structure and processing technique thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101576212A (en) * | 2008-09-05 | 2009-11-11 | 佛山市国星光电股份有限公司 | LED strip light source and package method thereof |
| US20100044726A1 (en) * | 2008-08-22 | 2010-02-25 | Qing Li | Method for Packaging White-Light LED and LED Device Produced Thereby |
| CN201430161Y (en) * | 2009-06-17 | 2010-03-24 | 宁波升谱光电半导体有限公司 | LED device package structure |
| CN102214770A (en) * | 2010-04-09 | 2011-10-12 | 海洋王照明科技股份有限公司 | Light-emitting diode (LED) planar light source support and light-emitting diode (LED) planar light source with same |
| CN202662664U (en) * | 2012-05-15 | 2013-01-09 | 东莞市凯昶德电子科技股份有限公司 | Improved LED (Light Emitting Diode) bracket and copper plate bracket thereof |
| CN102891235A (en) * | 2011-07-20 | 2013-01-23 | 山东华光光电子有限公司 | High-output low-attenuation white light LED (light emitting diode) and manufacturing method thereof |
| CN205264754U (en) * | 2016-01-06 | 2016-05-25 | 宏齐光电子(深圳)有限公司 | High white light hangs down light decay LED |
-
2016
- 2016-01-06 CN CN201610002925.9A patent/CN105514248A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100044726A1 (en) * | 2008-08-22 | 2010-02-25 | Qing Li | Method for Packaging White-Light LED and LED Device Produced Thereby |
| CN101576212A (en) * | 2008-09-05 | 2009-11-11 | 佛山市国星光电股份有限公司 | LED strip light source and package method thereof |
| CN201430161Y (en) * | 2009-06-17 | 2010-03-24 | 宁波升谱光电半导体有限公司 | LED device package structure |
| CN102214770A (en) * | 2010-04-09 | 2011-10-12 | 海洋王照明科技股份有限公司 | Light-emitting diode (LED) planar light source support and light-emitting diode (LED) planar light source with same |
| CN102891235A (en) * | 2011-07-20 | 2013-01-23 | 山东华光光电子有限公司 | High-output low-attenuation white light LED (light emitting diode) and manufacturing method thereof |
| CN202662664U (en) * | 2012-05-15 | 2013-01-09 | 东莞市凯昶德电子科技股份有限公司 | Improved LED (Light Emitting Diode) bracket and copper plate bracket thereof |
| CN205264754U (en) * | 2016-01-06 | 2016-05-25 | 宏齐光电子(深圳)有限公司 | High white light hangs down light decay LED |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206756A (en) * | 2016-09-30 | 2016-12-07 | 深圳成光兴光电技术股份有限公司 | A kind of photosensitive tube and optical filter combination encapsulating structure and processing technique thereof |
| CN106206756B (en) * | 2016-09-30 | 2018-03-02 | 深圳成光兴光电技术股份有限公司 | A kind of photosensitive tube combines encapsulating structure and its processing technology with optical filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101639164B (en) | Highly stable enhanced colour rendering LED light source module | |
| CN101661987A (en) | White light LED packaging structure and packaging method thereof | |
| CN103489984B (en) | Package structure for LED and preparation method thereof | |
| CN105633248B (en) | LED lamp and preparation method thereof | |
| CN106783821A (en) | The full-spectrum LED encapsulating structure and its method for packing of a kind of unstressed configuration powder | |
| CN103489996A (en) | White light LED packing process | |
| TW201143160A (en) | Light-emitting device | |
| CN103050615B (en) | A kind of White LED with high color rendering property device | |
| CN104282676A (en) | Integrated LED lamp panel packaging structure and technology | |
| CN102097549A (en) | Chip scale integration packaging process and light emitting diode (LED) device | |
| CN102282687B (en) | Led packaging enabling light emitting with uniform colors | |
| CN106505138B (en) | LED packaging structure and preparation method thereof | |
| CN108899311A (en) | A kind of LED light source manufacturing method | |
| CN205264754U (en) | High white light hangs down light decay LED | |
| CN102800785A (en) | Separating dimmable surface-mounted light emitting diode (SMDLED) incandescent lamp | |
| CN105514248A (en) | High white light and low light decay LED and preparation method thereof | |
| CN105336835A (en) | LED packaging structure and packaging method thereof | |
| CN103579460B (en) | A kind of high-brightness white-light LED and manufacture method thereof | |
| CN208256718U (en) | A kind of encapsulating structure of LED | |
| CN205159358U (en) | LED packaging structure | |
| EP2416359A2 (en) | Warm white light led lamp with high luminance and high color rendering index | |
| CN203415624U (en) | White LED with high color rendering index | |
| CN106025047A (en) | LED Package and packaging method thereof | |
| CN206401357U (en) | Gao Se areas centrality white-light LED encapsulation | |
| CN205504495U (en) | LED lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |