CN105378507B - 辐射检测器、闪烁体板和制造它们的方法 - Google Patents
辐射检测器、闪烁体板和制造它们的方法 Download PDFInfo
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- CN105378507B CN105378507B CN201480040504.4A CN201480040504A CN105378507B CN 105378507 B CN105378507 B CN 105378507B CN 201480040504 A CN201480040504 A CN 201480040504A CN 105378507 B CN105378507 B CN 105378507B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
- C09K11/626—Halogenides
- C09K11/628—Halogenides with alkali or alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/06—Epitaxial-layer growth by reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
- G21K2004/12—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a support
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-147886 | 2013-07-16 | ||
JP2013147885 | 2013-07-16 | ||
JP2013-147885 | 2013-07-16 | ||
JP2013147886 | 2013-07-16 | ||
JP2013252420A JP6266324B2 (ja) | 2013-07-16 | 2013-12-05 | シンチレータパネルおよびその製造方法 |
JP2013252419A JP6306334B2 (ja) | 2013-07-16 | 2013-12-05 | 放射線検出器およびその製造方法 |
JP2013-252419 | 2013-12-05 | ||
JP2013-252420 | 2013-12-05 | ||
PCT/JP2014/064036 WO2015008542A1 (ja) | 2013-07-16 | 2014-05-27 | 放射線検出器、シンチレータパネルおよびそれらの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105378507A CN105378507A (zh) | 2016-03-02 |
CN105378507B true CN105378507B (zh) | 2021-04-13 |
Family
ID=55378690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480040504.4A Active CN105378507B (zh) | 2013-07-16 | 2014-05-27 | 辐射检测器、闪烁体板和制造它们的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9897705B2 (zh) |
EP (1) | EP3023812B1 (zh) |
KR (1) | KR101784118B1 (zh) |
CN (1) | CN105378507B (zh) |
WO (1) | WO2015008542A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9859316B2 (en) * | 2014-06-06 | 2018-01-02 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
KR101935134B1 (ko) | 2017-02-27 | 2019-01-03 | 경희대학교 산학협력단 | 부식 방지막을 포함하는 신틸레이터 패널 및 이를 포함하는 엑스선 검출기 |
JP2023548561A (ja) * | 2020-11-06 | 2023-11-17 | インテグレイテッド・センサーズ・リミテッド・ライアビリティ・カンパニー | 電離放射線ビームモニタリングシステム |
Citations (3)
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US4806757A (en) * | 1985-11-07 | 1989-02-21 | Hitachi, Ltd. | Information reading apparatus for radiation image |
CN102725658A (zh) * | 2010-01-28 | 2012-10-10 | 佳能株式会社 | 闪烁体结晶体、其制造方法和放射线检测器 |
CN103060752A (zh) * | 2013-01-22 | 2013-04-24 | 同济大学 | 微柱结构CsI(Tl) X射线闪烁转换屏的预镀层辅助制备方法及其应用 |
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FR2178875B1 (zh) * | 1972-04-01 | 1977-09-02 | Leitz Ernst Gmbh | |
EP0042149B1 (en) * | 1980-06-16 | 1987-03-04 | Kabushiki Kaisha Toshiba | Radiation excited phosphor screen and method for manufacturing the same |
JP2003050298A (ja) * | 2001-08-06 | 2003-02-21 | Fuji Photo Film Co Ltd | 放射線像変換パネルおよびその製造方法 |
WO2005038490A1 (en) * | 2003-10-22 | 2005-04-28 | Canon Kabushiki Kaisha | Radiation detection device, scintillator panel, method of making the same, making apparatus, and radiation image pick-up system |
US7180068B1 (en) * | 2004-06-09 | 2007-02-20 | Radiation Monitoring Devices, Inc. | Scintillation materials with reduced afterglow and method of preparation |
