CN105074574B - Euv光刻装置的照明系统及其分面反射镜 - Google Patents

Euv光刻装置的照明系统及其分面反射镜 Download PDF

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Publication number
CN105074574B
CN105074574B CN201480009868.6A CN201480009868A CN105074574B CN 105074574 B CN105074574 B CN 105074574B CN 201480009868 A CN201480009868 A CN 201480009868A CN 105074574 B CN105074574 B CN 105074574B
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China
Prior art keywords
facet
speculum
euv
illuminator
elements
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CN201480009868.6A
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Chinese (zh)
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CN105074574A (zh
Inventor
J.劳夫
I.萨恩格
J.齐默尔曼
D.克雷默
C.亨纳克斯
F.施莱塞纳
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0933—Systems for active beam shaping by rapid movement of an element
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0977—Reflective elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201480009868.6A 2013-02-22 2014-02-11 Euv光刻装置的照明系统及其分面反射镜 Active CN105074574B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361767986P 2013-02-22 2013-02-22
DE102013202948.9A DE102013202948A1 (de) 2013-02-22 2013-02-22 Beleuchtungssystem für eine EUV-Lithographievorrichtung und Facettenspiegel dafür
US61/767,986 2013-02-22
DE102013202948.9 2013-02-22
PCT/EP2014/052639 WO2014128025A1 (en) 2013-02-22 2014-02-11 Illumination system for an euv lithography device and facet mirror therefor

Publications (2)

Publication Number Publication Date
CN105074574A CN105074574A (zh) 2015-11-18
CN105074574B true CN105074574B (zh) 2017-07-04

Family

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CN201480009868.6A Active CN105074574B (zh) 2013-02-22 2014-02-11 Euv光刻装置的照明系统及其分面反射镜

Country Status (6)

Country Link
US (1) US9551941B2 (enExample)
JP (1) JP6285965B2 (enExample)
KR (1) KR102179256B1 (enExample)
CN (1) CN105074574B (enExample)
DE (1) DE102013202948A1 (enExample)
WO (1) WO2014128025A1 (enExample)

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DE102006020734A1 (de) * 2006-05-04 2007-11-15 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem
CN105511231B (zh) * 2014-10-16 2019-03-29 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置
DE102016217479A1 (de) * 2016-09-14 2017-09-14 Carl Zeiss Smt Gmbh Optisches modul mit verkippbaren optischen flächen
DE102017211443A1 (de) * 2017-07-05 2019-01-10 Carl Zeiss Smt Gmbh Metrologiesystem mit einer EUV-Optik
DE102018220625A1 (de) * 2018-11-29 2020-06-04 Carl Zeiss Smt Gmbh Optisches Beleuchtungssystem für Projektionslithographie
DE102019213063A1 (de) 2019-08-30 2021-03-04 Carl Zeiss Smt Gmbh Optische Beugungskomponente
DE102019129135A1 (de) * 2019-10-29 2021-04-29 Zumtobel Lighting Gmbh 3D-Druckverfahren zur Herstellung eines Leuchtenelements mit optischem Teil
DE102019131327A1 (de) * 2019-11-20 2021-05-20 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Messung von Substraten für die Halbleiterlithographie
DE102020200158A1 (de) * 2020-01-09 2021-07-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102021214237A1 (de) 2021-12-13 2022-12-22 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine EUV-Projektionsbelichtungsanlage
EP4386479A1 (en) * 2022-12-12 2024-06-19 ASML Netherlands B.V. Lithographic apparatus and associated method
DE102023209697A1 (de) * 2023-10-04 2025-04-10 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie Verfahren zur Vermessung einer Abhängigkeit einer Intensität von auf ein Objektfeld auftreffendem Beleuchtungslicht von mindestens einer Detektions-Objektfeldkoordinate unter Nutzung einer derartigen Beleuchtungsoptik
WO2025146282A1 (en) * 2024-01-05 2025-07-10 Asml Netherlands B.V. Lithographic apparatus and associated method
EP4592749A1 (en) * 2024-01-23 2025-07-30 ASML Netherlands B.V. Lithographic apparatus and associated method

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Also Published As

Publication number Publication date
JP2016513281A (ja) 2016-05-12
DE102013202948A1 (de) 2014-09-11
KR20150121702A (ko) 2015-10-29
KR102179256B1 (ko) 2020-11-18
US9551941B2 (en) 2017-01-24
CN105074574A (zh) 2015-11-18
WO2014128025A1 (en) 2014-08-28
JP6285965B2 (ja) 2018-02-28
US20160004164A1 (en) 2016-01-07

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