CN105340060A - 反应器气体面板的共同排气 - Google Patents

反应器气体面板的共同排气 Download PDF

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CN105340060A
CN105340060A CN201480035706.XA CN201480035706A CN105340060A CN 105340060 A CN105340060 A CN 105340060A CN 201480035706 A CN201480035706 A CN 201480035706A CN 105340060 A CN105340060 A CN 105340060A
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丹尼斯·L·德马斯
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Abstract

描述了一种基板处理系统，该基板处理系统具有反应器及气体面板、及用于反应器及气体面板的共同排气。来自反应器的排气导管被发送至气体面板，且来自反应器的排放气体用以净化气体面板。来自反应器的气体可在流至气体面板之前被冷却。

Description

反应器气体面板的共同排气
技术领域
本文公开了用于半导体处理的方法及设备。更具体而言，本文所公开的实施方式涉及用于外延沉积的方法及设备。
背景技术
外延是在半导体处理中被广泛地使用以在半导体基板上形成非常薄的材料层的处理。这些层通常界定半导体装置的最小特征中的一些最小特征，且如果晶体材料的电子特性是所期望的，那么这些层可具有高质量的晶体结构。沉积前驱物通常被提供至设置基板的处理腔室中，基板被加热至有利于具有期望特性的材料层生长的温度。
外延处理通常通过在反应器中设置基板、使前驱物气体混合物流至反应器中、及执行沉积膜于基板上的反应而于反应器中执行。未反应的气体、副产物及由基板所释放的任何气体流出反应器至排气操纵(handle)系统。这些气体通常不被回收。
随着制造标准增多，对更有效率且更有成本效益的制造处理的努力持续进行着。仍持续存在着对低成本的半导体处理腔室及工艺的需求。
发明内容
本文所述的实施方式提供一种基板处理系统，该基板处理系统具有反应器及气体面板，及用于反应器及气体面板的共同排气。来自反应器的排气导管被发送(route)至气体面板，且来自反应器的排放气体用以净化气体面板。来自反应器的气体可在流至气体面板之前被冷却。
附图简要说明
因此以可详细理解本发明的上述特征的方式，通过参照实施方式来获得上文简要概述的本发明的更具体的描述，这些实施方式中的一些实施方式在附图中示出。然而，应注意，附图仅图示本发明的典型实施方式，且因此这些附图不应被视为对本发明的范围的限制，因为本发明可允许其他等效实施方式。
图1是根据一个实施方式的处理腔室的示意剖视图。
图2是根据另一实施方式的半导体处理系统的透视图。
具体实施方式
图1是根据一个实施方式的半导体处理系统100的示意图。处理系统100具有反应器102、用于使气体流至反应器102的气体面板104、及耦接至气体面板的排气系统106。气体面板104具有一个或更多个导管108，这些导管108运载气体至反应器102。气体面板104中的阀及配件控制通过导管108的气流。处理气体通过入口112流至反应器102中，且通过排气管线134从反应器102被排出。诸如真空泵之类的泵132可用以从反应器102排放气体。
反应器102通常容纳于外壳(enclosure)124中。冲洗气体通常从气源130例如鼓风机或空气驱动器通过导管128而流过外壳124。冲洗气体流过外壳124及反应器102的四周，而夹带从反应器102或所连接的管路逸出的任何气体。冲洗气体可为诸如空气之类的任何方便取得的周围气体混和物。
排气管110将反应器外壳124耦接至气体面板104。排气管线110耦接至气体面板104的排放气体入口114，且提供用于冲洗气体面板104的内部的气体，以从气体面板104中的配件及阀移除散逸的气体。冲洗气体从反应器外壳124流过导管110到达入口114。排放气体入口114可定位于气体箱的任何方便的位置。风门(damper)122可设置于排气管线110中，以控制反应器外壳124中的压力和/或通过气体面板104的排放气体流。压力传感器136可用以通过控制风门122并基于来自压力传感器的压力信号来维持反应器外壳124中的所期望的压力。隔膜或压电装置可用于此压力传感器。
排气管线116将气体面板104耦接至排气泵118。排气管线116耦接至气体面板104的排气出口120。排气出口120可定位成把通过气体面板104的气流最大化，且把对来自气体面板104的所有气体进行的移除最大化。
如果从反应器外壳124所排放的气体高于气体面板104的温度容忍度(temperaturetolerance)，那么可使用冷却器125于排气管线116中以冷却气体。冷却器可为热交换器、散热器、或冷却套管。对于热交换器及冷却套管，可使用诸如水之类的冷媒以冷却排放气体。冷却器125可包括用于收集可能从排放气体凝结的任何液体的液体收集器126。来自液体收集器126的液体可被发送至液体废物处置系统，或被回收至冷却器125以用于热整合。如果液体在冷却器125中蒸发(flash)成气体，那么所得到的气体可被发送至排气管线116。
图2是根据另一实施方式的半导体处理系统200的透视图。处理腔室202设置于具有底部206的框架204中，而处理腔室202放置在底部206上。气体面板208耦接至框架204且具有供应气体至处理腔室202的气体导管(在图2的实施方式中不可见)。气体面板208沿着框架204的一侧竖直延伸，而气体面板208的下部部分邻接于底部206且气体面板208的上部部分邻接于框架204的顶部部分218。框架204具有将处理腔室202与外部环境分开的外壳212，以保持住从处理腔室202或从连接至处理腔室202的管道所逸出的任何气体。在图2中，外壳212显示为部分透明的，但显示为透明的外壳212的部分可为不透明的，或可具有介于透明与不透明之间的任何程度的透光性。
腔室排气操纵器210可耦接至框架204且耦接至处理腔室202的上部部分218。腔室排气操纵器210迫使来自外壳212的气体通过排气管线216。新鲜气体可通过底部206中的一个或更多个开口、或通过任何方便的通道被添加至外壳。部分显示为虚线的排气管线216借助框架204的顶部部分218将腔室排气操纵器210耦接至气体面板208。排气管线216于气体面板208的上部部分220处耦接至气体面板208。气体面板208的下部部分224处的气体面板排气口222使排放气体得以从气体面板208排出。如果期望，可将排气泵(未示出)连接至气体面板排气口222，以将排放气体发送至环境控制设备或废物处置系统。腔室排气管线214、腔室排气操纵器210、排气管线216、气体面板208及气体面板排气口222形成处理腔室202及气体面板208所共有的单一排放气体路径。如同图1的实施方式一样，腔室排气操纵器210可包括阀(未示出)及冷却器(未示出)，如果期望，阀和冷却器可具有液体操纵能力及热整合能力。应注意，在某些实施方式中，冲洗气体可能通过开口222以相反方向流至气体面板208中、通过导管216离开气体面板到达外壳212中、且接着通过底部206中任何适合的开口来通过底部206而离开。气体操纵器210可定向成使气体以任一方向流动。此外，气体操纵器210可设置于顶部部分218的内部，且流体地耦接至外壳212及导管216。
对处理腔室及气体面板使用单一排气路径提供了减少用以对半导体处理系统200进行排气的气体的量的益处。处理腔室202可借助从气体面板208流至处理腔室202中的新鲜气体的压力来进行排气，且从处理腔室202所排放的气体可用以从气体面板中的阀及配件清除气体面板208中的的散逸排放物。减少排放气体的容积减少了废气操纵设施的负荷，从而减少半导体制造的总成本。
设备200可包括在外壳212内部的或耦接至外壳212的压力传感器136；设置于气体操纵器210、导管216或气体面板208的上部部分220中的风门122；设置于气体操纵器210、导管216或气体面板208的上部部分220中的冷却器125；和/或设置于气体操纵器210中、耦接至导管216、或设置于气体面板208的上部部分220中的液体收集器126。
尽管上文针对本发明的实施方式，但是也可在不背离本发明的基本范围的情况下设计出本发明的其他及进一步实施方式，且本发明的范围是由以下的权利要求书来确定的。

