CN105467533A - 具有磁场抵消的光电子封装件 - Google Patents

具有磁场抵消的光电子封装件 Download PDF

Info

Publication number
CN105467533A
CN105467533A CN201510624188.1A CN201510624188A CN105467533A CN 105467533 A CN105467533 A CN 105467533A CN 201510624188 A CN201510624188 A CN 201510624188A CN 105467533 A CN105467533 A CN 105467533A
Authority
CN
China
Prior art keywords
trace
mould
die
top surface
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510624188.1A
Other languages
English (en)
Other versions
CN105467533B (zh
Inventor
R·帕萨
W·弗兰茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN105467533A publication Critical patent/CN105467533A/zh
Application granted granted Critical
Publication of CN105467533B publication Critical patent/CN105467533B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/24—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/26—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping
    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
    • G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/171—Disposition
    • H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/17181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Packages (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)

Abstract

本申请公开一种层叠光电子封装设备(100)，其包括具有顶表面的底模(251)，该顶表面包括底部电迹线(356、359、361、358)和耦合到至少一个底部电迹线的光源模(180)。第一腔模(252)位于底模上。光学器件模(321a)位于第一腔模上且第二腔模(328)位于光学器件模上。安装基板(351)位于包括顶部电迹线(378、379)的第二腔模(328)上。光电探测器模(110)光学地耦合以便从光源接收光。底部和顶部电迹线均大致对称地定位在镜平面(105)的侧面上，使得当传导相等且相反的电流时，源于第一侧的第一磁场以及源于第二侧的第二磁场彼此抵消，以在光学器件模上的一个或多个模位置处提供超过50％的磁通密度减少。

Description

具有磁场抵消的光电子封装件
相关申请的交叉引用
本申请要求于2014年9月26日提交的题为“Microfabricatedatomicclocks(MFAC)&magnetometers(MFAM):highvolumemanufactural(HVM)magneticcharacterization(微加工原子钟(MFAC)和磁力计(MFAM)：大体积制造(HVM)磁特征)”的美国临时专利申请序列号62/055,827的权益，其通过引用全部并入本文。
技术领域
所公开的实施例涉及层叠光电子封装件，其实现光泵浦传感器或基准件，诸如MFAC和MFAM。
背景技术
多种光电子设备为封装设备，其包括光电探测器(PD)以及在真空下操作的至少一个光源。常规MFAC和MFAM封装件包括在封装材料内部垂直层叠的结构，其包括作为具有电迹线的支撑件的底模/底部管芯(bottomdie)以及安装于其上的至少一个光源模(die)(例如，激光器模诸如垂直腔表面发射激光器(VCSEL))，在光源上方提供腔室的在底模上的第一腔模，以及在第一腔模上的光学器件模。
在底模上的电迹线连接驱动所述光源的外部驱动器，并且包括被配置用作电阻式加热器元件的迹线，诸如提供热量以将光源模加热到大约60℃到80℃的温度。第二腔模位于光学器件模上，其他光学设备(例如，偏光器)位于第二腔模上，并且光电探测器(PD)模位于其他光学设备上方的介电基板上。该封装件为真空密封的封装件。
发明内容
本发明内容被提供用于以简化形式介绍下面在包括所提供的附图的具体实施方式中进一步描述的所公开的概念的简要选择。本发明内容不旨在限制要求保护的主题的范围。
一种层叠光电子封装件包括底模/底部管芯(bottomdie)和光源模，其中底模具有包括底部电迹线的顶表面，并且光源模耦合到至少一个底部电迹线。第一腔模在底模上。光学器件模在第一腔模上并且第二腔模在光学器件模上。第二安装基板在第二腔模上并且在其上包括顶部电迹线。光电探测器模被光学地耦合以便从光源接收光。底部和顶部电迹线在XZ镜平面的侧面上均大致对称地定位在XY平面表面上，以便当相反地偏置时传导相等且相反的电流，以使源于第一侧的第一磁场和源于第二侧的第二磁场在Z方向上彼此抵消，从而在光学器件模上的一个或多个模位置处提供超过50％的磁通密度减少。
附图说明
现在将参考附图，这些附图不必按比例绘制，其中：
图1A为根据示例实施例的示例层叠光电子封装设备的横截面图，所述层叠光电子封装设备在封装件中的光学器件模上方的第二安装基板和下方的底模的镜平面的相对侧上具有至少大致对称的电迹线布置，使得当这些迹线被相反地偏置时，它们在镜平面的各个侧上传导相等且相反的电流，以提供光学器件模的磁场抵消并因此提供噪音消减。
图1B为根据示例实施例的示例层叠光电子封装设备连同键合线的横截面图，所述层叠光电子封装设备在包括多个层级的两个不同迹线上具有大致对称的电迹线布置，使得当被相反地偏置以传导相等且相反的电流时，二者提供磁场抵消，并且键合线被示出用于使第二安装基板上的电迹线与每侧的底模上的电迹线短路。
图2为根据示例实施例的示例模的描绘，所述示例模在至少一个模的表面上具有大致对称布置的第一和第二电迹线，使得当被相反地偏置以传导相同且相反的电流时，在Z方向上提供磁场抵消。
图3为根据示例实施例的示例封装层叠光电子设备，其在模的表面上包括所公开的大致对称布置的第一和第二电迹线，使得当被相反地偏置以传导相等且相反的电流时，在Z方向上提供磁场抵消。
具体实施方式
参考附图描述示例实施例，其中相同的符图标记用于指示类似或等效的元件。由于一些动作或事件可以以不同的顺序发生以及/或者与其他动作或事件同时发生，因此所示出的动作或事件的顺序不应被理解为是限制性的。此外，实施根据本公开的方法可能不需要一些示出的动作或事件。
对于层叠光电子封装件诸如微加工原子钟(MFAC)和磁力计(MFAM)以及运动传感器设备，在操作期间，在光源的加热器和驱动器以及在光源上方通常容纳碱金属蒸汽的上部腔室的加热器的电迹线中流动的电流被认识到导致磁场感应的噪音(电磁干扰，EMI)，其可显著地降低设备的性能诸如灵敏度。所公开的实施例包括使得在包括沿光学器件模表面的Z(高度)方向上引入的磁场最小化的光电子封装件，该最小化由封装件中的光学器件模上方的模/基板和下方的模/基板的镜平面的相对侧上的电迹线的至少大致对称布置来提供。当被相反地偏置时，在镜平面的相应侧上提供相等且相反的电流，已认识到该布局在光学器件模上提供磁场抵消并因此提供噪音消减。
图1A为根据示例实施例的示例层叠光电子封装设备(封装设备)100的横截面图，所述层叠光电子封装设备100在封装件中的光学器件模321a上方的第二安装基板351和下方的底模251两者的XZ镜平面(镜平面)105的相对侧上具有至少大致对称布置的电迹线，使得当被相反地偏置时，传导相等且相反的电流以提供光学器件模321a的磁场抵消并因此提供噪音消减。尽管在图1A和图1B中未示出，每个电迹线包括通常在模或基板的周边(边缘)上的键合焊盘，以允许与其进行电连接(参见以下所描述的图2)。迹线通常包括金属或金属合金，诸如铝或铂。
当在XY平面上的电流传导迹线上方或下方的Z方向上移动距离(z)时，已知的是磁场强度下降为1/z。所公开的实施例认识到，当XY平面上的电迹线相对于镜平面(诸如镜平面105)的两侧大致对称地定位，并且被相反地偏置以使得镜平面的一侧上的电迹线的电流相对于流过镜平面的另一侧上的电迹线的电流以相等的幅值和相反的方向流动，由于源于相应侧的磁场的磁场抵消，因此在相应电迹线之间的XY平面上方或下方的Z方向上的距离z处的磁通密度可以被很大程度地抵消(并因此减小)。
封装设备100包括封装件内的多个层叠部件，所述封装件包括封装材料，其具有为封装件提供侧壁和底壁的封装主体171以及用于密封封装件的顶部的盖子174。多个层叠部件包括在封装件的底壁上的底模/管芯(die)251，该底模具有顶表面，该顶表面包括多个底部电迹线，所述多个底部电迹线被显示为驱动器迹线359和361以及每个实施电阻式加热元件的加热器迹线356和358，并且还包括耦合到驱动器迹线359和361的用于发射光的光源模/管芯(die)180，所述驱动器迹线359和361分别通过键合线181和182向光源模180的电极提供电偏置。以下描述的图2中示出示例加热器迹线布局。
具有顶表面和底表面的第一腔模252位于底模251的顶表面上。光学器件模321a位于第一腔模252的顶表面上，并且光学透明的密封件或模片材(密封模，用于腔密封)321b位于光学器件模321a上。第二腔模328位于密封模321b上。
第二安装基板351具有包括多个顶部电迹线的顶表面，所述多个顶部电迹线被显示为每个实施电阻式加热元件的加热器迹线378和379。光电探测器(PD)模110被光学地耦合以便接收源自光源180的光，其在图1A中被显示为处于视线位置。
镜平面105在图1A中被显示为正交于全部沿XY平面取向的封装设备100的各种模来取向。驱动器迹线359、加热器迹线356和加热器迹线378全部被显示为在镜平面105的第一侧上，而驱动器迹线361、加热器迹线358和加热器迹线379全部在镜平面105的第二侧上。因此，当被电源相反地偏置以在驱动器迹线359和361、加热器迹线356和358以及加热器迹线378和379中传导相等且相反的电流时，源于镜平面105的第一侧的第一磁场以及源于镜平面105的第二侧的第二磁场彼此抵消，以便在光学器件模321a上的一个或多个模位置处提供超过50％的磁通密度减少。
例如，假设在光学器件模的中心处的操作期间，源于第一侧的第一磁通密度B为x牛-米每安培(Nm/A)或特斯拉(T)，并且源于第二侧的第二磁通密度B为0.9xT。50％的磁通密度减少意味着光学器件模的中心处的净余B小于0.5T。如上所述，磁场抵消为光学器件模321a提供噪音消减，从而导致封装设备100的改善性能。
图1B为根据示例实施例的示例层叠光电子封装设备160的横截面图，所述层叠光电子封装设备160在封装件中的光学器件模321a上方的第二安装基板351以及下方的底模251两者的镜平面105的相对侧上具有至少大致对称布置的电迹线，使得当在镜平面105的相应侧面上被相反地偏置时，为光学器件模321a提供磁场抵消并因此提供噪音消减。电迹线136在第二安装基板351的第一侧上且电迹线137在第二安装基板351的第二侧上，并且电迹线359和加热器迹线356在底模251的第一侧上，而电迹线361和加热器迹线358在底模251的第二侧上。
由于电迹线136、137可以为加热元件提供布线(routing)，所述布线还使得能够在DC加热信号的顶上添加RF信号，以便在需要将第二腔模328放置在已知磁场内的诸如MFAC的应用中生成内部磁场，因此它们被标记为“加热器+驱动器”。电迹线359和361为分离的迹线，用于将光源180从外部驱动器源偏置到光源180的键合焊盘。
键合线196和197被包括在内以使得底模251上的加热器迹线356与第二安装基板351上的电迹线136之间短路，并使得底模251上的加热器迹线358与第二安装基板351上的电迹线137之间短路。键合线196和197还提供围绕设备的基本上完整的回路，以便通过单一的一对偏置信号抵消第二腔中的磁场，并且如上所述在需要的情况下还可选择地通过所施加的RF偏置向电迹线136、137施加RF信号。该布局可以与具有用于顶部和底部加热元件的电隔离的分离迹线的已知方法进行比较。
图2是根据示例实施例的示例模200的图示，所述示例模200包括基板205，该基板205在镜平面105的相对的第一侧和第二侧上具有大致对称布置的电迹线的简化示例，使得当被相反地偏置以在镜平面105的相应侧面上提供相同且相反的电流时，在上方或下方的Z方向上提供磁场抵消。如图所示，在第一侧上存在电迹线211、212和213以及键合焊盘216和217，并且在第二侧上存在电迹线221、222和223以及键合焊盘226和227。电迹线211、212和213以及电迹线221、222和223可被看作是彼此关于镜平面105的镜像。电迹线211、212和213可以提供第一加热元件，并且电迹线221、222和223可以提供第二加热元件，诸如用于在第二安装基板351上提供加热器迹线378和379，如图1A所示。
键合焊盘216和227在图2中被标注为高(H)压键合焊盘，而键合焊盘217和226被标注为低(L)压键合焊盘。例如，向作为接地的键合焊盘216和227以及键合焊盘217和226施加5V电压可以用于加热，同时在电迹线211、212和213以及电迹线221、222和223之间的区域中提供基板205上方或下方的Z方向上的磁场抵消。
各个迹线的宽度在图2中被显示为随着更加靠近模200的中心而减小，其中迹线213宽于迹线211和212，并且迹线223宽于迹线221和222。这种布置导致更少的电流流过靠近模的中心的迹线，从而导致产生更少的磁场并因此在第二腔模328的中间生成更少的噪音。
