TWI553836B - 顯示裝置 - Google Patents
顯示裝置 Download PDFInfo
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- TWI553836B TWI553836B TW103116212A TW103116212A TWI553836B TW I553836 B TWI553836 B TW I553836B TW 103116212 A TW103116212 A TW 103116212A TW 103116212 A TW103116212 A TW 103116212A TW I553836 B TWI553836 B TW I553836B
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- Taiwan
- Prior art keywords
- insulating layer
- display device
- layer
- electrode
- metal layer
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 claims description 93
- 239000002184 metal Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 54
- 239000004973 liquid crystal related substance Substances 0.000 claims description 34
- 239000008393 encapsulating agent Substances 0.000 claims description 14
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical group [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 223
- 239000010409 thin film Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本發明係關於一種顯示裝置,尤指一種可降低傳導阻抗、減少漏電流、提高電容值及增加畫素儲存電容之顯示裝置。
隨著顯示器技術不斷進步,所有的顯示裝置均朝體積小、厚度薄、重量輕等趨勢發展,故目前市面上主流之顯示器裝置已由以往之陰極射線管發展成平面顯示器,如液晶顯示裝置或有機發光二極體顯示裝置等。其中,液晶顯示裝置或有機發光二極體顯示裝置可應用的領域相當多,舉凡日常生活中使用之手機、筆記型電腦、攝影機、照相機、音樂播放器、行動導航裝置、電視等顯示裝置,大多數均使用該些顯示面板。
雖然液晶顯示裝置或有機發光二極體顯示裝置已為市面上常見之顯示裝置,特別是液晶顯示裝置的技術更是相當成熟,但隨著顯示裝置不斷發展且消費者對顯示裝置之顯示品質要求日趨提高,各家廠商無不極力發展出具有更高顯示品質的顯示裝置。尤其是,有機發光二極體裝置更是目前各家廠商發展的重點項目之一。
有鑑於此,即便目前液晶顯示裝置或有機發光
二極體顯示裝置,仍需發展出具有更佳顯示品質之顯示裝置,以符合消費者需求。
本發明之主要目的係在提供一種顯示裝置,俾能同時達到可降低傳導阻抗、減少漏電流、提高電容值及增加畫素儲存電容等目的。
為達成上述目的,本發明係提供一種顯示裝置,包括:一第一基板;一第一絕緣層,設置於第一基板上;一第二絕緣層,設置於第一絕緣層上;以及一金屬層,設置於第二絕緣層上且包括複數線路,且相鄰兩線路間設有一顯露該第二絕緣層之開口區;其中,金屬層下方之第二絕緣層厚度大於開口區所顯露之第二絕緣層厚度。更具體而言,本發明之金屬層係為一圖案化金屬層,且金屬層(特別是,金屬層之線路)下方之第二絕緣層厚度大於開口區所顯露之第二絕緣層厚度。
換言之,本發明所提供之顯示裝置,包括:一第一基板;一第一絕緣層,設置於第一基板上;一第二絕緣層,設置於第一絕緣層上;以及一金屬層,部分覆蓋第二絕緣層;其中,金屬層下方(即,經金屬層覆蓋)之第二絕緣層厚度大於非金屬層下方(即,未經金屬層覆蓋)之第二絕緣層厚度。
於本發明所提供之顯示裝置中,透過將經金屬層覆蓋之第二絕緣層厚度加厚,而可達到降低傳導阻抗,並使漏電流減小之目的;同時,更透過將開口區所顯露之
