CN105097825A - 显示装置 - Google Patents
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- CN105097825A CN105097825A CN201410333265.3A CN201410333265A CN105097825A CN 105097825 A CN105097825 A CN 105097825A CN 201410333265 A CN201410333265 A CN 201410333265A CN 105097825 A CN105097825 A CN 105097825A
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
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Classifications
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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Abstract
本发明有关于一种显示装置,包括:一第一基板;一第一绝缘层,设置于第一基板上;一第二绝缘层,设置于第一绝缘层上;以及一图案化金属层,设置于第二绝缘层上且包括多条线路,且相邻两线路间设有一显露第二绝缘层的开口区;其中,线路下方的第二绝缘层厚度大于开口区所显露的第二绝缘层厚度。
Description
技术领域
本发明关于一种显示装置,尤指一种可降低传导阻抗、减少漏电流、提高电容值及增加画素储存电容的显示装置。
背景技术
随着显示器技术不断进步,所有的显示装置均朝体积小、厚度薄、重量轻等趋势发展,故目前市面上主流的显示器装置已由以往的阴极射线管发展成平面显示器,如液晶显示装置或有机发光二极管显示装置等。其中,液晶显示装置或有机发光二极管显示装置可应用的领域相当多,举凡日常生活中使用的手机、笔记型计算机、摄影机、照相机、音乐播放器、行动导航装置、电视等显示装置,大多数均使用该些显示面板。
虽然液晶显示装置或有机发光二极管显示装置已为市面上常见的显示装置,特别是液晶显示装置的技术更是相当成熟,但随着显示装置不断发展且消费者对显示装置的显示质量要求日趋提高,各家厂商无不极力发展出具有更高显示质量的显示装置。尤其是,有机发光二极管装置更是目前各家厂商发展的重点项目之一。
有鉴于此,即便目前液晶显示装置或有机发光二极管显示装置,仍需发展出具有更佳显示质量的显示装置,以符合消费者需求。
发明内容
本发明的主要目的在于提供一种显示装置,能同时达到可降低传导阻抗、减少漏电流、提高电容值及增加画素储存电容等目的。
为达成上述目的,本发明提供一种显示装置,包括:一第一基板;一第一绝缘层,设置于第一基板上;一第二绝缘层,设置于第一绝缘层上;以及一金属层,设置于第二绝缘层上且包括多条线路,且相邻两线路间设有一显露该第二绝缘层的开口区;其中,金属层下方的第二绝缘层厚度大于开口区所显露的第二绝缘层厚度。更具体而言,本发明的金属层为一图案化金属层,且金属层(特别是,金属层的线路)下方的第二绝缘层厚度大于开口区所显露的第二绝缘层厚度。
换言之,本发明所提供的显示装置,包括:一第一基板;一第一绝缘层,设置于第一基板上;一第二绝缘层,设置于第一绝缘层上;以及一金属层,部分覆盖第二绝缘层;其中,金属层下方(即,经金属层覆盖)的第二绝缘层厚度大于非金属层下方(即,未经金属层覆盖)的第二绝缘层厚度。
于本发明所提供的显示装置中,透过将经金属层覆盖的第二绝缘层厚度加厚,而可达到降低传导阻抗,并使漏电流减小的目的;同时,还透过将开口区所显露的未经金属层覆盖的第二绝缘层厚度减薄,而可达到提高电容值,并增加画素的储存电容的目的。
于本发明的显示装置中,开口区所显露的第二绝缘层(即,非金属层下方的第二绝缘层)厚度小于金属层(特别是,金属层的线路)下方的第二绝缘层厚度。较佳为,开口区所显露的第二绝缘层厚度比金属层下方的第二绝缘层厚度小约10%到95%;更佳为20%到80%;且最佳为65%到75%。
此外,于本发明的显示装置中,第一绝缘层及第二绝缘层可为本技术领域常用的介电层材料,如氧化硅及氮化硅等。较佳为,第一绝缘层为一氧化硅层;及/或第二绝缘层为一氮化硅层。
再者,于本发明的显示装置中,层叠于第二绝缘层下方的第一绝缘层会有一侧蚀现象。更具体而言,若第一绝缘层具有一第一侧壁,第二绝缘层具有一第二侧壁,则第二侧壁突出于第一侧壁。
于本发明的显示装置中,第一基板上可还设有一封装胶,其中图案化金属层下方的第二绝缘层厚度大于封装胶下方的第二绝缘层厚度。在此,封装胶的材料可依照显示装置类型而定;若本发明的显示装置为一液晶显示装置,则封装胶可采用此技术领域常用的框胶;且若本发明的显示装置为一有机发光二极管显示装置,则封装胶可采用此技术领域常用的可达到高阻水性及气密性的玻璃胶。
本发明的显示装置可应用于有机发光二极管显示装置或液晶显示装置。当本发明的显示装置为一有机发光二极管显示装置,则可还包括一平坦层,设于金属层(特别是,图案化金属层的线路)上及未经金属层覆盖的开口区中。此外,于此情形下,本发明的显示装置可还包括一有机发光二极管单元,其中有机发光二极管单元包括一第一电极、一第二电极、以及夹置于第一电极及第二电极间的一有机发光层,且金属层(即,图案化金属层的线路)与第一电极电性连接。
另一方面,当本发明的显示装置为一液晶显示装置,则可还包括一液晶显示单元,其中液晶显示单元包括一第一电极、一第二电极、以及夹置于第一电极及第二电极间的一液晶层,且金属层(即,图案化金属层的线路)与第一电极电性连接。
附图说明
图1是本发明实施例1的有机发光二极管显示装置剖面示意图。
图2是本发明实施例1的有机发光二极管显示装置的电路布线示意图。
图3是本发明实施例1的有机发光二极管显示装置的部分显示区剖面示意图。
图4A及图4B是分别为本发明实施例1的有机发光二极管显示装置的部分显示区剖面示意图。
图5是本发明实施例1的有机发光二极管显示装置的部分非显示区示意图。
图6是本发明实施例1的有机发光二极管显示装置的沿图5的P-P’剖面线的剖面示意图。
图7是本发明实施例1的有机发光二极管显示装置的图3的区域E的放大图。
图8是本发明实施例1的有机发光二极管显示装置的图1封装胶区域的剖面示意图。
图9是本发明实施例2的液晶显示装置剖面示意图。
图10是本发明实施例2的液晶显示装置的部分显示区剖面示意图。
【符号说明】
101氮化硅缓冲层102氧化硅缓冲层
103多晶硅层104氧化硅绝缘层
11第一基板111第一金属层
111’钼金属层112栅极绝缘层
113半导体层114第一绝缘层
114a第一侧壁115第二绝缘层
115a第二侧壁116第二金属层
116a开口区117平坦层
117a平坦层开口118保护层
118a保护层开口12第二基板
13封装胶14支撑元件
15有机发光二极管单元151第一电极
152有机发光层153第二电极
16画素界定层161画素开口
17间隔物18液晶显示单元
181液晶层24薄膜晶体管单元
25储存电极A显示区
B非显示区E区域
R1连接区域T薄膜晶体管元件区
T1,T2厚度P-P’,Q-Q’剖面线
具体实施方式
以下是通过特定的具体实施例说明本发明的实施方式,熟悉此技艺的人士可由本说明书所揭示的内容轻易地了解本发明的其它优点与功效。本发明亦可通过其它不同的具体实施例加以施行或应用,本说明书中的各项细节亦可针对不同观点与应用,在不悖离本创作的精神下进行各种修饰与变更。
实施例1
图1是本实施例的有机发光二极管显示装置剖面示意图。于有机发光二极管显示装置的制作过程中,先提供一第一基板11及一第二基板12。其中,第一基板11上设置有一有机发光二极管单元11及一画素界定层16,其中每一画素界定层16设于两相邻的有机发光二极管单元15间。同时,第二基板12上则设置有多个支撑元件14,并于第二基板12的边缘先形成有一封装胶13(于本实施例中,为一玻璃胶),且封装胶13透过点胶及加热烧结制程接合于第二基板12上。接着,将第一基板11及第二基板12进行对组,其中第二基板12上的支撑元件14对应于画素界定层16的未形成有画素开口161的区域。而后,以激光加热的方式,使封装胶13与第一基板11进行接合,而制得本实施例的上发光有机发光二极管显示装置。