图3是根据示例实施例的示例封装层叠光电子设备(封装光电子设备)300，其在封装件中的至少一个模的表面上包括所公开的大致对称布置的第一和第二电迹线，使得当被相反地偏置以传导相等且相反的电流时，在Z方向上提供磁场抵消。已封装的光电子设备300包括在底模251上的第一腔模252，所述底模251在其顶表面上具有带有关联键合焊盘155和159的电迹线359以及带有关联键合焊盘156和158的电迹线361。尽管未示出，但在底模251上可以存在类似于图1A中所示的加热器迹线356和358的一对对称布置的加热器迹线。第二安装基板351包括由被显示为357的金属迹线耦合在一起的键合焊盘352和353，以及由所示出的金属迹线358耦合在一起的键合焊盘354和355。电迹线359和361在镜平面105的相应侧面上大致对称地定位，电迹线357和358同样如此。
已封装的光电子封装件300被显示为包括在外封装件(OP)170内部的内封装件350。内封装件350具有与面向封装件的底壁的其基底部分相反的开放顶部。
PD模110包括第一接触件，该第一接触件包括通过包括内部键合线115的布线连接到第一外部键合焊盘(FEBP)111的前接触件110a。PD模110还包括第二接触件，该第二接触件包括通过包括后侧金属层102的布线连接到第二外部键合焊盘(SEBP)112的后接触件110b。
所示出的内封装件350包括多层第一介电基板，其包括第一介电层级101以及在第一介电层级101上方的第二介电层级106。如本领域所知，多层第一介电基板可以是整体的(单片式)基板，使得在不需要任何粘合剂的情况下配置第一介电层级101和第二介电层级106以及任何介于中间的金属层。例如，陶瓷封装件具有内建层，其允许整合的金属连接件侧向地和垂直地到达封装件的外表面。
第一介电层级101包括顶侧，该顶侧包括在其上具有后侧金属层102的第一模附连区，所述后侧金属层102延伸到内封装件350的第一外部边缘，并且FEBP111和SEBP112在第一介电层级101的底侧的一部分上方延伸。第二介电层级106在第一介电层级101上方划定(framing)包括线键合区的模附连区，所述线键合区具有延伸到内封装件350的第二外部边缘的第二金属层119。
前接触件110a可以包括连接到n+区域的键合焊盘金属，并且后接触件110b可以包括连接到p+区域的键合焊盘金属。后接触件110b可以是PD模110的整个底侧。内部键合线115将前接触件110a连接到第二金属层119。
PD模110可以包括任何合适的前侧照明PD，其包括光电二极管、光电晶体管或电荷耦合设备(CCD)，其全都可以是现成的(off-the-shelf)PD模。在一个实施例中，PD模110包括具有第一导电性(例如，n+)的第一有源层、具有与第一导电性相反的第二导电性(例如，P+)的第二有源层以及分离第一和第二有源层(以形成PIN二极管)的本征层。
内封装件350位于第二安装基板351上。键合线161a将FEBP111连接到键合焊盘353，并且键合线161b将键合焊盘352连接到上部线键合区177a。键合线162a将SEBP112连接到键合焊盘354，而键合线162b将键合焊盘355连接到上部线键合区177b。
被显示为键合线161a和键合线161b的第一键合线一起将FEBP111连接到与OP170的第一端子191连接的线键合区177a，并且第二键合线162a和162b一起将SEBP112连接到与OP170的第二端子192连接的线键合区177b，第三键合线165将金属迹线359的末端处的键合焊盘155连接到下键合焊盘176a，其通过金属迹线359以及键合焊盘159与第一电极181之间的键合线将第一电极181连接到OP170的第三端子193，并且从键合焊盘158到下键合焊盘176b的第四键合线166通过从金属迹线361的末端处的键合焊盘156的线键合将第二电极182连接到OP170的第三端子194。盖子174气密地密封OP170。
已封装的光电子封装件300包括具有电极181和182的光源模180，以允许通过来自(连接到第三端子193的)下键合焊盘区域176a的第三键合线165以及通过来自(连接到第三端子194的)下键合焊盘区域176b的第四键合线166提供的图3所示的偏置(例如，电泵浦)。在一个特定实施例中，光源模180可以包括VCSEL。光学器件模321a上的光学透明密封件或模片材(密封模)321b被显示为在第一腔模252和第二腔模328之间。密封模321b可以包括密封由第二腔模328限定的上部腔体的下端的光学玻璃，所述第二腔模328由第二安装基板351在上端上密封。光学器件模321a可以包括滤光器或偏光器。第二安装基板351包括光学玻璃，诸如硼硅酸盐玻璃，例如BOROFLOAT33。
经晶片/管芯级处理的所公开实施例提供低成本、高产量制造，并且凭借所公开的大致对称布置的电迹线为封装的光电子设备提供低噪音性能。所公开的实施例的应用通常包括具有光源诸如激光二极管以及内置的监测器光电探测器的所有应用。一个具体示例是磁力计物理封装。其他示例包括原子钟和运动传感器设备。
所公开的实施例可以被整合成多个装配流，以形成多种不同的光电子设备和相关产品。本公开所涉及的领域的技术人员将理解在所要求保护的发明的范围内，许多其他实施例和实施例的变型是可能的，并且可以在不脱离本公开的范围的情况下对所描述的实施例作出替换和修改。

