CN105336723A - 半导体模块、半导体模块组件及半导体装置 - Google Patents

半导体模块、半导体模块组件及半导体装置 Download PDF

Info

Publication number
CN105336723A
CN105336723A CN201410362946.2A CN201410362946A CN105336723A CN 105336723 A CN105336723 A CN 105336723A CN 201410362946 A CN201410362946 A CN 201410362946A CN 105336723 A CN105336723 A CN 105336723A
Authority
CN
China
Prior art keywords
semiconductor
semiconductor module
connecting plate
plate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410362946.2A
Other languages
English (en)
Other versions
CN105336723B (zh
Inventor
许飞
朱鹏程
张颖奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Priority to CN201410362946.2A priority Critical patent/CN105336723B/zh
Priority to EP15178253.9A priority patent/EP2980848A1/en
Priority to BR102015017848A priority patent/BR102015017848A2/pt
Priority to US14/811,394 priority patent/US9484275B2/en
Publication of CN105336723A publication Critical patent/CN105336723A/zh
Application granted granted Critical
Publication of CN105336723B publication Critical patent/CN105336723B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/22—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device liquid at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/112—Mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1076—Shape of the containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1094—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明涉及半导体模块、半导体模块组件及半导体装置，其中的一种半导体模块，其包括多个导电顶板、导电基板、设置于导电基板上的多个半导体芯片、第一电源连接板、第二电源连接板及电绝缘外壳元件。多个半导体芯片分别与多个导电顶板接触；每个半导体芯片包括与导电基板电性耦合的第一电极及与对应导电顶板电性耦合的第二电极；第一电源连接板具有多个凸出部，多个凸出部分别与多个导电顶板电性接触。第二电源连接板与导电基板电性接触，电绝缘外壳元件用于将第一电源连接板及第二电源连接板结合在一起，该电绝缘外壳元件开设有至少一个开口。本发明还提供一种半导体模块组件及半导体装置。

Description

半导体模块、半导体模块组件及半导体装置
技术领域
本发明涉及电子技术领域，特别涉及一种半导体模块、半导体模块组件及半导体装置。
背景技术
目前，大部分的石油和天然气开发是在深度为1000米的海域进行。由于渐增的能量需求，近海油气开发正移进更深水域，例如深度为3000米的海底。为了确保有效和安全的生产，电力变换器(powerelectronicconverter)被安装在海底并且需要承受海底的高压力环境。
在目前的近海油气开发中，通常的做法是电力变换器被安装于能够承受处于一定深度的海域之水压力的容器内。然而，随着电力变换器的额定功率的增大以及海底深度的增加，上述容器的壁厚需要增大以承受随着深度增加而增大的海底水压力，然而容器的壁厚增大将导致容器的体积变得庞大以及重量增加，这对于上述容器安装于海底是不利的。上述随深度增加而增大的海底水压力可能会导致电力变换器中的半导体芯片因压力过大而损坏。
另外，为了实现电力变换器与海洋环境的隔离，上述容器需要密封，在一种示例中，可通过密封胶来实现对容器的密封。然而由于海底深度不断增加而导致容器的外部压力不断增大，进而导致容器的内外压力差不断增大；上述增大的内外压力差作用于实现密封功能的密封胶上，容易导致上述密封胶损坏，也即增大了对容器进行密封的难度。
发明内容
现在归纳本发明的一个或多个方面以便于本发明的基本理解，其中该归纳并不是本发明的扩展性纵览，且并非旨在标识本发明的某些要素，也并非旨在划出其范围。相反，该归纳的主要目的是在下文呈现更详细的描述之前用简化形式呈现本发明的一些概念。
本发明的一个方面，在于提供一种半导体模块。该半导体模块包括多个导电顶板，导电基板，多个半导体芯片，第一电源连接板，第二电源连接板及电绝缘外壳元件。多个半导体芯片设置于导电基板上，多个半导体芯片分别与多个导电顶板接触，每个半导体芯片包括与对应导电顶板电性耦合的第一电极及与导电基板电性耦合的第二电极。第一电源连接板具有多个凸出部，该多个凸出部分别与多个导电顶板电性接触。第二电源连接板与导电基板电性接触。电绝缘外壳元件用于将第一电源连接板及第二电源连接板结合在一起，该电绝缘外壳元件开设有至少一个开口。
本发明的另一个方面，在于提供一种半导体模块组件。该半导体模块组件包括至少两个半导体模块及至少一个电源互连板。每个半导体模块包括多个导电顶板，导电基板，多个半导体芯片，第一电源连接板，第二电源连接板及电绝缘外壳元件。多个半导体芯片设置于导电基板上，多个半导体芯片分别与多个导电顶板接触。每个半导体芯片包括与对应导电顶板电性耦合的第一电极及与导电基板电性耦合的第二电极。第一电源连接板具有多个凸出部，多个凸出部分别与多个导电顶板电性接触。第二电源连接板与导电基板电性接触。电绝缘外壳元件用于将第一电源连接板及第二电源连接板结合在一起，电绝缘外壳元件开设有至少一个开口。至少一个电源互连板电性接触于至少两个半导体模块中的一个半导体模块所包括的第二电源连接板与至少两个半导体模块中的另外一个半导体模块所包括的第一电源连接板之间。
本发明的另一个方面，在于提供一种半导体装置。半导体装置包括半导体模块。半导体模块包括多个导电顶板，导电基板，多个半导体芯片，第一电源连接板，第二电源连接板及电绝缘外壳元件。
多个半导体芯片设置于导电基板上，多个半导体芯片分别与多个导电顶板接触，每个半导体芯片包括与对应导电顶板电性耦合的第一电极及与导电基板电性耦合的第二电极。第一电源连接板具有多个凸出部，多个凸出部分别与多个导电顶板电性接触。第二电源连接板与导电基板电性接触。电绝缘外壳元件用于将第一电源连接板及第二电源连接板结合在一起。该半导体装置是密封的，该半导体装置的内部空间充满绝缘液体。当半导体装置的外部压力和内部压力之间具有压力差或者半导体装置的温度发生变化时，该半导体装置的体积被改变以用于补偿绝缘液体的体积变化。
本发明提供的半导体模块、半导体模块组件及半导体装置，当半导体装置的外部压力和内部压力之间具有压力差时，可以通过补偿绝缘液体的体积变化的方式，使得半导体模块的内外压力差达到平衡，可以有效地防止半导体模块因压力过大而损坏。
附图说明
通过结合附图对于本发明的实施方式进行描述，可以更好地理解本发明，在附图中：
图1为一种实施方式的半导体模块的截面侧视图。
