CN105088153A - 半导体硅锗薄膜的制备方法 - Google Patents
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Abstract
一种半导体硅锗薄膜的制备方法,其特征在于包括如下步骤:对单晶硅基片进行清洗,清洗后置于衬底台上;分别进行溅射硅的单一薄膜和锗的单一薄膜;采用共溅法,在又一单晶硅基片沉积不同成分的硅锗合金薄膜,测得所沉积薄膜的厚度,得到具有不同成分比的硅锗合金薄膜。与现有技术相比,本发明的优点在于:采用偏置靶材离子束沉积,结合了离子束沉积技术和磁控溅射沉积技术的优点,能够有效克服磁控溅射沉积技术和离子束沉积技术两者的缺点。
Description
技术领域
本发明涉及一种半导体薄膜,尤其涉及一种半导体硅锗薄膜,该半导体薄膜可应用于光电微机械电子系统领域中。
背景技术
硅和锗是电子传输器件中常用的两种半导体材料。由硅和锗两种材料构成的硅锗合金薄膜作为先进的硅系统材料,受到越来越广泛的应用。硅锗合金薄膜材料主要用来提高半导体器件中的电子和空穴迁移率,例如金属氧化物场效应管(Metal,OxideSemiconductorFieldEffectTransistor,MOSFET),调制掺杂场效应管(ModulationDopedFieldEffectTransistor,MODFET)和掺杂沟道场效应管(DopedChannelFieldEffectTransistor,DCFET)等。另外,硅锗薄膜异质结构也被用于量子效应器件中,例如共振隧道二极管(ResonantTunnelingDiode,RTD),它非常有希望成为下一代高速硅系统器件。
把硅锗半导体薄膜材料应用于光电微电子机械系统(MicroElectroMechanicalSystems,MEMS)领域有着巨大的需求,但是关于这方面的报道却很少。通过控制硅锗合金薄膜的成分可以控制它的某些性能,比如电学性能、机械性能以及光学性能等,这些性能对于光电MEMS来讲是非常重要的方面。为了更好的发挥MEMS光学方面的性能,制备高质量的硅锗薄膜以及了解它们的机械性能是非常有必要的。
现有的硅锗合金薄膜广泛采用电沉积、化学气相沉积、磁控溅射沉积技术和离子束沉积(IonBeamDeposition,IBD)技术来进行制备,
电沉积的文献可以参考专利号为ZL201010301123.0的中国发明专利《硅锗合金薄膜材料的制备方法》(授权公告号为CN101880901B)。
化学气相沉积的文献可以参考申请号为201410581435.X的中国发明专利申请公开《掺氧非晶硅锗薄膜、异质结晶体硅太阳能电池及制备方法》(申请公布号CN104393121A)。
磁控溅射沉积技术和离子束沉积都存在一定的局限性,主要体现在磁控溅射沉积技术会刻蚀跑道以及靶材表面容易产生中毒现象。而离子束沉积技术通过倾斜方式发射离子束,会降低靶材的使用寿命;逸出的离子束会对腔室材料形成溅射,污染所需要的硅锗薄膜;速率较低,对较厚的硅锗薄膜材料沉积困难。
光电MEMS要求相应的半导体薄膜材料具有优良的物理特性,而材料成分的不同深刻的影响着薄膜的各项性能。如何精确的控制薄膜的成分以及获得优异的物理性能是沉积半导体薄膜的关键技术。
文献1“Fabricationofsilicon/germaniumsuperlatticebyionbeamsputtering,Vacuum,Vol.66,DEC2011,p457-462.”公开了一种利用离子束沉积方法在硅基底上生长半导体硅锗薄膜的方法,沉积了300nm厚度的硅锗双分层薄膜,从给出的原子力显微镜三维图形中看出,它的粗糙度为1.08nm。
文献2“StructuralandelectricalstudiesofultrathinlayerswithSi0.7Ge0.3nanocrystalsconfinedinaSiGe/SiO2superlattice,JournalofAppliedPhysics,Vol.111,OCT2012,p.104323-1--104323-4.”公开了一种利用射频磁控溅射沉积技术制备硅锗薄膜的方法,该方法利用共溅的方式,制备了较薄的硅锗薄膜,获得了较好的结构和电学特性,但是这一方式难以对薄膜的成分进行精确控制,同时靶材的利用率也不高,降低了靶材的寿命,不利于大规模推广应用。
