CN105144392A - 利用再生长氮化镓层制造混合的pn结与肖特基二极管的方法 - Google Patents
利用再生长氮化镓层制造混合的pn结与肖特基二极管的方法 Download PDFInfo
- Publication number
- CN105144392A CN105144392A CN201480021877.7A CN201480021877A CN105144392A CN 105144392 A CN105144392 A CN 105144392A CN 201480021877 A CN201480021877 A CN 201480021877A CN 105144392 A CN105144392 A CN 105144392A
- Authority
- CN
- China
- Prior art keywords
- type
- epitaxial loayer
- group iii
- nitride
- mps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000002019 doping agent Substances 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 48
- 230000008859 change Effects 0.000 description 19
- 230000008901 benefit Effects 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001657 homoepitaxy Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66121—Multilayer diodes, e.g. PNPN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/866,286 | 2013-04-19 | ||
US13/866,286 US9159799B2 (en) | 2013-04-19 | 2013-04-19 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer |
PCT/US2014/033514 WO2014172164A2 (en) | 2013-04-19 | 2014-04-09 | Method of fabricating a merged p-n junction and schottky diode with regrown gallium nitride layer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105144392A true CN105144392A (zh) | 2015-12-09 |
CN105144392B CN105144392B (zh) | 2019-05-17 |
Family
ID=51728352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480021877.7A Active CN105144392B (zh) | 2013-04-19 | 2014-04-09 | 利用再生长氮化镓层制造混合的pn结与肖特基二极管的方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9159799B2 (zh) |
CN (1) | CN105144392B (zh) |
WO (1) | WO2014172164A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108231911A (zh) * | 2017-11-24 | 2018-06-29 | 西安电子科技大学 | 基于渐变漂移区的耐高压GaN基JBS二极管及其制作方法 |
CN110729351A (zh) * | 2019-10-18 | 2020-01-24 | 西安电子科技大学 | 大功率阴阳极环形叉指GaN准垂直pn结二极管及制备方法 |
CN114335146A (zh) * | 2021-12-31 | 2022-04-12 | 清纯半导体(上海)有限公司 | 一种半导体结构及其制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018118220A1 (en) * | 2016-12-23 | 2018-06-28 | Sixpoint Materials, Inc. | Electronic device using group iii nitride semiconductor and its fabrication method |
JP7279587B2 (ja) * | 2018-09-25 | 2023-05-23 | 豊田合成株式会社 | 半導体装置の製造方法 |
US10964749B2 (en) * | 2018-11-01 | 2021-03-30 | Arizona Board Of Regents On Behalf Of Arizona State University | GaN-based threshold switching device and memory diode |
US11626483B2 (en) | 2019-10-08 | 2023-04-11 | Arizona Board Of Regents On Behalf Of Arizona State University | Low-leakage regrown GaN p-n junctions for GaN power devices |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1112731A (zh) * | 1993-11-29 | 1995-11-29 | 德克萨斯仪器股份有限公司 | 外延向上生长方法和器件 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6097046A (en) * | 1993-04-30 | 2000-08-01 | Texas Instruments Incorporated | Vertical field effect transistor and diode |
SE9704149D0 (sv) * | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
JP4160752B2 (ja) * | 1999-09-22 | 2008-10-08 | サイスド エレクトロニクス デヴェロプメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニ コマンディートゲゼルシャフト | 炭化珪素からなる半導体装置とその製造方法 |
JP4234016B2 (ja) * | 2001-07-12 | 2009-03-04 | ミシシッピ・ステイト・ユニバーシティ | 選択的エピタキシの使用による、炭化ケイ素におけるセルフアライントランジスタ |
US20070228505A1 (en) * | 2006-04-04 | 2007-10-04 | Mazzola Michael S | Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making |
US20090179297A1 (en) * | 2008-01-16 | 2009-07-16 | Northrop Grumman Systems Corporation | Junction barrier schottky diode with highly-doped channel region and methods |
