CN105378642A - 用于高性能和低成本的闪存转换层的系统和方法 - Google Patents

用于高性能和低成本的闪存转换层的系统和方法 Download PDF

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Publication number
CN105378642A
CN105378642A CN201480026743.4A CN201480026743A CN105378642A CN 105378642 A CN105378642 A CN 105378642A CN 201480026743 A CN201480026743 A CN 201480026743A CN 105378642 A CN105378642 A CN 105378642A
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China
Prior art keywords
flash memory
memory device
ftl
main process
process equipment
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CN201480026743.4A
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English (en)
Chinese (zh)
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D·全
A·斯里尼瓦桑
H·沈
S·黑尼辰
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7201—Logical to physical mapping or translation of blocks or pages
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
CN201480026743.4A 2013-05-13 2014-05-09 用于高性能和低成本的闪存转换层的系统和方法 Pending CN105378642A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/892,433 US9575884B2 (en) 2013-05-13 2013-05-13 System and method for high performance and low cost flash translation layer
US13/892,433 2013-05-13
PCT/US2014/037531 WO2014186232A1 (en) 2013-05-13 2014-05-09 System and method for high performance and low cost flash translation layer

Publications (1)

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CN105378642A true CN105378642A (zh) 2016-03-02

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Country Link
US (1) US9575884B2 (enExample)
EP (1) EP2997459B1 (enExample)
JP (1) JP6190045B2 (enExample)
KR (1) KR20160006709A (enExample)
CN (1) CN105378642A (enExample)
BR (1) BR112015028634A2 (enExample)
TW (1) TWI556099B (enExample)
WO (1) WO2014186232A1 (enExample)

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CN107870867A (zh) * 2016-09-28 2018-04-03 北京忆芯科技有限公司 32位cpu访问大于4gb内存空间的方法与装置
CN109947362A (zh) * 2017-12-21 2019-06-28 西部数据技术公司 管理闪存存储器读取操作
CN111177033A (zh) * 2019-12-24 2020-05-19 河南文正电子数据处理有限公司 一种固态硬盘的使用方法
JP2021508879A (ja) * 2017-12-29 2021-03-11 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． 追加専用記憶デバイスを使用するデータベース管理のためのシステム及び方法
JP2021522579A (ja) * 2018-04-23 2021-08-30 マイクロン テクノロジー，インク． ホストの論理対物理情報の更新

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CN106155579A (zh) * 2015-04-27 2016-11-23 广明光电股份有限公司 固态硬盘动态储存转换层数据的方法
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KR102755961B1 (ko) 2018-10-24 2025-01-17 삼성전자주식회사 호스트 메모리 버퍼를 이용하는 데이터 스토리지 장치 및 그 동작 방법
KR102599176B1 (ko) 2018-11-14 2023-11-08 삼성전자주식회사 호스트 메모리 버퍼를 사용하는 스토리지 장치 및 그것의 메모리 관리 방법
CN111367830B (zh) * 2018-12-06 2023-11-14 北京忆恒创源科技股份有限公司 主机参与的重建ftl表的方法及其存储设备
KR102732866B1 (ko) * 2018-12-07 2024-11-22 에스케이하이닉스 주식회사 컨트롤러, 이를 포함하는 메모리 시스템 및 이의 동작 방법
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Publication number Publication date
EP2997459B1 (en) 2018-03-07
KR20160006709A (ko) 2016-01-19
WO2014186232A1 (en) 2014-11-20
TW201506619A (zh) 2015-02-16
US20140337560A1 (en) 2014-11-13
JP2016522942A (ja) 2016-08-04
EP2997459A1 (en) 2016-03-23
BR112015028634A2 (pt) 2017-07-25
US9575884B2 (en) 2017-02-21
JP6190045B2 (ja) 2017-08-30
TWI556099B (zh) 2016-11-01

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