图2为一种实施方式的半导体模块组件的截面侧视图。
图3为第一种实施方式的半导体装置的截面侧视图。
图4为第二种实施方式的半导体装置的截面侧视图。
具体实施方式
以下将描述本发明的具体实施方式，需要指出的是，在这些实施方式的具体描述过程中，为了进行简明扼要的描述，本说明书不可能对实际的实施方式的所有特征均作详尽的描述。应当可以理解的是，在任意一种实施方式的实际实施过程中，正如在任意一个工程项目或者设计项目的过程中，为了实现开发者的具体目标，为了满足系统相关的或者商业相关的限制，常常会做出各种各样的具体决策，而这也会从一种实施方式到另一种实施方式之间发生改变。此外，还可以理解的是，虽然这种开发过程中所作出的努力可能是复杂并且冗长的，然而对于与本发明公开的内容相关的本领域的普通技术人员而言，在本公开揭露的技术内容的基础上进行的一些设计，制造或者生产等变更只是常规的技术手段，不应当理解为本公开的内容不充分。
除非另作定义，权利要求书和说明书中使用的技术术语或者科学术语应当为本发明所属技术领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“一个”或者“一”等类似词语并不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现在“包括”或者“包含”前面的元件或者物件涵盖出现在“包括”或者“包含”后面列举的元件或者物件及其等同元件，并不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电气的连接，不管是直接的还是间接的。
请参阅图1，其为一种实施方式的半导体模块100的截面侧视图。半导体模块100包括第一电源连接板10、多个导电顶板12、多个半导体芯片14、导电基板15、第二电源连接板16及电绝缘外壳元件18。
在此需要说明的是，虽然图1中显示多个导电顶板12及多个半导体芯片14的数量均为三个，但是在非限定示例中，多个导电顶板12及多个半导体芯片14的数量均可以是二个或三个以上。
第一电源连接板10具有多个凸出部102。同样地，虽然图1中显示多个凸出部102的数量为三个，但是在非限定示例中，多个凸出部102的数量均可以是二个或三个以上。
多个导电顶板12分别与多个凸出部102电性接触。
多个半导体芯片14设置于导电基板15上。多个半导体芯片14分别与多个导电顶板12接触。在非限定的实施例中，每个半导体芯片14包括第一电极及第二电极，第一电极与对应的导电顶板12电性耦合，第二电极与导电基板15电性耦合。在一种实施方式中，每个导电顶板12及导电基板15均是由铜制成的。
第二电源连接板16与导电基板15电性接触。
电绝缘外壳元件18用于将第一电源连接板12及第二电源连接板16结合在一起。电绝缘外壳元件18开设有两个开口180、182。在其他实施方式中，电绝缘外壳元件18仅开设有一个开口。
两个开口180、182与柔性管25流体相通。在一种非限定的应用示例中，半导体模块100应用于海底的电力变换器中，该海底的深度可以是3000米，相对应地半导体模块100需要承受相当于300个大气压的海底水压力。
半导体模块100的内部空间充满绝缘液体90，绝缘液体90用于实现电绝缘及冷却的功能。在一个非限定的示例中，绝缘液体90包括但不限于硅油、矿物油(mineraloils)、合成油(syntheticoils)及有机脂(organicesters)。
当半导体模块100的外部压力和内部压力之间具有压力差或者半导体模块100的温度发生变化时，柔性管25的体积被改变以用于补偿绝缘液体90的体积变化。
具体地，当半导体模块100处于海底的高压力环境(例如处于3000米的海底，相对应的需要承受相当于300个大气压的水压力)时，半导体模块25的外部压力大于内部压力，柔性管25的体积减小，使得绝缘液体90从柔性管25进入半导体模块100的内部空间。又由于绝缘液体90在高压力环境下可以提供1％-2％的形变量，因此，半导体模块100的内部空间所充满的绝缘液体90处于压缩状态，使得半导体模块100的内部压力适当增大；可以抵抗半导体模块100的外部压力，使得半导体模块100的内外压力达到平衡。这样可以避免设置于导电顶板12与导电基板15之间的半导体模块100由于压力过大而损坏。