Claims (14)

1.一种层叠光电子封装设备(封装设备)，其包括：
在包括封装材料的封装件内的多个层叠部件，所述封装材料具有为所述封装件提供侧壁和底壁的封装主体，以及用于密封所述封装件的顶部的盖子，所述多个层叠部件包括：
具有顶表面的在所述底壁上的底模，所述顶表面包括多个底部电迹线以及耦合到所述多个底部电迹线中的至少一个的用于发射光的光源模；
在所述底模的所述顶表面上的第一腔模，其具有顶表面和底表面；
在所述第一腔模的所述顶表面上的至少一个光学器件模；
在所述光学器件模上的第二腔模；
在所述第二腔模上的第二安装基板，其具有包括多个顶部电迹线的顶表面；以及
光电探测器模即PD模，其被光学地耦合以便接收源自所述光源模的所述光，
其中所述多个底部电迹线和所述多个顶部电迹线均分别大致对称地定位在底部镜平面和顶部镜平面的第一侧和第二侧上，因此当传导相等且相反的电流时，源于所述第一侧的第一磁场以及源于所述第二侧的第二磁场彼此抵消，以在所述光学器件模上的一个或多个模位置处提供超过50％的磁通密度减少。
2.根据权利要求1所述的封装设备，其中所述多个底部电迹线提供关于所述底部镜平面的镜像，并且所述多个顶部电迹线提供关于所述顶部镜平面的镜像。
3.根据权利要求1所述的封装设备，其中所述光学器件模包括偏光器。
4.根据权利要求1所述的封装设备，其中所述多个底部电迹线在所述第一侧上提供第一加热器迹线和分离的第一驱动器迹线，并在所述第二侧上提供第二驱动器迹线和分离的第二加热器迹线。
5.根据权利要求4所述的封装设备，其进一步包括：第一键合线，其将所述第一加热器迹线短接到所述第一侧上的所述多个顶部电迹线中的第一个；以及第二键合线，其将所述第二加热器迹线短接到所述第二侧上的所述多个顶部电迹线中的第二个。
6.根据权利要求1所述的封装设备，其中所述第一腔模包括玻璃。
7.根据权利要求1所述的封装设备，其中所述第一腔模包括硅。
8.根据权利要求1所述的封装设备，其中所述PD模安装在所述封装件内部的内封装件的基底部分上，其中所述内封装件具有与面向所述封装件的所述底壁的所述基底部分相反的开放顶部。
9.一种方法，其包括：
提供包括多个层叠部件的层叠光电子封装设备(封装设备)，所述多个层叠部件包括在底壁上具有顶表面的底模，所述顶表面包括多个底部电迹线以及耦合到所述多个底部电迹线中的至少一个的用于发射光的光源模，在所述底模的所述顶表面上具有顶表面和底表面的第一腔模，在所述第一腔模的所述顶表面上的光学器件模，在所述光学器件模上的第二腔模，在所述第二腔模上具有包括多个顶部电迹线的顶表面的第二安装基板，以及被光学地耦合以便接收源自所述光源模的所述光的光电探测器模即PD模，其中所述多个底部电迹线和所述多个顶部电迹线均分别大致对称地定位在底部镜平面和顶部镜平面的第一侧和第二侧上，以及
相反地偏置所述多个底部电迹线以便传导沿相反方向在所述第一侧和所述第二侧上流动的相应电流，以及相反地偏置所述第一侧和所述第二侧上的所述多个顶部电迹线以便传导沿相反方向流动的所述相应电流，
其中所述多个底部电迹线和所述多个顶部电迹线两者的源于所述第一侧的第一磁场以及源于所述第二侧的第二磁场在所述光学器件模上的一个或多个模位置处彼此抵消，以在所述模位置处提供超过50％的磁通密度减少。
10.根据权利要求9所述的方法，其中所述多个底部电迹线提供关于所述底部镜平面的镜像，并且所述多个顶部电迹线提供关于所述顶部镜平面的镜像。
11.根据权利要求9所述的方法，其中所述光学器件模包括偏光器。
12.根据权利要求9所述的方法，其中所述多个底部电迹线在所述第一侧上提供第一加热器迹线和分离的第一驱动器迹线，并在所述第二侧上提供第二驱动器迹线和分离的第二加热器迹线，并且其中所述第一加热器迹线与所述第一侧上的所述多个顶部电迹线中的第一个短接，以及所述第二加热器迹线与所述第二侧上的所述多个顶部电迹线中的第二个短接。
13.根据权利要求12所述的方法，其中所述相反地偏置包括施加DC信号和在所述DC信号的顶部上的RF信号以及独立的偏置信号，所述DC信号和所述RF信号相对于所述第二加热器迹线和所述多个顶部电迹线中的所述第二个被施加到所述第一加热器迹线和所述多个顶部电迹线中的所述第一个，并且所述偏置信号被施加在所述第一驱动器迹线和所述第二驱动器迹线之间。
14.根据权利要求9所述的方法，其中所述PD模安装在所述封装设备内部的内封装件的基底部分上，所述内封装件具有与面向所述封装件的所述底壁的所述基底部分相反的开放顶部。
CN201510624188.1A 2014-09-26 2015-09-25 具有磁场抵消的光电子封装件 Active CN105467533B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462055827P 2014-09-26 2014-09-26
US62/055,827 2014-09-26
US14/697,792 2015-04-28
US14/697,792 US9293422B1 (en) 2014-09-26 2015-04-28 Optoelectronic packages having magnetic field cancelation

Publications (2)

Publication Number Publication Date
CN105467533A true CN105467533A (zh) 2016-04-06
CN105467533B CN105467533B (zh) 2019-03-29

