CN105369342A - 一种感应加热金红石单晶体生长炉及其制备金红石方法 - Google Patents
一种感应加热金红石单晶体生长炉及其制备金红石方法 Download PDFInfo
- Publication number
- CN105369342A CN105369342A CN201510843576.9A CN201510843576A CN105369342A CN 105369342 A CN105369342 A CN 105369342A CN 201510843576 A CN201510843576 A CN 201510843576A CN 105369342 A CN105369342 A CN 105369342A
- Authority
- CN
- China
- Prior art keywords
- growth
- crystal
- furnace
- rutile
- heating zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 58
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 52
- 239000000919 ceramic Substances 0.000 claims abstract description 27
- 230000005674 electromagnetic induction Effects 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 230000006698 induction Effects 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000004321 preservation Methods 0.000 claims description 4
- 239000011435 rock Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000000563 Verneuil process Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002737 fuel gas Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510843576.9A CN105369342B (zh) | 2015-11-25 | 2015-11-25 | 一种感应加热金红石单晶体生长炉及其制备金红石方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510843576.9A CN105369342B (zh) | 2015-11-25 | 2015-11-25 | 一种感应加热金红石单晶体生长炉及其制备金红石方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105369342A true CN105369342A (zh) | 2016-03-02 |
CN105369342B CN105369342B (zh) | 2017-10-31 |
Family
ID=55371956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510843576.9A Active CN105369342B (zh) | 2015-11-25 | 2015-11-25 | 一种感应加热金红石单晶体生长炉及其制备金红石方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105369342B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114318510A (zh) * | 2021-12-30 | 2022-04-12 | 无锡晶名光电科技有限公司 | 锑化铟晶体生长方法及晶体生长炉 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2792287A (en) * | 1956-04-04 | 1957-05-14 | Nat Lead Co | Synthetic rutile crystal and method for making same |
US3870472A (en) * | 1969-11-26 | 1975-03-11 | Joseph A Adamski | Method and apparatus for growing crystals by annealing the crystal after formation |
CN1394989A (zh) * | 2002-06-14 | 2003-02-05 | 中国科学院上海光学精密机械研究所 | 生长金红石晶体的方法 |
JP2003128495A (ja) * | 2001-10-22 | 2003-05-08 | Isao Tanaka | ルチル単結晶の製造方法 |
CN1552955A (zh) * | 2003-06-02 | 2004-12-08 | 四川大学 | 用TiO2超细粉焰熔法人工合成金红石单晶的方法和设备 |
CN1563509A (zh) * | 2004-03-16 | 2005-01-12 | 东北大学 | 一种可控气氛焰熔法制备金红石单晶体的工艺及装置 |
CN101736394A (zh) * | 2010-01-12 | 2010-06-16 | 沈阳工程学院 | 一种生长光学级金红石单晶体的焰熔炉 |
CN202499929U (zh) * | 2012-03-28 | 2012-10-24 | 上海赢奔晶体科技有限公司 | 焰熔单晶炉 |
CN205241849U (zh) * | 2015-11-25 | 2016-05-18 | 东北大学 | 一种感应加热金红石单晶体生长炉 |
-
2015
- 2015-11-25 CN CN201510843576.9A patent/CN105369342B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2792287A (en) * | 1956-04-04 | 1957-05-14 | Nat Lead Co | Synthetic rutile crystal and method for making same |
US3870472A (en) * | 1969-11-26 | 1975-03-11 | Joseph A Adamski | Method and apparatus for growing crystals by annealing the crystal after formation |
JP2003128495A (ja) * | 2001-10-22 | 2003-05-08 | Isao Tanaka | ルチル単結晶の製造方法 |
CN1394989A (zh) * | 2002-06-14 | 2003-02-05 | 中国科学院上海光学精密机械研究所 | 生长金红石晶体的方法 |
CN1552955A (zh) * | 2003-06-02 | 2004-12-08 | 四川大学 | 用TiO2超细粉焰熔法人工合成金红石单晶的方法和设备 |
CN1563509A (zh) * | 2004-03-16 | 2005-01-12 | 东北大学 | 一种可控气氛焰熔法制备金红石单晶体的工艺及装置 |
CN101736394A (zh) * | 2010-01-12 | 2010-06-16 | 沈阳工程学院 | 一种生长光学级金红石单晶体的焰熔炉 |
CN202499929U (zh) * | 2012-03-28 | 2012-10-24 | 上海赢奔晶体科技有限公司 | 焰熔单晶炉 |
CN205241849U (zh) * | 2015-11-25 | 2016-05-18 | 东北大学 | 一种感应加热金红石单晶体生长炉 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114318510A (zh) * | 2021-12-30 | 2022-04-12 | 无锡晶名光电科技有限公司 | 锑化铟晶体生长方法及晶体生长炉 |
CN114318510B (zh) * | 2021-12-30 | 2023-09-19 | 无锡晶名光电科技有限公司 | 锑化铟晶体生长方法及晶体生长炉 |
Also Published As
Publication number | Publication date |
---|---|
CN105369342B (zh) | 2017-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102162130B (zh) | 一种蓝宝石单晶的制备方法 | |
CN101580963B (zh) | 300mm以上蓝宝石单晶的冷心放肩微量提拉制备法 | |
CN101323968B (zh) | 多元化合物红外晶体生长装置 | |
CN102352530B (zh) | 用于直拉硅单晶炉的热屏装置 | |
WO2020156213A1 (zh) | 一种半导体晶体生长装置 | |
CN107236992B (zh) | 一种焰熔法生长光学级钛酸锶单晶体装置 | |
CN102628184A (zh) | 真空感应加热生长宝石晶体的方法和实现该方法的设备 | |
CN101445954A (zh) | 一种控制直拉硅单晶生长过程中晶体和熔体界面处的温度梯度及热历史的方法 | |
CN108418085A (zh) | 一种全晶体光纤及包层制作工艺 | |
CN104313693B (zh) | 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法 | |
CN109837584A (zh) | 一种直拉硅芯原料棒的熔接工艺 | |
CN102517624A (zh) | 一种多段控温晶体生长炉 | |
CN104788014B (zh) | 一种光纤预制棒制备及光纤拉丝的方法 | |
CN205711031U (zh) | 一种单晶炉 | |
CN105951170A (zh) | 锗单晶生长炉及基于生长炉的锗单晶生长温度控制方法 | |
CN104073875A (zh) | 一种大尺寸蓝宝石晶体动态温度场制备方法 | |
CN111170629B (zh) | 一种纤芯单晶化后处理方法以及纤芯单晶化装置 | |
CN109778308B (zh) | 一种调节激光加热基座晶体生长温度梯度的装置及方法 | |
CN205241849U (zh) | 一种感应加热金红石单晶体生长炉 | |
CN105369342A (zh) | 一种感应加热金红石单晶体生长炉及其制备金红石方法 | |
CN103882521A (zh) | 饰品级红宝石单晶体的生长方法 | |
CN103205799A (zh) | 一种生长c向白宝石单晶体的方法 | |
CN101182646A (zh) | 采用热交换法生长半球型晶体的装置及方法 | |
CN104480527A (zh) | 一种多晶硅铸锭炉全功率控制铸锭工艺 | |
CN104357904A (zh) | 一种大尺寸钛宝石晶体生长方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Tang Jian Inventor after: Liu Xudong Inventor after: Zhang Ruiqing Inventor after: Bi Xiaoguo Inventor after: Sun Xudong Inventor after: Niu Wei Inventor after: Dong Yingnan Inventor before: Tang Jian Inventor before: Liu Xudong Inventor before: Zhang Ruiqing Inventor before: Bi Xiaoguo Inventor before: Sun Xudong |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20170622 Address after: Shenbei New Area Puchang road Shenyang City, Liaoning province 110136 No. 18 Applicant after: Shenyang Engineering College Address before: 110819 Heping Road, Heping District, Liaoning, Shenyang, Lane No. 11, No. 3 Applicant before: Northeastern University |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181012 Address after: 110000 Shenbei Road, Shenbei New Area, Shenyang, Liaoning 49 Patentee after: Shenyang sunrise Crystal Technology Co., Ltd. Address before: 110136 Pu Chang Road, Shenbei New Area, Shenyang, Liaoning Province, No. 18 Patentee before: Shenyang Engineering College |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210104 Address after: No.18, Puchang Road, Shenbei New District, Shenyang, Liaoning Province, 110000 Patentee after: SHENYANG INSTITUTE OF ENGINEERING Address before: 110000 Shenbei Road, Shenbei New Area, Shenyang, Liaoning 49 Patentee before: Shenyang sunrise Crystal Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20210208 Address after: Room 453, F7, Shenyang International Software Park, 860-2, shangshengou village, Hunnan District, Shenyang City, Liaoning Province Patentee after: Shenyang Xinpu Crystal Technology Co., Ltd Address before: No.18, Puchang Road, Shenbei New District, Shenyang, Liaoning Province, 110000 Patentee before: SHENYANG INSTITUTE OF ENGINEERING |
|
TR01 | Transfer of patent right |