CN105116651B - Boa型液晶面板 - Google Patents

Boa型液晶面板 Download PDF

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CN105116651B
CN105116651B CN201510552015.3A CN201510552015A CN105116651B CN 105116651 B CN105116651 B CN 105116651B CN 201510552015 A CN201510552015 A CN 201510552015A CN 105116651 B CN105116651 B CN 105116651B
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liquid crystal
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CN105116651A (zh
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叶成亮
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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Abstract

本发明提供一种BOA型液晶面板，色阻层与黑色矩阵均设于第二基板上，色阻层中相邻两色阻块的边缘相互叠加以起到遮光的效果，并在此基础上再覆盖一层黑色矩阵，实现双层的遮蔽，有效避免了BOA型液晶面板应用于曲面显示时由于数据线与遮光线之间露出缝隙而导致的漏光现象，同时缩短了遮光线的宽度，提高了BOA型液晶面板的开口率，降低了背光的成本。

Description

BOA型液晶面板
技术领域
本发明涉及显示技术领域，尤其涉及一种BOA型液晶面板。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。
通常液晶显示装置包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组(Backlight module)，其中，液晶面板的结构主要是由一薄膜晶体管阵列基板(Thin FilmTransistor Array Substrate，TFT Array Substrate)、一彩色滤光片基板(Color FilterSubstrate，CF Substrate)、以及配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
请参阅图1至图2，为现有的液晶面板在弯曲状态下的示意图，该液晶面板包括CF基板100、TFT基板200、及位于CF基板100与TFT基板200之间的液晶层300。所述CF基板100包括第一基板110、及设于所述第一基板110上的色阻层120与黑色矩阵(Black Matrix，BM)130。所述TFT基板200包括第二基板210、遮光线(Shielding Line)220、及数据线(DataLine)230。正常情况下，黑色矩阵130可遮盖所述遮光线220与数据线230之间的缝隙以防止漏光。当该液晶面板应用于曲面显示时，由于TFT基板200与CF基板100的曲率半径的差异，导致CF基板100上的黑色矩阵130与TFT基板200的膜层之间发生相对位置偏移，从而会导致曲面液晶面板产生漏光等现象，同时也会损失一部分开口率。
为了提高液晶面板的开口率，降低生产成本，人们提出一种彩色滤光片贴覆于阵列基板(Color filter On Array，COA)技术，即将CF基板一侧的RGB色阻转移到阵列基板上来制作，原CF基板仅保留黑色矩阵、公共电极以及隔垫物(Photo Spacer，PS)。
请参阅图3至图4，为现有的COA型液晶面板的剖面结构示意图，其中色阻层250’设于下基板200’上。如图3所示，上基板100’中的黑色矩阵130’完全遮盖下基板200’上的数据线240’与遮光线220’之间的缝隙，同时还多遮盖出遮光线220’一部分。黑色矩阵130’在水平方向上多遮盖出遮光线220’的距离为1-2μm，在图3的COA型液晶面板中具体为1.35μm，可防止上、下基板100’、200’对位偏差导致缝隙露出而漏光的问题。但是如果将该COA型液晶面板应用于曲面显示，则黑色矩阵130’错位的距离会大于之前黑色矩阵130’所遮蔽的距离，依然可能导致漏光的产生。因此，如图4所示，需要对图3的COA型液晶面板进行改善，将黑色矩阵130’多遮盖出遮光线220’的距离增加6-7μm左右，在图4的COA型液晶面板中具体为7μm，这样虽然避免了漏光的发生，但同时也导致开口率的降低。
为了避免液晶面板应用于曲面显示时产生漏光现象的同时，保证液晶面板的开口率，人们提出一种黑色矩阵贴附于阵列基板(BM On Array，BOA)技术，即将黑色矩阵也制作于阵列基板上，这样就可以解决目前曲面液晶面板面临的面板弯折后所带来的漏光、串扰等不良影响，同时可保证液晶面板的开口率。
请参阅图5，为一种现有的BOA型液晶面板的剖面结构示意图，其中色阻层250”和黑色矩阵260”均设于下基板200”上，上基板100”中只留下公共电极120”。黑色矩阵260”完全遮盖数据线240”与遮光线220”之间的缝隙，并且因为曝光机台本身的对位偏差最大为3μm，所以黑色矩阵260”还应至少遮盖住遮光线220”3μm的距离，以防止机台对位偏差导致数据线240”与遮光线220”之间的缝隙露出。此外，为了防止黑色矩阵260”偏差导致地形起伏影响像素内部液晶倾倒而产生的暗纹风险，黑色矩阵260”与像素电极270”之间的间隔距离为3μm，同时像素电极270”在水平方向遮盖住遮光线220”的距离为2μm，总体算下来，遮光线220”的宽度为8μm，相比于普通COA型液晶面板节约了开口率。
然而，由于图5所示的BOA型液晶面板中的遮光线220”的宽度较大，在一定程度上影响了开口率，因此有必要提供一种新型的BOA型液晶面板，以进一步提高液晶面板的开口率。
发明内容
本发明的目的在于提供一种BOA型液晶面板，可避免液晶面板应用于曲面显示时的漏光现象的产生，同时具有较高的开口率。
为实现上述目的，本发明提供一种BOA型液晶面板，包括上基板、与所述上基板相对设置的下基板、及位于所述上基板与下基板之间的液晶层；
所述上基板包括第一基板、及设于所述第一基板上的公共电极；
所述下基板包括第二基板、遮光线、数据线、覆盖所述数据线的色阻层、设于所述色阻层上的黑色矩阵、及像素电极；
所述色阻层包括依次设置的红色色阻块、绿色色阻块、及蓝色色阻块，相邻两色阻块的边缘相互叠加，所述数据线位于相邻两色阻块的相交处；所述数据线与遮光线在水平方向上相间隔，所述黑色矩阵完全遮盖所述数据线与遮光线之间的缝隙并遮盖部分遮光线。
所述黑色矩阵在水平方向上遮盖所述遮光线的距离为1.5μm。
所述像素电极与所述黑色矩阵在水平方向上相间隔。
所述黑色矩阵与所述像素电极在水平方向的距离为3μm。
所述遮光线在水平方向上位于所述黑色矩阵与像素电极间的缝隙处。
所述像素电极遮盖部分遮光线。
所述像素电极在水平方向上遮盖所述遮光线的距离为2μm。
所述遮光线的宽度为6.5μm。
所述第一基板、第二基板为玻璃基板。
所述公共电极、像素电极的材料为ITO。
本发明的有益效果：本发明的BOA型液晶面板，色阻层与黑色矩阵均设于第二基板上，色阻层中相邻两色阻块的边缘相互叠加以起到遮光的效果，并在此基础上再覆盖一层黑色矩阵，实现双层的遮蔽，有效避免了BOA型液晶面板应用于曲面显示时由于数据线与遮光线之间露出缝隙而导致的漏光现象，同时缩短了遮光线的宽度，提高了BOA型液晶面板的开口率，降低了背光的成本。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为一种现有的液晶面板应用于曲面显示时的剖面结构示意图；
图2为图1的液晶面板应用于曲面显示时的局部剖面结构示意图；
图3为一种现有的COA型液晶面板的剖面结构示意图；
图4为图3的COA型液晶面板改善后的剖面结构示意图；
图5为一种现有的BOA型液晶面板的剖面结构示意图；
图6为本发明的BOA型液晶面板的剖面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图6，本发明提供一种BOA型液晶面板，包括上基板1、与所述上基板1相对设置的下基板2、及位于所述上基板1与下基板2之间的液晶层(未图示)。
具体地，所述上基板1包括第一基板11、及设于所述第一基板11上的公共电极12。
具体地，所述下基板2包括第二基板21、遮光线22、数据线24、覆盖所述数据线24的色阻层25、设于所述色阻层25上的黑色矩阵26、及像素电极27。
具体地，所述色阻层25包括依次设置的红色色阻块、绿色色阻块、及蓝色色阻块，相邻两色阻块的边缘相互叠加，所述数据线24位于相邻两色阻块的相交处；所述数据线24与遮光线22在水平方向上相间隔，所述黑色矩阵26完全遮盖所述数据线24与遮光线22之间的缝隙并遮盖部分遮光线22。本发明的BOA型液晶面板，使色阻层中相邻两色阻块的边缘相互叠加，以起到遮光的效果，并在此基础上，再覆盖一层黑色矩阵26，通过双层的遮蔽，可使所述数据线24与遮光线22之间的缝隙露出的概率降低50％。
具体的，相邻两色阻块的叠加区域的边缘与黑色矩阵26的边缘相对应。
具体地，所述黑色矩阵26在水平方向上遮盖所述遮光线22的距离为1.5μm，以防止机台对位偏差导致数据线24与遮光线22之间的缝隙露出而导致的漏光。由于在制作黑色矩阵26之前，所述下基板2上已经有相邻色阻块的叠加区域对遮光线22进行遮盖，因此在设计黑色矩阵26在水平方向上遮盖所述遮光线22的距离时，可以减少考虑机台对位偏差而设置的部分，即将黑色矩阵26在水平方向上遮盖所述遮光线22的距离从3μm缩短为1.5μm，进而将所述遮光线22的宽度缩短1.5μm，并且将所述像素电极27向黑色矩阵26的方向偏移1.5μm，从而提高了BOA型液晶面板的开口率。
具体地，所述遮光线22的宽度为6.5μm，与图5所示的现有的BOA型液晶面板相比，遮光线22的宽度由8μm缩短至6.5μm，有效提高了BOA型液晶面板的开口率。
具体地，所述像素电极27与所述黑色矩阵26在水平方向上相间隔，可以防止黑色矩阵26偏差导致地形起伏影响像素内部液晶倾倒而产生的暗纹风险。具体地，所述黑色矩阵26与所述像素电极27在水平方向的距离为3μm。
具体地，所述遮光线22在水平方向上位于所述黑色矩阵26与像素电极27间的缝隙处，所述像素电极27遮盖部分遮光线22，所述遮光线22用于遮挡由背光源射出的光线，并且可以降低数据线24与像素电极27之间的电容，从而减少数据线24与像素电极27之间的电压干扰。具体地，所述像素电极27在水平方向上遮盖所述遮光线22的距离为2μm。
具体地，所述第一基板11、第二基板12为玻璃基板。
具体地，所述公共电极12、像素电极27的材料为ITO(氧化铟锡)。
综上所述，本发明的BOA型液晶面板，色阻层与黑色矩阵均设于第二基板上，色阻层中相邻两色阻块的边缘相互叠加以起到遮光的效果，并在此基础上再覆盖一层黑色矩阵，实现双层的遮蔽，有效避免了BOA型液晶面板应用于曲面显示时由于数据线与遮光线之间露出缝隙而导致的漏光现象，同时缩短了遮光线的宽度，提高了BOA型液晶面板的开口率，降低了背光的成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种BOA型液晶面板，其特征在于，包括上基板(1)、与所述上基板(1)相对设置的下基板(2)、及位于所述上基板(1)与下基板(2)之间的液晶层；
所述上基板(1)包括第一基板(11)、及设于所述第一基板(11)上的公共电极(12)；
所述下基板(2)包括第二基板(21)、遮光线(22)、数据线(24)、覆盖所述数据线(24)的色阻层(25)、设于所述色阻层(25)上的黑色矩阵(26)、及像素电极(27)；
所述色阻层(25)包括依次设置的红色色阻块、绿色色阻块、及蓝色色阻块，相邻两色阻块的边缘相互叠加，相邻两色阻块的叠加区域的边缘与所述黑色矩阵(26)的边缘相对应；所述数据线(24)位于相邻两色阻块的相交处；所述数据线(24)与遮光线(22)在水平方向上相间隔，所述黑色矩阵(26)完全遮盖所述数据线(24)与遮光线(22)之间的缝隙并遮盖部分遮光线(22)。
2.如权利要求1所述的BOA型液晶面板，其特征在于，所述黑色矩阵(26)在水平方向上遮盖所述遮光线(22)的距离为1.5μm。
3.如权利要求1所述的BOA型液晶面板，其特征在于，所述像素电极(27)与所述黑色矩阵(26)在水平方向上相间隔。
4.如权利要求3所述的BOA型液晶面板，其特征在于，所述黑色矩阵(26)与所述像素电极(27)在水平方向的距离为3μm。
5.如权利要求3所述的BOA型液晶面板，其特征在于，所述遮光线(22)在水平方向上位于所述黑色矩阵(26)与像素电极(27)间的缝隙处。
6.如权利要求1所述的BOA型液晶面板，其特征在于，所述像素电极(27)遮盖部分遮光线(22)。
7.如权利要求6所述的BOA型液晶面板，其特征在于，所述像素电极(27)在水平方向上遮盖所述遮光线(22)的距离为2μm。
8.如权利要求1所述的BOA型液晶面板，其特征在于，所述遮光线(22)的宽度为6.5μm。
9.如权利要求1所述的BOA型液晶面板，其特征在于，所述第一基板(11)、第二基板(12)为玻璃基板。
10.如权利要求1所述的BOA型液晶面板，其特征在于，所述公共电极(12)、像素电极(27)的材料为ITO。
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