未經金屬層覆蓋之第二絕緣層厚度減薄,而可達到提高電容值,並增加畫素的儲存電容之目的。
於本發明之顯示裝置中,開口區所顯露之第二絕緣層(即,非金屬層下方之第二絕緣層)厚度係小於金屬層(特別是,金屬層之線路)下方之第二絕緣層厚度。較佳為,開口區所顯露之第二絕緣層厚度比金屬層下方之第二絕緣層厚度小約10%到95%;更佳為20%到80%;且最佳為65%到75%。
此外,於本發明之顯示裝置中,第一絕緣層及第二絕緣層可為本技術領域常用之介電層材料,如氧化矽及氮化矽等。較佳為,第一絕緣層係為一氧化矽層;及/或第二絕緣層係為一氮化矽層。
再者,於本發明之顯示裝置中,層疊於第二絕緣層下方之第一絕緣層會有一側蝕現象。更具體而言,若第一絕緣層具有一第一側壁,第二絕緣層具有一第二側壁,則第二側壁係突出於第一側壁。
於本發明之顯示裝置中,第一基板上可更設有一封裝膠,其中圖案化金屬層下方之第二絕緣層厚度大於封裝膠下方之第二絕緣層厚度。在此,封裝膠之材料可依照顯示裝置類型而定;若本發明之顯示裝置係為一液晶顯示裝置,則封裝膠可採用此技術領域常用之框膠;且若本發明之顯示裝置係為一有機發光二極體顯示裝置,則封裝膠可採用此技術領域常用之可達到高阻水性及氣密性之玻璃膠。
本發明之顯示裝置可應用於有機發光二極體顯示裝置或液晶顯示裝置。當本發明之顯示裝置為一有機發光二極體顯示裝置,則可更包括一平坦層,設於金屬層(特別是,圖案化金屬層之線路)上及未經金屬層覆蓋之開口區中。此外,於此情形下,本發明之顯示裝置可更包括一有機發光二極體單元,其中有機發光二極體單元包括一第一電極、一第二電極、以及夾置於第一電極及第二電極間之一有機發光層,且金屬層(即,圖案化金屬層之線路)係與第一電極電性連接。
另一方面,當本發明之顯示裝置為一液晶顯示裝置,則可更包括一液晶顯示單元,其中液晶顯示單元包括一第一電極、一第二電極、以及夾置於第一電極及第二電極間之一液晶層,且金屬層(即,圖案化金屬層之線路)係與第一電極電性連接。
101‧‧‧氮化矽緩衝層
102‧‧‧氧化矽緩衝層
103‧‧‧多晶矽層
104‧‧‧氧化矽絕緣層
11‧‧‧第一基板
111‧‧‧第一金屬層
111’‧‧‧鉬金屬層
112‧‧‧閘極絕緣層
113‧‧‧半導體層
114‧‧‧第一絕緣層
114a‧‧‧第一側壁
115‧‧‧第二絕緣層
115a‧‧‧第二側壁
116‧‧‧第二金屬層
116a‧‧‧開口區
117‧‧‧平坦層
117a‧‧‧平坦層開口
118‧‧‧保護層
118a‧‧‧保護層開口
12‧‧‧第二基板
13‧‧‧封裝膠
14‧‧‧支撐元件
15‧‧‧有機發光二極體單元
151‧‧‧第一電極
152‧‧‧有機發光層
153‧‧‧第二電極
16‧‧‧畫素界定層
161‧‧‧畫素開口
17‧‧‧間隔物
18‧‧‧液晶顯示單元
181‧‧‧液晶層
24‧‧‧薄膜電晶體單元
25‧‧‧儲存電極
A‧‧‧顯示區
B‧‧‧非顯示區
E‧‧‧區域
R1‧‧‧連接區域
T‧‧‧薄膜電晶體元件區
T1,T2‧‧‧厚度
P-P’,Q-Q’‧‧‧剖面線
圖1係本發明實施例1之有機發光二極體顯示裝置剖面示意圖。
圖2係本發明實施例1之有機發光二極體顯示裝置之電路佈線示意圖。
圖3係本發明實施例1之有機發光二極體顯示裝置之部分顯示區剖面示意圖。
圖4A及圖4B係分別為本發明實施例1之有機發光二極體顯示裝置之部分顯示區剖面示意圖。
圖5係本發明實施例1之有機發光二極體顯示裝置之部分非顯示區示意圖。
圖6係本發明實施例1之有機發光二極體顯示裝置之沿圖5之P-P’剖面線之剖面示意圖。
圖7係本發明實施例1之有機發光二極體顯示裝置之圖3之區域E之放大圖。
圖8係本發明實施例1之有機發光二極體顯示裝置之圖1封裝膠區域之剖面示意圖。
圖9係本發明實施例2之液晶顯示裝置剖面示意圖。
圖10係本發明實施例2之液晶顯示裝置之部分顯示區剖面示意圖。
以下係藉由特定的具體實施例說明本發明之實施方式,熟習此技藝之人士可由本說明書所揭示之內容輕易地了解本發明之其他優點與功效。本發明亦可藉由其他不同的具體實施例加以施行或應用,本說明書中的各項細節亦可針對不同觀點與應用,在不悖離本創作之精神下進行各種修飾與變更。
實施例1
圖1係本實施例之有機發光二極體顯示裝置剖面示意圖。於有機發光二極體顯示裝置之製作過程中,先提供一第一基板11及一第二基板12。其中,第一基板11上設置有一有機發光二極體單元15及一畫素界定層16,其
中每一畫素界定層16係設於兩相鄰之有機發光二極體單元15間。同時,第二基板12上則設置有複數支撐元件14,並於第二基板12之邊緣先形成有一封裝膠13(於本實施例中,為一玻璃膠),且封裝膠13係透過點膠及加熱燒結製程接合於第二基板12上。接著,將第一基板11及第二基板12進行對組,其中第二基板12上之支撐元件14係對應於畫素界定層16之未形成有畫素開口161之區域。而後,以雷射加熱的方式,使封裝膠13與第一基板11進行接合,而製得本實施例之上發光有機發光二極體顯示裝置。
於本實施例中,第一基板11及第二基板12均為玻璃基板。此外,本實施例之有機發光二極體顯示面板包括一顯示區A及一非顯示區B,而所謂之非顯示區B即走線分布之區域。再者,於本實施例中,每一有機發光二極體單元15可分別發出紅光、綠光及藍光,但其他實施例並不僅限於此;舉例來說,有機發光二極體單元15可為一白光有機發光二極體單元,於此情形下,第二基板12更需設置一彩色濾光元件(圖未示)。
圖2係本實施例之有機發光二極體顯示裝置之一畫素單元之電路佈線示意圖。如圖2所示,於本實施例之有機發光二極體顯示裝置中,每一畫素單元分別包括:一掃描線、一資料線、一電容線、一電源供給線、一開關薄膜電晶體元件(如圖2之開關TFT所示)、一驅動薄膜電晶體元件(如圖2之驅動TFT所示)、一儲存電容、及一分別與第一電極及第二電極極連接之有機發光二極體元件(如
圖2之OLED所示)。
圖3係本實施例之有機發光二極體顯示裝置之部分顯示區剖面示意圖。請同時參照圖1及圖3,本實施例之有機發光二極體顯示裝置包括:一第一基板11及一與第一基板11相對設置之第二基板12。於本實施例中,有機發光二極體顯示裝置之薄膜電晶體元件係使用低溫多晶矽薄膜電晶體。如圖3所示,於顯示區A中,首先,提供一第一基板11,其上方依序設置有一氮化矽緩衝層101及一氧化矽緩衝層102,且於薄膜電晶體元件區T中,氧化矽緩衝層102上更形成有一由非晶矽雷射退火後所形成之多晶矽層103。接著,於第一基板11上依序形成一氧化矽絕緣層104、一第一金屬層111、一閘極絕緣層112、及一鉬金屬層111’。其中,位於薄膜電晶體元件區T中之第一金屬層111係作為一閘極;而閘極絕緣層112之材料為本技術領域常用之絕緣層材料,如氧化矽。而後,再於閘極絕緣層112及一鉬金屬層111’上依序層疊一第一絕緣層114、一第二絕緣層115及一第二金屬層116。其中,位於薄膜電晶體元件區T中之第二金屬層116更貫穿閘極絕緣層112、第一絕緣層114及第二絕緣層115以與多晶矽層103連接。最後,再依序形成平坦層117、一第一電極151及畫素界定層16,其中第一電極151除了設置於平坦層117更設置於平坦層117之平坦層開口117a中以與第二金屬層116電性連接,且畫素界定層16更設有一畫素開口161。
在此,第一金屬層111及第二金屬層116係作
為線路用。例如,如圖3所示,第一金屬層111在此係作為薄膜電晶體開關元件之閘極;而第二金屬層116在此係作為薄膜電晶體開關元件之源極及汲極,且第二金屬層116係為一圖案化金屬層,其具有一開口區116a,以顯露下方之第二絕緣層115;且同由第一金屬層111所形成之閘極及掃描線彼此係電性連接,而同由第二金屬層116所形成之源極/汲極及資料線彼此亦電性連接。此外,於本實施例中,第一金屬層111、第二金屬層116之材料可使用本技術領域常用之導電材料,如金屬、合金、金屬氧化物、金屬氮氧化物、或其他本技術領域常用之電極材料;且較佳為金屬材料。於本實施例中,第一金屬層111為鉬,而第二金屬層116為從第一基板11上依序層疊有Ti層、Al層及Ti層之複合金屬層。
除了如圖3所示之低溫多晶矽薄膜電晶體外,IGZO薄膜電晶體亦可用於本實施例之有機發光二極體顯示裝置中。圖4A及圖4B係分別為本實施例之有機發光二極體顯示裝置之薄膜電晶體元件區剖面示意圖。如圖4A所示,於第一基板11上方設置有一依序層疊有第一金屬層111、閘極絕緣層112、半導體層113、第一絕緣層114、第二絕緣層115、及第二金屬層116之薄膜電晶體元件;其中,第二金屬層116係與半導體層113連接。此外,半導體層113之材料為IGZO,而第一金屬層111及第二金屬層116如前所述。而後,於第二金屬層116上及其開口區116a中更層疊有一保護層118,其具有一保護層開口118a;並於保
護層118層疊一平坦層117,其具有一平坦層開口117a。透過保護層開口118a及平坦層開口117a得以顯露第二金屬層116。
接著,如圖4A所示,於平坦層117及平坦層開口117a中形成一第一電極151,再形成一具有畫素開口161之畫素界定層16。而後,於畫素界定層16與第一電極151上及畫素開口161中依序層疊一有機發光層152及一第二電極153,則完成本實施例之有機發光單元15,如圖4B所示。據此,如圖4B所示,本實施例之有機發光單元15係包括依序層疊之一第一電極151、一有機發光層152及一第二電極153,且第一電極151係與第二金屬層116電性連接。此外,畫素界定層16係設於第一電極151與有機發光層152間,且透過畫素界定層16之畫素開口161以定義出光區域。
無論是如圖3所示之低溫多晶矽薄膜電晶體或是如圖4A及4B所示之IGZO薄膜電晶體,於本實施例中,第一絕緣層114及第二絕緣層115可為本技術領域常用之介電層材料,如氧化矽及氮化矽等。於本實施例中,第一絕緣層114係為一氧化矽層,而第二絕緣層115為一氮化矽層。
無論是如圖3所示之低溫多晶矽薄膜電晶體或是如圖4A及4B所示之IGZO薄膜電晶體,於本實施例中,第一電極151及第二電極153可選用本發明所屬技術領域已知之透明電極或半透明電極。其中,透明電極可為透明
氧化物電極(TCO電極),如ITO電極或IZO電極;而半透明電極可為一金屬薄膜電極,如鎂銀合金薄膜電極、金薄膜電極、鉑薄膜電極、鋁薄膜電極等。此外,若需要,本發明之第一電極151及第二電極153之至少一者,可選用透明電極與半透明電極之複合電極,如:TCO電極與鉑薄膜電極之複合電極。在此,僅以包含有第一電極151、有機發光層152及第二電極153之有機發光二極體元件作為舉例,但本發明並不限於此;其他本技術領域常用之有機發光二極體元件均可應用於本發明之有機發光二極體顯示面板中,例如:包括電子傳輸層、電子注入層、電洞傳輸層、電洞注入層、及其他可幫助電子電洞傳輸結合之層之有機發光二極體元件均可應用於本發明中。
圖5係本實施例之有機發光二極體顯示裝置之部分非顯示區示意圖。請同時參照圖1及圖5,於非顯示區B中,第一基板11上方係依序層疊有第一金屬層111、第一絕緣層(圖未示)、第二絕緣層(圖未示)及第二金屬層116,在此第一金屬層111及第二金屬層116均作為走線,且第一金屬層111與第二金屬層116在連接區域R1係彼此電性連接。
圖6係本實施例之有機發光二極體顯示裝置之沿圖5之P-P’剖面線之剖面示意圖。如圖6所示,第一金屬層111設置於第一基板11上,第一絕緣層114設置於第一金屬層111上,第二絕緣層115設置於第一絕緣層114上,而第二金屬層116則設置於第二絕緣層115上;其中
第二金屬層116係為一圖案化金屬層並包括線路,且相鄰兩線路間設有一顯露第二絕緣層115之開口區116a(如圖5及圖6所示)。
此外,圖7係本實施例之有機發光二極體顯示裝置之圖3之區域E之放大圖。如圖7所示,被第二金屬層116所覆蓋之第二絕緣層115(即,第二金屬層116之線路下方之第二絕緣層115)厚度T1大於開口區116a所顯露之第二絕緣層115(即,未經第二金屬層116覆蓋之非第二金屬層116下方之第二絕緣層115)厚度T2;較佳為,開口區116a所顯露之第二絕緣層115厚度T2比被第二金屬層116所覆蓋之第二絕緣層115厚度T1小約10%到95%;更佳為,厚度T2比被厚度T1小約20%到80%;且最佳為,厚度T2比被厚度T1小約65%到75%。於本實施例中,厚度T2比被厚度T1小約70%,即厚度T2僅為厚度T1之30%。
在此,僅以本發明之有機發光二極體顯示裝置之部分區域描述第二絕緣層之厚度;然而,本技術領域者均了解,於其他有機發光二極體顯示裝置未描述之區域,亦有相同之第二絕緣層之厚度設計。
除此之外,如圖6所示,層疊於第二絕緣層115下方之第一絕緣層114會有一側蝕現象。更具體而言,若第一絕緣層114具有一第一側壁114a,第二絕緣層115具有一第二側壁115a,則第二側壁115a係突出於第一側壁114a。
此外,如圖1及圖8所示,圖8係圖1封裝膠
13區域之剖面示意圖,其中第一基板11上更設有一封裝膠13。請同時參考圖3、圖4A~4B及圖8,其中被第二金屬層116所覆蓋之第二絕緣層115厚度大於該封裝膠113下方之該第二絕緣層厚度。
實施例2
