CN105264676A - Led元件及其制造方法 - Google Patents

Led元件及其制造方法 Download PDF

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Publication number
CN105264676A
CN105264676A CN201480030587.9A CN201480030587A CN105264676A CN 105264676 A CN105264676 A CN 105264676A CN 201480030587 A CN201480030587 A CN 201480030587A CN 105264676 A CN105264676 A CN 105264676A
Authority
CN
China
Prior art keywords
light
layer
moth eye
sapphire substrate
led element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480030587.9A
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English (en)
Chinese (zh)
Inventor
北野司
森美登里
近藤俊行
铃木敦志
难波江宏一
大矢昌辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EL Seed Corp
Original Assignee
EL Seed Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EL Seed Corp filed Critical EL Seed Corp
Publication of CN105264676A publication Critical patent/CN105264676A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
CN201480030587.9A 2013-04-16 2014-04-15 Led元件及其制造方法 Pending CN105264676A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2013-086049 2013-04-16
JP2013-086051 2013-04-16
JP2013086050 2013-04-16
JP2013086051 2013-04-16
JP2013-086050 2013-04-16
JP2013086049 2013-04-16
PCT/JP2014/060763 WO2014171467A1 (ja) 2013-04-16 2014-04-15 Ｌｅｄ素子及びその製造方法

Publications (1)

Publication Number Publication Date
CN105264676A true CN105264676A (zh) 2016-01-20

Family

ID=51731404

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480030587.9A Pending CN105264676A (zh) 2013-04-16 2014-04-15 Led元件及其制造方法

Country Status (5)

Country Link
US (2) US9793434B2 (https=)
JP (3) JP5643920B1 (https=)
CN (1) CN105264676A (https=)
HK (1) HK1214407A1 (https=)
WO (1) WO2014171467A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106299085A (zh) * 2016-09-21 2017-01-04 海迪科（南通）光电科技有限公司 一种偏振发光二极管芯片
CN108447404A (zh) * 2018-04-04 2018-08-24 京东方科技集团股份有限公司 柔性阵列基板、显示装置及柔性阵列基板的制造方法
CN109599469A (zh) * 2018-12-18 2019-04-09 华中科技大学鄂州工业技术研究院 蛾眼结构深紫外发光二极管及制备方法
CN110088921A (zh) * 2016-12-20 2019-08-02 同和电子科技有限公司 半导体发光元件及其制造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3026716B1 (en) * 2013-07-30 2020-12-16 National Institute of Information and Communications Technology Semiconductor light emitting element and method for manufacturing same
JP6436694B2 (ja) * 2014-09-17 2018-12-12 住友化学株式会社 窒化物半導体テンプレートの製造方法
DE102014116999B4 (de) * 2014-11-20 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN107851690A (zh) * 2015-07-17 2018-03-27 Ｓｃｉｖａｘ株式会社 发光元件
JP6524904B2 (ja) 2015-12-22 2019-06-05 日亜化学工業株式会社 発光装置
JP2017175004A (ja) * 2016-03-24 2017-09-28 ソニー株式会社 チップサイズパッケージ、製造方法、電子機器、および内視鏡
EP3528297B1 (en) * 2016-11-22 2021-05-19 National Institute of Information and Communications Technology Light-emitting module provided with semiconductor light-emitting element that emits deep ultraviolet light
JP6841198B2 (ja) * 2017-09-28 2021-03-10 豊田合成株式会社 発光素子の製造方法
US10304993B1 (en) * 2018-01-05 2019-05-28 Epistar Corporation Light-emitting device and method of manufacturing the same
KR102443027B1 (ko) 2018-03-02 2022-09-14 삼성전자주식회사 반도체 발광소자
JP7738851B2 (ja) * 2021-11-24 2025-09-16 国立大学法人京都大学 発光ダイオード素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484183A (zh) * 2009-09-07 2012-05-30 崇高种子公司 半导体发光元件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP4637781B2 (ja) * 2006-03-31 2011-02-23 昭和電工株式会社 ＧａＮ系半導体発光素子の製造方法
JP5082752B2 (ja) 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
JP5379434B2 (ja) 2008-09-22 2013-12-25 学校法人 名城大学 発光素子用サファイア基板の製造方法
JP5477084B2 (ja) * 2010-03-17 2014-04-23 豊田合成株式会社 半導体発光素子およびその製造方法、ランプ、電子機器、機械装置
JP5142236B1 (ja) * 2011-11-15 2013-02-13 エルシード株式会社 エッチング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484183A (zh) * 2009-09-07 2012-05-30 崇高种子公司 半导体发光元件

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106299085A (zh) * 2016-09-21 2017-01-04 海迪科（南通）光电科技有限公司 一种偏振发光二极管芯片
CN110088921A (zh) * 2016-12-20 2019-08-02 同和电子科技有限公司 半导体发光元件及其制造方法
CN110088921B (zh) * 2016-12-20 2022-01-28 同和电子科技有限公司 半导体发光元件及其制造方法
CN108447404A (zh) * 2018-04-04 2018-08-24 京东方科技集团股份有限公司 柔性阵列基板、显示装置及柔性阵列基板的制造方法
CN109599469A (zh) * 2018-12-18 2019-04-09 华中科技大学鄂州工业技术研究院 蛾眼结构深紫外发光二极管及制备方法

Also Published As

Publication number Publication date
JP5728116B2 (ja) 2015-06-03
US9793434B2 (en) 2017-10-17
JP2015119202A (ja) 2015-06-25
HK1214407A1 (zh) 2016-07-22
JPWO2014171467A1 (ja) 2017-02-23
JP5643920B1 (ja) 2014-12-17
JP2015029118A (ja) 2015-02-12
US20160149076A1 (en) 2016-05-26
WO2014171467A1 (ja) 2014-10-23
US20180026154A1 (en) 2018-01-25

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