CN105247098B - 包含有机镍化合物的化学沉积用原料及使用该化学沉积用原料的化学沉积法 - Google Patents

包含有机镍化合物的化学沉积用原料及使用该化学沉积用原料的化学沉积法 Download PDF

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Publication number
CN105247098B
CN105247098B CN201380076725.2A CN201380076725A CN105247098B CN 105247098 B CN105247098 B CN 105247098B CN 201380076725 A CN201380076725 A CN 201380076725A CN 105247098 B CN105247098 B CN 105247098B
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China
Prior art keywords
nickel
chemical deposition
raw material
film
derivatives
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Chinese (zh)
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CN105247098A (zh
Inventor
铃木和治
斋藤昌幸
原田了辅
锅谷俊
锅谷俊一
宫崎智史
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Tanaka Kikinzoku Kogyo KK
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Tanaka Kikinzoku Kogyo KK
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04Nickel compounds

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201380076725.2A 2013-05-22 2013-12-27 包含有机镍化合物的化学沉积用原料及使用该化学沉积用原料的化学沉积法 Active CN105247098B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013108030A JP5352024B1 (ja) 2013-05-22 2013-05-22 有機ニッケル化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
JP2013-108030 2013-05-22
PCT/JP2013/085069 WO2014188629A1 (fr) 2013-05-22 2013-12-27 Matière première de dépôt chimique en phase vapeur comprenant un composé organique du nickel, et procédé de dépôt chimique en phase vapeur utilisant ladite matière première de dépôt chimique en phase vapeur

Publications (2)

Publication Number Publication Date
CN105247098A CN105247098A (zh) 2016-01-13
CN105247098B true CN105247098B (zh) 2017-07-28

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ID=49764979

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CN201380076725.2A Active CN105247098B (zh) 2013-05-22 2013-12-27 包含有机镍化合物的化学沉积用原料及使用该化学沉积用原料的化学沉积法

Country Status (7)

Country Link
US (1) US9447495B2 (fr)
EP (1) EP3000912A4 (fr)
JP (1) JP5352024B1 (fr)
KR (2) KR20150009905A (fr)
CN (1) CN105247098B (fr)
TW (1) TWI526561B (fr)
WO (1) WO2014188629A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5770806B2 (ja) * 2013-10-02 2015-08-26 田中貴金属工業株式会社 化学蒸着法によるSi基板上へのニッケル薄膜、及び、Si基板上へのNiシリサイド薄膜の製造方法
US20180175290A1 (en) * 2016-12-19 2018-06-21 Arm Ltd. Forming nucleation layers in correlated electron material devices
JP6954776B2 (ja) * 2017-06-29 2021-10-27 株式会社Adeka 薄膜形成用原料及び薄膜の製造方法
JP6589112B2 (ja) 2017-10-19 2019-10-16 株式会社村田製作所 シクロペンタジエニルニッケル錯体化合物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3121729A (en) * 1959-07-03 1964-02-18 Union Carbide Corp Cyclopentadienyl-nickel-cyclopentenyl compounds and processes therefor
DE3510982A1 (de) * 1985-03-22 1986-09-25 Schering AG, Berlin und Bergkamen, 1000 Berlin Herstellung metallischer strukturen auf nichtleitern
JP4581119B2 (ja) 2003-09-17 2010-11-17 株式会社トリケミカル研究所 NiSi膜形成材料およびNiSi膜形成方法
JP4353371B2 (ja) * 2004-08-06 2009-10-28 株式会社トリケミカル研究所 膜形成方法
KR20100099322A (ko) * 2007-12-25 2010-09-10 쇼와 덴코 가부시키가이샤 니켈 함유 막 형성 재료 및 그 제조 방법
WO2010032673A1 (fr) * 2008-09-22 2010-03-25 昭和電工株式会社 Matériau de formation d’un film contenant du nickel et procédé de fabrication d’un film contenant du nickel

Also Published As

Publication number Publication date
JP5352024B1 (ja) 2013-11-27
US20160115587A1 (en) 2016-04-28
KR20150009905A (ko) 2015-01-27
TW201446993A (zh) 2014-12-16
KR20150022950A (ko) 2015-03-04
JP2014227373A (ja) 2014-12-08
TWI526561B (zh) 2016-03-21
WO2014188629A1 (fr) 2014-11-27
US9447495B2 (en) 2016-09-20
EP3000912A4 (fr) 2017-01-25
EP3000912A1 (fr) 2016-03-30
CN105247098A (zh) 2016-01-13

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