Family

ID=55487479

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201510617216.7A Active CN105470315B (zh) 2014-09-26 2015-09-24 用于布线和真空的具有贯穿通道的光电封装件
CN201510624188.1A Active CN105467533B (zh) 2014-09-26 2015-09-25 具有磁场抵消的光电子封装件
CN201510623511.3A Active CN105470343B (zh) 2014-09-26 2015-09-25 具有模-封装腔的光泵浦传感器或基准件

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201510617216.7A Active CN105470315B (zh) 2014-09-26 2015-09-24 用于布线和真空的具有贯穿通道的光电封装件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201510623511.3A Active CN105470343B (zh) 2014-09-26 2015-09-25 具有模-封装腔的光泵浦传感器或基准件

Country Status (2)

Country Link
US (4) US9293422B1 (zh)
CN (3) CN105470315B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109461728A (zh) * 2017-09-06 2019-03-12 德州仪器公司 封装电子装置中的密封腔
CN110049210A (zh) * 2016-04-08 2019-07-23 台湾东电化股份有限公司 摄像模块

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9024397B2 (en) * 2012-01-07 2015-05-05 Texas Instruments Incorporated Thermally-insulated micro-fabricated atomic clock structure and method of forming the atomic clock structure
CN113035851B (zh) 2014-06-18 2022-03-29 艾克斯展示公司技术有限公司 微组装led显示器
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US9559493B2 (en) * 2015-06-09 2017-01-31 Sae Magnetics (H.K.) Ltd. Power monitoring device and transmitter having same
US9806067B2 (en) 2015-07-20 2017-10-31 Globalfoundries Inc. Die-die stacking
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US9793237B2 (en) 2015-10-19 2017-10-17 Qorvo Us, Inc. Hollow-cavity flip-chip package with reinforced interconnects and process for making the same
US9837394B2 (en) * 2015-12-02 2017-12-05 International Business Machines Corporation Self-aligned three dimensional chip stack and method for making the same
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
US9799637B2 (en) * 2016-02-12 2017-10-24 Qorvo Us, Inc. Semiconductor package with lid having lid conductive structure
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10153256B2 (en) * 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
JP6728850B2 (ja) * 2016-03-25 2020-07-22 セイコーエプソン株式会社 量子干渉装置、原子発振器および電子機器
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10268163B2 (en) * 2016-10-19 2019-04-23 Ricoh Company, Ltd. Atomic oscillator and method for manufacturing atomic oscillator
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
DE102017109165B4 (de) * 2017-04-28 2021-12-30 Valeo Schalter Und Sensoren Gmbh Optoelektronische Detektionsvorrichtung für ein Kraftfahrzeug
US10976386B2 (en) 2018-07-17 2021-04-13 Hi Llc Magnetic field measurement system and method of using variable dynamic range optical magnetometers
US11262420B2 (en) 2018-08-17 2022-03-01 Hi Llc Integrated gas cell and optical components for atomic magnetometry and methods for making and using
US11136647B2 (en) 2018-08-17 2021-10-05 Hi Llc Dispensing of alkali metals mediated by zero oxidation state gold surfaces
US10983177B2 (en) 2018-08-20 2021-04-20 Hi Llc Magnetic field shaping components for magnetic field measurement systems and methods for making and using
US10627460B2 (en) 2018-08-28 2020-04-21 Hi Llc Systems and methods including multi-mode operation of optically pumped magnetometer(s)
US11237225B2 (en) 2018-09-18 2022-02-01 Hi Llc Dynamic magnetic shielding and beamforming using ferrofluid for compact Magnetoencephalography (MEG)
US11370941B2 (en) 2018-10-19 2022-06-28 Hi Llc Methods and systems using molecular glue for covalent bonding of solid substrates
US11307268B2 (en) 2018-12-18 2022-04-19 Hi Llc Covalently-bound anti-relaxation surface coatings and application in magnetometers
US11294008B2 (en) 2019-01-25 2022-04-05 Hi Llc Magnetic field measurement system with amplitude-selective magnetic shield
EP3924743A1 (en) 2019-02-12 2021-12-22 Hi LLC Neural feedback loop filters for enhanced dynamic range magnetoencephalography (meg) systems and methods
JP7363053B2 (ja) * 2019-02-27 2023-10-18 富士フイルムビジネスイノベーション株式会社 発光装置、発光デバイス、光学装置及び情報処理装置
US11205886B2 (en) * 2019-03-12 2021-12-21 Nichia Corporation Method of manufacturing optical member, optical member, and light emitting device
CA3130157A1 (en) 2019-03-29 2020-10-08 Hi Llc Integrated magnetometer arrays for magnetoencephalography (meg) detection systems and methods
US11269027B2 (en) 2019-04-23 2022-03-08 Hi Llc Compact optically pumped magnetometers with pump and probe configuration and systems and methods
US11131725B2 (en) 2019-05-03 2021-09-28 Hi Llc Interface configurations for a wearable sensor unit that includes one or more magnetometers
US11839474B2 (en) 2019-05-31 2023-12-12 Hi Llc Magnetoencephalography (MEG) phantoms for simulating neural activity
US10707644B1 (en) * 2019-06-05 2020-07-07 Shanghai Orient-Chip Technology Co., Ltd. Laser diode device
US11131729B2 (en) 2019-06-21 2021-09-28 Hi Llc Systems and methods with angled input beams for an optically pumped magnetometer
US11415641B2 (en) 2019-07-12 2022-08-16 Hi Llc Detachable arrangement for on-scalp magnetoencephalography (MEG) calibration
US10996293B2 (en) 2019-08-06 2021-05-04 Hi Llc Systems and methods having an optical magnetometer array with beam splitters
US11747413B2 (en) 2019-09-03 2023-09-05 Hi Llc Methods and systems for fast field zeroing for magnetoencephalography (MEG)
WO2021091867A1 (en) 2019-11-08 2021-05-14 Hi Llc Methods and systems for homogenous optically-pumped vapor cell array assembly from discrete vapor cells
US11604236B2 (en) 2020-02-12 2023-03-14 Hi Llc Optimal methods to feedback control and estimate magnetic fields to enable a neural detection system to measure magnetic fields from the brain
US11872042B2 (en) 2020-02-12 2024-01-16 Hi Llc Self-calibration of flux gate offset and gain drift to improve measurement accuracy of magnetic fields from the brain using a wearable neural detection system
US11801003B2 (en) 2020-02-12 2023-10-31 Hi Llc Estimating the magnetic field at distances from direct measurements to enable fine sensors to measure the magnetic field from the brain using a neural detection system
US11980466B2 (en) 2020-02-12 2024-05-14 Hi Llc Nested and parallel feedback control loops for ultra-fine measurements of magnetic fields from the brain using a neural detection system
US11977134B2 (en) 2020-02-24 2024-05-07 Hi Llc Mitigation of an effect of capacitively coupled current while driving a sensor component over an unshielded twisted pair wire configuration
US11428756B2 (en) 2020-05-28 2022-08-30 Hi Llc Magnetic field measurement or recording systems with validation using optical tracking data
WO2021242682A1 (en) 2020-05-28 2021-12-02 Hi Llc Systems and methods for recording biomagnetic fields of the human heart
WO2021242680A1 (en) 2020-05-28 2021-12-02 Hi Llc Systems and methods for recording neural activity
US11766217B2 (en) 2020-05-28 2023-09-26 Hi Llc Systems and methods for multimodal pose and motion tracking for magnetic field measurement or recording systems
CN111883436B (zh) * 2020-07-14 2022-07-26 通富微电子股份有限公司技术研发分公司 一种芯片封装方法和芯片封装器件
US11604237B2 (en) 2021-01-08 2023-03-14 Hi Llc Devices, systems, and methods with optical pumping magnetometers for three-axis magnetic field sensing
US11803018B2 (en) 2021-01-12 2023-10-31 Hi Llc Devices, systems, and methods with a piezoelectric-driven light intensity modulator
US12007454B2 (en) 2021-03-11 2024-06-11 Hi Llc Devices, systems, and methods for suppressing optical noise in optically pumped magnetometers
CN115249749B (zh) * 2021-04-25 2024-01-16 同方威视技术股份有限公司 碲锌镉探测器的封装结构
DE102021113715A1 (de) * 2021-05-27 2022-12-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
IL291200A (en) * 2022-03-08 2023-10-01 סייפפילדס טכנול& Magnetic field cancellation system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1701441A (zh) * 2001-08-24 2005-11-23 肖特股份公司 制造电子元件的方法
CN101339953A (zh) * 2007-07-04 2009-01-07 三星Sdi株式会社 有机发光元件及其制造方法
CN103022072A (zh) * 2011-09-26 2013-04-03 株式会社东芝 光电转换装置及其制备方法
WO2014049080A2 (de) * 2012-09-28 2014-04-03 Osram Opto Semiconductors Gmbh Optoelektronische bauelementevorrichtung, verfahren zum herstellen einer optoelektronischen bauelementevorrichtung und verfahren zum betreiben einer optoelektronischen bauelementevorrichtung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100986816B1 (ko) * 2001-08-24 2010-10-12 쇼오트 아게 전자 부품 제조 방법
US6888374B2 (en) 2002-06-17 2005-05-03 Stmicroelectronics Pvt. Ltd. FPGA peripheral routing with symmetric edge termination at FPGA boundaries
US8259765B2 (en) * 2006-12-06 2012-09-04 Google Inc. Passive phase control in an external cavity laser
JP4483896B2 (ja) * 2007-05-16 2010-06-16 ソニー株式会社 半導体装置及びその製造方法
US8836327B2 (en) * 2011-12-07 2014-09-16 Texas Instruments Incorporated Micro-fabricated atomic magnetometer and method of forming the magnetometer
US9024397B2 (en) * 2012-01-07 2015-05-05 Texas Instruments Incorporated Thermally-insulated micro-fabricated atomic clock structure and method of forming the atomic clock structure
US9568565B2 (en) 2013-07-23 2017-02-14 Texas Instruments Incorporated Vapor cell structure having cavities connected by channels for micro-fabricated atomic clocks, magnetometers, and other devices
KR102035252B1 (ko) * 2013-09-03 2019-11-11 삼성디스플레이 주식회사 밀봉재를 포함하는 표시 장치 및 그 제조 방법
TWI506823B (zh) * 2013-09-16 2015-11-01 Lextar Electronics Corp 發光裝置之封裝結構及其製造方法
CN203745624U (zh) * 2013-09-29 2014-07-30 北京纳特斯拉科技有限公司 无磁全密封三轴磁通门磁力仪
CN103715371A (zh) * 2013-12-16 2014-04-09 京东方科技集团股份有限公司 一种封装方法及显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1701441A (zh) * 2001-08-24 2005-11-23 肖特股份公司 制造电子元件的方法
CN101339953A (zh) * 2007-07-04 2009-01-07 三星Sdi株式会社 有机发光元件及其制造方法
CN103022072A (zh) * 2011-09-26 2013-04-03 株式会社东芝 光电转换装置及其制备方法
WO2014049080A2 (de) * 2012-09-28 2014-04-03 Osram Opto Semiconductors Gmbh Optoelektronische bauelementevorrichtung, verfahren zum herstellen einer optoelektronischen bauelementevorrichtung und verfahren zum betreiben einer optoelektronischen bauelementevorrichtung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110049210A (zh) * 2016-04-08 2019-07-23 台湾东电化股份有限公司 摄像模块
CN110049210B (zh) * 2016-04-08 2021-07-06 台湾东电化股份有限公司 摄像模块
CN109461728A (zh) * 2017-09-06 2019-03-12 德州仪器公司 封装电子装置中的密封腔
CN109461728B (zh) * 2017-09-06 2023-11-10 德州仪器公司 封装电子时钟产生器中的密封腔