如圖9所示,其係為實施例之液晶顯示裝置之示意圖。於液晶顯示裝置之製作過程中,先提供一第一基板11及一第二基板12,其上方分別設有不同元件(圖未示)。舉例而言,於部分實施例中,第一基板11上方設有薄膜電晶體單元,而第二基板12上方則設有彩色濾光元件(如圖10所示,其中彩色濾光元件未示於圖中);而於部分實施例中,彩色濾光元件及薄膜電晶體單元則同時設於第一基板11。此外,第一基板11及一第二基板12之其中一者則設有複數間隔物17,並於第二基板12之邊緣先形成有一封裝膠13(於本實施例中,為一框膠)。將第一基板11及第二基板12進行對組後,再以如滴下式液晶注入製程、液晶吸入製程或其他本技術領域已知之液晶注入製程,注入液晶分子於第一基板11及第二基板12所形成之空間中,以形成一液晶層181,則可得到本實施例之液晶顯示裝置。
圖10係本發明實施例2之液晶顯示裝置之部分顯示區剖面示意圖。如圖10所示,於本實施例中,於第一基板11上方設置有一依序層疊有第一金屬層111、閘極絕緣層112、第一絕緣層114、第二絕緣層115、半導體層113及第二金屬層116之薄膜電晶體元件。此外,於第二金
屬層116上及其開口區116a中更層疊有一保護層118,而保護層118上更形成有一第一電極151,且第一電極151係與第二金屬層116電性連接。在此,保護層118之材料可為本技術領域常用之如氧化矽之鈍化層材料。再者,於本實施例中,第二絕緣層115與第二金屬層116間之厚度關係亦與實施例1相同,故在此不再贅述。
此外,如圖10所示,本實施例之液晶顯示裝置係包括:一液晶顯示單元18,其中液晶顯示單元18包括一第一電極151、一第二電極153、以及夾置於第一電極151及第二電極153間之一液晶層181,且第二金屬層116係與第一電極151電性連接。再者,於本實施例之液晶顯示裝置中,第二電極153係設於第二基板12上;且第二基板12上更設有一彩色濾光元件(圖未示)。
除此之外,本實施例之液晶顯示裝置可更包括一背光模組,設於第一基板11下方,以提供入射光至液晶層181。
綜上所述,於本發明所提供之顯示裝置中,透過將經金屬層(即,前述實施例所述之第二金屬層)覆蓋之第二絕緣層厚度加厚,而可達到降低傳導阻抗,並使漏電流減小之目的;同時,更透過將開口區(即,前述實施例所述之未覆蓋有第二金屬層之開口區)所顯露之第二絕緣層厚度減薄,而可達到提高電容值,並增加畫素的儲存電容之目的。藉此,可提升顯示裝置之顯示品質,以符合消費者對於電子產品的要求。
此外,本發明前述實施例所製得之顯示裝置,可應用於本技術領域已知之任何需要顯示螢幕之電子裝置上,如顯示器、手機、筆記型電腦、攝影機、照相機、音樂播放器、行動導航裝置、電視等。
上述實施例僅係為了方便說明而舉例而已,本發明所主張之權利範圍自應以申請專利範圍所述為準,而非僅限於上述實施例。
11‧‧‧第一基板
111‧‧‧第一金屬層
114‧‧‧第一絕緣層
114a‧‧‧第一側壁
115‧‧‧第二絕緣層
115a‧‧‧第二側壁
116‧‧‧第二金屬層
116a‧‧‧開口區
T1,T2‧‧‧厚度
Claims (16)
- 一種顯示裝置,包括:一第一基板;一第一絕緣層,設置於該第一基板上;一第二絕緣層,設置於該第一絕緣層上;以及一圖案化金屬層,設置於該第二絕緣層上且包括複數線路,且相鄰兩線路間設有一顯露該第二絕緣層之開口區;其中,該等線路下方之該第二絕緣層厚度大於該開口區所顯露之該第二絕緣層厚度;且,該第一基板上更設有一封裝膠,其中該圖案化金屬層下方之該第二絕緣層厚度大於該封裝膠下方之該第二絕緣層厚度。
- 如申請專利範圍第1項所述之顯示裝置,其中該開口區所顯露之該第二絕緣層厚度比該圖案化金屬層下方之該第二絕緣層厚度小約10%到95%。
- 如申請專利範圍第1項所述之顯示裝置,其中該第一絕緣層係為一氧化矽層。
- 如申請專利範圍第1項所述之顯示裝置,其中該第二絕緣層係為一氮化矽層。
- 如申請專利範圍第1項所述之顯示裝置,其中該第一絕緣層具有一第一側壁,該第二絕緣層具有一第二側壁,且該第二側壁係突出於該第一側壁。
- 如申請專利範圍第1項所述之顯示裝置,其中該顯示裝置係為一有機發光二極體顯示裝置。
- 如申請專利範圍第6項所述之顯示裝置,更包括一平坦層,設於該圖案化金屬層及該開口區中。
- 如申請專利範圍第6項所述之顯示裝置,更包括一有機發光二極體單元,其中該有機發光二極體單元包括一第一電極、一第二電極、以及夾置於該第一電極及該第二電極間之一有機發光層,且該圖案化金屬層係與該第一電極電性連接。
- 如申請專利範圍第1項所述之顯示裝置,其中該顯示裝置係為一液晶顯示裝置。
