CN105047790A - Practical high-power LED encapsulation structure - Google Patents
Practical high-power LED encapsulation structure Download PDFInfo
- Publication number
- CN105047790A CN105047790A CN201510498407.6A CN201510498407A CN105047790A CN 105047790 A CN105047790 A CN 105047790A CN 201510498407 A CN201510498407 A CN 201510498407A CN 105047790 A CN105047790 A CN 105047790A
- Authority
- CN
- China
- Prior art keywords
- wire
- copper
- layer
- power led
- encapsulation structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 30
- 239000010949 copper Substances 0.000 claims abstract description 30
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 13
- 239000011733 molybdenum Substances 0.000 claims abstract description 13
- 238000003466 welding Methods 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000002196 Pyroceram Substances 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 238000009826 distribution Methods 0.000 abstract description 6
- 238000000605 extraction Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000002241 glass-ceramic Substances 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a practical high-power LED encapsulation structure. The practical high-power LED encapsulation structure comprises a flip chip, an insulating layer, an electric conduction layer and an optical lens; a copper layer is arranged on a soft weldable bottom layer; a molybdenum layer is arranged on the copper layer; a copper layer is arranged on the molybdenum layer; high temperature resistant glass is arranged at one side of the upper part of the copper layer; an electric conduction base layer is arrange at the other side of the upper part of the copper layer; a wire is arranged at one side of the upper part of the high temperature resistant glass; the flip chip is arranged at the other side of the upper part of the high temperature resistant glass; low temperature glass ceramic is arranged on the wire; the optical lens is arranged outside the flip chip; and the insulating layer is arranged on the electric conduction base layer; a wire is arranged on the insulating layer; and a welding point is above the wire. The practical high-power LED encapsulation structure has the advantages of excellent heat dissipation performance, reduced chip junction temperature, improved LED performance, improved light extraction efficiency, optimized light beam distribution and high reliability.
Description
Technical field
The invention belongs to LED technical field, be specifically related to a kind of high-power LED encapsulation structure of practicality.
Background technology
Along with the raising of semi-conducting material and packaging technology, luminous flux and the light extraction efficiency of LED improve gradually, thus make solid light source become possibility, the special lighting fields such as traffic lights, automotive lighting, billboard are widely used in, and gradually to the transition of general lighting field, be acknowledged as the forth generation light source being expected to replace incandescent lamp, fluorescent lamp.Different application field proposes requirements at the higher level to LED light source, except to LED light extraction efficiency, photochromicly have different requirements, and have different requirements to rising angle, light distribution.This not only needs upstream chip factory to develop new semi-conducting material, improve chip fabrication technique, design the chip met the demands, and requirements at the higher level are proposed to downstream encapsulation factory, design the encapsulating structure of satisfied certain light distribution, improve the light utilization efficiency of LED outside.LED refers to the encapsulation of luminescence chip, and comparing integrated antenna package has relatively big difference.The encapsulation of LED not only requirement can protect wick, but also can printing opacity.So the encapsulation of LED has special requirement to encapsulating material.High-power LED encapsulation is complicated due to Structure and energy, and directly has influence on serviceability and the life-span of LED, is the focus that study hotspot in recent years, particularly large power white light LED encapsulate in study hotspot especially always.Through development for many years, Chinese LED industry has been tending towards ripe, and the positive mistake of LED enterprise can be gone on the market in recent years, and under the demand power-assisted of capital market and the sustainable growth of downstream application industry, Enlargement of Enterprise Scale speed is accelerated, and production capacity grows at top speed.But still there is a lot of problem, technology is unable to catch up with developed country, innovation is not enough, lacks the product of applicable great power LED, is unfavorable for the external popularization of product.
Summary of the invention
Object of the present invention is just the high-power LED encapsulation structure providing a kind of practicality in order to solve the problem.
