CN105308744A - 带有导线键合的半导体封装件 - Google Patents

带有导线键合的半导体封装件 Download PDF

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CN105308744A
CN105308744A CN201480034338.7A CN201480034338A CN105308744A CN 105308744 A CN105308744 A CN 105308744A CN 201480034338 A CN201480034338 A CN 201480034338A CN 105308744 A CN105308744 A CN 105308744A
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bonding line
bonding
substrate
electrically connected
bond site
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A·P·乔希
G·拉金德兰
B·帕克斯
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

一种半导体封装件10具有管芯12，管芯12具有多个电连续管芯导线键合部位30，所述多个电连续管芯导线键合部位包括第一管芯导线键合部位32和第二管芯导线键合部位34。该封装件包括基板22，基板22具有多个电连续基板导线键合部位40，所述多个电连续基板导线键合部位包括第一基板导线键合部位42和第二基板导线键合部位44。第一键合线52被连接在第一管芯导线键合部位32与第一基板导线键合部位42之间，并且第二键合线54被连接在第二管芯导线键合部位34与第二基板导线键合部位44之间。第一和第二键合线52、54位于相邻的基本平行的键合线平面AA、BB内。第二键合线54相对于第一键合线52充分偏移。

Description

带有导线键合的半导体封装件
背景技术
导线键合是长久以来用于连接集成电路封装件的电气元件的方法。在导线键合连接中，薄键合线的相对端被焊接到将被电连接的两个不同组件的导电接触区。为了机械可靠性、热性能和易于连接到印刷电路板(PCB)，导线键合封装件诸如四方扁平无引脚封装(QFN)和四方扁平封装(QFP)比晶片级封装(WSP)和倒装芯片球栅阵列(FCBGA)封装更为优选。与WSP和FCBGA封装不同，QFN和QFP封装件具有使用键合线制成的接地线和信号连接件。与典型WSP接地连接件的约70pH电感不同，单个键合线接地线的典型电感是大约0.7nH。
然而，存在与键合线封装件中的高寄生电感相关的问题。这些问题包括：功率放大器(PA)和噪声因数(NF)的效率退化；低噪声放大器(LNA)的退化；直流-直流(DCDC)变换器的效率退化；DCDC变换器的高纹波水平；低压降稳压器(LDO)的电源抑制比(PSRR)退化；功能性问题，诸如像PA和LNA的射频(RF)块的不稳定性；功能性问题，比如中频(IF)级和LDO中的振铃和振荡；以及各种电路块之间的隔离程度降低。
减小寄生电感的一种常规方法是当连接两个电气组件如管芯和引线框时，使用并联电连接的多个导线而不是单个导线。这样一来，通常基本相同大小和形状的导线被布置在紧密间隔开的平行平面上。然而，这种布置的问题是由流过紧密相邻的导线的电流导致的互耦k抵消了使用多个导线将会发生的寄生电感的减少。
附图说明
图1是集成电路封装件的俯视平面图。
图2是图1的集成电路封装件的侧面正视图。
图3是集成电路封装件的第二实施例的俯视平面图。
图4是图3的集成电路封装件的侧面正视图。
图5是将管芯电连接到基板的方法的流程图。
图6是定义在本说明书中使用的某些术语时所使用的投影区域的图示。
具体实施方式
图1示出具有管芯12和基板22的集成电路封装件10。管芯12可以被安装在基板22上。管芯12具有多个电连续导线键合部位(site)30，电连续导线键合部位30可以包括第一部位32、第二部位34、第三部位36和第四部位38。导线键合部位30可以是与公共导体接触的管芯接触焊盘。在另一个实施例中，导线键合部位30可以被管芯12的导电性顶表面部分上的部位间隔开。在图1所示的实施例中，多个导线键合部位30被定位在管芯12的顶表面14上的单个列中。
在由图1和图2所示的集成电路封装件中，基板22可以具有多个电连续(短接在一起)导线键合部位40，所述电连续导线键合部位40可以包括第一导线键合部位42、第二导线键合部位44、第三导线键合部位46和第四导线键合部位48。在一个实施例中，基板22是引线框，并且所述导线键合部位被引线框的物理部分间隔开。基板22具有顶表面24和相对的底表面26。可以在基板22的顶表面24上提供多个基板导线键合部位40。在一个实施例中，管芯12的底表面16被键合到基板22的顶表面24。
多个键合线50(例如，单独的键合线52、54、56、58)中的每一个具有第一端62和第二端64。键合线50可以被连接在管芯12上的多个电连续导线键合部位30和基板22上的多个电连续导线键合部位40之间。多个管芯导线键合部位30和多个基板导线键合部位40可以被布置为使得多个键合线50被定位在基本垂直于管芯的顶表面14和基板22的顶表面24延伸的基本平行的键合线平面AA、BB、CC和DD中。虽然本文中仅例示了四个键合线50，但应当理解的是可以使用布置成并行键合线的任意数量的键合线。
在图3和图4的实施例中，管芯10和基板22的一般结构可以与图1和图2中例示的相同，区别在于基板接触焊盘41、43、45、47是交错的并被定位成两行，而不是如图1所示的单行。
