CN105353433B - 用于极紫外光刻的反射镜的基底 - Google Patents

用于极紫外光刻的反射镜的基底 Download PDF

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Publication number
CN105353433B
CN105353433B CN201510870929.4A CN201510870929A CN105353433B CN 105353433 B CN105353433 B CN 105353433B CN 201510870929 A CN201510870929 A CN 201510870929A CN 105353433 B CN105353433 B CN 105353433B
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Prior art keywords
base body
substrate
alloy
mirror
phase
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Chinese (zh)
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CN105353433A (zh
Inventor
C.埃克斯坦
H.马尔特
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/12—Alloys based on aluminium with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Sampling And Sample Adjustment (AREA)
CN201510870929.4A 2011-01-21 2012-01-14 用于极紫外光刻的反射镜的基底 Active CN105353433B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161434869P 2011-01-21 2011-01-21
DE102011002953.2 2011-01-21
DE201110002953 DE102011002953A1 (de) 2011-01-21 2011-01-21 Substrat für Spiegel für die EUV-Lithographie
US61/434,869 2011-01-21
CN201280006089.1A CN103328664B (zh) 2011-01-21 2012-01-14 用于euv光刻的反射镜的基底

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201280006089.1A Division CN103328664B (zh) 2011-01-21 2012-01-14 用于euv光刻的反射镜的基底

Publications (2)

Publication Number Publication Date
CN105353433A CN105353433A (zh) 2016-02-24
CN105353433B true CN105353433B (zh) 2019-08-23

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
CN201510870929.4A Active CN105353433B (zh) 2011-01-21 2012-01-14 用于极紫外光刻的反射镜的基底
CN201280006089.1A Active CN103328664B (zh) 2011-01-21 2012-01-14 用于euv光刻的反射镜的基底
CN201910693451.0A Active CN110376670B (zh) 2011-01-21 2012-01-14 用于极紫外光刻的反射镜的基底

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201280006089.1A Active CN103328664B (zh) 2011-01-21 2012-01-14 用于euv光刻的反射镜的基底
CN201910693451.0A Active CN110376670B (zh) 2011-01-21 2012-01-14 用于极紫外光刻的反射镜的基底

Country Status (9)

Country Link
US (3) US20130301151A1 (cg-RX-API-DMAC10.html)
EP (2) EP3489374B1 (cg-RX-API-DMAC10.html)
JP (1) JP6023083B2 (cg-RX-API-DMAC10.html)
KR (1) KR102080180B1 (cg-RX-API-DMAC10.html)
CN (3) CN105353433B (cg-RX-API-DMAC10.html)
DE (1) DE102011002953A1 (cg-RX-API-DMAC10.html)
ES (1) ES2933686T3 (cg-RX-API-DMAC10.html)
PL (1) PL3489374T3 (cg-RX-API-DMAC10.html)
WO (1) WO2012098062A2 (cg-RX-API-DMAC10.html)

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DE102009040785A1 (de) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung
DE102011002953A1 (de) * 2011-01-21 2012-07-26 Carl Zeiss Smt Gmbh Substrat für Spiegel für die EUV-Lithographie
DE102013107192A1 (de) * 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
DE102013215541A1 (de) 2013-08-07 2015-02-12 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US12017264B2 (en) * 2016-03-16 2024-06-25 Toyo Aluminium Kabushiki Kaisha Aluminum foil for ultraviolet light reflecting materials and method for producing same
DE102016209359A1 (de) * 2016-05-31 2017-11-30 Carl Zeiss Smt Gmbh EUV-Kollektor
CN112384838B (zh) 2018-05-09 2023-06-16 弗劳恩霍夫应用研究促进协会 用于光学反射镜的由复合材料制造的镜背载体及其制造方法
WO2020046739A2 (en) * 2018-08-27 2020-03-05 Materion Corporation Uv reflective mirrors for display fabrication
CN114868083A (zh) * 2019-12-19 2022-08-05 Asml荷兰有限公司 真空中增强的热导率
CN112662918A (zh) * 2020-12-02 2021-04-16 国网电力科学研究院武汉南瑞有限责任公司 Al2O3-TiC颗粒增强铝基复合材料及其制备方法
WO2025201772A1 (en) 2024-03-28 2025-10-02 Asml Netherlands B.V. Substrate and method for a high power laser system

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EP0939467A2 (en) * 1998-02-26 1999-09-01 Nikon Corporation Mirror for an ultraviolet laser and method
JP2005259949A (ja) * 2004-03-11 2005-09-22 Nikon Corp ミラー及び照明光学装置
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Also Published As

Publication number Publication date
JP2014506724A (ja) 2014-03-17
EP2665839A2 (en) 2013-11-27
US20170160447A1 (en) 2017-06-08
US20210149093A1 (en) 2021-05-20
CN103328664B (zh) 2016-01-20
EP2665839B1 (en) 2018-12-26
US10935704B2 (en) 2021-03-02
JP6023083B2 (ja) 2016-11-09
WO2012098062A3 (en) 2012-10-18
WO2012098062A2 (en) 2012-07-26
PL3489374T3 (pl) 2023-01-30
DE102011002953A1 (de) 2012-07-26
EP3489374A1 (en) 2019-05-29
ES2933686T3 (es) 2023-02-13
US20130301151A1 (en) 2013-11-14
KR102080180B1 (ko) 2020-02-24
CN110376670B (zh) 2022-03-22
EP3489374B1 (en) 2022-09-21
KR20140018245A (ko) 2014-02-12
CN105353433A (zh) 2016-02-24
CN103328664A (zh) 2013-09-25
CN110376670A (zh) 2019-10-25

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