EP2154726A3 (en) * | 2008-08-14 | 2010-05-26 | Acreo AB | A method for producing a JBS diode |
US9318623B2 (en) * | 2011-04-05 | 2016-04-19 | Cree, Inc. | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
US8946788B2 (en) * | 2011-08-04 | 2015-02-03 | Avogy, Inc. | Method and system for doping control in gallium nitride based devices |
US9224828B2 (en) * | 2011-10-11 | 2015-12-29 | Avogy, Inc. | Method and system for floating guard rings in gallium nitride materials |
-
2013
- 2013-04-19 US US13/866,286 patent/US9159799B2/en active Active
-
2014
- 2014-04-09 CN CN201480021877.7A patent/CN105144392B/zh active Active
- 2014-04-09 WO PCT/US2014/033514 patent/WO2014172164A2/en active Application Filing
-
2015
- 2015-09-14 US US14/853,930 patent/US9525039B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1112731A (zh) * | 1993-11-29 | 1995-11-29 | 德克萨斯仪器股份有限公司 | 外延向上生长方法和器件 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108231911A (zh) * | 2017-11-24 | 2018-06-29 | 西安电子科技大学 | 基于渐变漂移区的耐高压GaN基JBS二极管及其制作方法 |
CN108231911B (zh) * | 2017-11-24 | 2020-08-04 | 西安电子科技大学 | 基于渐变漂移区的耐高压GaN基JBS二极管及其制作方法 |
CN110729351A (zh) * | 2019-10-18 | 2020-01-24 | 西安电子科技大学 | 大功率阴阳极环形叉指GaN准垂直pn结二极管及制备方法 |
CN110729351B (zh) * | 2019-10-18 | 2021-07-20 | 西安电子科技大学 | 大功率阴阳极环形叉指GaN准垂直pn结二极管及制备方法 |
CN114335146A (zh) * | 2021-12-31 | 2022-04-12 | 清纯半导体(上海)有限公司 | 一种半导体结构及其制备方法 |
CN114335146B (zh) * | 2021-12-31 | 2024-04-26 | 清纯半导体(宁波)有限公司 | 一种半导体结构及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US9159799B2 (en) | 2015-10-13 |
CN105144392B (zh) | 2019-05-17 |
US9525039B2 (en) | 2016-12-20 |
US20140312355A1 (en) | 2014-10-23 |
WO2014172164A3 (en) | 2015-05-14 |
US20160005835A1 (en) | 2016-01-07 |
WO2014172164A2 (en) | 2014-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9196679B2 (en) | Schottky diode with buried layer in GaN materials | |
JP5011069B2 (ja) | 小さな寄生抵抗を有する低電圧ダイオードおよび製造方法 | |
US9397186B2 (en) | Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back | |
CN105144392A (zh) | 利用再生长氮化镓层制造混合的pn结与肖特基二极管的方法 | |
CN104094417A (zh) | 利用注入制造氮化镓p-i-n二极管的方法 | |
WO2013020061A1 (en) | Method and system for a gan vertical jfet utilizing a regrown gate | |
US9502544B2 (en) | Method and system for planar regrowth in GaN electronic devices | |
US9608092B2 (en) | Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench | |
WO2013020051A1 (en) | Method and system for a gan vertical jfet utilizing a regrown channel | |
CN104380458A (zh) | 利用电导调制在氮化镓材料中用于结终端的方法和系统 | |
CN104541373A (zh) | 用于使用工程化衬底的氮化镓电子器件的方法和系统 | |
US9171923B2 (en) | Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode | |
US9029210B2 (en) | GaN vertical superjunction device structures and fabrication methods | |
US8969926B2 (en) | Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance | |
KR101590477B1 (ko) | 경사 이온 주입을 이용한 실리콘 카바이드 쇼트키 다이오드 및 그의 제조 방법 | |
US20230369445A1 (en) | Vertical power devices having mesas and etched trenches therebetween |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181227 Address after: California, USA Applicant after: New Era Power System Co.,Ltd. Address before: California, USA Applicant before: Avoji (ABC) Co.,Ltd. Effective date of registration: 20181227 Address after: California, USA Applicant after: Avoji (ABC) Co.,Ltd. Address before: California, USA Applicant before: AVOGY, Inc. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant |