CN105280626A - 超小超薄高光效侧射型高亮白光led元件 - Google Patents

超小超薄高光效侧射型高亮白光led元件 Download PDF

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CN105280626A
CN105280626A CN201410294604.1A CN201410294604A CN105280626A CN 105280626 A CN105280626 A CN 105280626A CN 201410294604 A CN201410294604 A CN 201410294604A CN 105280626 A CN105280626 A CN 105280626A
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led chip
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蔡志嘉
窦鑫
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AMICC OPTO-ELECTRONICS TECHNOLOGY Co Ltd
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AMICC OPTO-ELECTRONICS TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

本发明涉及一种超小超薄高光效侧射型高亮白光LED元件，包括基板和发光LED芯片，所述发光LED芯片固定在基板上，所述基板上设置有若干穿透其上下底面的导通孔，在该导通孔内填充有导电体，所述发光LED芯片的正极通过正极导线与其中一个导通孔内的导电体电连接，该发光LED芯片的负极通过负极导线与另外一个导通孔内的导电体电连接。本发明提供一种厚度极薄、且散热效果好的超小超薄高光效侧射型高亮白光LED元件。

Description

超小超薄高光效侧射型高亮白光LED元件
技术领域
本发明涉及一种超小超薄高光效侧射型高亮白光LED元件，尤其涉及一种小型侧发光型LED元件。
背景技术
目前现行市面上的小型侧发光型LED指示灯有两大类：
(1)支架类：主要以PPA树脂+铜支架为基板，主要尺寸有020(3.8*1.05*0.6mm)、010(3.8*1.0*0.4mm)、215(2.8*1.0*0.9mm)、335(3.8*0.6*1.2mm),其尺寸相对较大，而且支架类侧射型LED主要集中在020、010两款型号上，但是厚度最薄也要0.4mm。
(2)PCB类：主要是以BT树脂为基板，主要尺寸有0603(1.6*1.1*0.6mm)、0805(2.0*1.1*0.6mm)、1204(3.0*1.5*1.0mm)，PCB类侧射型白光因传统工艺尺寸较大且PCB热阻过高，高亮白光目前无法解决散热问题。
发明内容
本发明的目的是克服现有技术存在的缺陷，提供一种厚度极薄、且散热效果好的超小超薄高光效侧射型高亮白光LED元件。
本发明解决其技术问题所采用的技术方案是：一种超小超薄高光效侧射型高亮白光LED元件，包括基板和发光LED芯片，所述发光LED芯片固定在基板上，所述基板上设置有若干穿透其上下底面的导通孔，在该导通孔内填充有导电体，所述发光LED芯片的正极通过正极导线与其中一个导通孔内的导电体电连接，该发光LED芯片的负极通过负极导线与另外一个导通孔内的导电体电连接。
所述导电体为铜柱或导电胶。
所述基板的下底面上覆盖有第一金属导电层，该金属导电层分为相互不连接的正极区域和负极区域，所述负极区域连续覆盖在与负极导线连接的导电体下方，并与该导电体接触，所述正极区域连续覆盖在其他导电体下方，并与其他导电体接触。
所述基板的上底面上覆盖有第二金属导电层，该金属导电层分为相互不连接的正极区域和负极区域，所述负极区域连续覆盖在与负极导线连接的导电体上方，并与该导电体接触，所述正极区域连续覆盖在其他导电体上方，并与其他导电体接触，所述发光LED芯片固连在正极区域上，所述正极导线与正极区域电连接，所述负极导线与负极区域电连接。
所述第一和第二金属导电层是镀金层或镀银层或铜箔层。
所述基板为PCB基板。一种超小超薄高光效侧射型高亮白光LED元件的制备工艺，步骤如下：
a、准备原材料：在PCB基板上钻导通孔并采用塞铜工艺将PCB基板上下底面导通，形成塞孔铜柱；
b、固晶：将发光LED芯片通过固晶胶贴附在PCB基板上；
c、烘烤：通过烘烤将发光LED芯片固定在PCB基板上；
d、焊线：将发光LED芯片电极通过金线导通在PCB基板上；
e、压模：使用封装胶通过模具压模成型在PCB基板上；
f、烘烤：通过烘烤将封装胶(Epoxy/Silicone)固化；
g、切割：将产品切割成设计尺寸。
有益效果：
(一)使用PCB基板上加钻导通孔，再通过塞铜设计做为正负极引线,可达到节省空间,缩小产品尺寸的效果。
(二)本产品为铜柱导体设计,与市面上支架类侧射型LED(热组约为80～180°/W)和PCB类侧射型LED(热组约为200～500°/W)相比，本产品热组低于25°/W,达到极好的散热效果,同时在使用此产品时,也能适用于中高功率的操作(30mA～600mA)。
(三)产品极小化极薄化的设计,通过PCB线路设计将正负极分布在PCB基板的底部，使LED产品厚度控制在0.3mm±0.1mm。
(四)本侧射型机种在客户端使用时，朝左或朝右发光时不需重新换机种，可以直接将产品在包装时换向，产品焊盘设计上能达到共用性。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明。
图1是本发明的优选实施例的主视结构示意图；
图2是图1的俯视图；
图3是本发明朝左发光时与散热基板的连接示意图；
图4是本发明朝右发光时与散热基板的连接示意图。
具体实施方式
如图1所示的一种超小超薄高光效侧射型高亮白光LED元件，包括基板1和发光LED芯片2，所述发光LED芯片2固定在基板1上。所述基板1上设置有若干穿透其上下底面的导通孔，在该导通孔内填充有导电体3，所述发光LED芯片2的正极通过正极导线4与其中一个导通孔内的导电体3电连接，该发光LED芯片2的负极通过负极导线5与另外一个导通孔内的导电体3电连接。优选实施方式：所述的导电体3为铜柱或导电胶。
所述基板1的下底面上覆盖有第一金属导电层6，该金属导电层6分为相互不连接的正极区域61和负极区域62，所述负极区域62连续覆盖在与负极导线5连接的导电体3下方，并与该导电体3接触，所述正极区域61连续覆盖在其他导电体3下方，并与其他导电体3接触。
为了降低焊接难度，同时固定导电体3，所述基板1的上底面上覆盖有第二金属导电层7，该金属导电层7分为相互不连接的正极区域71和负极区域72，所述负极区域72连续覆盖在与负极导线5连接的导电体3上方，并与该导电体3接触，所述正极区域71连续覆盖在其他导电体3上方，并与其他导电体3接触，所述发光LED芯片2固连在正极区域71上，所述正极导线4与正极区域71焊接，所述负极导线5与负极区域72焊接。
所述第一和第二金属导电层6、7是镀金层或镀银层或铜箔层，优选铜箔层。所述基板1为PCB基板。
本超小超薄高光效侧射型高亮白光LED元件呈矩形：其长为1.6±0.2mm，宽为0.6±0.2mm，厚度d为0.3±0.1mm。优选：长1.6mm，宽0.6mm，厚0.3mm。
一种超小超薄高光效侧射型高亮白光LED元件的制备工艺，步骤如下：
a、准备原材料：在PCB基板1上钻导通孔并采用塞铜工艺将PCB基板1上下底面导通，形成塞孔铜柱3；
b、固晶：将发光LED芯片2通过固晶胶贴附在PCB基板1上；
c、烘烤：通过烘烤将发光LED芯片2固定在PCB基板1上；
d、焊线：将发光LED芯片2电极通过金线导通在PCB基板1上；
e、压模：使用封装胶通过模具压模成型在PCB基板1上；
f、烘烤：通过烘烤将封装胶固化；
g、切割：将产品切割成设计尺寸。
步骤e中的封装胶可以采用Epoxy或Silicone。
应当理解，以上所描述的具体实施例仅用于解释本发明，并不用于限定本发明。由本发明的精神所引伸出的显而易见的变化或变动仍处于本发明的保护范围之中。

Claims (7)

1.一种超小超薄高光效侧射型高亮白光LED元件，包括基板(1)和发光LED芯片(2)，所述发光LED芯片(2)固定在基板(1)上，其特征在于：所述基板(1)上设置有若干穿透其上下底面的导通孔，在该导通孔内填充有导电体(3)，所述发光LED芯片(2)的正极通过正极导线(4)与其中一个导通孔内的导电体(3)电连接，该发光LED芯片(2)的负极通过负极导线(5)与另外一个导通孔内的导电体(3)电连接。
2.根据权利要求1所述的超小超薄高光效侧射型高亮白光LED元件，其特征在于：所述导电体(3)为铜柱或导电胶。
3.根据权利要求1所述的超小超薄高光效侧射型高亮白光LED元件，其特征在于：所述基板(1)的下底面上覆盖有第一金属导电层(6)，该金属导电层(6)分为相互不连接的正极区域(61)和负极区域(62)，所述负极区域(62)连续覆盖在与负极导线(5)连接的导电体(3)下方，并与该导电体(3)接触，所述正极区域(61)连续覆盖在其他导电体(3)下方，并与其他导电体(3)接触。
4.根据权利要求1所述的超小超薄高光效侧射型高亮白光LED元件，其特征在于：所述基板(1)的上底面上覆盖有第二金属导电层(7)，该金属导电层(7)分为相互不连接的正极区域(71)和负极区域(72)，所述负极区域(72)连续覆盖在与负极导线(5)连接的导电体(3)上方，并与该导电体(3)接触，所述正极区域(71)连续覆盖在其他导电体(3)上方，并与其他导电体(3)接触，所述发光LED芯片(2)固连在正极区域(71)上，所述正极导线(4)与正极区域(71)电连接，所述负极导线(5)与负极区域(72)电连接。
5.根据权利要求3或4所述的超小超薄高光效侧射型高亮白光LED元件，其特征在于：所述第一和第二金属导电层(6、7)是镀金层或镀银层或铜箔层。
6.根据权利要求1所述的超小超薄高光效侧射型高亮白光LED元件，其特征在于：所述基板(1)为PCB基板。
7.一种如权利要求1～6所述的超小超薄高光效侧射型高亮白光LED元件的制备工艺，其特征在于步骤如下：
a、准备原材料：在PCB基板(1)上钻导通孔并采用塞铜工艺将PCB基板(1)上下底面导通，形成塞孔铜柱(3)；
b、固晶：将发光LED芯片(2)通过固晶胶贴附在PCB基板(1)上；
c、烘烤：通过烘烤将发光LED芯片(2)固定在PCB基板(1)上；
d、焊线：将发光LED芯片(2)电极通过金线导通在PCB基板(1)上；
e、压模：使用封装胶通过模具压模成型在PCB基板(1)上；
f、烘烤：通过烘烤将封装胶固化；
g、切割：将产品切割成设计尺寸。
CN201410294604.1A 2014-06-25 2014-06-25 超小超薄高光效侧射型高亮白光led元件 Pending CN105280626A (zh)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106784242A (zh) * 2016-12-27 2017-05-31 佛山市国星光电股份有限公司 Led器件、led灯及加工led器件导电焊线的方法
CN108470814A (zh) * 2018-02-09 2018-08-31 永林电子有限公司 一种模压式侧面发光的led器件
CN108511578A (zh) * 2018-04-19 2018-09-07 庄明磊 一种led照明面板
CN108511579A (zh) * 2018-04-19 2018-09-07 韩继辉 一种面光源的制造方法
CN110473945A (zh) * 2018-05-09 2019-11-19 深圳市聚飞光电股份有限公司 带有电路的led支架及led
CN113130730A (zh) * 2020-01-16 2021-07-16 深圳市聚飞光电股份有限公司 发光器件封装方法及发光器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060186427A1 (en) * 2005-02-18 2006-08-24 Nichia Corporation Side-view type light emitting device
US20070272940A1 (en) * 2003-06-27 2007-11-29 Lee Kong W Semiconductor device with a light emitting semiconductor die
CN102386320A (zh) * 2010-08-30 2012-03-21 夏普株式会社 半导体装置及其检测方法和电子设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070272940A1 (en) * 2003-06-27 2007-11-29 Lee Kong W Semiconductor device with a light emitting semiconductor die
US20060186427A1 (en) * 2005-02-18 2006-08-24 Nichia Corporation Side-view type light emitting device
CN102386320A (zh) * 2010-08-30 2012-03-21 夏普株式会社 半导体装置及其检测方法和电子设备

Cited By (6)

* Cited by examiner, † Cited by third party
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CN106784242A (zh) * 2016-12-27 2017-05-31 佛山市国星光电股份有限公司 Led器件、led灯及加工led器件导电焊线的方法
CN108470814A (zh) * 2018-02-09 2018-08-31 永林电子有限公司 一种模压式侧面发光的led器件
CN108511578A (zh) * 2018-04-19 2018-09-07 庄明磊 一种led照明面板
CN108511579A (zh) * 2018-04-19 2018-09-07 韩继辉 一种面光源的制造方法
CN110473945A (zh) * 2018-05-09 2019-11-19 深圳市聚飞光电股份有限公司 带有电路的led支架及led
CN113130730A (zh) * 2020-01-16 2021-07-16 深圳市聚飞光电股份有限公司 发光器件封装方法及发光器件

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