CN105304804B - A kind of LED light source module and preparation method thereof of leading portion light splitting - Google Patents
A kind of LED light source module and preparation method thereof of leading portion light splitting Download PDFInfo
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- CN105304804B CN105304804B CN201510772796.7A CN201510772796A CN105304804B CN 105304804 B CN105304804 B CN 105304804B CN 201510772796 A CN201510772796 A CN 201510772796A CN 105304804 B CN105304804 B CN 105304804B
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- blue chip
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000003292 glue Substances 0.000 claims abstract description 59
- 125000006850 spacer group Chemical group 0.000 claims abstract description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 32
- 239000000843 powder Substances 0.000 claims description 28
- 238000012360 testing method Methods 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000004831 Hot glue Substances 0.000 claims description 8
- 239000004425 Makrolon Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229920000515 polycarbonate Polymers 0.000 claims description 8
- 239000000741 silica gel Substances 0.000 claims description 8
- 229910002027 silica gel Inorganic materials 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 8
- 239000003381 stabilizer Substances 0.000 claims description 8
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 6
- 229930195725 Mannitol Natural products 0.000 claims description 6
- 239000003963 antioxidant agent Substances 0.000 claims description 6
- 230000003078 antioxidant effect Effects 0.000 claims description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 claims description 6
- 229910000399 iron(III) phosphate Inorganic materials 0.000 claims description 6
- 235000010355 mannitol Nutrition 0.000 claims description 6
- 239000000594 mannitol Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 2
- ZGBSOTLWHZQNLH-UHFFFAOYSA-N [Mg].S(O)(O)(=O)=O Chemical compound [Mg].S(O)(O)(=O)=O ZGBSOTLWHZQNLH-UHFFFAOYSA-N 0.000 claims 1
- 241001025261 Neoraja caerulea Species 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 16
- 239000000047 product Substances 0.000 description 14
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 5
- 235000019341 magnesium sulphate Nutrition 0.000 description 5
- 125000005624 silicic acid group Chemical class 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 230000032683 aging Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- JKIJEFPNVSHHEI-UHFFFAOYSA-N Phenol, 2,4-bis(1,1-dimethylethyl)-, phosphite (3:1) Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C JKIJEFPNVSHHEI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of LED light source module of leading portion light splitting, including holder, the top of the holder is equipped with heat radiating cup, the heat radiating cup bottom is equipped with copper billet and electrode, the copper billet is equipped with blue chip, conducting wire is connected between the blue chip and the electrode, the blue chip is wrapped with fluorescent glue, it is characterised in that：It is additionally provided with transparent spacer layer between the blue chip and fluorescent glue.The present invention provides a kind of LED light source module of leading portion light splitting, protects the blue chip before point fluorescent glue by transparent spacer layer, avoids it from suffering damage in light-dividing device, to which the purpose for making dispensing front light splitting is achieved.The present invention also provides the preparation methods of the LED light source module of leading portion light splitting, by being divided in advance to blue-ray LED before fluorescent glue, and configure fluorescent glue according to light splitting result, so that its photochromic, light intensity of prepared LED light source module is controlled, obtains the good LED product of no color differnece, stable quality, light efficiency.
Description
Technical field
The present invention relates to LED light source modules and preparation method thereof, more particularly to a kind of LED light source module of leading portion light splitting
And preparation method thereof.
Background technology
LED（Light-Emitting Diode）It is a kind of semiconductor that can convert electrical energy into luminous energy, it changes incandescent lamp tungsten filament
Shine the principle to shine with energy-saving lamp tricolor powder, and uses electroluminescence.The spectrum almost all of white light LEDs concentrates on can
Light-exposed frequency range compares white light LEDs and common incandescent lamp, spiral energy-saving lamp and three-color fluorescent lamp, the spy of LED
Point is clearly：The high and low radiation of long lifespan, light efficiency and low-power consumption, exactly because these advantages of LED so that white light LEDs
Illumination has had been enter into the high-speed developing period.Two methods of white light LEDs generally use are formed：First, using a variety of monochromatic light
Mixed method forms white light；Second is that cooperatively forming white light using blue chip and fluorescent powder.Currently, second method is mostly
YAG fluorescent powders are coated on blue chip（Ce rare earth phosphors）.Due to different wave length blue-light LED chip its can swash
The yellow light of different wave length is sent out, the two combines generated white light color not consistent.There is aberration to avoid LED product, one
As need after LED is encapsulated, to be divided by testing its wavelength, LED lamp bead similar in dominant wavelength is attributed to one kind, with
Ensure that the white light LEDs in single product are photochromic consistent.But the precision that this mode is divided is relatively low, and can not active control,
The photochromic of white light LEDs is adjusted, is caused unstable with a batch of LED product quality.Even if being attributed to similar white light LEDs its light
Color, light intensity are still easy that there are difference.
Invention content
It is a primary object of the present invention in view of the drawbacks of the prior art, provide a kind of same batch white light LEDs color of reduction
The LED light source module of difference.
The present invention solves the technological means that technical problem uses：A kind of LED light source module of leading portion light splitting, including branch
The top of frame, the holder is equipped with heat radiating cup, and the heat radiating cup bottom is equipped with copper billet and electrode, and the copper billet is equipped with blue light core
Piece, is connected with conducting wire between the blue chip and the electrode, the blue chip is wrapped with fluorescent glue, the blue light core
Transparent spacer layer is additionally provided between piece and fluorescent glue；The edge of the transparent isolation layer surface is equipped with the attachment around blue chip
Slot.
The light-dividing device of the prior art can generally survey packaged LED automatically by various mechanical action equipment
Try dominant wavelength, automatic classification.In this course, it is easy that LED product is caused to wear.The present invention especially blue chip with it is glimmering
Increase transparent spacer layer between optical cement, light can penetrate transparent spacer layer caused by blue chip, while transparent spacer layer can
To wrap up blue chip, avoid its by aoxidize, physical abrasion.In the presence of transparent spacer layer, the present invention can be real
After present blue chip key box, light-splitting processing is carried out immediately.Blue chip is not under the protection of transparent spacer layer, in light-splitting processing
It is easy to wear, it is finally able to be classified with wavelength.It, can be according to its applicable fluorescence of measurement numerical Design after being divided to blue chip
Glue, the excited white light of guarantee is photochromic, light intensity has higher consistency.To improve attachment of the fluorescent glue in transparent spacer layer
Intensity, the present invention are also especially equipped with the attachment slot around blue chip at the edge of transparent isolation layer surface, improve transparent isolation
The roughness of layer surface.Heat radiating cup, holder, copper billet etc. can be selected the prior art and realize.Transparent modeling can be selected in transparent spacer layer
Material injection molding is formed.
Further, be additionally provided with the Zener in parallel with the blue chip on the copper billet, the Zener with it is described
Conducting wire is equipped between electrode.
Zener is a zener diode, and size 7mil can play a protective role to blue chip.
Further, the choked flow slot around blue chip is additionally provided at the top of the copper billet；The bottom of the transparent spacer layer
In the embedded choked flow slot.
Transparent spacer layer can be selected transparent plastic and be molded to be formed, to keep the forming shape of transparent spacer layer, copper billet top
It is additionally provided with the choked flow slot around blue chip, avoids the rate of molten condition in injection moulding process wandering.
Its raw material of the transparent spacer layer includes 70 parts of makrolon, 0.1 part of ferric orthophosphate, sodium hydroxide 1 by weight
Part, 2 parts of antioxidant.In addition to this, optional makrolon is made.When preparing transparent spacer layer, it is heated into using above-mentioned raw materials
Hot melt adhesive, coated in being cooled transparent spacer layer on blue chip.Antioxidant can be selected the prior art and realize, such as antioxidant
168 etc..
The transparent spacer layer of the present invention adds ferric orthophosphate and suitable sodium hydroxide especially into makrolon, has excellent
Elegant heat dissipation performance.In addition, also helping the transparency for maintaining transparent spacer layer, it is avoided to turn to be yellow and light transmittance decline.
Present invention simultaneously provides a kind of LED light source module preparation methods of leading portion light splitting, include the following steps：
1) die bond：Zener is fixed on copper billet, baking 60 ± 5 minutes in 170~190 DEG C of baking oven are sent into；So
Blue chip is fixed on the copper billet again afterwards, is sent into baking 120 ± 5 minutes in 140~160 DEG C of baking oven；
2) it is bonded：With bonding equipment from extraction wire on the blue chip and the Zener, by the conducting wire and institute
Electrode soldering is stated, and ensures that the blue chip is in parallel with the Zener；In blue chip surface coating hot-melt adhesive, formed
The transparent spacer layer；
3) it is divided：It is powered to the electrode, tests T nanometers of the wavelength of blue chip；
4）Point fluorescent glue：Fluorescent glue, TMR-200647-380490 fluorescent powders are prepared by following component and parts by weight:Silicic acid
Salt O5742 fluorescent powders:Silicate, nitride BLT-2500-AB fluorescent powders:Silica gel 6551AB=X:Y:Z:100,
Middle X=[（590-T）× 0.3] 103 ÷, Y=2 ×（500-0.3T）~2 ×（410-0.5T）, Z=2~10
；The progress deaeration of prepared fluorescent glue is vacuumized, dissipating for the white light LEDs that the step 3) is completed uniformly is coated in dispenser
In hot cup, baking 60 ± 5 minutes in 140~160 DEG C of baking oven are then fed into, white light LEDs are obtained.
Compared with single YAG fluorescent powders, the combinations of three kinds of fluorescent powders have the characteristics that weight ratio allocate it is flexible,
So as to flexibly adjust the ratio of white light, the deficiency of white light is made up, the reproducibility of light is improved.Each group of fluorescent glue
Divide and commercial product realization can be selected.Creatively spectroscopic step is arranged before fluorescent glue by the present invention, is surveyed according to light splitting
Examination as a result, the fluorescent glue of design heterogeneity, allows obtained LED product to generate the white light for needing photochromic and light intensity,
Finally ensure same the batch even stability of different batches LED product quality.Present invention simultaneously provides the configuration of fluorescent glue originals
Then, under this this formula, its color of obtained white light LEDs is soft and close to sunlight, has higher light efficiency.
Preferably, also contain by the stabilizer for accounting for fluorescent glue gross weight 0.2%-1.5% in the fluorescent glue；Every 20 parts by weight are steady
Determine in agent, including 3 parts of hydrogen peroxide, 8 portions of mannitol, 4 parts of magnesium sulfate, 5 parts of ferroso-ferric oxides
Stabilizer can effectively improve the service life of white light LEDs, avoids long-term, high temperature practicality and white light LEDs is caused to be sent out
Change color, light decay.
The present invention provides a kind of LED light source module of leading portion light splitting, before transparent spacer layer protection point fluorescent glue
Blue chip avoids it from suffering damage in light-dividing device, to which the purpose for making dispensing front light splitting is achieved.The present invention also carries
For the preparation method of the LED light source module of leading portion light splitting, by being divided in advance to blue-ray LED before fluorescent glue, and foundation point
Light result configures fluorescent glue, its photochromic, light intensity of prepared LED light source module is allow to be controlled, and obtains no color differnece, quality
Stablize, the LED product that light efficiency is good.
Description of the drawings
Fig. 1 is the structural schematic diagram of the present invention.
Fig. 2 is the partial enlarged view of blue chip of the present invention.