于本实施例中,第一基板11及第二基板12均为玻璃基板。此外,本实施例的有机发光二极管显示面板包括一显示区A及一非显示区B,而所谓的非显示区B即走线分布的区域。再者,于本实施例中,每一有机发光二极管单元15可分别发出红光、绿光及蓝光,但其它实施例并不仅限于此;举例来说,有机发光二极管单元15可为一白光有机发光二极管单元,于此情形下,第二基板12还需设置一彩色滤光元件(图未示)。
图2是本实施例的有机发光二极管显示装置的一画素单元的电路布线示意图。如图2所示,于本实施例的有机发光二极管显示装置中,每一画素单元分别包括:一扫描线、一数据线、一电容线、一电源供给线、一开关薄膜晶体管元件(如图2的开关TFT所示)、一驱动薄膜晶体管元件(如图2的驱动TFT所示)、一储存电容、及一分别与第一电极及第二电极连接的有机发光二极管元件(如图2的OLED所示)。
图3是本实施例的有机发光二极管显示装置的部分显示区剖面示意图。请同时参照图1及图3,本实施例的有机发光二极管显示装置包括:一第一基板11及一与第一基板11相对设置的第二基板12。于本实施例中,有机发光二极管显示装置的薄膜晶体管元件是使用低温多晶硅薄膜晶体管。如图3所示,于显示区A中,首先,提供一第一基板11,其上方依序设置有一氮化硅缓冲层101及一氧化硅缓冲层102,且于薄膜晶体管元件区T中,氧化硅缓冲层102上还形成有一由非晶硅激光退火后所形成的多晶硅层103。接着,于第一基板11上依序形成一氧化硅绝缘层104、一第一金属层11、一栅极绝缘层112、及一钼金属层111’。其中,位于薄膜晶体管元件区T中的第一金属层11作为一栅极;而栅极绝缘层112的材料为本技术领域常用的绝缘层材料,如氧化硅。而后,再于栅极绝缘层112及一钼金属层111’上依序层叠一第一绝缘层114、一第二绝缘层115及一第二金属层116。其中,位于薄膜晶体管元件区T中的第二金属层116还贯穿栅极绝缘层112、第一绝缘层114及第二绝缘层115以与多晶硅层103连接。最后,再依序形成平坦层117、一第一电极151及画素界定层16,其中第一电极151除了设置于平坦层117还设置于平坦层117的平坦层开口117a中以与第二金属层116电性连接,且画素界定层16还设有一画素开口161。
在此,第一金属层111及第二金属层116作为线路用。例如,如图3所示,第一金属层111在此是作为薄膜晶体管开关元件的栅极;而第二金属层116在此是作为薄膜晶体管开关元件的源极及漏极,且第二金属层116为一图案化金属层,其具有一开口区116a,以显露下方的第二绝缘层115;且同由第一金属层111所形成的栅极及扫描线彼此是电性连接,而同由第二金属层116所形成的源极/漏极及数据线彼此亦电性连接。此外,于本实施例中,第一金属层111、第二金属层116的材料可使用本技术领域常用的导电材料,如金属、合金、金属氧化物、金属氮氧化物、或其它本技术领域常用的电极材料;且较佳为金属材料。于本实施例中,第一金属层111为钼,而第二金属层116为从第一基板11上依序层叠有Ti层、Al层及Ti层的复合金属层。
除了如图3所示的低温多晶硅薄膜晶体管外,IGZO薄膜晶体管亦可用于本实施例的有机发光二极管显示装置中。图4A及图4B是分别为本实施例的有机发光二极管显示装置的薄膜晶体管元件区剖面示意图。如图4A所示,于第一基板11上方设置有一依序层叠有第一金属层111、栅极绝缘层112、半导体层113、第一绝缘层114、第二绝缘层115、及第二金属层116的薄膜晶体管元件;其中,第二金属层116是与半导体层113连接。此外,半导体层113的材料为IGZO,而第一金属层111及第二金属层116如前所述。而后,于第二金属层116上及其开口区116a中还层叠有一保护层118,其具有一保护层开口118a;并于保护层118层叠一平坦层117,其具有一平坦层开口117a。透过保护层开口118a及平坦层开口117a得以显露第二金属层116。
接着,如图4A所示,于平坦层117及平坦层开口117a中形成一第一电极151,再形成一具有画素开口161的画素界定层16。而后,于画素界定层16与第一电极151上及画素开口161中依序层叠一有机发光层152及一第二电极153,则完成本实施例的有机发光单元15,如图4B所示。据此,如图4B所示,本实施例的有机发光单元15包括依序层叠的一第一电极151、一有机发光层152及一第二电极153,且第一电极151是与第二金属层116电性连接。此外,画素界定层16是设于第一电极151与有机发光层152间,且透过画素界定层16的画素开口161以定义出光区域。
无论是如图3所示的低温多晶硅薄膜晶体管或是如图4A及4B所示的IGZO薄膜晶体管,于本实施例中,第一绝缘层114及第二绝缘层115可为本技术领域常用的介电层材料,如氧化硅及氮化硅等。于本实施例中,第一绝缘层114为一氧化硅层,而第二绝缘层115为一氮化硅层。
无论是如图3所示的低温多晶硅薄膜晶体管或是如图4A及图4B所示的IGZO薄膜晶体管,于本实施例中,第一电极151及第二电极153可选用本发明所属技术领域已知的透明电极或半透明电极。其中,透明电极可为透明氧化物电极(TCO电极),如ITO电极或IZO电极;而半透明电极可为一金属薄膜电极,如镁银合金薄膜电极、金薄膜电极、铂薄膜电极、铝薄膜电极等。此外,若需要,本发明的第一电极151及第二电极153的至少一者,可选用透明电极与半透明电极的复合电极,如:TCO电极与铂薄膜电极的复合电极。在此,仅以包含有第一电极151、有机发光层152及第二电极153的有机发光二极管元件作为举例,但本发明并不限于此;其它本技术领域常用的有机发光二极管元件均可应用于本发明的有机发光二极管显示面板中,例如:包括电子传输层、电子注入层、电洞传输层、电洞注入层、及其它可帮助电子电洞传输结合的层的有机发光二极管元件均可应用于本发明中。
图5是本实施例的有机发光二极管显示装置的部分非显示区示意图。请同时参照图1及图5,于非显示区B中,第一基板11上方依序层叠有第一金属层111、第一绝缘层(图未示)、第二绝缘层(图未示)及第二金属层116,在此第一金属层111及第二金属层116均作为走线,且第一金属层111与第二金属层116在连接区域R1彼此电性连接。
图6是本实施例的有机发光二极管显示装置的沿图5的P-P’剖面线的剖面示意图。如图6所示,第一金属层111设置于第一基板11上,第一绝缘层114设置于第一金属层111上,第二绝缘层115设置于第一绝缘层114上,而第二金属层116则设置于第二绝缘层115上;其中第二金属层116为一图案化金属层并包括线路,且相邻两线路间设有一显露第二绝缘层115的开口区116a(如图5及图6所示)。
此外,图7是本实施例的有机发光二极管显示装置的图3的区域E的放大图。如图7所示,被第二金属层116所覆盖的第二绝缘层115(即,第二金属层116的线路下方的第二绝缘层115)厚度T1大于开口区116a所显露的第二绝缘层115(即,未经第二金属层116覆盖的非第二金属层116下方的第二绝缘层115)厚度T2;较佳为,开口区116a所显露的第二绝缘层115厚度T2比被第二金属层116所覆盖的第二绝缘层115厚度T1小约10%到95%;更佳为,厚度T2比被厚度T1小约20%到80%;且最佳为,厚度T2比被厚度T1小约65%到75%。于本实施例中,厚度T2比被厚度T1小约70%,即厚度T2仅为厚度T1的30%。
在此,仅以本发明的有机发光二极管显示装置的部分区域描述第二绝缘层的厚度;然而,本技术领域者均了解,于其它有机发光二极管显示装置未描述的区域,亦有相同的第二绝缘层的厚度设计。
除此之外,如图6所示,层叠于第二绝缘层115下方的第一绝缘层114会有一侧蚀现象。更具体而言,若第一绝缘层114具有一第一侧壁114a,第二绝缘层115具有一第二侧壁115a,则第二侧壁115a突出于第一侧壁114a。
此外,如图1及图8所示,图8是图1封装胶13区域的剖面示意图,其中第一基板11上还设有一封装胶13。请同时参考图3、图4A~4B及图8,其中被第二金属层116所覆盖的第二绝缘层115厚度大于该封装胶113下方的该第二绝缘层厚度。
