ATE358291T1 - Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem - Google Patents
Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystemInfo
- Publication number
- ATE358291T1 ATE358291T1 AT03790838T AT03790838T ATE358291T1 AT E358291 T1 ATE358291 T1 AT E358291T1 AT 03790838 T AT03790838 T AT 03790838T AT 03790838 T AT03790838 T AT 03790838T AT E358291 T1 ATE358291 T1 AT E358291T1
- Authority
- AT
- Austria
- Prior art keywords
- extreme
- lithography system
- spectral filter
- grid based
- ultraviolet lithography
- Prior art date
Links
- 238000001900 extreme ultraviolet lithography Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
- 230000003595 spectral effect Effects 0.000 title 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
- G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
- G02B27/4244—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application in wavelength selecting devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Optical Filters (AREA)
- Jet Pumps And Other Pumps (AREA)
- Display Devices Of Pinball Game Machines (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10239732 | 2002-08-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE358291T1 true ATE358291T1 (de) | 2007-04-15 |
Family
ID=31969003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03790838T ATE358291T1 (de) | 2002-08-26 | 2003-07-30 | Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem |
Country Status (8)
Country | Link |
---|---|
US (1) | US7319509B2 (de) |
EP (1) | EP1540423B1 (de) |
JP (1) | JP2005536900A (de) |
AT (1) | ATE358291T1 (de) |
AU (1) | AU2003251669A1 (de) |
DE (1) | DE60312871T2 (de) |
TW (1) | TWI318776B (de) |
WO (1) | WO2004021086A1 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1517183A1 (de) * | 2003-08-29 | 2005-03-23 | ASML Netherlands B.V. | Lithographischer Apparat, Verfahren zur Herstellung eines Artikels und damit erzeugter Artikel |
US8094288B2 (en) | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4518078B2 (ja) * | 2004-09-22 | 2010-08-04 | 株式会社ニコン | 照明装置、露光装置及びマイクロデバイスの製造方法 |
JP4844398B2 (ja) * | 2004-11-17 | 2011-12-28 | 株式会社ニコン | 照明装置、露光装置及びマイクロデバイスの製造方法 |
JP4710406B2 (ja) * | 2005-04-28 | 2011-06-29 | ウシオ電機株式会社 | 極端紫外光露光装置および極端紫外光光源装置 |
US7695646B2 (en) | 2005-11-23 | 2010-04-13 | Hewlett-Packard Development Company, L.P. | Composite material with electromagnetically reactive cells and quantum dots |
US20080259298A1 (en) * | 2007-04-19 | 2008-10-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9475611B2 (en) | 2007-04-19 | 2016-10-25 | Anheuser-Busch Inbev S.A. | Integrally blow-moulded bag-in-container having interface vents opening to the atmosphere at location adjacent to bag's mouth, preform for making it; and processes for producing the preform and bag-in-container |
US20080257883A1 (en) | 2007-04-19 | 2008-10-23 | Inbev S.A. | Integrally blow-moulded bag-in-container having an inner layer and the outer layer made of the same material and preform for making it |
JP5077724B2 (ja) | 2007-06-07 | 2012-11-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィツール用の反射照明システム |
KR20090002581A (ko) * | 2007-07-02 | 2009-01-09 | 삼성전기주식회사 | 잡광 제거 장치 |
NL1036162A1 (nl) * | 2007-11-28 | 2009-06-02 | Asml Netherlands Bv | Lithographic apparatus and method. |