当半导体模块100由于通电工作导致发热，使得半导体模块100的温度大于预定温度时；该绝缘液体90从半导体模块100的内部空间进入柔性管25，使得柔性管25的体积增大。因此，可以避免半导体模块100的内部空间所充满的绝缘液体90由于温度升高处于膨胀状态而导致损坏半导体模块100。
进一步地，在非限定的实施例中，半导体模块100还包括多个弹簧20、栅极电路板22及绝缘层24。在此需要说明的是，虽然图1中显示多个弹簧20的数量是三个，但是在非限定示例中，多个弹簧20的数量可以是二个或三个以上。另外，弹簧20的数量还可以是一个。
每个半导体芯片14还包括第三电极。在此需要说明的是，第一电极与第三电极之间是非电性连接的，也即绝缘的。
多个弹簧20中的每个弹簧20电性接触于栅极电路板22与多个半导体芯片14中的各自一个半导体芯片14的第三电极之间，绝缘层24设置于第一电源连接板10与栅极电路板22之间。在一个非限定的示例中，绝缘层24通过绝缘螺丝固定于第一电源连接板10上。
多个弹簧20的主要作用是起导电作用，也即每个弹簧20将栅极电路板22与多个半导体芯片14中的各自一个半导体芯片14的第三电极电性连接。多个弹簧20的辅助作用是对栅极电路板22起支撑作用。
在一个非限定的示例中，多个导电顶板12、多个半导体芯片14、导电基板15、多个弹簧20、栅极电路板22及绝缘层24设置于第一电源连接板10与第二电源连接板16之间，导电基板15、每个半导体芯片14、多个导电顶板12中的各自一个导电顶板12在从第二电源连接板16到第一电源连接板10的方向上依次排列。
在非限定的实施例中，每个半导体芯片14可以是绝缘栅双极型晶体管(InsulatedGateBipolarTransistor，IGBT)或者金属氧化物半导体场效应晶体管(MetalOxideSemiconductorFieldEffectTransistor，MOSFET)。每个半导体芯片14以IGBT为例进行说明，第三电极可为栅极，第一电极可为集电极，第二电极可为发射极。当第一电源连接板10连接正极电压，第二电源连接板16连接负极电压，以及栅极电路板22给每个半导体芯片14的第三电极提供栅极驱动电压(也即半导体模块100通电工作)时，每个半导体芯片14呈导通状态。
相类似的，在另外一个非限定的实施例中，半导体模块100不包括栅极电路板22及绝缘层24，相对应地，每个半导体芯片14不包括第三电极；每个半导体芯片14可以是二极管(diode)，第一电极可为阳极，第二电极可为阴极。当第一电源连接板10连接正极电压并且第二电源连接板16连接负极电压(也即半导体模块100通电工作)时，每个半导体芯片14呈导通状态。
进一步地，半导体模块100还包括多个第一接合层(firstadhesivelayer)145及多个第二接合层146。在非限定的示例中，每个第一接合层145及每个第二接合层146均为焊锡。在此需要说明的是，虽然图1中显示多个第一接合层145及多个第二接合层146的数量均为三个，但是在非限定示例中，多个第一接合层145及多个第二接合层146的数量均可以是二个或三个以上。
每个第一接合层145设置于多个半导体芯片14中的各自一个半导体芯片14与多个导电顶板12中的各自一个导电顶板12之间，以提高两者之间的电连接性能。
每个第二接合层146设置于导电基板15与多个半导体芯片14中的各自一个半导体芯片14之间，以提高两者之间的电连接性能。
请参阅图2，其为一种实施方式的半导体模块组件200的截面侧视图。该半导体模块组件200包括至少两个半导体模块100及至少一个电源互连板202。上述至少两个半导体模块100中的每个半导体模块100与图1所示半导体模块100是相同的，在此不再赘述。
在此需要说明的是，虽然图2中显示半导体模块100的数量为3个，以及电源互连板202的数量为2个；但是在非限定示例中，半导体模块100的数量可以是2个或者3个以上，电源互连板202的数量可以1个或者2个以上。
至少一个电源互连板202接触于至少两个半导体模块100中的一个半导体模块100所包括的第二电源连接板16与至少两个半导体模块100中的另外一个半导体模块100所包括的第一电源连接板10之间，以实现多个半导体模块的级联。
与图1所示半导体模块100类似，图2所示每个半导体模块100的至少一个开口包括第一开口180及第二开口182，至少两个半导体模块100中的每个半导体模块100所包括的第一开口180及第二开口182与回路式柔性管204流体相通。
每个半导体模块100的内部空间充满绝缘液体90；当每个半导体模块100的外部压力与内部压力之间具有压力差或者每个半导体模块100的温度发生变化时，该回路式柔性管204的体积被改变以用于补偿绝缘液体90的体积变化。
具体地，当每个半导体模块100的外部压力大于内部压力时，该回路式柔性管204的体积减小，使得绝缘液体90从回路式柔性管204进入每个半导体模块的内部空间，以实现半导体模块100的内外压力平衡。
当每个半导体模块100的温度大于预定温度时，该绝缘液体90从每个半导体模块100的内部空间进入回路式柔性管204，使得回路式柔性管204的体积增大，可以避免半导体模块100的内部空间所充满的绝缘液体90由于温度升高处于膨胀状态而导致损坏半导体模块100。
请一并参阅图3，其为第一种实施方式的半导体装置300的截面侧视图。图3所示半导体装置300与图1所示半导体模块100的区别在于：图3所示半导体装置300是密封的，图3所示半导体装置300所包括的电绝缘外壳元件18没有开设两个开口180、182，图3所示半导体装置300还包括柔性件302，该柔性件302设置于电绝缘外壳元件18上。
在非限定的示例中，柔性件302可以由金属或其他可以发生形变的材料制成。金属可以是质地偏软的金属，容易发生形变。其他材料可以是复合材料，例如塑料。
半导体装置300的内部空间充满绝缘液体90；当半导体装置300的外部压力和内部压力之间具有压力差或者半导体装置300的温度发生变化时，该半导体装置300的体积被改变以用于补偿绝缘液体90的体积变化。
具体地，当半导体装置300的外部压力大于内部压力时，该柔性件302发生形变，使得半导体装置300的体积减小，进而导致绝缘液体90的体积被压缩(绝缘液体90在高压力环境下可以提供1％-2％的形变量)；使得半导体装置300的内部压力适当增大；可以抵抗半导体装置300的外部压力，使得半导体装置300的内外压力达到平衡。这样可以避免设置于导电顶板12与导电基板15之间的半导体芯片14由于压力过大而损坏。
当半导体装置300由于通电工作导致发热，使得半导体装置300的温度大于预定温度时；该柔性件302发生形变，使得半导体装置300的体积增大。因而，可以避免半导体装置300的内部空间所充满的绝缘液体90由于温度升高处于膨胀状态而导致损坏半导体装置300。
请一并参阅图4，其为第二种实施方式的半导体装置400的截面侧视图。图4所示半导体装置400与图1所示半导体模块100的区别在于：图4所示半导体装置400是密封的，图4所示半导体模块100a所包括的电绝缘外壳元件18仅开设有一个开口185，图4所示半导体装置400还包括柔性单元402，该柔性单元402与开口185流体相通。
在非限定的示例中，柔性单元402可由金属制成。金属可以是质地偏软的金属，容易发生形变。
半导体装置400的内部空间充满绝缘液体90；当半导体装置400的外部压力和内部压力之间具有压力差或者半导体装置400的温度发生变化时，该半导体装置400的体积被改变以用于补偿绝缘液体90的体积变化。
具体地，当半导体装置400的外部压力大于内部压力时，该柔性单元402的体积减小，使得绝缘液体90从柔性单元402进入半导体模块100a的内部空间；使得半导体模块100a内的绝缘液体90被压缩，从而可以避免设置于导电顶板12与导电基板15之间的半导体芯片14由于压力过大而损坏。
当半导体装置400的温度大于预定温度时，该绝缘液体90从半导体模块100a的内部空间进入柔性单元402，使得柔性单元402的体积增大。因而，可以避免半导体装置400的内部空间所充满的绝缘液体90由于温度升高处于膨胀状态而导致损坏半导体装置400。
虽然结合特定的实施方式对本发明进行了说明，但本领域的技术人员可以理解，对本发明可以作出许多修改和变型。因此，要认识到，权利要求书的意图在于覆盖在本发明真正构思和范围内的所有这些修改和变型。

