CN105304446B - The lower electrode base station and dry etching equipment of dry etching equipment - Google Patents
The lower electrode base station and dry etching equipment of dry etching equipment Download PDFInfo
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- CN105304446B CN105304446B CN201510600235.9A CN201510600235A CN105304446B CN 105304446 B CN105304446 B CN 105304446B CN 201510600235 A CN201510600235 A CN 201510600235A CN 105304446 B CN105304446 B CN 105304446B
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Abstract
The invention provides the lower electrode base station and dry etching equipment of a kind of dry etching equipment, the lower electrode base station includes：Base station substrate；Multiple supporting constructions on base station substrate, including the first support section and the second support section, in first state, the supporting surface of the supporting surface higher than the second support section of the first support section, the supporting surface of the second support section is layered in the supporting surface lower section of the first support section；In the second state, the supporting surface of the supporting surface higher than the first support section of the second support section, the supporting surface of the first support section is layered in the supporting surface lower section of the second support section；For the switching mechanism for controlling the first support section and the second support section to switch between the first state and a second state.The lower electrode base station of dry etching equipment provided by the present invention, it is possible to reduce bad due to being imprinted caused by deposition foreign matter on supporting surface, and underlay substrate damage problem will not be produced.
Description
Technical field
Lower electrode base station and dry method the present invention relates to lithographic technique field, more particularly to a kind of dry etching equipment are carved
Erosion equipment.
Background technology
In display technology field, underlay substrate is performed etching by dry etch process generally, to make corresponding figure
Shape (patten).Specifically, underlay substrate to be etched is placed in using in dry etching equipment, using plasma discharge come
Material to be etched is performed etching on removal underlay substrate.
Dry etching equipment of the prior art mainly includes：Reaction chamber, the upper electrode in reaction chamber and bottom
Electrode, is used to place the base station of underlay substrate on lower electrode；In the specific implementation, underlay substrate to be etched is placed in
On base station above lower electrode, plasma gas is passed through in reaction chamber, reaction chamber is closed, it is upper electrode and lower electrode
Applied voltage, forms therebetween electrical potential difference, so as to promote plasma to be moved to underlay substrate, underlay substrate is carved
Erosion.
Fig. 1 show the structural representation of the lower electrode base station of prior art dry etching equipment.As shown in figure 1, mesh
Before, the base station above lower electrode includes the surface floating-point (Embossing Dot) on base station substrate 10 and the surface of base station substrate 10
20 and support bar (PIN) 30, the surface floating-point 20 is made up of aluminium oxide ceramics.With the growth of lower electrode use time, table
The accessory substance that face floating-point 20 is precipitated above can be more and more, due to so as to cause the temperature at the surface floating-point 20 of diverse location to go out
Existing difference, because the difference of temperature can cause etch rate to have differences, etching effect there is difference, so as to cause impressing not
The generation of good (Embossing Mura).
Currently in order to solving the above problems, the scheme for being used just is to try to reduce the contact surface of stamp point and underlay substrate
Product, for example, stamp point is made into zigzag or stock shape etc. for the head contacted with underlay substrate, though so
Above-mentioned stamp can so be improved bad, but because the hardness of aluminium oxide ceramics is higher, general its hardness is higher than glass, when to be etched
Underlay substrate be placed in when on hardness surface floating-point higher, when the contact area of surface floating-point and underlay substrate is too small, cause
The pressure that underlay substrate bears is too big, so as to cause underlay substrate to damage (Glass Broken).
The content of the invention
It is an object of the invention to provide the lower electrode base station and dry etching equipment of a kind of dry etching equipment, can
Be effectively improved impressing it is bad while, do not result in underlay substrate damage.
Technical scheme provided by the present invention is as follows：
A kind of lower electrode base station of dry etching equipment, including：
Base station substrate；
Multiple supporting constructions on the base station substrate, the supporting construction includes the first support section and second
Support part point, has first state and the second state between first support section and second support section, wherein,
In the first state, the supporting surface of first support section is higher than the supporting surface of second support section,
And the supporting surface of second support section is layered in the supporting surface lower section of first support section；In second state,
The supporting surface of second support section higher than first support section supporting surface, and first support section support
Surface layer is stacked in the supporting surface lower section of second support section；
And, for controlling first support section and second support section in the first state and described
The switching mechanism switched between two-state, first support section and second support section connect with the switching mechanism
Connect.