实施例2
如图9所示,其为实施例的液晶显示装置的示意图。于液晶显示装置的制作过程中,先提供一第一基板11及一第二基板12,其上方分别设有不同元件(图未示)。举例而言,于部分实施例中,第一基板11上方设有薄膜晶体管单元,而第二基板12上方则设有彩色滤光元件(如图10所示,其中彩色滤光元件未示于图中);而于部分实施例中,彩色滤光元件及薄膜晶体管单元则同时设于第一基板11。此外,第一基板11及一第二基板12的其中一者则设有多个间隔物17,并于第二基板12的边缘先形成有一封装胶13(于本实施例中,为一框胶)。将第一基板11及第二基板12进行对组后,再以如滴下式液晶注入制程、液晶吸入制程或其它本技术领域已知的液晶注入制程,注入液晶分子于第一基板11及第二基板12所形成的空间中,以形成一液晶层181,则可得到本实施例的液晶显示装置。
图10是本发明实施例2的液晶显示装置的部分显示区剖面示意图。如图10所示,于本实施例中,于第一基板11上方设置有一依序层叠有第一金属层111、栅极绝缘层112、第一绝缘层114、第二绝缘层115、半导体层113及第二金属层116的薄膜晶体管元件。此外,于第二金属层116上及其开口区116a中还层叠有一保护层118,而保护层118上还形成有一第一电极151,且第一电极151是与第二金属层116电性连接。在此,保护层118的材料可为本技术领域常用的如氧化硅的钝化层材料。再者,于本实施例中,第二绝缘层115与第二金属层16间的厚度关系亦与实施例1相同,故在此不再赘述。
此外,如图10所示,本实施例的液晶显示装置包括:一液晶显示单元18,其中液晶显示单元18包括一第一电极151、一第二电极153、以及夹置于第一电极151及第二电极153间的一液晶层181,且第二金属层116是与第一电极151电性连接。再者,于本实施例的液晶显示装置中,第二电极153设于第二基板12上;且第二基板12上还设有一彩色滤光元件(图未示)。
除此之外,本实施例的液晶显示装置可还包括一背光模块,设于第一基板11下方,以提供入射光至液晶层181。
综上所述,于本发明所提供的显示装置中,透过将经金属层(即,前述实施例所述的第二金属层)覆盖的第二绝缘层厚度加厚,而可达到降低传导阻抗,并使漏电流减小的目的;同时,还透过将开口区(即,前述实施例所述的未覆盖有第二金属层的开口区)所显露的第二绝缘层厚度减薄,而可达到提高电容值,并增加画素的储存电容的目的。由此,可提升显示装置的显示质量,以符合消费者对于电子产品的要求。
此外,本发明前述实施例所制得的显示装置,可应用于本技术领域已知的任何需要显示屏幕的电子装置上,如显示器、手机、笔记型计算机、摄影机、照相机、音乐播放器、行动导航装置、电视等。
上述实施例仅是为了方便说明而举例而已,本发明所主张的权利范围自应以申请专利范围所述为准,而非仅限于上述实施例。
Claims (18)
1.一种显示装置,其特征在于,包括:
一第一基板;
一第一绝缘层,设置于该第一基板上;
一第二绝缘层,设置于该第一绝缘层上;以及
一图案化金属层,设置于该第二绝缘层上且包括多条线路,且相邻两线路间设有一显露该第二绝缘层的开口区;
其中,所述线路下方的该第二绝缘层厚度大于该开口区所显露的该第二绝缘层厚度。
2.如权利要求1所述的显示装置,其特征在于,该开口区所显露的该第二绝缘层厚度比该图案化金属层下方的该第二绝缘层厚度小约10%到95%。
3.如权利要求1所述的显示装置,其特征在于,该第一绝缘层为一氧化硅层。
4.如权利要求1所述的显示装置,其特征在于,该第二绝缘层为一氮化硅层。
5.如权利要求1所述的显示装置,其特征在于,该第一绝缘层具有一第一侧壁,该第二绝缘层具有一第二侧壁,且该第二侧壁突出于该第一侧壁。
6.如权利要求1所述的显示装置,其特征在于,该第一基板上还设有一封装胶,其中该图案化金属层下方的该第二绝缘层厚度大于该封装胶下方的该第二绝缘层厚度。
7.如权利要求1所述的显示装置,其特征在于,该显示装置为一有机发光二极管显示装置。