Claims (14)

1.一种半导体模块，其包括：
多个导电顶板；
导电基板；
设置于导电基板上的多个半导体芯片，该多个半导体芯片分别与多个导电顶板接触；每个半导体芯片包括与对应导电顶板电性耦合的第一电极及与导电基板电性耦合的第二电极；
第一电源连接板，其具有多个凸出部；该多个凸出部分别与多个导电顶板电性接触；
第二电源连接板，其与导电基板电性接触；及
电绝缘外壳元件，用于将第一电源连接板及第二电源连接板结合在一起，该电绝缘外壳元件开设有至少一个开口。
2.如权利要求1所述的半导体模块，其特征在于：该半导体模块的内部空间充满绝缘液体，该至少一个开口与柔性管流体相通；当半导体模块的外部压力和内部压力之间具有压力差或者半导体模块的温度发生变化时，该柔性管的体积被改变以用于补偿绝缘液体的体积变化。
3.如权利要求2所述的半导体模块，其特征在于：当半导体模块的外部压力大于内部压力时，该柔性管的体积减小，使得绝缘液体从柔性管进入半导体模块的内部空间；当半导体模块的温度大于预定温度时，该绝缘液体从半导体模块的内部空间进入柔性管，使得柔性管的体积增大。
4.如权利要求1所述的半导体模块，其特征在于：该半导体模块还包括栅极电路板、绝缘层及一个或多个弹簧，每个半导体芯片还包括第三电极，该一个或多个弹簧中的每个弹簧电性接触于栅极电路板与多个半导体芯片中的各自一个半导体芯片的第三电极之间，该绝缘层设置于第一电源连接板与栅极电路板之间。
5.如权利要求4所述的半导体模块，其特征在于：该多个导电顶板、导电基板、多个半导体芯片、栅极电路板、绝缘层及一个或多个弹簧设置于第一电源连接板与第二电源连接板之间。
6.一种半导体模块组件，其包括：
至少两个半导体模块；及
至少一个电源互连板；
每个半导体模块包括：
多个导电顶板；
导电基板；
设置于导电基板上的多个半导体芯片，该多个半导体芯片分别与多个导电顶板接触；每个半导体芯片包括与对应导电顶板电性耦合的第一电极及与导电基板电性耦合的第二电极；
第一电源连接板，其具有多个凸出部；该多个凸出部分别与多个导电顶板电性接触；
第二电源连接板，其与导电基板电性接触；及
电绝缘外壳元件，用于将第一电源连接板及第二电源连接板结合在一起，该电绝缘外壳元件开设有至少一个开口；
其中，至少一个电源互连板电性接触于至少两个半导体模块中的一个半导体模块所包括的第二电源连接板与至少两个半导体模块中的另外一个半导体模块所包括的第一电源连接板之间。
7.如权利要求6所述的半导体模块组件，其特征在于：每个半导体模块的至少一个开口包括第一开口及第二开口，该至少两个半导体模块中的每个半导体模块所包括的第一开口及第二开口与回路式柔性管流体相通。
8.如权利要求7所述的半导体模块组件，其特征在于：每个半导体模块的内部空间充满绝缘液体；当每个半导体模块的外部压力与内部压力之间具有压力差或者每个半导体模块的温度发生变化时，该回路式柔性管的体积被改变以用于补偿绝缘液体的体积变化。
9.如权利要求8所述的半导体模块组件，其特征在于：当每个半导体模块的外部压力大于内部压力时，该回路式柔性管的体积减小，使得绝缘液体从回路式柔性管进入每个半导体模块的内部空间；当每个半导体模块的温度大于预定温度时，该绝缘液体从每个半导体模块的内部空间进入回路式柔性管，使得回路式柔性管的体积增大。
10.如权利要求6所述的半导体模块组件，其特征在于：每个半导体模块还包括栅极电路板、绝缘层及一个或多个弹簧；每个半导体芯片还包括第三电极，该一个或多个弹簧中的每个弹簧电性接触于栅极电路板与多个半导体芯片中的各自一个半导体芯片的第三电极之间；该绝缘层设置于第一电源连接板与栅极电路板之间。
11.一种半导体装置，其包括：
半导体模块，该半导体模块包括：
多个导电顶板；
导电基板；
设置于导电基板上的多个半导体芯片，该多个半导体芯片分别与多个导电顶板接触；每个半导体芯片包括与对应导电顶板电性耦合的第一电极及与导电基板电性耦合的第二电极；
第一电源连接板，其具有多个凸出部；该多个凸出部分别与多个导电顶板电性接触；
第二电源连接板，其与导电基板电性接触；及
电绝缘外壳元件，用于将第一电源连接板及第二电源连接板结合在一起；
该半导体装置是密封的，该半导体装置的内部空间充满绝缘液体；当半导体装置的外部压力和内部压力之间具有压力差或者半导体装置的温度发生变化时，该半导体装置的体积被改变以用于补偿绝缘液体的体积变化。
12.如权利要求11所述的半导体装置，其特征在于：该半导体装置还包括柔性单元；该电绝缘外壳元件开设有开口，该开口与柔性单元流体相通；当半导体装置的外部压力大于内部压力时，该柔性单元的体积减小，使得绝缘液体从柔性单元进入半导体模块的内部空间；当半导体装置的温度大于预定温度时，该绝缘液体从半导体模块的内部空间进入柔性单元，使得柔性单元的体积增大。
13.如权利要求11所述的半导体装置，其特征在于：该半导体装置还包括柔性件，该柔性件设置于电绝缘外壳元件上；当半导体装置的外部压力大于内部压力时，该柔性件发生形变，使得半导体装置的体积减小；当半导体装置的温度大于预定温度时，该柔性件发生形变，使得半导体装置的体积增大。
14.如权利要求11所述的半导体装置，其特征在于：该半导体模块还包括栅极电路板、绝缘层及一个或多个弹簧，每个半导体芯片还包括第三电极，一个或多个弹簧中的每个弹簧电性接触于栅极电路板与多个半导体芯片中的各自一个半导体芯片的第三电极之间；该绝缘层设置于第一电源连接板与栅极电路板之间。
CN201410362946.2A 2014-07-28 2014-07-28 半导体模块、半导体模块组件及半导体装置 Expired - Fee Related CN105336723B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201410362946.2A CN105336723B (zh) 2014-07-28 2014-07-28 半导体模块、半导体模块组件及半导体装置
EP15178253.9A EP2980848A1 (en) 2014-07-28 2015-07-24 Semiconductor module and semiconductor module package
BR102015017848A BR102015017848A2 (pt) 2014-07-28 2015-07-27 módulo semicondutor, pacote de módulo semicondutor e aparelho de módulo semicondutor
US14/811,394 US9484275B2 (en) 2014-07-28 2015-07-28 Semiconductor module for high pressure applications