Further, first support section includes：It is arranged on the first support bar on the base station substrate；And, even
Be connected on the top of the first support bar, and at least partly towards direction where second support section extend and with the base station
The first supporting plate that substrate-parallel is set, is collectively forming towards described the between the first support bar and first supporting plate
First accommodation space of direction opening where two support sections；
Second support section includes：It is arranged on the second support bar on the base station substrate；And, it is connected to described
The top of two support bars, and at least partly extend and base station substrate-parallel setting towards direction where first support section
The second supporting plate, be collectively forming between the second support bar and second supporting plate towards the first support section institute
In the second accommodation space of direction opening；
In the first state, second support section is placed in first accommodation space, so that described second
Supporting plate is layered in the first supporting plate lower section；
In second state, first support section is placed in second accommodation space, so that described first
Supporting plate is layered in the second supporting plate lower section.
Further, the switching mechanism includes：
The first translation structure being connected with the first support bar and/or the second support bar；And, with described first
Support bar and/or the first lifting structure of second support bar connection；
Wherein, when control first support section and second support section are in the first state and described second
When switching between state, first translation structure can with the base station substrate in the side with the base station substrate-parallel
First support section and/or second support section are translated up, first lifting structure can be perpendicular to institute
First support section and/or second support section are lifted on the direction for stating base station substrate.
Further, it is of an L-shaped structure between the first support bar and first supporting plate；The second support bar with
It is of an L-shaped structure between second supporting plate.
Further, first support section includes the first support column being arranged in first support substrate, institute
The top for stating the first support column forms the supporting surface of first support section, the first support column inner hollow；
Second support section includes the second support column, and the top of second support column forms second supporting part
The supporting surface for dividing；Wherein,
Second support column is arranged at the inside of first support column, in the support on the first support column top
Face area is more than the supporting surface area on the second support column top, and the supporting surface middle part on the first support column top opens up
There is the through hole for being passed through for second support column；
In the first state, second support column is shunk in described by the through hole on the first support column top
Inside one support column, so that the supporting surface of second support column is layered in the supporting surface lower section of first support column；
In second state, second support column passes described first by the through hole on the first support column top
Outside support column, so that the supporting surface of first support column is layered in the supporting surface lower section of second support column.
Further, the lead to the hole site on the supporting surface on the first support column top is provided with division board, the isolation
Plate can be moved in the lead to the hole site, to open or close the through hole.
Further, the switching mechanism includes：It is connected with first support section and/or second support section
The second lifting structure, wherein, when controlling first support section and second support section in the first state and
When switching between second state, second lifting structure can lift institute on the direction of the base station substrate
State the first support column and/or second support column.
Further, first support section and second support section are surface floating-point structure, described first
The supporting surface of support section and second support section is made of ceramic material.
Further, the base station substrate uses ceramic substrate.
A kind of dry etching equipment, including lower electrode base station as described above.
Beneficial effects of the present invention are as follows：
The lower electrode base station of dry etching equipment provided by the present invention, by the surface floating-point of substrate surface
(Embossing Dot) is improved, and is designed to be layered on top of each other and alternately two supporting parts of support substrate substrate
Point, in this way, when first time etching technics is carried out using the first support section come support substrate substrate, and the second support section
Supporting surface does not have deposition of foreign material due to being layered in below the supporting surface of the first support section, so as to carry out second etching
During technique, during using the second support section come support substrate substrate, it is possible to reduce caused by deposition foreign matter on supporting surface
Impressing is bad；Also, each support section will not reduce with the contact area of underlay substrate, underlay substrate will not be produced to damage and to be asked
Topic.