Also Published As

Publication number Publication date
US9543735B2 (en) 2017-01-10
US20160164252A1 (en) 2016-06-09
CN105470315B (zh) 2019-01-22
US9343447B2 (en) 2016-05-17
US20160093761A1 (en) 2016-03-31
US9293422B1 (en) 2016-03-22
US20160093595A1 (en) 2016-03-31
CN105470343B (zh) 2019-01-22
CN105467533B (zh) 2019-03-29
US9461439B2 (en) 2016-10-04
CN105470315A (zh) 2016-04-06
CN105470343A (zh) 2016-04-06
US20160093575A1 (en) 2016-03-31

Similar Documents

Publication Publication Date Title
CN105467533A (zh) 具有磁场抵消的光电子封装件
CN103368064B (zh) 用于制造照射装置的方法和照射装置
CN102830608B (zh) 蒸气室原子钟物理封装
CN105895625B (zh) 用于邻近传感器的晶片级封装
CN104733999B (zh) 封装的激光二极管和封装激光二极管的方法
CN105705975B (zh) 用于光学通信设备的方法和系统
CN102160197B (zh) 光电元件封装基座
CN108155157B (zh) 包括引线框的集成电路封装体
US10636778B2 (en) Isolator integrated circuits with package structure cavity and fabrication methods
CN106653741B (zh) 邻近传感器、电子设备以及制造邻近传感器的方法
JP6685107B2 (ja) ウェハレベルパッケージングされた光学サブアセンブリ及びそれを有する送受信モジュール
JP2016540385A (ja) オプトエレクトロニクス部品およびその製造方法
JP2005257879A (ja) 光モジュール及びその製造方法並びに保護部材及び電気配線付き保護部材
CN111244265A (zh) 电流传感器制作方法与电流传感器
US9977204B2 (en) Optical apparatus, printed circuit board
KR20150007248A (ko) 제어된 몰딩 경계를 가진 ｌｌｃ 조립체 내의 포토닉 반도체 소자 및 그 제조 방법
CN109392244B (zh) 嵌入在部件承载件中并具有暴露的侧壁的部件
US20220113480A1 (en) Packaging with substrate and printed circuit board cutouts
EP3161878B1 (en) Optoelectronic package
CN107026229B (zh) 半导体封装装置
US20060011931A1 (en) Ic package with an integrated power source
CN107342276A (zh) 半导体器件及相应方法
US10367502B2 (en) Isolation device with half duplex channel
US6850144B1 (en) Coil for use on a substrate
CN108389912A (zh) 一种非制冷红外探测器芯片及其封装结构和制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant