CN105304446A - Lower electrode base platform of dry etching device and dry etching device - Google Patents
Lower electrode base platform of dry etching device and dry etching device Download PDFInfo
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- CN105304446A CN105304446A CN201510600235.9A CN201510600235A CN105304446A CN 105304446 A CN105304446 A CN 105304446A CN 201510600235 A CN201510600235 A CN 201510600235A CN 105304446 A CN105304446 A CN 105304446A
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- 238000001312 dry etching Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000003028 elevating effect Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 238000004380 ashing Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005192 partition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
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Abstract
The invention provides a lower electrode base platform of a dry etching device and the dry etching device. The lower electrode base platform comprises a base platform substrate, a plurality of support structures arranged on the base platform substrate, and a switching mechanism. The plurality of support structures are composed of a first support part and a second support part. In a first state, the support surface of the first support part is higher than the support surface of the second support part, and the support surface of the second support part is laminated below the support surface of the first support part. In a second state, the support surface of the second support part is higher than the support surface of the first support part, and the support surface of the first support part is laminated below the support surface of the second support part. The switching mechanism is used for controlling the switching of the first support part and the second support part between the first state and the second state. By means of the lower electrode base platform of the dry etching device, the poor impression phenomenon caused by the deposition of foreign matters on the support surfaces can be relieved. Meanwhile, the damage to substrate base plates is avoided.
Description
Technical Field
The invention relates to the technical field of etching, in particular to a lower electrode base station of dry etching equipment and the dry etching equipment.
Background
In the field of display technology, a substrate is usually etched by a dry etching process to form a corresponding pattern (pattern). Specifically, a substrate to be etched is placed in dry etching equipment, and the material to be etched on the substrate is removed by plasma discharge for etching.
The dry etching equipment in the prior art mainly comprises: the device comprises a reaction cavity, an upper electrode and a lower electrode which are positioned in the reaction cavity, and a base platform which is positioned on the lower electrode and used for placing a substrate; when the method is specifically implemented, a substrate base plate to be etched is placed on a base platform above a lower electrode, plasma gas is introduced into a reaction cavity, the reaction cavity is sealed, voltage is applied to an upper electrode and the lower electrode, and a potential difference is formed between the upper electrode and the lower electrode, so that the plasma is driven to move towards the substrate base plate, and the substrate base plate is etched.
Fig. 1 is a schematic structural diagram of a lower electrode base of a prior art dry etching apparatus. As shown in fig. 1, a submount over a lower electrode includes a submount substrate 10, and a surface floating point (EmbossingDot)20 and a support PIN (PIN)30 on the surface of the submount substrate 10, and the surface floating point 20 is made of alumina ceramic. As the using time of the lower electrode increases, more and more byproducts deposit on the surface floating point 20, and due to the temperature difference at the surface floating point 20 at different positions, and due to the temperature difference, the etching rate difference exists, the etching effect difference exists, and thus the occurrence of imprint failure (EmbossingMura) is caused.
In order to solve the above problems, a solution is adopted to reduce the contact area between the stamp dot and the substrate as much as possible, for example, the head of the stamp dot for contacting the substrate is made into a zigzag shape or a strand shape, but although the stamp failure can be improved, the hardness of the alumina ceramic is higher than that of glass, and when the substrate to be etched is placed on a surface floating point with higher hardness, the contact area between the surface floating point and the substrate is too small, so that the pressure applied to the substrate is too large, and the substrate is damaged (glassbreaking).
Disclosure of Invention
The invention aims to provide a lower electrode base station of dry etching equipment and the dry etching equipment, which can effectively improve poor imprinting and can not cause damage to a substrate.
The technical scheme provided by the invention is as follows:
a lower electrode stage of a dry etching apparatus, comprising:
a base substrate;
a plurality of support structures on the submount substrate, the support structures comprising a first support portion and a second support portion having a first state and a second state therebetween, wherein,
in the first state, the support surface of the first support portion is higher than the support surface of the second support portion, and the support surface of the second support portion is stacked below the support surface of the first support portion; in the second state, the support surface of the second support portion is higher than the support surface of the first support portion, and the support surface of the first support portion is stacked below the support surface of the second support portion;
and a switching mechanism for controlling the first and second support portions to be switched between the first and second states, the first and second support portions being connected to the switching mechanism.
Further, the first support portion includes: a first support bar provided on the base plate of the base; the first supporting plate is connected to the top end of the first supporting rod, at least part of the first supporting plate extends towards the direction of the second supporting part and is arranged in parallel with the base plate of the base table, and a first accommodating space which is opened towards the direction of the second supporting part is formed between the first supporting rod and the first supporting plate;
the second support portion includes: a second support bar disposed on the base substrate; the second supporting plate is connected to the top end of the second supporting rod, at least part of the second supporting plate extends towards the first supporting part in the direction and is arranged in parallel with the base plate of the base platform, and a second accommodating space which is opened towards the first supporting part in the direction is formed between the second supporting rod and the second supporting plate;
in the first state, the second support part is accommodated in the first accommodating space, so that the second support plate is stacked below the first support plate;
in the second state, the first supporting part is accommodated in the second accommodating space, so that the first supporting plate is stacked below the second supporting plate.
Further, the switching mechanism includes:
a first translation structure connected to the first support bar and/or the second support bar; the first lifting structure is connected with the first supporting rod and/or the second supporting rod;
wherein, when controlling the first and second support portions to switch between the first and second states, the first translation structure is capable of translating the first and/or second support portions in a direction parallel to the base substrate on the base substrate, and the first elevation structure is capable of raising and lowering the first and/or second support portions in a direction perpendicular to the base substrate.
Furthermore, an L-shaped structure is formed between the first supporting rod and the first supporting plate; and an L-shaped structure is formed between the second supporting rod and the second supporting plate.
Further, the first support part comprises a first support column arranged on the first support base, the top end of the first support column forms a support surface of the first support part, and the first support column is hollow;
the second support part comprises a second support column, and the top end of the second support column forms a support surface of the second support part; wherein,
the second supporting columns are all arranged inside the first supporting columns, the area of the supporting surface at the top ends of the first supporting columns is larger than that of the supporting surface at the top ends of the second supporting columns, and through holes for the second supporting columns to pass through are formed in the middle of the supporting surface at the top ends of the first supporting columns;
in the first state, the second support column is contracted inside the first support column through the through hole at the top end of the first support column, so that the support surface of the second support column is stacked below the support surface of the first support column;
in the second state, the second supporting column penetrates out of the first supporting column through the through hole in the top end of the first supporting column, so that the supporting surface of the first supporting column is stacked below the supporting surface of the second supporting column.
Furthermore, a partition plate is arranged at the position of the through hole in the supporting surface at the top end of the first supporting column, and the partition plate can move at the position of the through hole to open or close the through hole.
Further, the switching mechanism includes: a second elevation structure connected to the first support portion and/or the second support portion, wherein the second elevation structure is capable of elevating the first support column and/or the second support column in a direction perpendicular to the base substrate when the first support portion and the second support portion are controlled to switch between the first state and the second state.
Furthermore, the first supporting part and the second supporting part are both of surface floating point structures, and supporting surfaces of the first supporting part and the second supporting part are both made of ceramic materials.
Further, the base substrate is a ceramic substrate.
A dry etching apparatus comprising a lower electrode station as described above.
The invention has the following beneficial effects:
according to the lower electrode base station of the dry etching equipment, the surface floating point (Embossingdot) on the surface of the substrate is improved and designed to be capable of being mutually stacked to alternately support the two supporting parts of the substrate base plate, so that the substrate base plate is supported by the first supporting part when the first etching process is carried out, and foreign matter is not deposited on the supporting surface of the second supporting part because the supporting surface of the second supporting part is stacked below the supporting surface of the first supporting part, so that the imprinting failure caused by the deposition of the foreign matter on the supporting surface can be reduced when the substrate base plate is supported by the second supporting part when the second etching process is carried out; in addition, the contact area between each supporting part and the substrate is not reduced, and the problem of damage to the substrate is avoided.
Drawings
FIG. 1 is a schematic structural diagram of a lower electrode stage of a prior art dry etching apparatus;
FIG. 2 is a plan view of a lower electrode stage of the dry etching apparatus provided in the embodiment of the present invention;
fig. 3 is a schematic structural view of a support structure of a lower electrode stage provided in embodiment 1 of the present invention in a first state;
fig. 4 is a schematic structural view of a support structure of a lower electrode stage provided in embodiment 1 of the present invention in a second state;
fig. 5 is a schematic structural view of a support structure of a lower electrode stage provided in embodiment 2 of the present invention in a first state;
fig. 6 is a schematic structural view of the support structure of the lower electrode stage provided in embodiment 2 of the present invention in the second state.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
The invention provides a lower electrode base platform of dry etching equipment, aiming at the problems that foreign matters can be deposited on an upper surface floating point of the lower electrode base platform of the dry etching equipment in the prior art to cause bad impression in the etching process, and the contact area between the surface floating point and a substrate base plate can cause substrate base plate damage.
The lower electrode base station of the dry etching equipment provided by the invention is a base station which is positioned on the lower electrode and used for supporting a substrate base plate to be etched. The base and the lower electrode are stacked and combined in a manner similar to the prior art, and the present invention will be described in detail below with reference to the base.
As shown in fig. 2 to 6, the lower electrode base of the dry etching apparatus provided by the present invention includes:
a base substrate 200;
a plurality of support structures 100 on the base substrate 200, the support structures 100 including a first support portion 101 and a second support portion 102, the first support portion 101 and the second support portion 102 having a first state and a second state therebetween, wherein in the first state, a support surface of the first support portion 101 is higher than a support surface of the second support portion 102 and a support surface of the second support portion 102 is stacked below the support surface of the first support portion 101, and in the second state, a support surface of the second support portion 102 is higher than the support surface of the first support portion 101 and a support surface of the first support portion 101 is stacked below the support surface of the second support portion 102;
and a switching mechanism for controlling the first and second support portions 101 and 102 to be switched between the first and second states, the first and second support portions 101 and 102 being connected to the switching mechanism.
In the lower electrode base station of the dry etching equipment provided by the invention, the support structure 100 arranged on the base station substrate 200 is designed to be capable of being mutually laminated to alternately support two support parts of the substrate base plate, so that the substrate base plate is supported by the first support part 101 when the first etching process is carried out, and no foreign matter is deposited on the support surface of the second support part 102 because the support surface is laminated below the support surface of the first support part 101, therefore, when the second etching process is carried out, the imprinting failure caused by the deposition of the foreign matter on the support surface can be reduced when the substrate base plate is supported by the second support part 102; in addition, the contact area between each supporting part and the substrate is not reduced, and the problem of damage to the substrate is avoided.
The substrate provided in the embodiment of the present invention may be a glass substrate or a flexible substrate. For example: the substrate base may be a substrate base of a TFT array base. In the examples of the present invention, a glass substrate is used as an example for explanation.
In the lower electrode base station provided in the embodiment of the present invention, preferably, the first supporting portion 101 and the second supporting portion 102 are both in a surface floating point structure (i.e., an EmbossingDot), the supporting surfaces of the first supporting portion 101 and the second supporting portion 102 are both made of a ceramic material, the base station substrate 200 is a ceramic substrate, and at least an upper surface of the base station substrate is made of a ceramic material. It is understood that the specific material of the supporting structure 100 and the specific material of the base substrate 200 are not limited thereto.
Several preferred embodiments of the lower electrode stage of the dry etching apparatus provided by the present invention are described below.
Example 1
Fig. 3 and 4 are schematic structural diagrams illustrating a first embodiment of a support structure 100 on a lower electrode base platform of a dry etching apparatus provided by the invention.
In this embodiment, as shown in fig. 3 and 4, the first supporting portion 101 includes a first supporting rod 1011 disposed on the base plate 200 and a first supporting plate 1012 connected to a top end of the first supporting rod 1011, at least a portion of the first supporting plate 1012 extends toward the second supporting portion 102 and is disposed substantially parallel to the base plate 200, so that a first accommodating space opened toward the second supporting portion 102 is formed between the first supporting rod 1011 and the first supporting plate 1012, and a supporting surface of the first supporting portion 101 is formed by an upper surface of the first supporting plate 1012;
the second supporting portion 102 includes a second supporting rod 1021 arranged on the base substrate 200 and a second supporting plate 1022 connected to a top end of the second supporting rod 1021, at least a portion of the second supporting plate 1022 extends toward the first supporting portion 101 and is arranged parallel to the base substrate 200, so that a second accommodating space opened toward the first supporting portion 101 is formed between the second supporting rod 1021 and the second supporting plate 1022, and a supporting surface of the second supporting portion 102 is formed by an upper surface of the second supporting plate 1022;
wherein in the first state, the second support part 102 is receivable in the first receiving space such that the first support plate 1012 supports a substrate, and the second support plate 1022 is stacked under the first support plate 1012, being covered by the first support plate 1012; in the second state, the first support portion 101 is received in the second receiving space so that the first support plate 1012 supports the substrate base plate, and the first support plate 1012 is stacked under the second support plate 1022 and covered by the first support plate 1012.
In this embodiment, as shown in fig. 3 and 4, it is preferable that an L-shaped structure is formed between the first support plate 1012 and the first support rod 1011, an L-shaped structure is formed between the second support plate 1022 and the second support rod 1021, and the L-shaped structure formed by the first support plate 1012 and the first support rod 1011 and the L-shaped structure formed by the second support plate 1022 and the second support rod 1021 are disposed opposite to each other.
It should be understood that in other embodiments of the present invention, the structures of the first support plate 1012 and the first support rod 1011 may not be limited thereto, for example: other structures can be used between the first support plate 1012 and the first support rod 1011 and between the second support rod 1021, and only a first accommodating space needs to be formed between the first support plate 1012 and the first support rod 1011, and a second accommodating space needs to be formed between the second support rod 1021 and the second support plate 1022, so that the first support plate 1012 and the second support plate 1022 can be completely stacked.
In this embodiment, preferably, the switching mechanism includes:
a first translation structure connected to the first support rod 1011 and/or the second support rod 1021; and a first lifting structure connected to the first support rod 1011 and/or the second support rod 1021;
when controlling the first and second support portions 101 and 102 to switch between the first and second states, the first translation mechanism may translate the first and/or second support portions 101 and/or 102 in a direction parallel to the base substrate 200 on the base substrate 200, and the first elevation mechanism may elevate the first and/or second support portions 101 and 102 in a direction perpendicular to the base substrate 200.
In the above solution, the first support plate 1012 and the second support plate 1022 are stacked, and the positions can be switched under the control of the first translation structure and the first lifting mechanism of the switching mechanism, so as to alternately support the substrate in different etching processes, and the structure is simple and easy to operate.
Specifically, as shown in fig. 3, when the supporting surface of the first supporting portion 101 is required to be higher than the supporting surface of the second supporting portion 102, the first translating structure is first utilized to translate the first supporting portion 101 from the second accommodating space to the outside of the second accommodating space, then the first lifting mechanism is utilized to control the first supporting portion 101 to ascend or control the second supporting portion 102 to descend, and then the first translating mechanism is utilized to translate the first supporting portion 101 or the second supporting portion 102, so that the first supporting plate 1012 is stacked above the second supporting plate 1022;
as shown in fig. 4, when the supporting surface of the second supporting portion 102 needs to be higher than the supporting surface of the first supporting portion 101, the first translating structure is used to translate the second supporting portion 102 from the first accommodating space to the outside of the first accommodating space, then the first lifting mechanism is used to control the first supporting portion 101 to descend or control the second supporting portion 102 to ascend, and then the first translating mechanism is used to translate the second supporting portion 102 or the first supporting portion 101, so that the second supporting plate 1022 is stacked above the first supporting plate 1012.
It is understood that the above only provides a preferred implementation of the switching mechanism, and in practical applications, the specific implementation of the switching mechanism is not limited thereto, and is not listed here.
The operation of the lower electrode base provided in this embodiment will be described in detail below by taking an SD dry etching (DryEtch) process as an example in a TFT (thin film transistor) substrate manufacturing process. The SD dry etching process for the TFT substrate mainly comprises Active layer (Active) etching and Photoresist (PR) Ashing (Ashing).
When the SD dry etching is performed on the lower electrode base station of the dry etching apparatus provided in this embodiment, and the active layer etching is performed, the switching mechanism controls the first support plate 1012 to be stacked above the second support plate 1022, the first support plate 1012 is used to support the substrate base plate, and the second support plate 1022 is accommodated in the first accommodating space formed by the first support plate 1012 and the first support rod 1011 and is covered and isolated;
after the active layer etching is completed, controlling the second support plate 1022 to translate out of the position below the first support plate 1012 through the switching mechanism, then lowering the first support plate 1012 or raising the second support plate 1022, and finally controlling the first support plate 1012 and the second support plate 1022 to translate relatively, so that the first support plate 1012 is laminated below the second support plate 1022, and thus a substrate is supported by the second support plate 1022 when photoresist ashing is performed;
after the photoresist ashing is completed, the second support plate 1022 is controlled to descend or the first support plate 1012 is controlled to ascend through the switching mechanism again, so that the second support plate 1022 is stacked below the first support plate 1012, and then the Pin (support rod) of the base table is lifted, so that the foreign matter is deposited on the first support plate 1012, the second support plate 1022 is not affected, and the effect of reducing the occurrence of imprint failure (EmbossingMura) is achieved.
Example 2
Fig. 5 to 6 are schematic structural diagrams illustrating a second embodiment of a support structure 100 on a lower electrode base platform of a dry etching apparatus provided by the present invention.
In the present embodiment, as shown in fig. 5 and 6, the first support portion 101 includes a first support base 1013 provided on the base plate 200 of the abutment, and a first support column 1014 provided on the first support base 1013, a top end of the first support column 1014 forms a support surface of the first support portion 101, and the first support base 1013 and the first support column 1014 are hollow inside; the second support portion 102 comprises a second support base and second support pillars disposed on the second support base, top ends of the second support pillars forming a support surface of the second support portion 102;
the second support base and the second support column are disposed inside the first support base 1013 and the first support column 1014, the area of the support surface at the top end of the first support column 1014 is larger than that of the support surface at the top end of the second support column, and a through hole for the second support column to pass through is formed in the middle of the support surface at the top end of the first support column 1014;
as shown in fig. 5, in the first state, the second support column is retracted inside the first support column 1014 from the through hole at the top end of the first support column 1014, so that the support surface of the second support column is stacked below the support surface of the first support column 1014; as shown in fig. 6, in the second state, the second support column passes through the through hole at the top end of the first support column 1014 and out of the first support column 1014, so that the support surface of the first support column 1014 is stacked below the support surface of the second support column.
In this embodiment, it is preferable that a through hole position on the support surface of the top end of the first support column 1014 is provided with a partition plate which can move at the through hole position to open or close the through hole.
Specifically, in the first state, the partition plate closes the through hole, so that the support surface of the top end of the first support column 1014 is in a flat state to support the substrate base plate; in the second state, the partition plate opens the through hole so that the second support post protrudes out of the first support post 1014 to support a substrate base plate. Therefore, the arrangement of the isolation plate can ensure that the supporting surface of the first supporting column 1014 is a plane when contacting with the substrate base plate, thereby avoiding the generation of defects caused by the uneven supporting surface.
In this embodiment, preferably, the switching mechanism includes: a second lifting structure connected to the first support portion 101 and/or the second support portion 102, wherein the second lifting structure is capable of lifting and lowering the first support column 1014 and/or the second support column in a direction perpendicular to the base plate 200 when the first support portion 101 and the second support portion 102 are controlled to switch between the first state and the second state.
Specifically, when the supporting surface of the first supporting portion 101 is required to be higher than the supporting surface of the second supporting portion 102, the first supporting column 1014 is lifted up or the second supporting column is lowered down by using the second lifting structure, so that the supporting surface of the first supporting column 1014 is stacked above the supporting surface of the second supporting column;
when the supporting surface of the second supporting portion 102 is required to be higher than the supporting surface of the first supporting portion 101, the first supporting column 1014 is lowered or the second supporting column is raised by using the second lifting structure, so that the supporting surface of the second supporting column is stacked above the supporting surface of the first supporting column 1014.
It is understood that the above only provides a preferred implementation manner of the switching mechanism in this embodiment, and in practical applications, there may be multiple specific implementation manners of the switching mechanism, for example, the second supporting column may also be a telescopic rod structure, and the switching structure is used to control the second supporting column to extend and retract; the specific implementation of the switching mechanism is not listed here.
The operation of the lower electrode base provided in this embodiment will be described in detail below by taking an SD dry etching (DryEtch) process as an example in a TFT (thin film transistor) substrate manufacturing process.
When the lower electrode base station of the dry etching apparatus provided in this embodiment performs SD dry etching, first, active layer etching is performed, and the switching mechanism controls the second supporting column to shrink into the first supporting column 1014, so that the top supporting surface of the second supporting column is stacked below the top supporting surface of the first supporting column 1014, the top supporting surface of the first supporting column 1014 supports the substrate base plate, and the second supporting column is completely isolated inside the first supporting column 1014 and the first supporting base 1013;
after the active layer etching is completed, the second support columns are controlled by the switching mechanism to extend out of the first support columns 1014, so that the top supporting surfaces of the first support columns 1014 are lower than the top supporting surfaces of the second support columns, and a substrate base plate is supported by the second support columns when photoresist ashing is carried out;
after the photoresist ashing is completed, the second support column is controlled to descend or the first support column 1014 is controlled to ascend through the switching mechanism again, so that the second support column is contracted inside the first support column 1014, and then a Pin (support rod) on the base station is controlled to ascend and descend, so that the sediment of foreign matters is attached to the top end support surface of the first support column 1014, and the top end support surface of the second support column is not affected, and the effect of reducing the generation of imprinting failure (EmbossingMura) is achieved.
The embodiment of the invention also provides dry etching equipment which comprises the lower electrode base station.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A lower electrode base station of a dry etching device, comprising:
a base substrate;
a plurality of support structures on the submount substrate, the support structures comprising a first support portion and a second support portion having a first state and a second state therebetween, wherein,
in the first state, the support surface of the first support portion is higher than the support surface of the second support portion, and the support surface of the second support portion is stacked below the support surface of the first support portion; in the second state, the support surface of the second support portion is higher than the support surface of the first support portion, and the support surface of the first support portion is stacked below the support surface of the second support portion;
and a switching mechanism for controlling the first and second support portions to be switched between the first and second states, the first and second support portions being connected to the switching mechanism.
2. The lower electrode stage of claim 1,
the first support portion includes: a first support bar provided on the base plate of the base; the first supporting plate is connected to the top end of the first supporting rod, at least part of the first supporting plate extends towards the direction of the second supporting part and is arranged in parallel with the base plate of the base table, and a first accommodating space which is opened towards the direction of the second supporting part is formed between the first supporting rod and the first supporting plate;
the second support portion includes: a second support bar disposed on the base substrate; the second supporting plate is connected to the top end of the second supporting rod, at least part of the second supporting plate extends towards the first supporting part in the direction and is arranged in parallel with the base plate of the base platform, and a second accommodating space which is opened towards the first supporting part in the direction is formed between the second supporting rod and the second supporting plate;
wherein,
in the first state, the second support part is accommodated in the first accommodating space, so that the second support plate is stacked below the first support plate;
in the second state, the first supporting part is accommodated in the second accommodating space, so that the first supporting plate is stacked below the second supporting plate.
3. The lower electrode stage of claim 2,
the switching mechanism includes:
a first translation structure connected to the first support bar and/or the second support bar; the first lifting structure is connected with the first supporting rod and/or the second supporting rod;
wherein, when controlling the first and second support portions to switch between the first and second states, the first translation structure is capable of translating the first and/or second support portions in a direction parallel to the base substrate on the base substrate, and the first elevation structure is capable of raising and lowering the first and/or second support portions in a direction perpendicular to the base substrate.
4. The lower electrode stage of claim 2,
the first support rod and the first support plate are in an L-shaped structure;
and an L-shaped structure is formed between the second supporting rod and the second supporting plate.
5. The lower electrode stage of claim 1,
the first support part comprises a first support column arranged on the first support substrate, the top end of the first support column forms a support surface of the first support part, and the first support column is hollow;
the second support part comprises a second support column, and the top end of the second support column forms a support surface of the second support part; wherein,
the second supporting columns are all arranged inside the first supporting columns, the area of the supporting surface at the top ends of the first supporting columns is larger than that of the supporting surface at the top ends of the second supporting columns, and through holes for the second supporting columns to pass through are formed in the middle of the supporting surface at the top ends of the first supporting columns;
in the first state, the second support column is contracted inside the first support column through the through hole at the top end of the first support column, so that the support surface of the second support column is stacked below the support surface of the first support column;
in the second state, the second supporting column penetrates out of the first supporting column through the through hole in the top end of the first supporting column, so that the supporting surface of the first supporting column is stacked below the supporting surface of the second supporting column.
6. The lower electrode stage of claim 5,
the through hole position on the holding surface at first support column top is provided with the division board, the division board can the through hole position removes to open or close the through hole.
7. The lower electrode stage of claim 5,
the switching mechanism includes: a second elevation structure connected to the first support portion and/or the second support portion, wherein the second elevation structure is capable of elevating the first support column and/or the second support column in a direction perpendicular to the base substrate when the first support portion and the second support portion are controlled to switch between the first state and the second state.
8. The lower electrode stage of claim 1,
the first supporting part and the second supporting part are both of surface floating point structures, and supporting surfaces of the first supporting part and the second supporting part are both made of ceramic materials.
9. The lower electrode stage of claim 1,
the base substrate is a ceramic substrate.
10. A dry etching apparatus comprising the lower electrode stage according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510600235.9A CN105304446B (en) | 2015-09-18 | 2015-09-18 | The lower electrode base station and dry etching equipment of dry etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510600235.9A CN105304446B (en) | 2015-09-18 | 2015-09-18 | The lower electrode base station and dry etching equipment of dry etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105304446A true CN105304446A (en) | 2016-02-03 |
| CN105304446B CN105304446B (en) | 2017-05-31 |
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| CN201510600235.9A Expired - Fee Related CN105304446B (en) | 2015-09-18 | 2015-09-18 | The lower electrode base station and dry etching equipment of dry etching equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106094269A (en) * | 2016-06-20 | 2016-11-09 | 京东方科技集团股份有限公司 | A kind of etching device |
| CN107564855A (en) * | 2017-08-24 | 2018-01-09 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
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| WO2010132640A2 (en) * | 2009-05-15 | 2010-11-18 | Entegris, Inc. | Electrostatic chuck with polymer protrusions |
| CN102237292A (en) * | 2010-04-26 | 2011-11-09 | Pmt有限公司 | Static sucker with spacer |
| WO2013108452A1 (en) * | 2012-01-20 | 2013-07-25 | 東京エレクトロン株式会社 | Support substrate and method for processing support substrate |
| CN203134754U (en) * | 2013-03-28 | 2013-08-14 | 京东方科技集团股份有限公司 | Dry etching device and lower electrode thereof |
| CN103811332A (en) * | 2014-02-14 | 2014-05-21 | 北京京东方显示技术有限公司 | Lower electrode base platform of dry etching device and dry etching device |
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2015
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010132640A2 (en) * | 2009-05-15 | 2010-11-18 | Entegris, Inc. | Electrostatic chuck with polymer protrusions |
| CN102237292A (en) * | 2010-04-26 | 2011-11-09 | Pmt有限公司 | Static sucker with spacer |
| WO2013108452A1 (en) * | 2012-01-20 | 2013-07-25 | 東京エレクトロン株式会社 | Support substrate and method for processing support substrate |
| CN203134754U (en) * | 2013-03-28 | 2013-08-14 | 京东方科技集团股份有限公司 | Dry etching device and lower electrode thereof |
| CN103811332A (en) * | 2014-02-14 | 2014-05-21 | 北京京东方显示技术有限公司 | Lower electrode base platform of dry etching device and dry etching device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106094269A (en) * | 2016-06-20 | 2016-11-09 | 京东方科技集团股份有限公司 | A kind of etching device |
| CN106094269B (en) * | 2016-06-20 | 2019-01-11 | 京东方科技集团股份有限公司 | A kind of etching device |
| CN107564855A (en) * | 2017-08-24 | 2018-01-09 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
| CN107564855B (en) * | 2017-08-24 | 2020-05-26 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
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| CN105304446B (en) | 2017-05-31 |
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