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410362946.2A CN105336723B (zh) 2014-07-28 2014-07-28 半导体模块、半导体模块组件及半导体装置

Publications (2)

Publication Number Publication Date
CN105336723A true CN105336723A (zh) 2016-02-17
CN105336723B CN105336723B (zh) 2018-09-14

Family

ID=53724065

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410362946.2A Expired - Fee Related CN105336723B (zh) 2014-07-28 2014-07-28 半导体模块、半导体模块组件及半导体装置

Country Status (4)

Country Link
US (1) US9484275B2 (zh)
EP (1) EP2980848A1 (zh)
CN (1) CN105336723B (zh)
BR (1) BR102015017848A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108231696A (zh) * 2017-02-08 2018-06-29 日月光半导体制造股份有限公司 半导体装置封装及其制造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6314731B2 (ja) * 2014-08-01 2018-04-25 株式会社ソシオネクスト 半導体装置及び半導体装置の製造方法
US10002821B1 (en) 2017-09-29 2018-06-19 Infineon Technologies Ag Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates
CN113053831B (zh) * 2019-12-27 2023-09-05 株洲中车时代半导体有限公司 一种压接式igbt模块及功率半导体器件
EP4071791A1 (en) * 2021-04-09 2022-10-12 Hitachi Energy Switzerland AG Spring element for a press contact in a power semiconductor module, and method for manufacturing the same
EP4143878A1 (en) * 2021-07-19 2023-03-08 Dynex Semiconductor Limited Power semiconductor device with thermal coupler

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2518812A1 (fr) * 1981-12-23 1983-06-24 Cit Alcatel Circuit hybride resistant en pression
CN1149202A (zh) * 1995-08-17 1997-05-07 Abb研究有限公司 功率半导体组件
US20040245548A1 (en) * 2003-04-10 2004-12-09 Semikron Elektronik Gmbh Power semiconductor module
CN102237344A (zh) * 2010-04-30 2011-11-09 通用电气公司 具有电力覆盖互连的压装模块
CN103528182A (zh) * 2012-07-05 2014-01-22 杨泰和 温能体对流体作振动位移热传的方法与结构装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989009958A1 (en) 1988-04-08 1989-10-19 Hitachi, Ltd. Semiconductor module, its cooling system and computer using the cooling system
JPH04352457A (ja) 1991-05-30 1992-12-07 Mitsubishi Electric Corp 圧接型半導体装置及びその製造方法
JP3319569B2 (ja) 1996-05-31 2002-09-03 株式会社東芝 圧接型半導体装置
KR100750018B1 (ko) 2000-07-26 2007-08-16 동경 엘렉트론 주식회사 반도체 기판의 처리를 위한 고압 챔버 및 반도체 기판의고압 처리를 위한 장치
KR100777892B1 (ko) 2001-04-10 2007-11-21 동경 엘렉트론 주식회사 반도체 기판 처리용 고압 챔버
EP1318545A1 (de) 2001-12-06 2003-06-11 Abb Research Ltd. Leistungshalbleiter-Submodul und Leistungshalbleiter-Modul
EP1403923A1 (en) * 2002-09-27 2004-03-31 Abb Research Ltd. Press pack power semiconductor module
US7141884B2 (en) 2003-07-03 2006-11-28 Matsushita Electric Industrial Co., Ltd. Module with a built-in semiconductor and method for producing the same
US7040016B2 (en) * 2003-10-22 2006-05-09 Hewlett-Packard Development Company, L.P. Method of fabricating a mandrel for electroformation of an orifice plate
JP3988735B2 (ja) * 2004-03-15 2007-10-10 日立金属株式会社 半導体装置及びその製造方法
US7254034B2 (en) * 2004-12-15 2007-08-07 Lucent Technologies Inc. Thermal management for shielded circuit packs
US7829386B2 (en) 2005-08-17 2010-11-09 General Electric Company Power semiconductor packaging method and structure
US7262444B2 (en) 2005-08-17 2007-08-28 General Electric Company Power semiconductor packaging method and structure
EP2017891A1 (en) 2007-07-20 2009-01-21 ABB Technology AG Semiconductor module
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
US20110097494A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid conveyance system including flexible retaining mechanism
US8237171B2 (en) 2010-02-09 2012-08-07 Microsemi Corporation High voltage high package pressure semiconductor package
EP2560203A1 (en) 2011-08-17 2013-02-20 ABB Technology AG Power semiconductor arrangement
US9275926B2 (en) * 2013-05-03 2016-03-01 Infineon Technologies Ag Power module with cooling structure on bonding substrate for cooling an attached semiconductor chip

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2518812A1 (fr) * 1981-12-23 1983-06-24 Cit Alcatel Circuit hybride resistant en pression
CN1149202A (zh) * 1995-08-17 1997-05-07 Abb研究有限公司 功率半导体组件
US20040245548A1 (en) * 2003-04-10 2004-12-09 Semikron Elektronik Gmbh Power semiconductor module
CN102237344A (zh) * 2010-04-30 2011-11-09 通用电气公司 具有电力覆盖互连的压装模块
CN103528182A (zh) * 2012-07-05 2014-01-22 杨泰和 温能体对流体作振动位移热传的方法与结构装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108231696A (zh) * 2017-02-08 2018-06-29 日月光半导体制造股份有限公司 半导体装置封装及其制造方法
CN108231696B (zh) * 2017-02-08 2019-08-09 日月光半导体制造股份有限公司 半导体装置封装及其制造方法

Also Published As

Publication number Publication date
CN105336723B (zh) 2018-09-14
US9484275B2 (en) 2016-11-01
EP2980848A1 (en) 2016-02-03
US20160027710A1 (en) 2016-01-28
BR102015017848A2 (pt) 2016-02-02

Similar Documents

Publication Publication Date Title
CN105336723A (zh) 半导体模块、半导体模块组件及半导体装置
CN104900609A (zh) 封装结构
CN104900634A (zh) 封装结构及其所适用的堆栈式封装模块
CN101794742B (zh) 按照压力接触方式实施的功率半导体模块
CN104184108A (zh) 直流断路器及其控制方法
CN107679353B (zh) 模拟压接式igbt器件失效短路机理的有限元建模方法
CN101764162A (zh) 一种金属氧化物场效应二极管及mos二极管
CN108494048A (zh) 无线充电装置
TW200625724A (en) Anisotropic conductive connector for wafer inspection, production method and application therefor
CN203537663U (zh) 一种pcb基板
CN105430865A (zh) 一种印制电路板散热结构的制造方法及印制电路板
CN105472945A (zh) 电机控制器、电机及电动车
CN102254928B (zh) 像素结构及电性桥接结构
CN105684156A (zh) 齐纳二极管
CN105527771A (zh) 阵列基板及液晶显示装置
CN209897342U (zh) 一种电路板组件和电子设备
CN202796910U (zh) 具有冷却装置的功率电子系统
CN103338582A (zh) 软性电路板以及使用该软性电路板的电子装置
CN203871516U (zh) 电连接器
CN203218068U (zh) 安装有变压器的水下密封盒
CN106257651A (zh) 电致动器
CN204885192U (zh) 太阳电池
CN107567176A (zh) 电子组件和用于制造电子组件的方法
CN107507814B (zh) 包括开关器件的功率半导体模块
CN205213142U (zh) 散热器上晶体管引脚防护装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180914

Termination date: 20200728