CN105378960B - 用于电子器件的电极表面改性层 - Google Patents

用于电子器件的电极表面改性层 Download PDF

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Publication number
CN105378960B
CN105378960B CN201480040221.XA CN201480040221A CN105378960B CN 105378960 B CN105378960 B CN 105378960B CN 201480040221 A CN201480040221 A CN 201480040221A CN 105378960 B CN105378960 B CN 105378960B
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China
Prior art keywords
carbon atoms
surface modification
group
electrode
modification layer
Prior art date
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Expired - Fee Related
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CN201480040221.XA
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English (en)
Chinese (zh)
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CN105378960A (zh
Inventor
C·纽桑姆
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Cambridge Display Technology Ltd
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Cambridge Display Technology Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
CN201480040221.XA 2013-07-15 2014-07-11 用于电子器件的电极表面改性层 Expired - Fee Related CN105378960B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1312609.9 2013-07-15
GBGB1312609.9A GB201312609D0 (en) 2013-07-15 2013-07-15 Method
PCT/GB2014/000283 WO2015008015A1 (en) 2013-07-15 2014-07-11 Electrode surface modification layer for electronic devices

Publications (2)

Publication Number Publication Date
CN105378960A CN105378960A (zh) 2016-03-02
CN105378960B true CN105378960B (zh) 2018-09-18

Family

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Family Applications (1)

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CN201480040221.XA Expired - Fee Related CN105378960B (zh) 2013-07-15 2014-07-11 用于电子器件的电极表面改性层

Country Status (8)

Country Link
US (1) US9793504B2 (cg-RX-API-DMAC7.html)
JP (1) JP6356240B2 (cg-RX-API-DMAC7.html)
KR (1) KR20160031510A (cg-RX-API-DMAC7.html)
CN (1) CN105378960B (cg-RX-API-DMAC7.html)
DE (1) DE112014003272T5 (cg-RX-API-DMAC7.html)
GB (2) GB201312609D0 (cg-RX-API-DMAC7.html)
TW (1) TW201517339A (cg-RX-API-DMAC7.html)
WO (1) WO2015008015A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2936584A2 (de) * 2012-12-18 2015-10-28 Merck Patent GmbH Emitter mit kondensiertem ringsystem
JP7387685B2 (ja) * 2021-09-17 2023-11-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、プログラム、および基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
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WO2012080701A1 (en) * 2010-12-15 2012-06-21 Cambridge Display Technology Limited Semiconductor blend
WO2013064792A1 (en) * 2011-11-03 2013-05-10 Cambridge Display Technology Limited Organic electronic device and method of manufacture
CN103155196A (zh) * 2010-08-18 2013-06-12 剑桥显示技术有限公司 低接触电阻的有机薄膜晶体管
WO2013098648A1 (en) * 2011-12-30 2013-07-04 Imperial Innovations Ltd. Unconventional chemical doping of organic semiconducting materials

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US7045285B1 (en) * 1996-11-05 2006-05-16 Clinical Micro Sensors, Inc. Electronic transfer moieties attached to peptide nucleic acids
US6501217B2 (en) * 1998-02-02 2002-12-31 International Business Machines Corporation Anode modification for organic light emitting diodes
JP4364586B2 (ja) * 2003-08-27 2009-11-18 Ｔｄｋ株式会社 有機電界効果トランジスタ及びその製造方法
US7642038B2 (en) * 2004-03-24 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
US8187746B2 (en) * 2008-05-16 2012-05-29 Uchicago Argonne, Llc Surface modification agents for lithium batteries
KR20100091663A (ko) * 2009-02-11 2010-08-19 삼성전자주식회사 표면개질제, 이를 사용하여 제조된 적층 구조, 그 구조의 제조방법 및 이를 포함하는 트랜지스터
US8637857B2 (en) * 2010-04-06 2014-01-28 Basf Se Substituted carbazole derivatives and use thereof in organic electronics
US9315724B2 (en) * 2011-06-14 2016-04-19 Basf Se Metal complexes comprising azabenzimidazole carbene ligands and the use thereof in OLEDs
CN103703007A (zh) * 2011-07-27 2014-04-02 默克专利股份有限公司 小分子及其作为有机半导体的用途
GB201203159D0 (en) * 2012-02-23 2012-04-11 Smartkem Ltd Organic semiconductor compositions
KR101952706B1 (ko) * 2012-07-24 2019-02-28 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치
US20140116509A1 (en) * 2012-10-30 2014-05-01 Sean Andrew Vail Solid-State Dye-Sensitized Solar Cell Using Oxidative Dopant
GB201502113D0 (en) * 2015-02-09 2015-03-25 Cambridge Display Tech Ltd Solution for a semiconducting layer of an organic electronic device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103155196A (zh) * 2010-08-18 2013-06-12 剑桥显示技术有限公司 低接触电阻的有机薄膜晶体管
WO2012080701A1 (en) * 2010-12-15 2012-06-21 Cambridge Display Technology Limited Semiconductor blend
WO2013064792A1 (en) * 2011-11-03 2013-05-10 Cambridge Display Technology Limited Organic electronic device and method of manufacture
WO2013098648A1 (en) * 2011-12-30 2013-07-04 Imperial Innovations Ltd. Unconventional chemical doping of organic semiconducting materials

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Pentacene organic field-effect transistors with doped electrode-semiconductor contacts;Shree Prakash Tiwari等;《Organic Electronics》;20100204;第11卷(第5期);第861页 Device fabrication and electrical characterization部分,第862页Results and discussion部分，图1 *
Shree Prakash Tiwari等.Pentacene organic field-effect transistors with doped electrode-semiconductor contacts.《Organic Electronics》.2010,第11卷(第5期), *

Also Published As

Publication number Publication date
US20160149147A1 (en) 2016-05-26
CN105378960A (zh) 2016-03-02
KR20160031510A (ko) 2016-03-22
US9793504B2 (en) 2017-10-17
GB201522168D0 (en) 2016-01-27
GB201312609D0 (en) 2013-08-28
GB2529600A (en) 2016-02-24
JP6356240B2 (ja) 2018-07-11
TW201517339A (zh) 2015-05-01
DE112014003272T5 (de) 2016-04-14
JP2016531423A (ja) 2016-10-06
WO2015008015A1 (en) 2015-01-22

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Granted publication date: 20180918

Termination date: 20190711