DE102008000788A1 (de) * | 2008-03-20 | 2009-09-24 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage |
DE102008017645A1 (de) | 2008-04-04 | 2009-10-08 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats |
JP5475756B2 (ja) * | 2008-05-30 | 2014-04-16 | エーエスエムエル ネザーランズ ビー.ブイ. | スペクトル純度フィルタを形成する方法 |
DE102009044462A1 (de) | 2009-11-06 | 2011-01-05 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage |
DE102010002822A1 (de) | 2010-03-12 | 2011-09-15 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage |
DE102011015141A1 (de) * | 2011-03-16 | 2012-09-20 | Carl Zeiss Laser Optics Gmbh | Verfahren zum Herstellen eines reflektiven optischen Bauelements für eine EUV-Projektionsbelichtungsanlage und derartiges Bauelement |
US9372413B2 (en) * | 2011-04-15 | 2016-06-21 | Asml Netherlands B.V. | Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices |
JP5953656B2 (ja) * | 2011-05-09 | 2016-07-20 | 株式会社ニコン | 照明光学装置、露光装置、及びデバイス製造方法 |
TWI596384B (zh) * | 2012-01-18 | 2017-08-21 | Asml荷蘭公司 | 光源收集器元件、微影裝置及元件製造方法 |
JP2015510688A (ja) * | 2012-01-19 | 2015-04-09 | スプリヤ ジャイスワル | リソグラフィ及び他の用途における極端紫外線放射で使用する材料、成分及び方法 |
US10838123B2 (en) | 2012-01-19 | 2020-11-17 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
DE102012201497A1 (de) | 2012-02-02 | 2013-01-17 | Carl Zeiss Smt Gmbh | Kollektor mit einem Beugungsgitter |
DE102012010093A1 (de) | 2012-05-23 | 2013-11-28 | Carl Zeiss Smt Gmbh | Facettenspiegel |
DE102012220465A1 (de) * | 2012-11-09 | 2014-05-15 | Carl Zeiss Smt Gmbh | EUV-Kollektor |
US9151881B2 (en) | 2012-11-12 | 2015-10-06 | Kla-Tencor Corporation | Phase grating for mask inspection system |
KR102278351B1 (ko) | 2013-01-28 | 2021-07-19 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치를 위한 방사선 소스, 거울 및 투영 시스템 |
DE102013202948A1 (de) * | 2013-02-22 | 2014-09-11 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für eine EUV-Lithographievorrichtung und Facettenspiegel dafür |
US10209526B2 (en) | 2014-01-20 | 2019-02-19 | Yakov Soskind | Electromagnetic radiation enhancement methods and systems |
KR102295496B1 (ko) | 2014-09-29 | 2021-09-01 | 매직 립, 인코포레이티드 | 상이한 파장의 광을 도파관 밖으로 출력하기 위한 아키텍쳐 및 방법 |
WO2017032569A1 (en) * | 2015-08-25 | 2017-03-02 | Asml Netherlands B.V. | Suppression filter, radiation collector and radiation source for a lithographic apparatus; method of determining a separation distance between at least two reflective surface levels of a suppression filter |
NL2017275A (en) * | 2015-09-03 | 2017-03-08 | Asml Netherlands Bv | Beam splitting apparatus |
US9904058B2 (en) | 2016-05-12 | 2018-02-27 | Magic Leap, Inc. | Distributed light manipulation over imaging waveguide |
DE102017204312A1 (de) | 2016-05-30 | 2017-11-30 | Carl Zeiss Smt Gmbh | Optische Wellenlängen-Filterkomponente für ein Lichtbündel |
DE102018212224A1 (de) | 2018-07-23 | 2020-01-23 | Carl Zeiss Smt Gmbh | Vorrichtung zur Rückkopplung von emittierter Strahlung in eine Laserquelle |
DE102019210450A1 (de) * | 2019-07-16 | 2021-01-21 | Carl Zeiss Smt Gmbh | Optische Beugungskomponente zur Unterdrückung mindestens einer Ziel-Wellenlänge durch destruktive Interferenz |
TWI831898B (zh) | 2019-01-15 | 2024-02-11 | 德商卡爾蔡司Smt有限公司 | 藉由破壞性干涉抑制至少一目標波長的光學繞射元件 |