8.如权利要求7所述的显示装置,其特征在于,还包括一平坦层,设于该图案化金属层及该开口区中。
9.如权利要求7所述的显示装置,其特征在于,还包括一有机发光二极管单元,其中该有机发光二极管单元包括一第一电极、一第二电极、以及夹置于该第一电极及该第二电极间的一有机发光层,且该图案化金属层与该第一电极电性连接。
10.如权利要求1所述的显示装置,其特征在于,该显示装置为一液晶显示装置。
11.如权利要求10所述的显示装置,其特征在于,还包括一液晶显示单元,其中该液晶显示单元包括一第一电极、一第二电极、以及夹置于该第一电极及该第二电极间的一液晶层,且该图案化金属层与该第一电极电性连接。
12.一种显示装置,其特征在于,包括:
一第一基板;
一第一绝缘层,设置于该第一基板上;
一第二绝缘层,设置于该第一绝缘层上;以及
一金属层,部分覆盖该第二绝缘层;
其中,该金属层下方的该第二绝缘层厚度大于非该金属层下方的该第二绝缘层厚度。
13.如权利要求12所述的显示装置,其特征在于,非金属层下方的该第二绝缘层厚度比该金属层下方的该第二绝缘层厚度小约10%到95%。
14.如权利要求12所述的显示装置,其特征在于,该第一绝缘层为一氧化硅层。
15.如权利要求12所述的显示装置,其特征在于,该第二绝缘层为一氮化硅层。
16.如权利要求12所述的显示装置,其特征在于,该第一绝缘层具有一第一侧壁,该第二绝缘层具有一第二侧壁,且该第二侧壁突出于该第一侧壁。
17.如权利要求12所述的显示装置,其特征在于,于该第一基板上还设有一封装胶,其中该金属层下方的该第二绝缘层厚度大于该封装胶下方的该第二绝缘层厚度。
18.如权利要求1所述的显示装置,其特征在于,该显示装置为一液晶显示装置或一有机发光二极管显示装置。
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EP (1) | EP2942814A1 (zh) |
JP (1) | JP3193995U (zh) |
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WO2020062902A1 (zh) * | 2018-09-30 | 2020-04-02 | 云谷(固安)科技有限公司 | 显示面板及其制备方法、显示装置 |
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Also Published As
Publication number | Publication date |
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KR20150127528A (ko) | 2015-11-17 |
JP3193995U (ja) | 2014-10-30 |
US20220216277A1 (en) | 2022-07-07 |
US20150325634A1 (en) | 2015-11-12 |
CN204179080U (zh) | 2015-02-25 |
EP2942814A1 (en) | 2015-11-11 |
US20200233273A1 (en) | 2020-07-23 |
US11665930B2 (en) | 2023-05-30 |
US10649290B2 (en) | 2020-05-12 |
US11315991B2 (en) | 2022-04-26 |
US20160307923A1 (en) | 2016-10-20 |
TWI553836B (zh) | 2016-10-11 |
TW201543652A (zh) | 2015-11-16 |
CN105097825B (zh) | 2019-03-08 |
US9406737B2 (en) | 2016-08-02 |
US20230255065A1 (en) | 2023-08-10 |
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