WO2017028467A1 - 半导体硅锗薄膜的制备方法 - Google Patents

半导体硅锗薄膜的制备方法 Download PDF

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WO2017028467A1
WO2017028467A1 PCT/CN2016/000439 CN2016000439W WO2017028467A1 WO 2017028467 A1 WO2017028467 A1 WO 2017028467A1 CN 2016000439 W CN2016000439 W CN 2016000439W WO 2017028467 A1 WO2017028467 A1 WO 2017028467A1
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sputtering
film
silicon
silicon germanium
torr
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French (fr)
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侯晓伟
郭俊杰
倪大成
王飞
郑华雄
郑良广
李菊萍
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宁波中车时代传感技术有限公司
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Publication of WO2017028467A1 publication Critical patent/WO2017028467A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Definitions

  • the present invention relates to a semiconductor thin film, and more particularly to a semiconductor silicon germanium thin film which can be applied to the field of optoelectronic micromechanical electronic systems.
  • Silicon and germanium are two semiconductor materials commonly used in electron transport devices. Silicon germanium alloy films composed of silicon and germanium are widely used as advanced silicon system materials. Silicon germanium alloy thin film materials are mainly used to improve electron and hole mobility in semiconductor devices, such as Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Modulation Doped Field Effect (Modulation Doped Field Effect) Transistor, MODFET) and Doped Channel Field Effect Transistor (DCFET).
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • MODFET Modulation Doped Field Effect Transistor
  • DCFET Doped Channel Field Effect Transistor
  • silicon germanium thin film heterostructures are also used in quantum effect devices, such as Resonant Tunneling Diodes (RTDs), which are very promising as next-generation high-speed silicon system devices.
  • RTDs Resonant Tunneling Diodes
  • magnetron sputtering deposition technology and ion beam deposition have certain limitations, mainly reflected in the fact that magnetron sputtering deposition technology will etch the runway and the surface of the target is prone to poisoning.
  • the ion beam deposition technique emits the ion beam by tilting, which reduces the service life of the target; the escaping ion beam will cause sputtering of the chamber material and contaminate the silicon germanium film required: the rate is lower, and the thicker Silicon germanium film materials are difficult to deposit.
  • Photoelectric MEMS requires that the corresponding semiconductor thin film materials have excellent physical properties, and the difference in material composition profoundly affects the properties of the thin film. How to accurately control the composition of the film and obtain excellent physical properties are the key technologies for depositing semiconductor films.
  • Document 1 "Fabrication of silicon/germanium superlattice by ion beam sputtering, Vacuum, Vol. 66, DEC 2011, p457-462.” discloses a method for growing a semiconductor silicon germanium film on a silicon substrate by ion beam deposition, depositing a 300 nm thick silicon germanium double layered film from the given atomic force It is seen in the three-dimensional image of the microscope that its roughness is 1.08 nm.
  • the magnetron sputtering deposition technique uses a circular magnetic field to force the secondary electron jumper to circle along the annular magnetic field.
  • the area controlled by the annular magnetic field is the site with the highest plasma density, which will sputter an annular groove on the target, which will cause the etching of the runway. Once the groove passes through the target, it will make The whole target is scrapped, so the utilization rate of the target is not high, and the plasma used in the magnetron sputtering deposition technology is unstable, which causes uneven etching of the surface of the target, resulting in poisoning, poisoning area. Sputtering inevitably results in film doping, which reduces the purity of the film produced.
  • Ion beam deposition technology emits an ion beam by tilting, resulting in uneven etching of the entire target, which will reduce the service life of the target; the ion beam will appear due to the occurrence of the escape, and the escaped ion beam will produce the vacuum chamber material.
  • the technical problem to be solved by the present invention is to provide a method for preparing a semiconductor silicon germanium film by using a bias target ion beam deposition in view of the above state of the art.
  • Still another technical problem to be solved by the present invention is a method for preparing a semiconductor silicon germanium film having a long service life of a target.
  • Still another technical problem to be solved by the present invention is a method for preparing a semiconductor silicon germanium film which improves the purity of a film.
  • the technical solution adopted by the present invention to solve the above technical problem is: a method for preparing a semiconductor silicon germanium film, which comprises the following steps;
  • the sputtering pressure is 4 ⁇ 10 -4 ⁇ 5 ⁇ 10 -4 Torr
  • the negative bias voltage is 600 ⁇ 700V
  • the sputtering gas is argon
  • the gas flow rate is 30sccm ⁇ 50sccm
  • sputtering time 30 ⁇ 50min
  • the thickness of the deposited film is measured, and the deposition rate of the silicon film under the current parameters is calculated;
  • a silicon germanium alloy film of different composition is deposited on another single crystal silicon substrate, the sputtering pressure is 4 ⁇ 10 -4 to 5 ⁇ 10 -4 Torr, and the negative bias voltage is 600-700V.
  • the sputtering gas is argon gas, the gas flow rate is 30 sccm to 50 sccm, the sputtering time is 30 to 50 min, and the thickness of the deposited film is measured to obtain a silicon germanium alloy film having different composition ratios;
  • the silicon germanium alloy film has a silicon germanium mass ratio of 3:4 to 2:5.
  • the silicon germanium alloy film has a thickness of 64 nm to 280 nm.
  • the invention has the advantages that the use of biased target ion beam deposition, combined with the advantages of ion beam deposition technology and magnetron sputtering deposition technology, can effectively overcome magnetron sputtering deposition technology and ion beam
  • the disadvantages of both deposition techniques are very suitable for the preparation of semiconductor films such as silicon germanium. details as follows:
  • the bias target ion beam deposition uses a method of controlling the plasma by applying a negative bias voltage to the target, which does not cause etched runway and uneven etching, and can effectively improve the service life of the target.
  • the biased target ion beam deposition uses a low-energy plasma source, and the performance is very stable, which does not cause uneven etching on the surface of the target, avoids the occurrence of poisoning, and effectively improves the purity of the prepared film.
  • the biased target ion beam deposition is equipped with a plasma sheath near the target, which accelerates the velocity of positive ions entering the sheath, thereby ensuring that the area of the ion beam bombardment is larger than the area of the target, and the deposition rate can be adjusted by adjusting the voltage. A higher deposition rate can be obtained and a thicker film material can be deposited.
  • the biased target ion beam deposition can effectively adjust the atomic mixing of the film interface and the overall roughness of the film by selecting the appropriate voltage value and by the effect of the voltage on the sputtering ejection energy.
  • silicon germanium alloy films having different compositions were prepared on a silicon wafer, and the roughness of the prepared silicon germanium alloy film was reduced from 1.08 nm to 0.46 nm in the prior art.
  • Example 1 is a two-dimensional photomicrograph of a surface of a silicon germanium alloy film obtained in Example 1 under an atomic force microscope test.
  • Example 2 is a three-dimensional topographical view of a silicon germanium alloy film obtained in Example 1 under an atomic force microscope test.
  • the single crystal silicon substrate was ultrasonically cleaned with acetone for 10 min, then ultrasonically cleaned with methanol for 10 min, ultrasonically cleaned again with isopropanol for 10 min, and finally rinsed repeatedly with deionized water. After drying, the silicon substrate was placed in the lining. On the base.
  • the vacuum chamber of the deposition system was evacuated to 9 ⁇ 10 -8 Torr, the chamber temperature was maintained to room temperature of 25 ° C, and the vacuum chamber pressure was maintained at 9 ⁇ 10 -8 Torr.
  • the sputtering pressure is adjusted to 5 ⁇ 10 -4 Torr, the anode bias voltage is 600 V, the sputtering gas is argon gas, the gas flow rate is 40 sccm, and the sputtering time is 30 min.
  • the thickness of the deposited film was measured to be 24 nm, and the deposition rate of the silicon film under the current parameters was calculated to be 0.8 nm/min.
  • Another new silicon substrate a single film of sputtering tantalum, the sputtering pressure is adjusted to 5 ⁇ 10 -4 Torr, the anode bias voltage is 600V, the sputtering gas is argon gas, the gas flow rate is 40sccm, sputtering At a time of 30 min, the thickness of the deposited film was measured to be 60 nm, and the deposition rate of the ruthenium film at the current parameter was calculated to be 2 nm/min.
  • a silicon germanium alloy film of different composition is deposited on a new silicon substrate, the sputtering pressure is adjusted to 5 ⁇ 10 -4 Torr, the anode bias voltage is 600 V, and the sputtering gas is argon gas.
  • the flow rate was 40 sccm, the sputtering time was 30 min, and the thickness of the deposited film was 84 nm, and the mass ratio of the silicon germanium alloy film was 2:5.
  • the silicon germanium alloy film prepared in this example was measured by an atomic force microscope, and the root mean square roughness was 0.46 nm as seen from the drawing.
  • the single crystal silicon substrate was ultrasonically cleaned with acetone for 8 min, then ultrasonically cleaned with methanol for 8 min, ultrasonically cleaned again with isopropanol for 8 min, and finally rinsed repeatedly with deionized water. After drying, the silicon substrate was placed in the lining. On the base.
  • the vacuum chamber of the deposition system was evacuated to 8 ⁇ 10 -8 Torr, the chamber temperature was maintained to room temperature of 25 ° C, and the vacuum chamber pressure was maintained at 8 ⁇ 10 -8 Torr.
  • the sputtering pressure is adjusted to 4 ⁇ 10 -4 Torr, the anode bias voltage is 700 V, the sputtering gas is argon gas, the gas flow rate is 40 sccm, and the sputtering time is 40 min.
  • the thickness of the deposited film was measured to be 64 nm, and the deposition rate of the silicon film under the current parameters was calculated to be 1.6 nm/min.
  • Another new silicon substrate a single film of sputtering tantalum, the sputtering pressure is adjusted to 4 ⁇ 10 -4 Torr, the anode bias voltage is 700V, the sputtering gas is argon gas, the gas flow rate is 40sccm, sputtering At a time of 40 min, the thickness of the deposited film was measured to be 128 nm, and the deposition rate of the germanium film under the current parameters was calculated to be 3.2 nm/min.
  • a silicon germanium alloy film of different composition is deposited on a new silicon substrate, the sputtering pressure is adjusted to 4 ⁇ 10 -4 Torr, the anode bias voltage is 700V, and the sputtering gas is argon gas.
  • the flow rate was 40 sccm, the sputtering time was 40 min, and the thickness of the deposited film was 192 nm, and the mass ratio of the finally obtained silicon germanium alloy film was 2:3.
  • the single crystal silicon substrate was ultrasonicated with acetone for 5 min, followed by ultrasonic cleaning with methanol for 5 min, ultrasonic cleaning with isopropanol for 5 min, and finally rinsed repeatedly with deionized water. After drying, the silicon substrate was placed in the lining. On the base.
  • the vacuum chamber of the deposition system was evacuated to 8 ⁇ 10 -8 Torr, the chamber temperature was maintained to room temperature of 25 ° C, and the vacuum chamber pressure was maintained at 8 ⁇ 10 -8 Torr.
  • a single film of silicon is sputtered on a silicon substrate, the sputtering pressure is adjusted to 4 ⁇ 10 -4 Torr, the negative electrode bias voltage is 700 V, the sputtering gas is argon gas, the gas flow rate is 40 sccm, and the sputtering time is 50 min.
  • the thickness of the deposited film was measured to be 120 nm, and the deposition rate of the silicon film under the current parameters was calculated to be 2.4 nm/min.
  • Another new silicon substrate a single film of sputtering tantalum, the sputtering pressure is adjusted to 4 ⁇ 10 -4 Torr, the anode bias voltage is 700V, the sputtering gas is argon gas, the gas flow rate is 40sccm, sputtering At a time of 50 min, the thickness of the deposited film was measured to be 160 nm, and the deposition rate of the germanium film under the current parameters was calculated to be 3.2 nm/min.
  • a silicon germanium alloy film of different composition is deposited on a new silicon substrate, the sputtering pressure is adjusted to 4 ⁇ 10 -4 Torr, the anode bias voltage is 700V, and the sputtering gas is argon gas.
  • the flow rate was 40 sccm, the sputtering time was 50 min, and the thickness of the deposited film was 280 nm, and the mass ratio of the finally obtained silicon germanium alloy film was 3:4.
  • Magnetron sputtering deposition technology uses a ring-shaped magnetic field to control the plasma, which will cause the etching of the runway and cause the target utilization to be low.
  • the ion beam deposition technique emits the ion beam by tilting, resulting in a monolithic target. Inhomogeneous etching will also result in low target utilization, so both magnetron sputtering deposition and ion beam deposition will reduce the lifetime of the target.
  • the bias target ion beam deposition technique uses a method of controlling the plasma by applying a negative bias voltage to the target, which does not cause etched runway and uneven etching, and can effectively improve the target. Service life.
  • the escaping ion beam will cause sputtering of the vacuum chamber material, generate impurity ions, and contaminate the prepared film, while the bias target ion beam deposition technique
  • the emitted plasma energy is very low, and the escaping ion beam does not cause sputtering on the vacuum chamber, which improves the purity of the prepared film.
  • Offset target ion beam deposition technology By selecting an appropriate voltage value, by means of the influence of voltage on the sputtering ejection energy, the atomic mixing of the film interface and the overall roughness of the film can be effectively adjusted.
  • the bias target ion beam deposition technology can effectively overcome the shortcomings of magnetron sputtering deposition technology and ion beam deposition technology in the preparation of semiconductor films such as silicon germanium alloy, by controlling the bias voltage and deposition time in the silicon wafer.
  • the silicon germanium alloy film with different compositions is prepared, and the roughness of the prepared silicon germanium alloy film is reduced from 1.08 nm to 0.46 nm in the prior art, which is very important for the development of photoelectric MEMS.

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Abstract

一种半导体硅锗薄膜的制备方法，其包括如下步骤：对单晶硅基片进行清洗，清洗后置于衬底台上；分别进行溅射硅的单一薄膜和锗的单一薄膜；采用共溅法，在又一单晶硅基片沉积不同成分的硅锗合金薄膜，测得所沉积薄膜的厚度，得到具有不同成分比的硅锗合金薄膜。

Description

半导体硅锗薄膜的制备方法 技术领域
本发明涉及一种半导体薄膜，尤其涉及一种半导体硅锗薄膜，该半导体薄膜可应用于光电微机械电子系统领域中。
背景技术
硅和锗是电子传输器件中常用的两种半导体材料。由硅和锗两种材料构成的硅锗合金薄膜作为先进的硅系统材料，受到越来越广泛的应用。硅锗合金薄膜材料主要用来提高半导体器件中的电子和空穴迁移率，例如金属氧化物场效应管(Metal，Oxide Semiconductor Field Effect Transistor，MOSFET)，调制掺杂场效应管(Modulation Doped Field Effect Transistor，MODFET)和掺杂沟道场效应管(Doped Channel Field Effect Transistor，DCFET)等。另外，硅锗薄膜异质结构也被用于量子效应器件中，例如共振隧道二极管(Resonant Tunneling Diode，RTD)，它非常有希望成为下一代高速硅系统器件。
把硅锗半导体薄膜材料应用于光电微电子机械系统(Micro Electro Mechanical Systems，MEMS)领域有着巨大的需求，但是关于这方面的报道却很少。通过控制硅锗合金薄膜的成分可以控制它的某些性能，比如电学性能、机械性能以及光学性能等，这些性能对于光电MEMS来讲是非常重要的方面。为了更好的发挥MEMS光学方面的性能，制备高质量的硅锗薄膜以及了解它们的机械性能是非常有必要的。
现有的硅锗合金薄膜广泛采用电沉积、化学气相沉积、磁控溅射沉积技术和离子束沉积(Ion Beam Deposition，IBD)技术来进行制备，
电沉积的文献可以参考CN101880901B的中国发明专利《硅锗合金薄膜材料的制备方法》(专利号为ZL201010301123.0)。
化学气相沉积的文献可以参考CN104393121A的中国发明专利申请公开《掺氧非晶硅锗薄膜、异质结晶体硅太阳能电池及制备方法》(申请号为201410581435.X)。
磁控溅射沉积技术和离子束沉积都存在一定的局限性，主要体现在磁控溅射沉积技术会刻蚀跑道以及靶材表面容易产生中毒现象。而离子束沉积技术通过倾斜方式发射离子束，会降低靶材的使用寿命；逸出的离子束会对腔室材料形成溅射，污染所需要的硅锗薄膜：速率较低，对较厚的硅锗薄膜材料沉积困难。
光电MEMS要求相应的半导体薄膜材料具有优良的物理特性，而材料成分的不同深刻的影响着薄膜的各项性能。如何精确的控制薄膜的成分以及获得优异的物理性能是沉积半导体薄膜的关键技术。
文献1“Fabrication of silicon/germanium superlattice by ion beam sputtering，Vacuum， Vol.66，DEC 2011，p457-462.”公开了一种利用离子束沉积方法在硅基底上生长半导体硅锗薄膜的方法，沉积了300nm厚度的硅锗双分层薄膜，从给出的原子力显微镜三维图形中看出，它的粗糙度为1.08nm。
文献2“Structural and electrical studies of ultrathin layers with Si0.7Ge0.3nanocrystals confined in a SiGe/SiO2 superlattice，Journal of Applied Physics，Vol.111，OCT2012，p.104323-1--104323-4.”公开了一种利用射频磁控溅射沉积技术制备硅锗薄膜的方法，该方法利用共溅的方式，制备了较薄的硅锗薄膜，获得了较好的结构和电学特性，但是这一方式难以对薄膜的成分进行精确控制，同时靶材的利用率也不高，降低了靶材的寿命，不利于大规模推广应用。
磁控溅射沉积技术由于采用了环状磁场，会迫使二次电子跳栏式的沿着环状磁场转圈。相应的，环状磁场控制的区域是等离子体密度最高的部位，这样会在靶材上面溅射出一条环状的沟槽，造成刻蚀跑道的情况，沟槽一旦穿过靶材，就会使得整块靶材报废，因此会导致靶材的利用率不高，而磁控溅射沉积技术所采用的等离子体由于不稳定，会造成靶材表面的不均匀刻蚀，产生中毒现象，中毒区域溅射不可避免导致成膜掺杂，这样会降低所制备的薄膜的纯度。
离子束沉积技术通过倾斜方式发射离子束，造成整块靶材刻蚀不均匀，这样会降低靶材的使用寿命；离子束由于发生逸出现象，逸出的离子束会对真空腔室材料产生溅射作用，产生杂质离子，污染所制备的硅锗薄膜；由于离子束轰击到的靶材面积太小，造成沉积速率较低，对较厚的硅锗薄膜材料沉积困难。
发明内容
本发明所要解决的技术问题是针对上述的技术现状而提供一种利用偏置靶材离子束沉积实现半导体硅锗薄膜的制备方法。
本发明所要解决的又一个技术问题是靶材的使用寿命长的半导体硅锗薄膜的制备方法。
本发明所要解决的又一个技术问题是提高薄膜的纯度的半导体硅锗薄膜的制备方法。
本发明解决上述技术问题所采用的技术方案为：一种半导体硅锗薄膜的制备方法，其特征在于包括如下步骤；
①用丙酮对单晶硅基片进行超声清洗5～10min，然后用甲醇超声清洗5～10min，再次用异丙醇超声清洗5～10min，最后用去离子水反复冲洗，干燥后将单晶硅基片置于衬底台上；
②将沉积系统的真空室抽真空至8×10-8～9×10-8Torr，使腔室温度保持在室温20～30℃，并维持真空室压强维持在8×10-8～9×10-8Torr：
③在单晶硅基片上溅射硅的单一薄膜，溅射压强为4×10-4～5×10-4Torr，负极偏置电压为600～700V，溅射气体为氩气，气体流量为30sccm～50sccm，溅射时间30～50min，测得所沉积薄膜的厚度，计算得到当前参数下硅薄膜的沉积速率；
④另取一单晶硅基片，溅射锗的单一薄膜，溅射压强为4×10-4～5×10-4Torr，负极偏置电压为600～700V，溅射气体为氩气，气体流量为30sccm～50sccm，溅射时间30～50min，测得所沉积薄膜的厚度，计算得到当前参数下锗薄膜的沉积速率；
⑤采用共溅的方法，在又一单晶硅基片沉积不同成分的硅锗合金薄膜，溅射压强为4×10-4～5×10-4Torr，负极偏置电压为600～700V，溅射气体为氩气，气体流量为30sccm～50sccm，溅射时间为30～50min，测得所沉积薄膜的厚度，得到具有不同成分比的硅锗合金薄膜；
上述步骤③、步骤④和步骤⑤中的溅射压强、负极偏置电压、气体流量及溅射时间均保持一致。
作为优选，所述硅锗合金薄膜中硅锗质量配比为3∶4～2∶5。
作为优选，所述硅锗合金薄膜的厚度为64nm～280nm。
与现有技术相比，本发明的优点在于：采用偏置靶材离子束沉积，结合了离子束沉积技术和磁控溅射沉积技术的优点，能够有效克服磁控溅射沉积技术和离子束沉积技术两者的缺点，非常适合硅锗等半导体薄膜的制备。具体如下：
偏置靶材离子束沉积采用将靶材通上负偏置电压的方法来控制等离子体，不会造成刻蚀跑道和刻蚀不均匀的情况，能够有效提高靶材的使用寿命。
偏置靶材离子束沉积采用低能量的等离子体源，性能非常稳定，不会造成靶材表面的不均匀刻蚀，避免了中毒现象的发生，有效提高了所制备的薄膜的纯度。
偏置靶材离子束沉积由于发射的等离子体能量非常低，逸出的离子束不会对真空腔室产生溅射作用，提高了所制备薄膜的纯度。
偏置靶材离子束沉积在靶材附近安装了等离子护套，它能够加快正离子进入护套的速度，从而保证离子束轰击的面积大于靶材的面积，并且可以通过调节电压来调节沉积速率，能够获得较高的沉积速率，可以沉积较厚的薄膜材料。
偏置靶材离子束沉积通过选择合适的电压值，借助于电压对溅射弹射能量的影响，能够对薄膜交界面的原子混合以及薄膜的整体粗糙度进行有效的调节。
通过控制偏置电压和沉积时间，在硅片上制备具有不同成分的硅锗合金薄膜，所制备出的硅锗合金薄膜的粗糙度由现有技术的1.08nm减小到0.46nm。
附图说明
图1为实施例1中获得的硅锗合金薄膜在原子力显微镜测试下的表面二维显微照片。
图2为实施例1中获得的硅锗合金薄膜在原子力显微镜测试下的表面三维形貌图。
具体实施方式
以下结合附图实施例对本发明作进一步详细描述。
实施例1：
(1)首先用丙酮对单晶硅基片进行超声清洗10min，其次用甲醇超声清洗10min，再次用异丙醇超声清洗10min，最后用去离子水反复冲洗，干燥后将硅基片置于衬底台上。
(2)将沉积系统的真空室抽真空至9×10-8Torr，使腔室温度保持至室温25℃，并维持真空室压强维持在9×10-8Torr。
(3)在硅基片上溅射硅的单一薄膜，溅射压强调整为5×10-4Torr，负极偏置电压为600V，溅射气体为氩气，气体流量为40sccm，溅射时间30min，测得所沉积薄膜的厚度24nm，计算得到当前参数下硅薄膜的沉积速率0.8nm/min。
(4)另取新硅基片，溅射锗的单一薄膜，溅射压强调整为5×10-4Torr，负极偏置电压为600V，溅射气体为氩气，气体流量为40sccm，溅射时间30min，测得所沉积薄膜的厚度60nm，计算得到当前参数下锗薄膜的沉积速率2nm/min。
(5)采用共溅的方法，在新硅基片沉积不同成分的硅锗合金薄膜，溅射压强调整为5×10-4Torr，负极偏置电压为600V，溅射气体为氩气，气体流量为40sccm，溅射时间为30min测得所沉积薄膜的厚度为84nm，最终得到硅锗合金薄膜的质量比为2∶5。
结合图1和图2，采用原子力显微镜对本实施例制备的硅锗合金薄膜进行测量，从附图中可以看到均方根粗糙度为0.46nm。
实施例2：
(1)首先用丙酮对单晶硅基片进行超声清洗8min，其次用甲醇超声清洗8min，再次用异丙醇超声清洗8min，最后用去离子水反复冲洗，干燥后将硅基片置于衬底台上。
(2)将沉积系统的真空室抽真空至8×10-8Torr，使腔室温度保持至室温25℃，并维持真空室压强维持在8×10-8Torr。
(3)在硅基片上溅射硅的单一薄膜，溅射压强调整为4×10-4Torr，负极偏置电压为700V，溅射气体为氩气，气体流量为40sccm，溅射时间40min，测得所沉积薄膜的厚度64nm，计算得到当前参数下硅薄膜的沉积速率1.6nm/min。
(4)另取新硅基片，溅射锗的单一薄膜，溅射压强调整为4×10-4Torr，负极偏置电压为700V，溅射气体为氩气，气体流量为40sccm，溅射时间40min，测得所沉积薄膜的厚度128nm，计算得到当前参数下锗薄膜的沉积速率3.2nm/min。
(5)采用共溅的方法，在新硅基片沉积不同成分的硅锗合金薄膜，溅射压强调整为4×10-4Torr，负极偏置电压为700V，溅射气体为氩气，气体流量为40sccm，溅射时间为40min测得所沉积薄膜的厚度为192nm，最终得到的硅锗合金薄膜的质量比为2∶3。
实施例3：
(1)首先用丙酮对单晶硅基片进行超声清5min，其次用甲醇超声清洗5min，再次用异丙醇超声清洗5min，最后用去离子水反复冲洗，干燥后将硅基片置于衬底台上。
(2)将沉积系统的真空室抽真空至8×10-8Torr，使腔室温度保持至室温25℃，并维持真空室压强维持在8×10-8Torr。
(3)在硅基片上溅射硅的单一薄膜，溅射压强调整为4×10-4Torr，负极偏置电压为700V，溅射气体为氩气，气体流量为40sccm，溅射时间50min，测得所沉积薄膜的厚度120nm，计算得到当前参数下硅薄膜的沉积速率2.4nm/min。
(4)另取新硅基片，溅射锗的单一薄膜，溅射压强调整为4×10-4Torr，负极偏置电压为700V，溅射气体为氩气，气体流量为40sccm，溅射时间50min，测得所沉积薄膜的厚度160nm，计算得到当前参数下锗薄膜的沉积速率3.2nm/min。