- 如申請專利範圍第9項所述之顯示裝置,更包括一液晶顯示單元,其中該液晶顯示單元包括一第一電極、一第二電極、以及夾置於該第一電極及該第二電極間之一液晶層,且該圖案化金屬層係與該第一電極電性連接。
- 一種顯示裝置,包括:一第一基板;一第一絕緣層,設置於該第一基板上;一第二絕緣層,設置於該第一絕緣層上;以及一金屬層,部分覆蓋該第二絕緣層;其中,該金屬層下方之該第二絕緣層厚度大於非該金屬層下方之該第二絕緣層厚度;且,該第一基板上更設有一封裝膠,其中該金屬層下方之該第二絕緣層厚度大於該封裝膠下方之該第二絕緣層厚度。
- 如申請專利範圍第11項所述之顯示裝置,其中非金屬層下方之該第二絕緣層厚度比該金屬層下方之該第二絕緣層厚度小約10%到95%。
- 如申請專利範圍第11項所述之顯示裝置,其中該第一絕緣層係為一氧化矽層。
- 如申請專利範圍第11項所述之顯示裝置,其中該第二絕緣層係為一氮化矽層。
- 如申請專利範圍第11項所述之顯示裝置,其中該第一絕緣層具有一第一側壁,該第二絕緣層具有一第二側壁,且該第二側壁係突出於該第一側壁。
- 如申請專利範圍第11項所述之顯示裝置,其中該顯示裝置係為一液晶顯示裝置或一有機發光二極體顯示裝置。
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103116212A TWI553836B (zh) | 2014-05-07 | 2014-05-07 | 顯示裝置 |
EP14175651.0A EP2942814A1 (en) | 2014-05-07 | 2014-07-03 | Display device |
CN201410333265.3A CN105097825B (zh) | 2014-05-07 | 2014-07-14 | 显示装置 |
CN201420385669.2U CN204179080U (zh) | 2014-05-07 | 2014-07-14 | 显示装置 |
JP2014004387U JP3193995U (ja) | 2014-05-07 | 2014-08-19 | 表示装置 |
US14/572,460 US9406737B2 (en) | 2014-05-07 | 2014-12-16 | Display device having particular insulating layer |
KR1020150010376A KR20150127528A (ko) | 2014-05-07 | 2015-01-22 | 표시 장치 |
US15/194,538 US10649290B2 (en) | 2014-05-07 | 2016-06-27 | Display device comprising a second metal layer having a sidewall region with a first thickness and a non-sidewall region with a second thickness larger than the first thickness |
US16/844,835 US11315991B2 (en) | 2014-05-07 | 2020-04-09 | Display device comprising a pixel defining layer having a pixel opening that defines a light emitting region |
US17/703,991 US11665930B2 (en) | 2014-05-07 | 2022-03-25 | Display device comprising a light emitting diode unit electrically connected to a first portion of a second metal layer that covers a part of a second insulating layer |
US18/303,338 US20230255065A1 (en) | 2014-05-07 | 2023-04-19 | Display device |
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TW103116212A TWI553836B (zh) | 2014-05-07 | 2014-05-07 | 顯示裝置 |
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TW201543652A TW201543652A (zh) | 2015-11-16 |
TWI553836B true TWI553836B (zh) | 2016-10-11 |
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US (5) | US9406737B2 (zh) |
EP (1) | EP2942814A1 (zh) |
JP (1) | JP3193995U (zh) |
KR (1) | KR20150127528A (zh) |
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TWI553836B (zh) | 2014-05-07 | 2016-10-11 | 群創光電股份有限公司 | 顯示裝置 |
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US10528172B2 (en) * | 2016-06-17 | 2020-01-07 | Microsoft Technology Licensing, Llc | Pressure sensor for display devices |
CN106252357B (zh) * | 2016-08-24 | 2019-05-21 | 武汉华星光电技术有限公司 | 低温多晶硅薄膜晶体管阵列基板及其制作方法、液晶面板 |
US11133580B2 (en) * | 2017-06-22 | 2021-09-28 | Innolux Corporation | Antenna device |
CN109326634B (zh) * | 2018-09-30 | 2020-11-06 | 云谷(固安)科技有限公司 | 显示面板及其制备方法、显示装置 |
CN109785760B (zh) * | 2019-01-16 | 2020-11-24 | 深圳市华星光电半导体显示技术有限公司 | Led显示屏模组及显示装置 |
CN109904208B (zh) * | 2019-03-19 | 2021-01-26 | 京东方科技集团股份有限公司 | 有机发光显示器及其制备方法、显示装置 |
CN116830830A (zh) * | 2022-01-25 | 2023-09-29 | 京东方科技集团股份有限公司 | 阵列基板和显示设备 |
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Also Published As
Publication number | Publication date |
---|---|
US11665930B2 (en) | 2023-05-30 |
US20150325634A1 (en) | 2015-11-12 |
KR20150127528A (ko) | 2015-11-17 |
US11315991B2 (en) | 2022-04-26 |
CN204179080U (zh) | 2015-02-25 |
US20220216277A1 (en) | 2022-07-07 |
US10649290B2 (en) | 2020-05-12 |
EP2942814A1 (en) | 2015-11-11 |
CN105097825A (zh) | 2015-11-25 |
US20200233273A1 (en) | 2020-07-23 |
US9406737B2 (en) | 2016-08-02 |
JP3193995U (ja) | 2014-10-30 |
TW201543652A (zh) | 2015-11-16 |
US20230255065A1 (en) | 2023-08-10 |
CN105097825B (zh) | 2019-03-08 |
US20160307923A1 (en) | 2016-10-20 |
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