DE60312871D1 - Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem - Google Patents

Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem

Info

Publication number
DE60312871D1
DE60312871D1 DE60312871T DE60312871T DE60312871D1 DE 60312871 D1 DE60312871 D1 DE 60312871D1 DE 60312871 T DE60312871 T DE 60312871T DE 60312871 T DE60312871 T DE 60312871T DE 60312871 D1 DE60312871 D1 DE 60312871D1
Authority
DE
Germany
Prior art keywords
lithography system
spectral filter
grid based
ultraviolet lithography
radiation outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60312871T
Other languages
English (en)
Other versions
DE60312871T2 (de
Inventor
Wolfgang Singer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of DE60312871D1 publication Critical patent/DE60312871D1/de
Application granted granted Critical
Publication of DE60312871T2 publication Critical patent/DE60312871T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4244—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application in wavelength selecting devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
DE60312871T 2002-08-26 2003-07-30 Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem Expired - Lifetime DE60312871T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10239732 2002-08-26
DE10239732 2002-08-26
PCT/EP2003/008413 WO2004021086A1 (en) 2002-08-26 2003-07-30 Grating based spectral filter for eliminating out of band radiation in an extreme ultra-violet lithography system

Publications (2)

Publication Number Publication Date
DE60312871D1 true DE60312871D1 (de) 2007-05-10
DE60312871T2 DE60312871T2 (de) 2007-12-20

Family

ID=31969003

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60312871T Expired - Lifetime DE60312871T2 (de) 2002-08-26 2003-07-30 Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem

Country Status (8)

Country Link
US (1) US7319509B2 (de)
EP (1) EP1540423B1 (de)
JP (1) JP2005536900A (de)
AT (1) ATE358291T1 (de)
AU (1) AU2003251669A1 (de)
DE (1) DE60312871T2 (de)
TW (1) TWI318776B (de)
WO (1) WO2004021086A1 (de)

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US8094288B2 (en) 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101273740B1 (ko) * 2004-09-22 2013-06-12 가부시키가이샤 니콘 조명 장치, 노광 장치 및 마이크로 디바이스의 제조 방법
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US7695646B2 (en) 2005-11-23 2010-04-13 Hewlett-Packard Development Company, L.P. Composite material with electromagnetically reactive cells and quantum dots
US9475611B2 (en) 2007-04-19 2016-10-25 Anheuser-Busch Inbev S.A. Integrally blow-moulded bag-in-container having interface vents opening to the atmosphere at location adjacent to bag's mouth, preform for making it; and processes for producing the preform and bag-in-container
US20080259298A1 (en) * 2007-04-19 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080257883A1 (en) 2007-04-19 2008-10-23 Inbev S.A. Integrally blow-moulded bag-in-container having an inner layer and the outer layer made of the same material and preform for making it
KR101422882B1 (ko) 2007-06-07 2014-07-23 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 도구를 위한 반사 일루미네이션 시스템
KR20090002581A (ko) * 2007-07-02 2009-01-09 삼성전기주식회사 잡광 제거 장치
NL1036162A1 (nl) * 2007-11-28 2009-06-02 Asml Netherlands Bv Lithographic apparatus and method.
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DE102008017645A1 (de) 2008-04-04 2009-10-08 Carl Zeiss Smt Ag Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats
NL2002838A1 (nl) * 2008-05-30 2009-12-01 Asml Netherlands Bv Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for a radiation system and method of forming a spectral purity filter.
DE102009044462A1 (de) 2009-11-06 2011-01-05 Carl Zeiss Smt Ag Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage
DE102010002822A1 (de) 2010-03-12 2011-09-15 Carl Zeiss Smt Gmbh Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
DE102011015141A1 (de) * 2011-03-16 2012-09-20 Carl Zeiss Laser Optics Gmbh Verfahren zum Herstellen eines reflektiven optischen Bauelements für eine EUV-Projektionsbelichtungsanlage und derartiges Bauelement
US9372413B2 (en) * 2011-04-15 2016-06-21 Asml Netherlands B.V. Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices
JP5953656B2 (ja) * 2011-05-09 2016-07-20 株式会社ニコン 照明光学装置、露光装置、及びデバイス製造方法
TWI596384B (zh) * 2012-01-18 2017-08-21 Ａｓｍｌ荷蘭公司 光源收集器元件、微影裝置及元件製造方法
KR101930926B1 (ko) * 2012-01-19 2019-03-11 수프리야 자이스왈 리소그래피 및 다른 적용분야에서 극자외 방사선을 이용하는 재료, 성분 및 사용을 위한 방법
US10838123B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
DE102012201497A1 (de) 2012-02-02 2013-01-17 Carl Zeiss Smt Gmbh Kollektor mit einem Beugungsgitter
DE102012010093A1 (de) * 2012-05-23 2013-11-28 Carl Zeiss Smt Gmbh Facettenspiegel
DE102012220465A1 (de) * 2012-11-09 2014-05-15 Carl Zeiss Smt Gmbh EUV-Kollektor
US9151881B2 (en) 2012-11-12 2015-10-06 Kla-Tencor Corporation Phase grating for mask inspection system
JP6438412B2 (ja) 2013-01-28 2018-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のための投影システム、ミラーおよび放射源
DE102013202948A1 (de) * 2013-02-22 2014-09-11 Carl Zeiss Smt Gmbh Beleuchtungssystem für eine EUV-Lithographievorrichtung und Facettenspiegel dafür
US10209526B2 (en) 2014-01-20 2019-02-19 Yakov Soskind Electromagnetic radiation enhancement methods and systems
US10261318B2 (en) 2014-09-29 2019-04-16 Magic Leap, Inc. Architectures and methods for outputting different wavelength light out of waveguides
NL2017272A (en) * 2015-08-25 2017-03-01 Asml Netherlands Bv Suppression filter, radiation collector and radiation source for a lithographic apparatus; method of determining a separation distance between at least two reflective surface levels of a suppression filter
US11112618B2 (en) * 2015-09-03 2021-09-07 Asml Netherlands B.V. Beam splitting apparatus
CA3023539A1 (en) 2016-05-12 2017-11-16 Magic Leap, Inc. Distributed light manipulation over imaging waveguide
DE102017204312A1 (de) 2016-05-30 2017-11-30 Carl Zeiss Smt Gmbh Optische Wellenlängen-Filterkomponente für ein Lichtbündel
DE102018212224A1 (de) 2018-07-23 2020-01-23 Carl Zeiss Smt Gmbh Vorrichtung zur Rückkopplung von emittierter Strahlung in eine Laserquelle
DE102019210450A1 (de) * 2019-07-16 2021-01-21 Carl Zeiss Smt Gmbh Optische Beugungskomponente zur Unterdrückung mindestens einer Ziel-Wellenlänge durch destruktive Interferenz
TWI831898B (zh) 2019-01-15 2024-02-11 德商卡爾蔡司Ｓｍｔ有限公司 藉由破壞性干涉抑制至少一目標波長的光學繞射元件
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Also Published As

Publication number Publication date
AU2003251669A1 (en) 2004-03-19
US20050275818A1 (en) 2005-12-15
EP1540423A1 (de) 2005-06-15
WO2004021086A1 (en) 2004-03-11
JP2005536900A (ja) 2005-12-02
US7319509B2 (en) 2008-01-15
DE60312871T2 (de) 2007-12-20
TWI318776B (en) 2009-12-21
EP1540423B1 (de) 2007-03-28
TW200406822A (en) 2004-05-01
ATE358291T1 (de) 2007-04-15

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Owner name: CARL ZEISS SMT GMBH, 73447 OBERKOCHEN, DE