US7759645B1 (en) * | 2004-06-09 | 2010-07-20 | Charles Brecher | Scintillation materials with reduced afterglow and method of preparation |
US7700003B2 (en) * | 2005-03-30 | 2010-04-20 | General Electric Company | Composition, article, and method |
JP5089195B2 (ja) * | 2006-03-02 | 2012-12-05 | キヤノン株式会社 | 放射線検出装置、シンチレータパネル、放射線検出システム及び放射線検出装置の製造方法 |
JP4920994B2 (ja) * | 2006-03-02 | 2012-04-18 | キヤノン株式会社 | シンチレータパネル、放射線検出装置及び放射線検出システム |
JP2008107222A (ja) * | 2006-10-26 | 2008-05-08 | Konica Minolta Medical & Graphic Inc | シンチレータパネル |
JP5050572B2 (ja) * | 2007-03-05 | 2012-10-17 | コニカミノルタエムジー株式会社 | 放射線画像検出器 |
JP2008224357A (ja) * | 2007-03-12 | 2008-09-25 | Konica Minolta Medical & Graphic Inc | シンチレータプレート |
JP5499706B2 (ja) * | 2007-04-05 | 2014-05-21 | コニカミノルタ株式会社 | シンチレータパネル |
US8431041B2 (en) * | 2008-03-31 | 2013-04-30 | Stc.Unm | Halide-based scintillator nanomaterial |
WO2010050358A1 (ja) * | 2008-10-28 | 2010-05-06 | コニカミノルタエムジー株式会社 | シンチレータパネル、放射線検出装置及びそれらの製造方法 |
JP2011017683A (ja) * | 2009-07-10 | 2011-01-27 | Fujifilm Corp | 放射線画像検出器及びその製造方法 |
US8779365B2 (en) * | 2010-04-19 | 2014-07-15 | Wake Forest University | Scintillators and applications thereof |
JP5473835B2 (ja) * | 2010-08-31 | 2014-04-16 | 富士フイルム株式会社 | 放射線検出器、放射線画像撮影装置及び放射線検出器の製造方法 |
JP2012177624A (ja) * | 2011-02-25 | 2012-09-13 | Fujifilm Corp | 放射線画像検出装置及び放射線画像検出装置の製造方法 |
CN105062477B (zh) | 2011-08-19 | 2017-06-16 | 日本结晶光学株式会社 | 闪烁体及其制造方法 |
US9035263B2 (en) * | 2011-10-25 | 2015-05-19 | Konica Minolta Medical & Graphic, Inc. | Radiation imaging apparatus having an anti-static function |
JP5928208B2 (ja) * | 2012-07-12 | 2016-06-01 | ソニー株式会社 | 放射線検出器 |
-
2014
- 2014-05-27 KR KR1020167002699A patent/KR101784118B1/ko active IP Right Grant
- 2014-05-27 WO PCT/JP2014/064036 patent/WO2015008542A1/ja active Application Filing
- 2014-05-27 CN CN201480040504.4A patent/CN105378507B/zh active Active
- 2014-05-27 EP EP14825823.9A patent/EP3023812B1/en active Active
-
2016
- 2016-01-06 US US14/989,242 patent/US9897705B2/en active Active
Patent Citations (3)
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US4806757A (en) * | 1985-11-07 | 1989-02-21 | Hitachi, Ltd. | Information reading apparatus for radiation image |
CN102725658A (zh) * | 2010-01-28 | 2012-10-10 | 佳能株式会社 | 闪烁体结晶体、其制造方法和放射线检测器 |
CN103060752A (zh) * | 2013-01-22 | 2013-04-24 | 同济大学 | 微柱结构CsI(Tl) X射线闪烁转换屏的预镀层辅助制备方法及其应用 |
Non-Patent Citations (1)
Title |
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安检设备中使用的短余辉碘化铯(铊)晶体;董加彬等;《警察技术》;19980415(第02期);第20-21页,图1-3 * |
Also Published As
Publication number | Publication date |
---|---|
EP3023812B1 (en) | 2017-09-20 |
WO2015008542A1 (ja) | 2015-01-22 |
EP3023812A1 (en) | 2016-05-25 |
US9897705B2 (en) | 2018-02-20 |
KR20160027133A (ko) | 2016-03-09 |
US20160116607A1 (en) | 2016-04-28 |
CN105378507A (zh) | 2016-03-02 |
EP3023812A4 (en) | 2017-01-11 |
KR101784118B1 (ko) | 2017-10-10 |
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