CN105321968B - 光电转换装置和图像拾取系统 - Google Patents

光电转换装置和图像拾取系统 Download PDF

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Publication number
CN105321968B
CN105321968B CN201510294246.9A CN201510294246A CN105321968B CN 105321968 B CN105321968 B CN 105321968B CN 201510294246 A CN201510294246 A CN 201510294246A CN 105321968 B CN105321968 B CN 105321968B
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China
Prior art keywords
photoelectric conversion
light
refractive index
light receiving
refractive
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CN201510294246.9A
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Chinese (zh)
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CN105321968A (zh
Inventor
加藤太朗
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Automatic Focus Adjustment (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Focusing (AREA)
CN201510294246.9A 2014-06-02 2015-06-02 光电转换装置和图像拾取系统 Active CN105321968B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-114434 2014-06-02
JP2014114434A JP6444066B2 (ja) 2014-06-02 2014-06-02 光電変換装置および撮像システム

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CN105321968A CN105321968A (zh) 2016-02-10
CN105321968B true CN105321968B (zh) 2018-07-06

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US (1) US10276612B2 (enExample)
JP (1) JP6444066B2 (enExample)
CN (1) CN105321968B (enExample)

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JP6667431B2 (ja) 2016-12-27 2020-03-18 キヤノン株式会社 撮像装置、撮像システム
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EP4160686A4 (en) * 2020-05-26 2023-10-25 Sony Semiconductor Solutions Corporation Ranging device

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CN102637711A (zh) * 2011-02-09 2012-08-15 佳能株式会社 光电转换元件、及使用该元件的光电转换装置和成像系统

Also Published As

Publication number Publication date
CN105321968A (zh) 2016-02-10
US10276612B2 (en) 2019-04-30
JP2015228468A (ja) 2015-12-17
JP6444066B2 (ja) 2018-12-26
US20150349007A1 (en) 2015-12-03

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