CN105323509B - 光电转换装置和光电转换系统 - Google Patents

光电转换装置和光电转换系统 Download PDF

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Publication number
CN105323509B
CN105323509B CN201510462803.3A CN201510462803A CN105323509B CN 105323509 B CN105323509 B CN 105323509B CN 201510462803 A CN201510462803 A CN 201510462803A CN 105323509 B CN105323509 B CN 105323509B
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China
Prior art keywords
photoelectric conversion
signal
potential
electrode
node
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Expired - Fee Related
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CN201510462803.3A
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English (en)
Chinese (zh)
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CN105323509A (zh
Inventor
桥本诚二
高桥秀和
古林笃
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201510462803.3A 2014-07-31 2015-07-31 光电转换装置和光电转换系统 Expired - Fee Related CN105323509B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-156783 2014-07-31
JP2014156783A JP6385187B2 (ja) 2014-07-31 2014-07-31 光電変換装置、光電変換システム

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CN105323509A CN105323509A (zh) 2016-02-10
CN105323509B true CN105323509B (zh) 2019-02-26

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US (1) US10091444B2 (cg-RX-API-DMAC7.html)
EP (1) EP2981069B1 (cg-RX-API-DMAC7.html)
JP (1) JP6385187B2 (cg-RX-API-DMAC7.html)
CN (1) CN105323509B (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7000020B2 (ja) * 2016-11-30 2022-01-19 キヤノン株式会社 光電変換装置、撮像システム
JP2020031258A (ja) * 2016-12-27 2020-02-27 パナソニックＩｐマネジメント株式会社 撮像装置、カメラ、及び撮像方法
JP6907029B2 (ja) * 2017-05-31 2021-07-21 キヤノン株式会社 撮像装置
US11595596B2 (en) 2018-02-07 2023-02-28 Sony Semiconductor Solutions Corporation Solid-state image device and imaging apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902886A (en) * 1989-01-23 1990-02-20 Hewlett-Packard Company Noise reduction for photodiode arrays
CN1391288A (zh) * 2001-06-07 2003-01-15 佳能株式会社 射线照相图象摄取设备及驱动该设备的方法
CN102480601A (zh) * 2010-11-22 2012-05-30 佳能株式会社 图像拾取系统及其控制方法
JP2014078870A (ja) * 2012-10-11 2014-05-01 Fujifilm Corp 固体撮像素子および撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0992809A (ja) * 1995-09-27 1997-04-04 Nikon Corp 固体撮像装置
JPH09275201A (ja) 1996-04-04 1997-10-21 Fuji Xerox Co Ltd 固体撮像素子
JP2002350551A (ja) 2001-05-25 2002-12-04 Canon Inc 放射線撮像装置及びそれを用いた放射線撮像システム
JP3740435B2 (ja) * 2001-06-07 2006-02-01 キヤノン株式会社 放射線撮像装置とその駆動方法、及び放射線撮像システム
US20090224351A1 (en) * 2002-08-27 2009-09-10 E-Phocus, Inc CMOS sensor with approximately equal potential photodiodes
JP4307230B2 (ja) * 2003-12-05 2009-08-05 キヤノン株式会社 放射線撮像装置及び放射線撮像方法
JP2005303284A (ja) * 2004-03-17 2005-10-27 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子
CN102017147B (zh) * 2007-04-18 2014-01-29 因维萨热技术公司 用于光电装置的材料、系统和方法
JP5020840B2 (ja) * 2007-06-26 2012-09-05 富士フイルム株式会社 画像検出装置および画像検出器の駆動方法
US8022493B2 (en) * 2007-09-27 2011-09-20 Dongbu Hitek Co., Ltd. Image sensor and manufacturing method thereof
JP5968146B2 (ja) * 2012-07-31 2016-08-10 キヤノン株式会社 固体撮像装置およびカメラ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902886A (en) * 1989-01-23 1990-02-20 Hewlett-Packard Company Noise reduction for photodiode arrays
CN1391288A (zh) * 2001-06-07 2003-01-15 佳能株式会社 射线照相图象摄取设备及驱动该设备的方法
CN102480601A (zh) * 2010-11-22 2012-05-30 佳能株式会社 图像拾取系统及其控制方法
JP2014078870A (ja) * 2012-10-11 2014-05-01 Fujifilm Corp 固体撮像素子および撮像装置

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EP2981069B1 (en) 2018-12-05
US20160037116A1 (en) 2016-02-04
US10091444B2 (en) 2018-10-02
EP2981069A1 (en) 2016-02-03
JP2016034101A (ja) 2016-03-10
JP6385187B2 (ja) 2018-09-05
CN105323509A (zh) 2016-02-10

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Granted publication date: 20190226