Claims (15)

1.一种基板处理设备，所述基板处理设备包括：
外壳；
反应器，所述反应器设置在所述外壳中；
气体面板，所述气体面板耦接至所述反应器；
气体操纵器，所述气体操纵器流体地耦接至所述外壳；
第一排气导管，所述第一排气导管耦接至所述气体操纵器且耦接至所述气体面板的排气入口；及
第二排气导管，所述第二排气导管耦接至所述气体面板的排气出口且耦接至排气泵。
2.如权利要求1所述的基板处理设备，其中所述气体操纵器位于所述外壳中。
3.如权利要求2所述的基板处理设备，进一步包括风门，所述风门设置于所述第一排气导管中。
4.如权利要求3所述的基板处理设备，进一步包括框架，其中所述第一排气导管设置成穿过所述框架的顶部部分。
5.如权利要求4所述的基板处理设备，进一步包括冷却器，所述冷却器耦接至所述排气导管。
6.如权利要求5所述的基板处理设备，其中所述冷却器包括液体收集器。
7.一种基板处理系统，所述基板处理系统包括：
反应器，所述反应器设置于反应器外壳中；
气体面板，所述气体面板耦接至所述反应器；
排放气体供应器，所述排放气体供应器耦接至所述反应器外壳；及
共同排气路径，所述共同排气路径将所述反应器外壳与所述气体面板耦接。
8.如权利要求7所述的基板处理系统，其中所述共同排气路径于所述反应器外壳的上部部分处耦接至所述反应器外壳，且于所述气体面板的上部部分处耦接至所述气体面板。
9.如权利要求8所述的基板处理系统，其中所述共同排气路径包括所述气体面板的下部部分处的气体面板排气口。
10.如权利要求9所述的基板处理系统，进一步包括气体操纵器，所述气体操纵器流体地耦接至所述反应器外壳及所述排气路径。
11.如权利要求10所述的基板处理系统，进一步包括风门，所述风门设置在介于所述反应器外壳与所述气体面板之间的所述共同排气路径中。
12.如权利要求7所述的基板处理系统，进一步包括气体操纵器，所述气体操纵器设置于所述共同排气路径中。
13.如权利要求12所述的基板处理系统，进一步包括冷却器，所述冷却器设置于所述共同排气路径中。
14.如权利要求13所述的基板处理系统，进一步包括压力传感器，所述压力传感器耦接至设置于所述共同排气路径中的风门。
15.如权利要求14所述的基板处理系统，其中所述共同排气路径于所述气体面板的上部部分处耦接至所述气体面板。
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