磁控溅射沉积技术由于采用了环状磁场,会迫使二次电子跳栏式的沿着环状磁场转圈。相应的,环状磁场控制的区域是等离子体密度最高的部位,这样会在靶材上面溅射出一条环状的沟槽,造成刻蚀跑道的情况,沟槽一旦穿过靶材,就会使得整块靶材报废,因此会导致靶材的利用率不高,而磁控溅射沉积技术所采用的等离子体由于不稳定,会造成靶材表面的不均匀刻蚀,产生中毒现象,中毒区域溅射不可避免导致成膜掺杂,这样会降低所制备的薄膜的纯度。
离子束沉积技术通过倾斜方式发射离子束,造成整块靶材刻蚀不均匀,这样会降低靶材的使用寿命;离子束由于发生逸出现象,逸出的离子束会对真空腔室材料产生溅射作用,产生杂质离子,污染所制备的硅锗薄膜;由于离子束轰击到的靶材面积太小,造成沉积速率较低,对较厚的硅锗薄膜材料沉积困难。
发明内容
本发明所要解决的技术问题是针对上述的技术现状而提供一种利用偏置靶材离子束沉积实现半导体硅锗薄膜的制备方法。
本发明所要解决的又一个技术问题是靶材的使用寿命长的半导体硅锗薄膜的制备方法。
本发明所要解决的又一个技术问题是提高薄膜的纯度的半导体硅锗薄膜的制备方法。
本发明解决上述技术问题所采用的技术方案为:一种半导体硅锗薄膜的制备方法,其特征在于包括如下步骤:
①用丙酮对单晶硅基片进行超声清洗5~10min,然后用甲醇超声清洗5~10min,再次用异丙醇超声清洗5~10min,最后用去离子水反复冲洗,干燥后将单晶硅基片置于衬底台上;
②将沉积系统的真空室抽真空至8×10-8~9×10-8Torr,使腔室温度保持在室温20~30℃,并维持真空室压强维持在8×10-8~9×10-8Torr;
③在单晶硅基片上溅射硅的单一薄膜,溅射压强为4×10-4~5×10-4Torr,负极偏置电压为600~700V,溅射气体为氩气,气体流量为30sccm~50sccm,溅射时间30~50min,测得所沉积薄膜的厚度,计算得到当前参数下硅薄膜的沉积速率;
④另取一单晶硅基片,溅射锗的单一薄膜,溅射压强为4×10-4~5×10-4Torr,负极偏置电压为600~700V,溅射气体为氩气,气体流量为30sccm~50sccm,溅射时间30~50min,测得所沉积薄膜的厚度,计算得到当前参数下锗薄膜的沉积速率;
⑤采用共溅的方法,在又一单晶硅基片沉积不同成分的硅锗合金薄膜,溅射压强为4×10-4~5×10-4Torr,负极偏置电压为600~700V,溅射气体为氩气,气体流量为30sccm~50sccm,溅射时间为30~50min,测得所沉积薄膜的厚度,得到具有不同成分比的硅锗合金薄膜;
上述步骤③、步骤④和步骤⑤中的溅射压强、负极偏置电压、气体流量及溅射时间均保持一致。
作为优选,所述硅锗合金薄膜中硅锗质量配比为3:4~2:5。
作为优选,所述硅锗合金薄膜的厚度为64nm~280nm。
与现有技术相比,本发明的优点在于:采用偏置靶材离子束沉积,结合了离子束沉积技术和磁控溅射沉积技术的优点,能够有效克服磁控溅射沉积技术和离子束沉积技术两者的缺点,非常适合硅锗等半导体薄膜的制备。具体如下:
偏置靶材离子束沉积采用将靶材通上负偏置电压的方法来控制等离子体,不会造成刻蚀跑道和刻蚀不均匀的情况,能够有效提高靶材的使用寿命。
偏置靶材离子束沉积采用低能量的等离子体源,性能非常稳定,不会造成靶材表面的不均匀刻蚀,避免了中毒现象的发生,有效提高了所制备的薄膜的纯度。
偏置靶材离子束沉积由于发射的等离子体能量非常低,逸出的离子束不会对真空腔室产生溅射作用,提高了所制备薄膜的纯度。
偏置靶材离子束沉积在靶材附近安装了等离子护套,它能够加快正离子进入护套的速度,从而保证离子束轰击的面积大于靶材的面积,并且可以通过调节电压来调节沉积速率,能够获得较高的沉积速率,可以沉积较厚的薄膜材料。
偏置靶材离子束沉积通过选择合适的电压值,借助于电压对溅射弹射能量的影响,能够对薄膜交界面的原子混合以及薄膜的整体粗糙度进行有效的调节。
通过控制偏置电压和沉积时间,在硅片上制备具有不同成分的硅锗合金薄膜,所制备出的硅锗合金薄膜的粗糙度由现有技术的1.08nm减小到0.46nm。
附图说明
图1为实施例1中获得的硅锗合金薄膜在原子力显微镜测试下的表面二维显微照片。
图2为实施例1中获得的硅锗合金薄膜在原子力显微镜测试下的表面三维形貌图。
具体实施方式
以下结合附图实施例对本发明作进一步详细描述。
实施例1,
(1)首先用丙酮对单晶硅基片进行超声清洗10min,其次用甲醇超声清洗10min,再次用异丙醇超声清洗10min,最后用去离子水反复冲洗,干燥后将硅基片置于衬底台上。
(2)将沉积系统的真空室抽真空至9×10-8Torr,使腔室温度保持至室温25℃,并维持真空室压强维持在9×10-8Torr。
(3)在硅基片上溅射硅的单一薄膜,溅射压强调整为5×10-4Torr,负极偏置电压为600V,溅射气体为氩气,气体流量为40sccm,溅射时间30min,测得所沉积薄膜的厚度24nm,计算得到当前参数下硅薄膜的沉积速率0.8nm/min。
(4)另取新硅基片,溅射锗的单一薄膜,溅射压强调整为5×10-4Torr,负极偏置电压为600V,溅射气体为氩气,气体流量为40sccm,溅射时间30min,测得所沉积薄膜的厚度60nm,计算得到当前参数下锗薄膜的沉积速率2nm/min。
(5)采用共溅的方法,在新硅基片沉积不同成分的硅锗合金薄膜,溅射压强调整为5×10-4Torr,负极偏置电压为600V,溅射气体为氩气,气体流量为40sccm,溅射时间为30min测得所沉积薄膜的厚度为84nm,最终得到硅锗合金薄膜的质量比为2:5。
结合图1和图2,采用原子力显微镜对本实施例制备的硅锗合金薄膜进行测量,从附图中可以看到均方根粗糙度为0.46nm。
实施例2:
(1)首先用丙酮对单晶硅基片进行超声清洗8min,其次用甲醇超声清洗8min,再次用异丙醇超声清洗8min,最后用去离子水反复冲洗,干燥后将硅基片置于衬底台上。
(2)将沉积系统的真空室抽真空至8×10-8Torr,使腔室温度保持至室温25℃,并维持真空室压强维持在8×10-8Torr。
(3)在硅基片上溅射硅的单一薄膜,溅射压强调整为4×10-4Torr,负极偏置电压为700V,溅射气体为氩气,气体流量为40sccm,溅射时间40min,测得所沉积薄膜的厚度64nm,计算得到当前参数下硅薄膜的沉积速率1.6nm/min。
(4)另取新硅基片,溅射锗的单一薄膜,溅射压强调整为4×10-4Torr,负极偏置电压为700V,溅射气体为氩气,气体流量为40sccm,溅射时间40min,测得所沉积薄膜的厚度128nm,计算得到当前参数下锗薄膜的沉积速率3.2nm/min。
(5)采用共溅的方法,在新硅基片沉积不同成分的硅锗合金薄膜,溅射压强调整为4×10-4Torr,负极偏置电压为700V,溅射气体为氩气,气体流量为40sccm,溅射时间为40min测得所沉积薄膜的厚度为192nm,最终得到的硅锗合金薄膜的质量比为2:3。
实施例3:
(1)首先用丙酮对单晶硅基片进行超声清5min,其次用甲醇超声清洗5min,再次用异丙醇超声清洗5min,最后用去离子水反复冲洗,干燥后将硅基片置于衬底台上。
(2)将沉积系统的真空室抽真空至8×10-8Torr,使腔室温度保持至室温25℃,并维持真空室压强维持在8×10-8Torr。
(3)在硅基片上溅射硅的单一薄膜,溅射压强调整为4×10-4Torr,负极偏置电压为700V,溅射气体为氩气,气体流量为40sccm,溅射时间50min,测得所沉积薄膜的厚度120nm,计算得到当前参数下硅薄膜的沉积速率2.4nm/min。
(4)另取新硅基片,溅射锗的单一薄膜,溅射压强调整为4×10-4Torr,负极偏置电压为700V,溅射气体为氩气,气体流量为40sccm,溅射时间50min,测得所沉积薄膜的厚度160nm,计算得到当前参数下锗薄膜的沉积速率3.2nm/min。
(5)采用共溅的方法,在新硅基片沉积不同成分的硅锗合金薄膜,溅射压强调整为4×10-4Torr,负极偏置电压为700V,溅射气体为氩气,气体流量为40sccm,溅射时间为50min测得所沉积薄膜的厚度为280nm,最终得到的硅锗合金薄膜的质量比为3:4。
通过以上实施例可以得出:
(1)磁控溅射沉积技术采用环状磁场来控制等离子体,会造成刻蚀跑道的情况,造成靶材利用率偏低,而离子束沉积技术通过倾斜方式发射离子束,造成整块靶材刻蚀不均匀,也会造成靶材利用率偏低,因此磁控溅射沉积技术和离子束沉积技术均会降低靶材的使用寿命。相比而言,偏置靶材离子束沉积技术采用将靶材通上负偏置电压的方法来控制等离子体,不会造成刻蚀跑道和刻蚀不均匀的情况,能够有效提高靶材的使用寿命。
(2)磁控溅射沉积技术所采用的等离子体由于不稳定,会造成靶材表面的不均匀刻蚀,产生中毒现象,中毒区域溅射不可避免导致成膜掺杂,这样会降低所制备的薄膜的纯度,而偏置靶材离子束沉积技术采用低能量的等离子体源,性能非常稳定,不会造成靶材表面的不均匀刻蚀,避免了中毒现象的发生,有效提高了所制备的薄膜的纯度。
(3)离子束沉积技术由于会发生逸出现象,逸出的离子束会对真空腔室材料产生溅射作用,产生杂质离子,污染所制备的薄膜,而偏置靶材离子束沉积技术由于发射的等离子体能量非常低,逸出的离子束不会对真空腔室产生溅射作用,提高了所制备薄膜的纯度。
(4)离子束沉积技术由于离子束轰击到的靶材面积太小,会造成沉积速率较低,对较厚的薄膜材料沉积困难,而偏置靶材离子束沉积技术在靶材附近安装了等离子护套,它能够加快正离子进入护套的速度,从而保证离子束轰击的面积大于靶材的面积,并且可以通过调节电压来调节沉积速率,能够获得较高的沉积速率,可以沉积较厚的薄膜材料。
(5)偏置靶材离子束沉积技术通过选择合适的电压值,借助于电压对溅射弹射能量的影响,能够对薄膜交界面的原子混合以及薄膜的整体粗糙度进行有效的调节。
由上可知,偏置靶材离子束沉积技术能够有效克服磁控溅射沉积技术和离子束沉积技术在制备硅锗合金等半导体薄膜方面的不足,通过控制偏置电压和沉积时间,在硅片上制备具有不同成分的硅锗合金薄膜,所制备出的硅锗合金薄膜的粗糙度由现有技术的1.08nm减小到0.46nm,这对光电MEMS的发展具有非常重要的意义。
Claims (3)
1.一种半导体硅锗薄膜的制备方法,其特征在于包括如下步骤:
①用丙酮对单晶硅基片进行超声清洗5~10min,然后用甲醇超声清洗5~10min,再次用异丙醇超声清洗5~10min,最后用去离子水反复冲洗,干燥后将单晶硅基片置于衬底台上;
②将沉积系统的真空室抽真空至8×10-8~9×10-8Torr,使腔室温度保持在室温20~30℃,并维持真空室压强维持在8×10-8~9×10-8Torr;
③在单晶硅基片上溅射硅的单一薄膜,溅射压强为4×10-4~5×10-4Torr,负极偏置电压为600~700V,溅射气体为氩气,气体流量为30sccm~50sccm,溅射时间30~50min,测得所沉积薄膜的厚度,计算得到当前参数下硅薄膜的沉积速率;
④另取一单晶硅基片,溅射锗的单一薄膜,溅射压强为4×10-4~5×10-4Torr,负极偏置电压为600~700V,溅射气体为氩气,气体流量为30sccm~50sccm,溅射时间30~50min,测得所沉积薄膜的厚度,计算得到当前参数下锗薄膜的沉积速率;
⑤采用共溅的方法,在又一单晶硅基片沉积不同成分的硅锗合金薄膜,溅射压强为4×10-4~5×10-4Torr,负极偏置电压为600~700V,溅射气体为氩气,气体流量为30sccm~50sccm,溅射时间为30~50min,测得所沉积薄膜的厚度,得到具有不同成分比的硅锗合金薄膜;
上述步骤③、步骤④和步骤⑤中的溅射压强、负极偏置电压、气体流量及溅射时间均保持一致。
2.根据权利要求1所述的半导体硅锗薄膜的制备方法,其特征在于所述硅锗合金薄膜中硅锗质量配比为3:4~2:5。
3.根据权利要求1所述的半导体硅锗薄膜的制备方法,其特征在于所述硅锗合金薄膜的厚度为64nm~280nm。
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