在图2和图4中，为了避免附图杂乱，仅示出第一键合线52、54和第二键合线51、53。在图1和图2以及图3和图4两个说明性实施例中，多个键合线50具有以充分偏移的关系定位的相邻导线，即第二键合线相对于第一键合线充分偏移，第三键合线相对于第二键合线充分偏移，并且第四键合线相对于第三键合线充分偏移，反之亦然。
现在将参考图6解释充分偏移和在本说明书中使用的其他术语的含义。键合线1或2的投影区域是键合线如键合线1、管芯3和基板4所对向(subtended)的区域在正交于基板的平面(平行于键合线的平面)上的投影。偏移率是两个键合线1、2的投影区域的交集与两个键合线1、2的投影区域的并集的比值的补数。在图6中，虽然没有在附图中明确提及，但“A”是第一键合线的投影区域，即在导线1下面且在水平线3和4上面的区域。“B”是第二键合线的投影区域，即在导线2下面且在水平线3和4上面的区域。偏移率“S”可以在数学上被定义为：
S＝1-[(A∩B)/(A∪B)]
其中(A∩B)＝(带x的区域)，并且(A∪B)＝(带x的区域)+(带点的区域)+(带正方形的区域)。
图2是垂直于键合线平面AA、BB、CC、DD的视图，其示出了键合线52和54具有交叠的投影轮廓，即每个导线到平行于键合线平面AA、BB等的公共投影平面上的投影。这些投影轮廓以及管芯12和基板22的顶表面依次限定轮廓封闭区域“a”、“b”和“c”。第一投影区域“a”开始于与键合线附接点32、34对齐的点72并且结束于两个导线52、54投影交叠的点73。在点72和73之间的导线52和54的投影轮廓的部分限定了封闭区域“a”。投影轮廓封闭区域“b”从点73延伸到与基板键合线接触部位42和44对齐的点74，并且是由在点73和74之间延伸的导线52和54的投影轮廓的部分界定的区域。投影轮廓封闭区域“c”具有由导线52和54的两段投影轮廓中的较低者限定的上边界，所述两段投影轮廓即在点72与点73之间延伸的导线54的投影轮廓段以及在点73与点74之间延伸的导线52的投影轮廓段。封闭区域“c”的下边界由与管芯12的顶表面14以及基板22的顶表面24相关的水平线限定，所述水平线直接位于上述导线52和54的投影轮廓段的下面。如在本说明书中使用的术语相邻键合线的偏移率在一种情况下是指投影轮廓封闭区域“a”和“b”的总和除以所有封闭区域“a”和“b”以及“c”的总和。因此，在诸如图1和图2所示的键合线配置中，偏移率＝1-[c/(a+b+c)]。在这种情况下，在侧立面图中，第一和第二基板导线键合部位是对齐的，并且因此代表单个点74。
图3和图4示出键合线51、53、55、57的相邻键合线如51、53终止于基板22上的键合线接触部位41、43的情况，如图4所示，键合线接触部位41、43未对齐，并且因此当从侧面(即在垂直于键合线平面AA、BB等的方向)观察时，键合线接触部位41、43投影为两个不同的点85、86。在该实施例中，两个键合线51、53的投影轮廓限定了四个投影轮廓封闭区域“p”、“q”、“r”、“s”。图4所示的投影轮廓中的两个导线51、53开始于与管芯接触焊盘32、34相关联的公共点82。在图4中，导线51、53的投影轮廓再次在点83处交叠。两个导线51、53的投影在点84处第二次相交。点85与第二基板导线键合部位41对齐，并且点86与基板导线键合部位43对齐。区域“p”由在点82与点83之间延伸的两个导线51、53的投影限定。区域“q”是在投影点83和84之间延伸的导线51和53的投影之间的区域。区域“r”是由在点84与点86之间延伸的导线51以及在点84与点86之间延伸的导线53以及在点85与点86之间延伸的基板22的顶表面24的部分所限定的区域。区域“s”由在点82与点83之间的导线53的投影部分、在点83与点84之间的导线51的投影、在点84与点86之间的导线53的投影以及由位于这些导线投影部分下面的管芯和基板的顶表面14和24所限定的线来限定。因此，在一个键合线51与第二键合线53相比终止于基板上不同点处的情况下，管芯12的顶表面14和基板22的顶表面24的轮廓限定了两个轮廓封闭区域的部分，在这种情况下为区域“r”和“s”。其他区域“p”和“q”由如图1和图2中的导线段单独限定。在图3和图4所示的情况下，偏移率等于“p”、“q”和“r”的面积总和除以所有的“p”、“q”、“r”和“s”的面积总和。因此，对于键合线51和53，偏移率＝1-[s/(p+q+r+s)]。
由于在本说明书中使用了术语“充分偏移”，如果：a)一个键合线比另一个导线长至少20％，或者b)两个键合线的偏移率是至少约0.4，或者c)同时a)和b)，则在基本平行的平面中的两个相邻键合线是充分偏移的。
在图1-图4的装配件的一些实施例中，用球形键合将键合线50的第一端62焊接到管芯12的顶表面14，并且用缝合键合将键合线50的第二端64焊接到基板22的顶表面24。键合线的直径通常在从约20μm到约30μm的范围内。键合线50可以由金、铜、银或铝制成。所有的键合线50可以具有约0.7mm的最小长度。相邻的键合线平面如AA、BB等可以被间隔开约50μm到约100μm。
如由图1和图2中虚线部分所示的，管芯12和基板22的一些部分(可以是引线框)可以被包封在包封剂的保护层110中，包封剂诸如铸模化合物。在一个实施例中，包括管芯12、基板22和包封层110以及可能的其他电子元件(未示出)的集成电路封装件10可以是四方扁平无引脚(QFN)封装件。
图5示出将管芯电连接到基板的方法。如在202处所示，该方法包括用布置在大致平行的平面中的多个键合线将管芯上的多个电连续部位连接到基板上的多个电连续部位。如在204处所示，该方法还包括将多个键合线中的相邻键合线布置成处于充分偏移关系。
本领域技术人员应当理解，在所要求保护的本发明的范围内，可以对上述实施例作出修改，并且很多其他实施例也是可能的。

Claims (17)

1.一种半导体封装件，其包括：
管芯，其具有多个电连续管芯导线键合部位，所述多个电连续管芯导线键合部位包括第一管芯导线键合部位和第二管芯导线键合部位；
基板，其具有多个电连续基板导线键合部位，所述多个电连续基板导线键合部位包括第一基板导线键合部位和第二基板导线键合部位；
第一键合线，其被连接在第一管芯导线键合部位与所述第一基板导线键合部位之间；
第二键合线，其被连接在所述第二管芯导线键合部位与所述第二基板导线键合部位之间，所述第一键合线和所述第二键合线位于相邻的基本平行的键合线平面内；以及
其中所述第二键合线相对于所述第一键合线是充分偏移的。
2.根据权利要求1所述的封装件，其中所述第一键合线比所述第二键合线至少长20％。
3.根据权利要求2所述的封装件，其中所述第一键合线和所述第二键合线具有至少约0.4的偏移率。
4.根据权利要求1所述的封装件，其中所述第一键合线和所述第二键合线具有至少约0.4的偏移率。
5.根据权利要求1所述的封装件，其中所述多个电连续导线键合部位中的至少一些被布置成交错的列。
6.根据权利要求1所述的半导体封装件，其中所述相邻的基本平行的键合线平面被间隔开约50μm至100μm之间的距离。
7.一种形成集成电路封装件的方法，其包括：
将管芯连接到基板，其包括：
用布置在大致平行的平面中的多个键合线将管芯上的多个电连续部位连接到基板上的多个电连续部位；以及
布置所述多个键合线中的相邻键合线处于充分偏移的关系。
8.根据权利要求7所述的方法，其中所述布置包括使所述第二键合线比所述第一键合线至少短20％。
9.根据权利要求7所述的方法，其中所述布置包括布置所述第一键合线和所述第二键合线，使得它们具有至少0.4的偏移率。
10.根据权利要求7所述的方法，其中连接所述多个电连续部位包括将所述键合线的第一端球形键合到所述管芯上的所述多个电连续部位。
11.根据权利要求7所述的方法，其中连接所述多个电连续部位包括将所述键合线的第二端缝合键合到所述基板上的所述多个电连续部位。
12.根据权利要求7所述的方法，其中连接所述多个电连续部位包括将所述多个键合线中的相邻键合线定位在约50μm至100μm之间。
13.根据权利要求7所述的方法，其进一步包括将所述管芯、所述多个键合线和至少一部分所述基板包封到铸模复合物中。
14.一种集成电路封装件，其包括：
管芯，其具有多个电连续管芯导线键合部位，所述多个电连续管芯导线键合部位包括第一管芯导线键合部位和第二管芯导线键合部位；
引线框，其具有多个电连续基板导线键合部位，所述多个电连续基板导线键合部位包括第一基板导线键合部位和第二基板导线键合；
第一键合线，其连接在第一管芯导线键合部位和所述第一基板导线键合部位之间；
第二键合线，其连接在所述第二管芯导线键合部位和所述第二基板导线键合部位之间，所述第一键合线和所述第二键合线位于相邻的基本平行的键合线平面内；其中所述第二键合线相对于所述第一键合线是充分偏移的；以及
包封层，其覆盖所述键合线和所述管芯以及至少一部分所述引线框。
15.根据权利要求14所述的封装件，其中所述第一键合线比所述第二键合线至少长20％。
16.根据权利要求14所述的封装件，其中所述第一键合线和所述第二键合线具有至少约0.4的偏移率。
17.根据权利要求14所述的封装件，其中所述第一键合线平面和所述第二键合线平面被间隔开约50μm至100μm之间。
CN201480034338.7A 2013-04-19 2014-04-21 带有导线键合的半导体封装件 Pending CN105308744A (zh)

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