(5)采用共溅的方法，在新硅基片沉积不同成分的硅锗合金薄膜，溅射压强调整为4×10-4Torr，负极偏置电压为700V，溅射气体为氩气，气体流量为40sccm，溅射时间为50min测得所沉积薄膜的厚度为280nm，最终得到的硅锗合金薄膜的质量比为3∶4。
通过以上实施例可以得出：
(1)磁控溅射沉积技术采用环状磁场来控制等离子体，会造成刻蚀跑道的情况，造成靶材利用率偏低，而离子束沉积技术通过倾斜方式发射离子束，造成整块靶材刻蚀不均匀，也会造成靶材利用率偏低，因此磁控溅射沉积技术和离子束沉积技术均会降低靶材的使用寿命。相比而言，偏置靶材离子束沉积技术采用将靶材通上负偏置电压的方法来控制等离子体，不会造成刻蚀跑道和刻蚀不均匀的情况，能够有效提高靶材的使用寿命。
(2)磁控溅射沉积技术所采用的等离子体由于不稳定，会造成靶材表面的不均匀刻蚀，产生中毒现象，中毒区域溅射不可避免导致成膜掺杂，这样会降低所制备的薄膜的纯度，而偏置靶材离子束沉积技术采用低能量的等离子体源，性能非常稳定，不会造成靶材表面的不均匀刻蚀，避免了中毒现象的发生，有效提高了所制备的薄膜的纯度。
(3)离子束沉积技术由于会发生逸出现象，逸出的离子束会对真空腔室材料产生溅射作用，产生杂质离子，污染所制备的薄膜，而偏置靶材离子束沉积技术由于发射的等离子体能量非常低，逸出的离子束不会对真空腔室产生溅射作用，提高了所制备薄膜的纯度。
(4)离子束沉积技术由于离子束轰击到的靶材面积太小，会造成沉积速率较低，对较厚的薄膜材料沉积困难，而偏置靶材离子束沉积技术在靶材附近安装了等离子护套，它能够加快正离子进入护套的速度，从而保证离子束轰击的面积大于靶材的面积，并且可以通过调节电压来调节沉积速率，能够获得较高的沉积速率，可以沉积较厚的薄膜材料。
(5)偏置靶材离子束沉积技术通过选择合适的电压值，借助于电压对溅射弹射能量的影响，能够对薄膜交界面的原子混合以及薄膜的整体粗糙度进行有效的调节。
由上可知，偏置靶材离子束沉积技术能够有效克服磁控溅射沉积技术和离子束沉积技术在制备硅锗合金等半导体薄膜方面的不足，通过控制偏置电压和沉积时间，在硅片上制备具有不同成分的硅锗合金薄膜，所制备出的硅锗合金薄膜的粗糙度由现有技术的1.08nm减小到0.46nm，这对光电MEMS的发展具有非常重要的意义。

Claims (3)

  1. 一种半导体硅锗薄膜的制备方法，其特征在于包括如下步骤：
    ①用丙酮对单晶硅基片进行超声清洗5～10min，然后用甲醇超声清洗5～10min，再次用异丙醇超声清洗5～10min，最后用去离子水反复冲洗，干燥后将单晶硅基片置于衬底台上；
    ②将沉积系统的真空室抽真空至8×10-8～9×10-8Torr，使腔室温度保持在室温20～30℃，并维持真空室压强维持在8×10-8～9×10-8Torr；
    ③在单晶硅基片上溅射硅的单一薄膜，溅射压强为4×10-4～5×10-4Torr，负极偏置电压为600～700V，溅射气体为氩气，气体流量为30sccm～50sccm，溅射时间30～50min，测得所沉积薄膜的厚度，计算得到当前参数下硅薄膜的沉积速率；
    ④另取一单晶硅基片，溅射锗的单一薄膜，溅射压强为4×10-4～5×10-4Torr，负极偏置电压为600～700V，溅射气体为氩气，气体流量为30sccm～50sccm，溅射时间30～50min，测得所沉积薄膜的厚度，计算得到当前参数下锗薄膜的沉积速率；
    ⑤采用共溅的方法，在又一单晶硅基片沉积不同成分的硅锗合金薄膜，溅射压强为4×10-4～5×10-4Torr，负极偏置电压为600～700V，溅射气体为氩气，气体流量为30sccm～50sccm，溅射时间为30～50min，测得所沉积薄膜的厚度，得到具有不同成分比的硅锗合金薄膜；
    上述步骤③、步骤④和步骤⑤中的溅射压强、负极偏置电压、气体流量及溅射时间均保持一致。
  2. 根据权利要求1所述的半导体硅锗薄膜的制备方法，其特征在于所述硅锗合金薄膜中硅锗质量配比为3∶4～2∶5。
  3. 根据权利要求1所述的半导体硅锗薄膜的制备方法，其特征在于所述硅锗合金薄膜的厚度为64nm～280nm。
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