DE102019200376A1 (de) | 2019-01-15 | 2020-07-16 | Carl Zeiss Smt Gmbh | Optische Beugungskomponente zur Unterdrückung mindestens einer Ziel-Wellenlänge durch destruktive Interferenz |
DE102019213063A1 (de) | 2019-08-30 | 2021-03-04 | Carl Zeiss Smt Gmbh | Optische Beugungskomponente |
DE102020207807A1 (de) * | 2020-06-24 | 2021-12-30 | Carl Zeiss Smt Gmbh | Optisches Element für eine EUV-Projektionsbelichtungsanlage |
DE102021210671A1 (de) | 2021-09-24 | 2022-12-01 | Carl Zeiss Smt Gmbh | Intensitätsanpassungsfilter für eine optische anordnung und optische anordnung mit einem entsprechenden intensitätsanpassungsfilter sowie verfahren zu dessen herstellung |
DE102022214434A1 (de) | 2022-01-17 | 2023-07-20 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung einer optischen Gitterstruktur zur gezielten Beugung von Licht mindestens einer Ziel-Wellenlänge |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07301696A (ja) | 1994-05-09 | 1995-11-14 | Hitachi Ltd | X線投影露光方法及び装置 |
DE10138313A1 (de) | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
US6438199B1 (en) | 1998-05-05 | 2002-08-20 | Carl-Zeiss-Stiftung | Illumination system particularly for microlithography |
US6118577A (en) | 1998-08-06 | 2000-09-12 | Euv, L.L.C | Diffractive element in extreme-UV lithography condenser |
US6469827B1 (en) * | 1998-08-06 | 2002-10-22 | Euv Llc | Diffraction spectral filter for use in extreme-UV lithography condenser |
US6100978A (en) | 1998-10-21 | 2000-08-08 | Naulleau; Patrick P. | Dual-domain point diffraction interferometer |
DE59914179D1 (de) | 1999-02-15 | 2007-03-22 | Zeiss Carl Smt Ag | Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
US6867913B2 (en) | 2000-02-14 | 2005-03-15 | Carl Zeiss Smt Ag | 6-mirror microlithography projection objective |
US6795481B2 (en) | 2000-03-22 | 2004-09-21 | California Institute Of Technology | Non-spherical whispering-gallery-mode microcavity |
KR100931335B1 (ko) | 2000-09-29 | 2009-12-11 | 칼 짜이스 에스엠티 아게 | 격자 엘리먼트를 구비한 조명 시스템 |
US6522465B1 (en) * | 2001-09-27 | 2003-02-18 | Intel Corporation | Transmitting spectral filtering of high power extreme ultra-violet radiation |
-
2003
- 2003-07-30 WO PCT/EP2003/008413 patent/WO2004021086A1/en active IP Right Grant
- 2003-07-30 EP EP03790838A patent/EP1540423B1/de not_active Expired - Lifetime
- 2003-07-30 AU AU2003251669A patent/AU2003251669A1/en not_active Abandoned
- 2003-07-30 AT AT03790838T patent/ATE358291T1/de not_active IP Right Cessation
- 2003-07-30 JP JP2004531839A patent/JP2005536900A/ja active Pending
- 2003-07-30 DE DE60312871T patent/DE60312871T2/de not_active Expired - Lifetime
- 2003-07-31 TW TW092121069A patent/TWI318776B/zh not_active IP Right Cessation
-
2005
- 2005-02-24 US US11/064,594 patent/US7319509B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2005536900A (ja) | 2005-12-02 |
US20050275818A1 (en) | 2005-12-15 |
DE60312871T2 (de) | 2007-12-20 |
US7319509B2 (en) | 2008-01-15 |
DE60312871D1 (de) | 2007-05-10 |
TWI318776B (en) | 2009-12-21 |
WO2004021086A1 (en) | 2004-03-11 |
EP1540423B1 (de) | 2007-03-28 |
EP1540423A1 (de) | 2005-06-15 |
TW200406822A (en) | 2004-05-01 |
AU2003251669A1 (en) | 2004-03-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |