CN105247098B - 包含有机镍化合物的化学沉积用原料及使用该化学沉积用原料的化学沉积法 - Google Patents
包含有机镍化合物的化学沉积用原料及使用该化学沉积用原料的化学沉积法 Download PDFInfo
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- CN105247098B CN105247098B CN201380076725.2A CN201380076725A CN105247098B CN 105247098 B CN105247098 B CN 105247098B CN 201380076725 A CN201380076725 A CN 201380076725A CN 105247098 B CN105247098 B CN 105247098B
- Authority
- CN
- China
- Prior art keywords
- nickel
- chemical deposition
- raw material
- film
- derivatives
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002994 raw material Substances 0.000 title claims abstract description 32
- 238000005234 chemical deposition Methods 0.000 title claims abstract description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 95
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 125000000392 cycloalkenyl group Chemical group 0.000 claims abstract description 11
- 125000000753 cycloalkyl group Chemical class 0.000 claims abstract description 5
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims abstract description 5
- 125000001424 substituent group Chemical group 0.000 claims description 16
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 14
- 150000002816 nickel compounds Chemical class 0.000 claims description 10
- 238000002309 gasification Methods 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 claims description 4
- 125000003342 alkenyl group Chemical group 0.000 claims 1
- 230000008676 import Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 8
- 239000007787 solid Substances 0.000 abstract description 4
- 239000007772 electrode material Substances 0.000 abstract description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 17
- -1 ethyl-cyclopentadienyl Chemical group 0.000 description 16
- 238000005755 formation reaction Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000005266 casting Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 4
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000706 filtrate Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical class CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 0 CC1(C(*)C(*)C(*)C1*)C1CCCCCCCC1 Chemical compound CC1(C(*)C(*)C(*)C1*)C1CCCCCCCC1 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- NQLVCAVEDIGMMW-UHFFFAOYSA-N cyclopenta-1,3-diene;cyclopentane;nickel Chemical compound [Ni].C=1C=C[CH-]C=1.[CH-]1[CH-][CH-][CH-][CH-]1 NQLVCAVEDIGMMW-UHFFFAOYSA-N 0.000 description 2
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910001629 magnesium chloride Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005292 vacuum distillation Methods 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000007707 calorimetry Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 125000001162 cycloheptenyl group Chemical group C1(=CCCCCC1)* 0.000 description 1
- URYYVOIYTNXXBN-UPHRSURJSA-N cyclooctene Chemical compound C1CCC\C=C/CC1 URYYVOIYTNXXBN-UPHRSURJSA-N 0.000 description 1
- 239000004913 cyclooctene Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- SNMVRZFUUCLYTO-UHFFFAOYSA-N n-propyl chloride Chemical compound CCCCl SNMVRZFUUCLYTO-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/04—Nickel compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013108030A JP5352024B1 (ja) | 2013-05-22 | 2013-05-22 | 有機ニッケル化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
| JP2013-108030 | 2013-05-22 | ||
| PCT/JP2013/085069 WO2014188629A1 (fr) | 2013-05-22 | 2013-12-27 | Matière première de dépôt chimique en phase vapeur comprenant un composé organique du nickel, et procédé de dépôt chimique en phase vapeur utilisant ladite matière première de dépôt chimique en phase vapeur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105247098A CN105247098A (zh) | 2016-01-13 |
| CN105247098B true CN105247098B (zh) | 2017-07-28 |
Family
ID=49764979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380076725.2A Active CN105247098B (zh) | 2013-05-22 | 2013-12-27 | 包含有机镍化合物的化学沉积用原料及使用该化学沉积用原料的化学沉积法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9447495B2 (fr) |
| EP (1) | EP3000912A4 (fr) |
| JP (1) | JP5352024B1 (fr) |
| KR (2) | KR20150009905A (fr) |
| CN (1) | CN105247098B (fr) |
| TW (1) | TWI526561B (fr) |
| WO (1) | WO2014188629A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5770806B2 (ja) * | 2013-10-02 | 2015-08-26 | 田中貴金属工業株式会社 | 化学蒸着法によるＳｉ基板上へのニッケル薄膜、及び、Ｓｉ基板上へのＮｉシリサイド薄膜の製造方法 |
| US20180175290A1 (en) * | 2016-12-19 | 2018-06-21 | Arm Ltd. | Forming nucleation layers in correlated electron material devices |
| JP6954776B2 (ja) * | 2017-06-29 | 2021-10-27 | 株式会社Adeka | 薄膜形成用原料及び薄膜の製造方法 |
| JP6589112B2 (ja) | 2017-10-19 | 2019-10-16 | 株式会社村田製作所 | シクロペンタジエニルニッケル錯体化合物 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3121729A (en) * | 1959-07-03 | 1964-02-18 | Union Carbide Corp | Cyclopentadienyl-nickel-cyclopentenyl compounds and processes therefor |
| DE3510982A1 (de) * | 1985-03-22 | 1986-09-25 | Schering AG, Berlin und Bergkamen, 1000 Berlin | Herstellung metallischer strukturen auf nichtleitern |
| JP4581119B2 (ja) | 2003-09-17 | 2010-11-17 | 株式会社トリケミカル研究所 | ＮｉＳｉ膜形成材料およびＮｉＳｉ膜形成方法 |
| JP4353371B2 (ja) * | 2004-08-06 | 2009-10-28 | 株式会社トリケミカル研究所 | 膜形成方法 |
| KR20100099322A (ko) * | 2007-12-25 | 2010-09-10 | 쇼와 덴코 가부시키가이샤 | 니켈 함유 막 형성 재료 및 그 제조 방법 |
| WO2010032673A1 (fr) * | 2008-09-22 | 2010-03-25 | 昭和電工株式会社 | Matériau de formation d’un film contenant du nickel et procédé de fabrication d’un film contenant du nickel |
-
2013
- 2013-05-22 JP JP2013108030A patent/JP5352024B1/ja active Active
- 2013-10-18 KR KR20130124411A patent/KR20150009905A/ko active Application Filing
- 2013-12-27 EP EP13885283.5A patent/EP3000912A4/fr not_active Withdrawn
- 2013-12-27 US US14/890,485 patent/US9447495B2/en active Active
- 2013-12-27 WO PCT/JP2013/085069 patent/WO2014188629A1/fr active Application Filing
- 2013-12-27 CN CN201380076725.2A patent/CN105247098B/zh active Active
-
2014
- 2014-04-30 TW TW103115491A patent/TWI526561B/zh active
-
2015
- 2015-01-22 KR KR20150010629A patent/KR20150022950A/ko active Search and Examination
Also Published As
| Publication number | Publication date |
|---|---|
| JP5352024B1 (ja) | 2013-11-27 |
| US20160115587A1 (en) | 2016-04-28 |
| KR20150009905A (ko) | 2015-01-27 |
| TW201446993A (zh) | 2014-12-16 |
| KR20150022950A (ko) | 2015-03-04 |
| JP2014227373A (ja) | 2014-12-08 |
| TWI526561B (zh) | 2016-03-21 |
| WO2014188629A1 (fr) | 2014-11-27 |
| US9447495B2 (en) | 2016-09-20 |
| EP3000912A4 (fr) | 2017-01-25 |
| EP3000912A1 (fr) | 2016-03-30 |
| CN105247098A (zh) | 2016-01-13 |
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