Specific implementation mode
The embodiment of the present invention is described with above attached drawing, but the invention is not limited in above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form, all of these belong to the protection of the present invention.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the Listed Items of pass.
Embodiment 1
A kind of LED light source module of leading portion light splitting, including holder 1, the top of the holder 1 is equipped with heat radiating cup 2, described to dissipate
2 bottom of hot cup is equipped with copper billet 3 and electrode 4, and the copper billet 3 is equipped with blue chip 5, the blue chip 5 and the electrode 4 it
Between be connected with conducting wire 6, the blue chip 5 is wrapped with fluorescent glue 7, is additionally provided between the blue chip 5 and fluorescent glue 7 transparent
Separation layer 8；The edge on 8 surface of the transparent spacer layer is equipped with the attachment slot 9 around blue chip 5.
Further, be additionally provided with the Zener 10 in parallel with the blue chip 5 on the copper billet, the Zener 10 with
Conducting wire is equipped between the electrode 4.
Preferably, 3 top of the copper billet is additionally provided with the choked flow slot 11 around blue chip；The bottom of the transparent spacer layer
In the embedded choked flow slot 11.
Embodiment 2
The present embodiment provides a kind of methods for the LED light source module preparing the light splitting of 1 leading portion of embodiment.
Specifically include following steps：
Include the following steps：
1) die bond：Zener is fixed on copper billet, baking 60 ± 5 minutes in 190 DEG C of baking oven are sent into；Then again will
Blue chip is fixed on the copper billet, is sent into baking 120 ± 5 minutes in 140 DEG C of baking oven；
2) it is bonded：With bonding equipment from extraction wire on the blue chip and the Zener, by the conducting wire and institute
Electrode soldering is stated, and ensures that the blue chip is in parallel with the Zener；In blue chip surface coating hot-melt adhesive, formed
The transparent spacer layer；
3) it is divided：It is powered to the electrode, tests T nanometers of the wavelength of blue chip；
4）Point fluorescent glue：Fluorescent glue, nitride red fluorescent powder R6733 are prepared by following component and parts by weight（Ying Te
Electricity (Shenzhen) Co., Ltd of Micron Technology）:Just white fluorescent powder Y4651（Electricity (Shenzhen) Co., Ltd of Ying Te Micron Technologys）:Green
Fluorescent powder G3560（Electricity (Shenzhen) Co., Ltd of Ying Te Micron Technologys）:Silica gel 6551AB（6551 glue of DOW CORNING, A glue and B
The ratio of glue is 1:1）=X:Y:Z:100, wherein X=[（490-T）× 0.3] 103 ÷, Y=2 ×（410-0.3T）
~2 ×（410-0.5T）, Z=10；The progress deaeration of prepared fluorescent glue is vacuumized, is uniformly coated in dispenser
In the heat radiating cup for the white light LEDs that the step 3) is completed, it is then fed into 60 ± 5 points of baking in 140~160 DEG C of baking oven
Clock obtains white light LEDs.
In the present embodiment, its raw material of the transparent spacer layer includes 70 parts of makrolon, ferric orthophosphate 0.1 by weight
Part, 1 part of sodium hydroxide, 2 parts of antioxidant.
Further, also contain by the stabilizer for accounting for fluorescent glue gross weight 0.8% in the fluorescent glue；Every 20 parts by weight are stablized
In agent, including 3 parts of hydrogen peroxide, 8 portions of mannitol, 4 parts of magnesium sulfate, 5 parts of ferroso-ferric oxides.
Embodiment 3
The present embodiment provides a kind of methods for the LED light source module preparing the light splitting of 1 leading portion of embodiment.
Specifically include following steps：
1) die bond：Zener is fixed on copper billet, baking 60 ± 5 minutes in 185 DEG C of baking oven are sent into；Then again will
Blue chip is fixed on the copper billet, is sent into baking 120 ± 5 minutes in 150 DEG C of baking oven；
2) it is bonded：With bonding equipment from extraction wire on the blue chip and the Zener, by the conducting wire and institute
Electrode soldering is stated, and ensures that the blue chip is in parallel with the Zener；In blue chip surface coating hot-melt adhesive, formed
The transparent spacer layer；
3) it is divided：It is powered to the electrode, tests T nanometers of the wavelength of blue chip；
4）Point fluorescent glue：Fluorescent glue, TMR-200647-380490 fluorescent powders are prepared by following component and parts by weight:Silicic acid
Salt O5742 fluorescent powders:Silicate, nitride BLT-2500-AB fluorescent powders:Silica gel 6551AB=X:Y:Z:100,
Middle X=[（490-T）× 0.3] 103 ÷, Y=2 ×（410-0.3T）~2 ×（410-0.5T）, Z=15；It will match
The fluorescent glue made carries out deaeration and vacuumizes, and the heat radiating cup for the white light LEDs that the step 3) is completed uniformly is coated in dispenser
In, baking 60 ± 5 minutes in 155 DEG C of baking oven are then fed into, white light LEDs are obtained.
Its raw material of the transparent spacer layer includes 70 parts of makrolon, 0.1 part of ferric orthophosphate, sodium hydroxide 1 by weight
Part, 2 parts of antioxidant.
Further, also contain by the stabilizer for accounting for fluorescent glue gross weight 1.1% in the fluorescent glue；Every 20 parts by weight are stablized
In agent, including 3 parts of hydrogen peroxide, 8 portions of mannitol, 4 parts of magnesium sulfate, 5 parts of ferroso-ferric oxides.
Embodiment 4
The present embodiment provides a kind of methods for the LED light source module preparing the light splitting of 1 leading portion of embodiment.
Specifically include following steps：
1) die bond：Zener is fixed on copper billet, baking 60 ± 5 minutes in 170 DEG C of baking oven are sent into；Then again will
Blue chip is fixed on the copper billet, is sent into baking 120 ± 5 minutes in 160 DEG C of baking oven；
2) it is bonded：With bonding equipment from extraction wire on the blue chip and the Zener, by the conducting wire and institute
Electrode soldering is stated, and ensures that the blue chip is in parallel with the Zener；In blue chip surface coating hot-melt adhesive, formed
The transparent spacer layer；
3) it is divided：It is powered to the electrode, tests T nanometers of the wavelength of blue chip；
4）Point fluorescent glue：Fluorescent glue, TMR-200647-380490 fluorescent powders are prepared by following component and parts by weight:Silicic acid
Salt O5742 fluorescent powders:Silicate, nitride BLT-2500-AB fluorescent powders:Silica gel 6551AB=X:Y:Z:100,
Middle X=[（490-T）× 0.3] 103 ÷, Y=2 ×（410-0.3T）~2 ×（410-0.5T）, Z=2；It will match
The fluorescent glue made carries out deaeration and vacuumizes, and the heat radiating cup for the white light LEDs that the step 3) is completed uniformly is coated in dispenser
In, baking 60 ± 5 minutes in 160 DEG C of baking oven are then fed into, white light LEDs are obtained.
Its raw material of the transparent spacer layer is makrolon.
Further, also contain by the stabilizer for accounting for fluorescent glue gross weight 0.2% in the fluorescent glue；Every 20 parts by weight are stablized
In agent, including 3 parts of hydrogen peroxide, 8 portions of mannitol, 4 parts of magnesium sulfate, 5 parts of ferroso-ferric oxides.
Embodiment 5
The present embodiment provides a kind of methods for the LED light source module preparing the light splitting of 1 leading portion of embodiment.