Brief description of the drawings
Fig. 1 show the structural representation of the lower electrode base station of prior art dry etching equipment；
Fig. 2 represents the top plan view of the lower electrode base station of the dry etching equipment provided in the embodiment of the present invention；
Fig. 3 represents structure of the supporting construction of the lower electrode base station provided in the embodiment of the present invention 1 in first state
Schematic diagram；
Fig. 4 represents structure of the supporting construction of the lower electrode base station provided in the embodiment of the present invention 1 in the second state
Schematic diagram；
Fig. 5 represents structure of the supporting construction of the lower electrode base station provided in the embodiment of the present invention 2 in first state
Schematic diagram；
Fig. 6 represents structure of the supporting construction of the lower electrode base station provided in the embodiment of the present invention 2 in the second state
Schematic diagram.
Specific embodiment
Principle of the invention and feature are described below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
It is non-for limiting the scope of the present invention.
Lower electrode base station upper surface floating-point for dry etching equipment in the prior art can be deposited in etching process
Foreign matter and cause to imprint bad generation, and reducing surface floating-point can cause underlay substrate to damage with the contact area of underlay substrate
Problem, the invention provides a kind of lower electrode base station of dry etching equipment, be effectively improved impressing it is bad while, no
Underlay substrate can be caused to damage.
The lower electrode base station of the dry etching equipment that the present invention is provided is to be used to support to be etched on lower electrode
Underlay substrate base station.The base station and the lower electrode stacking set, the combination of the two similarly to the prior art,
Mainly the base station is specifically described below of the invention.
As shown in Figures 2 to 6, the lower electrode base station of dry etching equipment provided by the present invention, including：
Base station substrate 200；
Multiple supporting constructions 100 on the base station substrate 200, the supporting construction 100 includes the first supporting part
Points 101 and second support section 102, there is the first shape between first support section 101 and second support section 102
State and the second state, wherein in the first state, the supporting surface of first support section 101 is higher than second supporting part
Points 102 supporting surface, and the supporting surface of second support section 102 is layered in the supporting surface of first support section 101
Lower section, in second state, the support of the supporting surface higher than first support section 101 of second support section 102
Face, and first support section 101 supporting surface be layered in second support section 102 supporting surface lower section；
And, for controlling first support section 101 and second support section 102 in the first state and
The switching mechanism switched between second state, first support section 101 and second support section 102 with it is described
Switching mechanism is connected.
The lower electrode base station of dry etching equipment provided by the present invention, the supporting construction set on base station substrate 200
100 are designed to be layered on top of each other and alternately two support sections of support substrate substrate, in this way, carrying out first time etching
Using the first support section 101 come support substrate substrate during technique, and the supporting surface of the second support section 102 is due to being layered in
The supporting surface lower section of one support section 101, does not have deposition of foreign material, so as to when second etching technics is carried out, using second
When support section 102 carrys out support substrate substrate, it is possible to reduce bad due to being imprinted caused by deposition foreign matter on supporting surface；And
And, each support section will not reduce with the contact area of underlay substrate, will not produce underlay substrate damage problem.
It should be noted that underlay substrate provided in an embodiment of the present invention can be glass substrate or flexible base board etc..Example
Such as：The underlay substrate can be the underlay substrate of tft array substrate.Said by taking glass substrate as an example in the embodiment of the present invention
It is bright.
In the lower electrode base station that the embodiment of the present invention is provided, it is preferred that first support section 101 and described
Second support section 102 is surface floating-point structure (that is, Embossing Dot), first support section 101 and described
The supporting surface of two support sections 102 is made of ceramic material, and the base station substrate 200 uses ceramic substrate, at least upper table
Face is ceramic material.Of course, it should be understood that specific material and the base station substrate for the supporting construction 100
200 specific material can be not limited merely to this.
Hereinafter illustrate several preferred embodiments of the lower electrode base station of the dry etching equipment that the present invention is provided.
Embodiment 1
Fig. 3 and Fig. 4 show the lower electrode base station upper support structure that the present invention provides provided dry etching equipment
The structural representation of 100 the first embodiment.
In the present embodiment, as shown in Figure 3 and Figure 4, first support section 101 includes being arranged on the base station substrate
First support bar 1011 on 200 and be connected to the first support bar 1011 top the first supporting plate 1012, it is described
At least a portion of first supporting plate 1012 towards the place direction of second support section 102 extend, and with the base station substrate
200 are arranged substantially in parallel, so as to be collectively forming a direction between the first support bar 1011 and first supporting plate 1012
First accommodation space of the place direction opening of second support section 102, the supporting surface of first support section 101 be by
The upper surface of first supporting plate 1012 is formed；
Second support section 102 includes the second support bar 1021 being arranged on the base station substrate 200 and connection
In second supporting plate 1022 on the top of the second support bar 1021, at least a portion of second supporting plate 1022 is towards institute
The extension of the place direction of the first support section 101 is stated, and is be arranged in parallel with the base station substrate 200, so that the second support bar
One towards the place direction opening of first support section 101 is collectively forming between 1021 and second supporting plate 1022
Two accommodation spaces, the supporting surface of second support section 102 is formed by the upper surface of second supporting plate 1022；
Wherein in the first state, second support section 102 can be placed in first accommodation space, with
Make the support substrate substrate of first supporting plate 1012, second supporting plate 1022 is layered under first supporting plate 1012
Side, is covered by first supporting plate 1012；In second state, first support section 101 is placed in described second
In accommodation space, so that the support substrate substrate of first supporting plate 1012, first supporting plate 1012 is layered in described
The lower section of two supporting plate 1022, is covered by first supporting plate 1012.
In the present embodiment, as shown in Figure 3 and Figure 4, it is preferred that first supporting plate 1012 and the first support bar
A L-type structure is constituted between 1011, a L-type knot is constituted between second supporting plate 1022 and the second support bar 1021
Structure, and the L-type structure and the second supporting plate 1022 and second support bar that the first supporting plate 1012 is constituted with first support bar 1011
1021 L-type structures for constituting are oppositely arranged.
It should be appreciated that in other embodiments of the invention, first supporting plate 1012 and described first is supported
The structure of bar 1011 can be not only limited to this, for example：Between first supporting plate 1012 and the first support bar 1011
And can be with other structures between the second support bar 1021, it is only necessary to so that the first supporting plate 1012 and first
One first accommodation space is constituted between strut 1011,1021 and second supporting plate of the second support bar 1022 constitutes one second and holds
Between being empty, and enable that the first supporting plate 1012 and the second supporting plate 1022 are laminated completely.
In the present embodiment, it is preferred that the switching mechanism includes：
The first translation structure being connected with the first support bar 1011 and/or the second support bar 1021；And with
The first support bar 1011 and/or the first lifting structure of the connection of the second support bar 1021；
When controlling first support section 101 and second support section 102 in the first state and described the
When switching between two-state, first translation structure can with the base station substrate 200 on the base station substrate 200
Parallel side translates up first support section 101 and/or second support section 102, first lifting structure
First support section 101 and/or second supporting part can be being lifted on the direction of the base station substrate 200
Divide 102.
In such scheme, the first supporting plate 1012 and the second supporting plate 1022 are stacked, it is possible in the switching machine
Exchange position under first translation structure of structure and the control of the first elevating mechanism, comes alternately to lining with different etching technique
Substrate is supported, simple structure, easily operation.
Specifically, as shown in figure 3, when the supporting surface for needing the first support section 101 is higher than the branch of the second support section 102
During support face, the first support section 101 is moved to from second accommodation space first with first translation structure described
Outside second accommodation space, then control first support section 101 to rise or control institute by first elevating mechanism
State the second support section 102 to decline, recycle first translation mechanism by the supporting part of first support section 101 or second
Divide 102 translations so that first supporting plate 1012 is laminated in the top of the second supporting plate 1022；
As shown in figure 4, when the supporting surface for needing the second support section 102 is higher than the supporting surface of the first support section 101,
The second support section 102 is moved into described first from first accommodation space first with first translation structure to house
Outside space, then decline or control described second by first elevating mechanism control first support section 101
Support part point 102 rises, and recycles first translation mechanism that the support section 101 of second support section 102 or first is flat
Move so that second supporting plate 1022 is laminated in the top of the first supporting plate 1012.
Of course, it should be understood that the above is only there is provided a kind of preferred implementation of switching mechanism, in practical application
In, the specific implementation of the switching mechanism can also be not limited merely to this, will not enumerate herein.
Carved with the SD dry method in TFT (Thin Film Transistor, thin film transistor (TFT)) substrate manufacturing process below
As a example by erosion (Dry Etch) technique, it is described in detail come the course of work to the lower electrode base station provided in the present embodiment.
Active layer (Active) etching and photoresist (PR are mainly included using dry etching in the SD dry etch process of TFT substrate
Glue) ashing treatment (Ashing).
When the lower electrode base station of the dry etching equipment that the present embodiment is provided carries out SD dry etchings, active layer is carried out
During etching, first supporting plate 1012 is controlled to be laminated in the top of second supporting plate 1022 by the switching mechanism,
Using the support substrate substrate of the first supporting plate 1012, and the second supporting plate 1022 is contained in the first supporting plate 1012 and the first support
Capped isolation in the first accommodation space that bar 1011 is constituted；
After active layer etching is completed, second supporting plate 1022 is controlled to translate out by the switching mechanism described
The lower section of first supporting plate 1012, then first supporting plate 1012 is declined or rises the second supporting plate 1022, finally control
First supporting plate 1012 and second supporting plate 1022 relative translation so that first supporting plate 1012 is layered in
The lower section of two supporting plate 1022, so as to utilize the support substrate substrate of the second supporting plate 1022 when photoresist ashing is carried out；
After photoresist ashing completion, again by the switching mechanism control second supporting plate 1022 decline or
First supporting plate 1012 rises so that the second supporting plate 1022 is laminated in the lower section of the first supporting plate 1012, then carries out base station
Pin (support bar) lifting so that the precipitation of foreign matter is attached in the first supporting plate 1012, and the second supporting plate 1022 will not
It is affected, the effect that bad (Embossing Mura) is produced is imprinted so as to reach to reduce.
Embodiment 2
Fig. 5 to Fig. 6 show the lower electrode base station upper support structure that the present invention provides provided dry etching equipment
The structural representation of 100 second embodiment.
In the present embodiment, as shown in Figure 5 and Figure 6, first support section 101 includes being arranged on the base station substrate
The first support substrate 1013 on 200 and the first support column 1014 being arranged in first support substrate 1013, described
The top of one support column 1014 forms the supporting surface of first support section 101, first support substrate 1013 and described
The inner hollow of first support column 1014；Second support section 102 includes the second support substrate and is arranged on described second
The second support column on support group bottom, the top of second support column forms the supporting surface of second support section 102；
Wherein, second support substrate and second support column are arranged at first support substrate 1013 and institute
The inside of the first support column 1014 is stated, the supporting surface area on the top of the first support column 1014 is more than second support column
Offered in the middle part of the supporting surface area on top, and the supporting surface on the top of the first support column 1014 for being supported for described second
The through hole that post is passed through；
As shown in figure 5, in the first state, through hole of second support column from the top of the first support column 1014
Shrink inside first support column 1014, so that the supporting surface of second support column is layered in first support column
1014 supporting surface lower section；As shown in fig. 6, in second state, second support column is from first support column 1014
The through hole on top is passed outside first support column 1014 so that the supporting surface of first support column 1014 be layered in it is described
The supporting surface lower section of the second support column.
In the present embodiment, it is preferred that the lead to the hole site on the supporting surface on the top of the first support column 1014 is provided with
Division board, the division board can be moved in the lead to the hole site, to open or close the through hole.
Specifically, in the first state, the division board closes the through hole, and causes first support column 1014
The supporting surface on top is formation state, and support substrate substrate；In second state, the division board opens the through hole,
To cause that second support column is stretched out outside first support column 1014, and support substrate substrate.As can be seen here, by setting
It is a plane that the division board is put when can ensure that the supporting surface of first support column 1014 is contacted with underlay substrate, and is avoided
Bad generation is caused due to supporting surface out-of-flatness.
In the present embodiment, it is preferred that the switching mechanism includes：With first support section 101 and/or described
Second lifting structure of the connection of two support section 102, wherein when control first support section 101 and second supporting part
When dividing 102 to switch between the first state and second state, second lifting structure can be perpendicular to described
First support column 1014 and/or second support column are lifted on the direction of base station substrate 200.
Specifically, when the supporting surface for needing the first support section 101 is higher than the supporting surface of the second support section 102, profit
The first support column 1014 is risen with second lifting structure or declines the second support column so that first support column
1014 supporting surface is laminated in the supporting surface top of the second support column；
When need the supporting surface of the second support section 102 higher than the first support section 101 supporting surface when, using described the
First support column 1014 is declined or rises the second support column by two lifting structures so that the support surface layer of second support column
It is laminated on the supporting surface top of the first support column 1014.
Of course, it should be understood that the above is only there is provided a kind of preferred implementation side of switching mechanism in the present embodiment
Formula, in actual applications, the specific implementation of the switching mechanism can also have various, for example, second support column is also
Can be a Telescopic rod structure, the switching construction is used to control second support column to stretch；Herein for the switching machine
The specific implementation of structure will not enumerate.
Carved with the SD dry method in TFT (Thin Film Transistor, thin film transistor (TFT)) substrate manufacturing process below
As a example by erosion (Dry Etch) technique, it is described in detail come the course of work to the lower electrode base station provided in the present embodiment.
When the lower electrode base station of the dry etching equipment that the present embodiment is provided carries out SD dry etchings, had first
Active layer is etched, and controls second support column to be contracted to inside first support column 1014 by the switching mechanism, and is made
The apical support surface layer for obtaining the second support column is laminated on below the apical support face of first support column 1014, and the first support column
1014 apical support face support substrate substrate, and the second support column is then completely isolated in the first support column 1014 and the first support
Inside substrate 1013；
After active layer etching is completed, second support column is controlled to extend out to described first by the switching mechanism
Outside support column 1014 so that apical support of the apical support face of first support column 1014 less than second support column
Face, so as to utilize the second support column support substrate substrate when photoresist ashing is carried out；
After photoresist ashing completion, second support column is controlled to decline or described again by the switching mechanism
First support column 1014 rises so that the second support column is shunk inside the first support column 1014, then controls the (branch of Pin on base station
Strut) lifting, so that the precipitation of foreign matter is attached on the apical support face of the first support column 1014, and the top of the second support column
End supporting surface is then unaffected, and the effect that bad (Embossing Mura) is produced is imprinted so as to reach to reduce.
A kind of dry etching equipment is additionally provided in the embodiment of the present invention, it includes lower electrode base station as described above.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (10)
1. the lower electrode base station of a kind of dry etching equipment, it is characterised in that including：
Base station substrate；
Multiple supporting constructions on the base station substrate, the supporting construction includes the first support section and the second supporting part
Point, there is first state and the second state between first support section and second support section, wherein,
In the first state, the supporting surface of the supporting surface higher than second support section of first support section, and institute
The supporting surface for stating the second support section is layered in the supporting surface lower section of first support section；It is described in second state
The supporting surface of the second support section higher than first support section supporting surface, and first support section support surface layer
It is stacked in the supporting surface lower section of second support section；
And, for controlling first support section and second support section in the first state and second shape
The switching mechanism switched between state, first support section and second support section are connected with the switching mechanism.
2. lower electrode base station according to claim 1, it is characterised in that
First support section includes：It is arranged on the first support bar on the base station substrate；And, it is connected to described first
The top of strut, and at least partly set with the base station substrate-parallel towards direction extension where second support section
First supporting plate, is collectively forming towards where second support section between the first support bar and first supporting plate
First accommodation space of direction opening；
Second support section includes：It is arranged on the second support bar on the base station substrate；And, it is connected to described second
The top of strut, and at least partly extend towards direction where first support section and the base station substrate-parallel is set the
Two supporting plates, are collectively forming towards the first support section place side between the second support bar and second supporting plate
To the second accommodation space of opening；
Wherein,
In the first state, second support section is placed in first accommodation space, so that second support
Flaggy is stacked in the first supporting plate lower section；
In second state, first support section is placed in second accommodation space, so that first support
Flaggy is stacked in the second supporting plate lower section.
3. lower electrode base station according to claim 2, it is characterised in that
The switching mechanism includes：
The first translation structure being connected with the first support bar and/or the second support bar；And, with the described first support
Bar and/or the first lifting structure of second support bar connection；
Wherein, when control first support section and second support section are in the first state and second state
Between when switching, first translation structure can with the base station substrate on the direction of the base station substrate-parallel on
First support section and/or second support section are translated, first lifting structure can be perpendicular to the base
First support section and/or second support section are lifted on the direction of stylobate plate.
4. lower electrode base station according to claim 2, it is characterised in that
It is of an L-shaped structure between the first support bar and first supporting plate；
It is of an L-shaped structure between the second support bar and second supporting plate.
5. lower electrode base station according to claim 1, it is characterised in that
First support section includes the first support column being arranged on the base station substrate, the top of first support column
Form the supporting surface of first support section, the first support column inner hollow；
Second support section includes the second support column, and the top of second support column forms second support section
Supporting surface；Wherein,
Second support column is arranged at the inside of first support column, in the supporting surface face on the first support column top
Product is more than the supporting surface area on the second support column top, and the supporting surface middle part on the first support column top offers use
In the through hole passed through for second support column；
In the first state, second support column is shunk in described first by the through hole on the first support column top
Inside dagger, so that the supporting surface of second support column is layered in the supporting surface lower section of first support column；
In second state, second support column passes first support by the through hole on the first support column top
Outside post, so that the supporting surface of first support column is layered in the supporting surface lower section of second support column.
6. lower electrode base station according to claim 5, it is characterised in that
Lead to the hole site on the supporting surface on the first support column top is provided with division board, and the division board can be described logical
Hole site is moved, to open or close the through hole.
7. lower electrode base station according to claim 5, it is characterised in that
The switching mechanism includes：The second lifting knot being connected with first support section and/or second support section
Structure, wherein, when control first support section and second support section are in the first state and second state
Between when switching, second lifting structure can lift first support column on the direction of the base station substrate
And/or second support column.
8. lower electrode base station according to claim 1, it is characterised in that
First support section and second support section are surface floating-point structure, first support section and described
The supporting surface of the second support section is made of ceramic material.
9. lower electrode base station according to claim 1, it is characterised in that
The base station substrate uses ceramic substrate.
10. a kind of dry etching equipment, it is characterised in that including the lower electrode base as described in any one of claim 1 to 9
Platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510600235.9A CN105304446B (en) | 2015-09-18 | 2015-09-18 | The lower electrode base station and dry etching equipment of dry etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510600235.9A CN105304446B (en) | 2015-09-18 | 2015-09-18 | The lower electrode base station and dry etching equipment of dry etching equipment |
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| CN106094269B (en) * | 2016-06-20 | 2019-01-11 | 京东方科技集团股份有限公司 | A kind of etching device |
| CN107564855B (en) * | 2017-08-24 | 2020-05-26 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102237292A (en) * | 2010-04-26 | 2011-11-09 | Pmt有限公司 | Static sucker with spacer |
| CN203134754U (en) * | 2013-03-28 | 2013-08-14 | 京东方科技集团股份有限公司 | Dry etching device and lower electrode thereof |
| CN103811332A (en) * | 2014-02-14 | 2014-05-21 | 北京京东方显示技术有限公司 | Lower electrode base platform of dry etching device and dry etching device |
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| JP5731485B2 (en) * | 2009-05-15 | 2015-06-10 | インテグリス・インコーポレーテッド | Electrostatic chuck with polymer protrusions |
| WO2013108452A1 (en) * | 2012-01-20 | 2013-07-25 | 東京エレクトロン株式会社 | Support substrate and method for processing support substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237292A (en) * | 2010-04-26 | 2011-11-09 | Pmt有限公司 | Static sucker with spacer |
| CN203134754U (en) * | 2013-03-28 | 2013-08-14 | 京东方科技集团股份有限公司 | Dry etching device and lower electrode thereof |
| CN103811332A (en) * | 2014-02-14 | 2014-05-21 | 北京京东方显示技术有限公司 | Lower electrode base platform of dry etching device and dry etching device |
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