Specifically include following steps：
Include the following steps：
1) die bond：Zener is fixed on copper billet, baking 60 ± 5 minutes in 174 DEG C of baking oven are sent into；Then again will
Blue chip is fixed on the copper billet, is sent into baking 120 ± 5 minutes in 145 DEG C of baking oven；
2) it is bonded：With bonding equipment from extraction wire on the blue chip and the Zener, by the conducting wire and institute
Electrode soldering is stated, and ensures that the blue chip is in parallel with the Zener；In blue chip surface coating hot-melt adhesive, formed
The transparent spacer layer；
3) it is divided：It is powered to the electrode, tests T nanometers of the wavelength of blue chip；
4）Point fluorescent glue：Fluorescent glue, TMR-200647-380490 fluorescent powders are prepared by following component and parts by weight:Silicic acid
Salt O5742 fluorescent powders:Silicate, nitride BLT-2500-AB fluorescent powders:Silica gel 6551AB=X:Y:Z:100,
Middle X=[（490-T）× 0.3] 103 ÷, Y=2 ×（410-0.3T）~2 ×（410-0.5T）, Z=8；It will prepare
Good fluorescent glue carries out deaeration and vacuumizes, and is uniformly coated in dispenser in the heat radiating cup for the white light LEDs that the step 3) is completed,
Baking 60 ± 5 minutes in 140~160 DEG C of baking oven are then fed into, white light LEDs are obtained.
Further, also contain by the stabilizer for accounting for fluorescent glue gross weight 1.5% in the fluorescent glue；Every 20 parts by weight are stablized
In agent, including 3 parts of hydrogen peroxide, 8 portions of mannitol, 4 parts of magnesium sulfate, 5 parts of ferroso-ferric oxides.
Comparative example 1
This comparative example provides a kind of white LED light source module, uses that application No. is 201210290360.0 Chinese patents
It is made.
Comparative example 2
This comparative example provides a kind of LED light source module, and structure is consistent with embodiment 1.
Preparation method includes the following steps：
1) die bond：Zener is fixed on copper billet, baking 60 ± 5 minutes in 185 DEG C of baking oven are sent into；Then again will
Blue chip is fixed on the copper billet, is sent into baking 120 ± 5 minutes in 150 DEG C of baking oven；
2) it is bonded：With bonding equipment from extraction wire on the blue chip and the Zener, by the conducting wire and institute
Electrode soldering is stated, and ensures that the blue chip is in parallel with the Zener；In blue chip surface coating hot-melt adhesive, formed
The transparent spacer layer；
3) it is divided：It is powered to the electrode, tests T nanometers of the wavelength of blue chip；
4）Point fluorescent glue：Fluorescent glue, TMR-200647-380490 fluorescent powders are prepared by following component and parts by weight:Silicic acid
Salt O5742 fluorescent powders:Silicate, nitride BLT-2500-AB fluorescent powders:Silica gel 6551AB=X:Y:Z:100,
Middle X=[（490-T）× 0.3] 103 ÷, Y=2 ×（410-0.3T）~2 ×（410-0.5T）, Z=15；It will match
The fluorescent glue made carries out deaeration and vacuumizes, and the heat radiating cup for the white light LEDs that the step 3) is completed uniformly is coated in dispenser
In, baking 60 ± 5 minutes in 155 DEG C of baking oven are then fed into, white light LEDs are obtained.
Its raw material of the transparent spacer layer includes 70 parts of makrolon, 0.1 part of ferric orthophosphate, 2 parts of antioxidant by weight.
Comparative example 3
This comparative example provides a kind of LED light source module, and structure is consistent with embodiment 1.
Preparation method includes the following steps：
1) die bond：Zener is fixed on copper billet, baking 60 ± 5 minutes in 185 DEG C of baking oven are sent into；Then again will
Blue chip is fixed on the copper billet, is sent into baking 120 ± 5 minutes in 150 DEG C of baking oven；
2) it is bonded：With bonding equipment from extraction wire on the blue chip and the Zener, by the conducting wire and institute
Electrode soldering is stated, and ensures that the blue chip is in parallel with the Zener；
3) it is divided：It is powered to the electrode, tests T nanometers of the wavelength of blue chip；
4）Point fluorescent glue：Fluorescent glue, nitride red fluorescent powder R6733 are prepared by following component and parts by weight:It is just white
Fluorescent powder Y4651:Green emitting phosphor G3560:Silica gel 6551AB=5:85:5:1000；By prepared fluorescent glue into
Row deaeration vacuumizes, and is uniformly coated in dispenser in the heat radiating cup for the white light LEDs that the step 3) is completed, is then fed into 155
DEG C baking oven in baking 60 ± 5 minutes, obtain white light LEDs.
In above-described embodiment and comparative example, the wavelength of blue chip is between 400-480nm.
100 products are respectively prepared using the method for embodiment 2-5, comparative example 1-3 and carry out test colour temperature, and calculate its colour temperature
Variance D.The results are shown in Table 1 for it.
| Experimental group | Colour temperature variance | Appearance |
| Embodiment 2 | 0.005 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Embodiment 3 | 0.004 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Embodiment 4 | 0.006 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Embodiment 5 | 0.005 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Comparative example 1 | 1.33 | Each group LED light source module aberration is apparent, and light intensity is uneven. |
| Comparative example 2 | 0.006 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Comparative example 3 | 1.45 | Each group LED light source module aberration is apparent, and light intensity is uneven. |
Stability test
Burn-in test is carried out 5000 hours to each set product using xenon lamp aging case, tests the variance of colour temperature, result is such as
Shown in table 2.
| Experimental group | Colour temperature variance | Appearance |
| Embodiment 2 | 0.008 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Embodiment 3 | 0.009 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Embodiment 4 | 0.007 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Embodiment 5 | 0.010 | Each group LED light source module is photochromic consistent, soft, close to daylight. |
| Comparative example 1 | 3.21 | Light efficiency caused by LED light source module carries apparent yellow, while each set product equation of light is apparent. |
| Comparative example 2 | 1.26 | Light efficiency caused by LED light source module carries apparent yellow, while each set product equation of light is apparent. |
| Comparative example 3 | 3.67 | Light efficiency caused by LED light source module carries apparent yellow, while each set product equation of light is apparent. |
Burn-in test is carried out 5000 hours to each set product using xenon lamp aging case, tests the variance of colour temperature, result is such as
Shown in table 2.
Transparent spacer layer transparency is tested.
Transparent spacer layer is peeled off, xenon lamp aging case is placed in and burn-in test is carried out 5000 hours to each set product, test it
Light transmittance.2410-2008 standard testings of GB/T can be used in light transmittance.As a result such as table 3.
| Experimental group | Light transmittance（%） | Light transmittance after ageing oven processing（%） |
| Embodiment 2 | 99.33 | 97.39 |
| Embodiment 3 | 99.52 | 97.01 |
| Embodiment 4 | 99.34 | 89.25 |
| Comparative example 2 | 99.01 | 88.13 |
Transparent spacer layer heat dissipation performance is tested.
Thermal coefficient, result such as table 4 are tested using GB/T3139-2005.
| Experimental group | Thermal coefficient（W/m·k） |
| Embodiment 2 | 3.83 |
| Embodiment 3 | 3.07 |
| Embodiment 4 | 0.91 |
| Comparative example 2 | 1.22 |
It these are only the preferred embodiment of the present invention, be not intended to limit the scope of the invention, it is every to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (6)
1. a kind of LED light source module groups of leading portion light splitting, including holder（1）, the holder（1）Top be equipped with heat radiating cup（2）,
The heat radiating cup（2）Bottom is equipped with copper billet（3）And electrode（4）, the copper billet（3）It is equipped with blue chip（5）, the blue light core
Piece（5）With the electrode（4）Between be connected with conducting wire（6）, the blue chip（5）It is wrapped with fluorescent glue（7）, feature exists
In：The blue chip（5）Transparent spacer layer is additionally provided between fluorescent glue（8）；The edge of the transparent isolation layer surface is equipped with
Around the attachment slot of blue chip（9）, wherein leading portion light splitting is in transparent spacer layer（8）In the presence of, it is bonded blue light
Chip（5）Afterwards, light-splitting processing is carried out immediately.
2. according to the LED light source module groups of the leading portion light splitting described in claim 1, it is characterised in that：The copper billet（3）It is upper to go back
Equipped with the Zener in parallel with the blue chip（10）, the Zener（1）With the electrode（4）Between be equipped with conducting wire.
3. the LED light source module groups being divided according to claim 1 or 2 any one of them leading portions, it is characterised in that：It is described
Copper billet（3）Top is additionally provided with around blue chip（5）Choked flow slot（11）；The bottom of the transparent spacer layer is embedded in the choked flow
Slot（11）In.
4. according to the LED light source module groups of the leading portion light splitting described in claim 1, it is characterised in that：The transparent spacer layer
Its raw material includes 70 parts of makrolon, 0.1 part of ferric orthophosphate, 1 part of sodium hydroxide, 2 parts of antioxidant by weight.
5. a kind of LED light source module group preparation methods of leading portion light splitting as described in claim 1, include the following steps：
1) die bond：Zener is fixed on copper billet, baking 60 ± 5 minutes in 170~190 DEG C of baking oven are sent into；So
Blue chip is fixed on the copper billet again afterwards, is sent into baking 120 ± 5 minutes in 140~160 DEG C of baking oven；
2) it is bonded：With bonding equipment from extraction wire on the blue chip and the Zener, by the conducting wire and the electrode
Soldering, and ensure that the blue chip is in parallel with the Zener；In blue chip surface coating hot-melt adhesive, formed described transparent
Separation layer；
3) it is divided：It is powered to the electrode, tests T nanometers of the wavelength of blue chip；
4）Point fluorescent glue：Fluorescent glue, TMR-200647-380490 fluorescent powders are prepared by following component and parts by weight:Silicate
O5742 fluorescent powders:Silicate, nitride BLT-2500-AB fluorescent powders:Silica gel 6551AB=X:Y:Z:100,
Middle X=[（590-T）× 0.3] 103 ÷, Y=2 ×（500-0.3T）~2 ×（410-0.5T）, Z=2~10
；The progress deaeration of prepared fluorescent glue is vacuumized, the white light LEDs that the step 3) is completed uniformly are coated in dispenser
Heat radiating cup in, be then fed into baking 60 ± 5 minutes in 140~160 DEG C of baking oven, obtain white light LEDs.
6. according to the method described in claim 5, it is characterised in that：Also contain by accounting for fluorescent glue gross weight in the fluorescent glue
The stabilizer of 0.2%-1.5%；In every 20 parts by weight stabilizer, including 3 parts of hydrogen peroxide, 8 portions of mannitol, 4 parts of sulfuric acid
Magnesium, 5 parts of ferroso-ferric oxides.
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| CN202695552U (en) * | 2012-06-21 | 2013-01-23 | 广州市雷腾照明科技有限公司 | Packaging structure with good anti-glare and cooling performances for high-power light-emitting diode (LED) lamp |
| CN103000780B (en) * | 2012-12-14 | 2015-08-05 | 京东方科技集团股份有限公司 | A kind of LED chip encapsulating structure and manufacture method, display unit |
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| CN101097977A (en) * | 2007-03-26 | 2008-01-02 | 鹤山丽得电子实业有限公司 | Method for producing white light LED lamp and LED lamp using the same |
| CN101393950A (en) * | 2007-09-17 | 2009-03-25 | 兆立光电有限公司 | Flip encapsulation manufacturing method for LED |
| CN101677120A (en) * | 2008-09-16 | 2010-03-24 | 长裕欣业股份有限公司 | Method of producing light emitting diode |
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