The present invention is achieved through the following technical solutions above-mentioned purpose:
A kind of high-power LED encapsulation structure of practicality, comprise upside-down mounting welding core, insulating barrier, conductive substrate and optical lens, layers of copper is provided with above solderable bottom, molybdenum layer is provided with above described layers of copper, described layers of copper is provided with above described molybdenum layer, pyroceram is provided with at the upper side of described layers of copper, opposite side is provided with described conductive substrate, wire is provided with at the upper side of described pyroceram, opposite side is provided with described upside-down mounting welding core, low temperature glass pottery is provided with above described wire, described upside-down mounting welding core outer setting has described optical lens, described insulating barrier is provided with above described conductive substrate, described wire is provided with above described insulating barrier, solder joint is provided with above described wire.
As preferred version of the present invention, described layers of copper is connected with described solderable bottom, and described molybdenum layer is clipped between upper and lower two described layers of copper.
As preferred version of the present invention, described pyroceram is connected with described layers of copper, and described conductive substrate is connected with described layers of copper.
As preferred version of the present invention, described wire is connected with described pyroceram, and described low temperature glass pottery is connected with described wire.
As preferred version of the present invention, described insulating barrier is connected with described conductive substrate, and described wire is connected with described insulating barrier, and described solder joint is connected with described wire.
Beneficial effect of the present invention is: perfect heat-dissipating, reduces junction temperature of chip, improves LED performance; Improve light extraction efficiency, optimize beam distribution; There is stronger reliability.
Accompanying drawing explanation
Fig. 1 is the structure chart of the high-power LED encapsulation structure of a kind of practicality of the present invention.
In figure: 1, low temperature glass pottery; 2, pyroceram; 3, layers of copper; 4, upside-down mounting welding core; 5, solderable bottom; 6, molybdenum layer; 7, conductive substrate; 8, insulating barrier; 9, wire; 10, solder joint; 11, optical lens.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
As shown in Figure 1, a kind of high-power LED encapsulation structure of practicality, comprise upside-down mounting welding core 4, insulating barrier 8, conductive substrate 7 and optical lens 11, layers of copper 3 is provided with above solderable bottom 5, molybdenum layer 6 is provided with above layers of copper 3, the heat that molybdenum layer 6 produces for absorbing chip, layers of copper 3 is provided with above molybdenum layer 6, pyroceram 2 is provided with at the upper side of layers of copper 3, the high temperature that pyroceram 2 produces when can bear LED work, opposite side is provided with conductive substrate 7, conductive substrate 7 is for conduction, wire 9 is provided with at the upper side of pyroceram 2, wire 9 is for conduction, opposite side is provided with upside-down mounting welding core 4, upside-down mounting welding core 4 is a kind of chip interconnects technology, it is again a kind of desirable die bonding technology, low temperature glass pottery 1 is provided with above wire 9, upside-down mounting welding core 4 outer setting has optical lens 11, optical lens 11 can become LED integrated optical source distribution curve flux the distribution curve flux of needs, insulating barrier 8 is provided with above conductive substrate 7, insulating barrier 8 refers to the insulation material layer between heating-wire, being mainly used in isolation electric wire, to prevent people from getting an electric shock injured, wire 9 is provided with above insulating barrier 8, solder joint 10 is provided with above wire 9.
As preferred version of the present invention, layers of copper 3 is connected with solderable bottom 5, molybdenum layer 6 is clipped between upper and lower two layers of copper 3, pyroceram 2 is connected with layers of copper 3, and conductive substrate 7 is connected with layers of copper 3, and wire 9 is connected with pyroceram 2, low temperature glass pottery 1 is connected with wire 9, insulating barrier 8 is connected with conductive substrate 7, and wire 9 is connected with insulating barrier 8, and solder joint 10 is connected with wire 9.
More than show and describe general principle of the present invention, principal character and advantage.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and effect thing thereof.
Claims (5)
1. a practical high-power LED encapsulation structure, it is characterized in that: comprise upside-down mounting welding core (4), insulating barrier (8), conductive substrate (7) and optical lens (11), solderable bottom (5) top is provided with layers of copper (3), described layers of copper (3) top is provided with molybdenum layer (6), described molybdenum layer (6) top is provided with described layers of copper (3), described layers of copper (3) upper side is provided with pyroceram (2), opposite side is provided with described conductive substrate (7), described pyroceram (2) upper side is provided with wire (9), opposite side is provided with described upside-down mounting welding core (4), described wire (9) top is provided with low temperature glass pottery (1), described upside-down mounting welding core (4) outer setting has described optical lens (11), described conductive substrate (7) top is provided with described insulating barrier (8), described insulating barrier (8) top is provided with described wire (9), described wire (9) top is provided with solder joint (10).
2. the high-power LED encapsulation structure of a kind of practicality according to claim 1, is characterized in that: described layers of copper (3) is connected with described solderable bottom (5), and described molybdenum layer (6) is clipped between upper and lower two described layers of copper (3).
3. the high-power LED encapsulation structure of a kind of practicality according to claim 1, is characterized in that: described pyroceram (2) is connected with described layers of copper (3), and described conductive substrate (7) is connected with described layers of copper (3).
4. the high-power LED encapsulation structure of a kind of practicality according to claim 1, is characterized in that: described wire (9) is connected with described pyroceram (2), and described low temperature glass pottery (1) is connected with described wire (9).
5. the high-power LED encapsulation structure of a kind of practicality according to claim 1, it is characterized in that: described insulating barrier (8) is connected with described conductive substrate (7), described wire (9) is connected with described insulating barrier (8), and described solder joint (10) is connected with described wire (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510498407.6A CN105047790B (en) | 2015-08-14 | 2015-08-14 | A kind of practical high-power LED encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510498407.6A CN105047790B (en) | 2015-08-14 | 2015-08-14 | A kind of practical high-power LED encapsulation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105047790A true CN105047790A (en) | 2015-11-11 |
| CN105047790B CN105047790B (en) | 2018-01-12 |
Family
ID=54454173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510498407.6A Active CN105047790B (en) | 2015-08-14 | 2015-08-14 | A kind of practical high-power LED encapsulation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105047790B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1111567A (en) * | 1993-12-28 | 1995-11-15 | 日本电解株式会社 | Copper clad laminate, multilayer printed circuit board and their processing method |
| US5998043A (en) * | 1996-02-05 | 1999-12-07 | Sumitomo Electric Industries, Ltd. | Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same |
| CN1707782A (en) * | 2004-06-10 | 2005-12-14 | 佶鸿电子股份有限公司 | Radiating substrate and producing method thereof |
| CN101418938A (en) * | 2007-10-23 | 2009-04-29 | 株式会社日立制作所 | Light source mould |
| CN102194968A (en) * | 2010-03-19 | 2011-09-21 | 佛山市奇明光电有限公司 | Light-emitting diode (LED) |
| CN202018960U (en) * | 2010-12-10 | 2011-10-26 | 奉化市匡磊半导体照明有限公司 | Luminous chip packaging structure of insulating bottom plate |
| CN102412361A (en) * | 2010-09-21 | 2012-04-11 | 佳胜科技股份有限公司 | Laminated heat dissipation substrate and electronic assembly structure using same |
-
2015
- 2015-08-14 CN CN201510498407.6A patent/CN105047790B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1111567A (en) * | 1993-12-28 | 1995-11-15 | 日本电解株式会社 | Copper clad laminate, multilayer printed circuit board and their processing method |
| US5998043A (en) * | 1996-02-05 | 1999-12-07 | Sumitomo Electric Industries, Ltd. | Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same |
| CN1707782A (en) * | 2004-06-10 | 2005-12-14 | 佶鸿电子股份有限公司 | Radiating substrate and producing method thereof |
| CN101418938A (en) * | 2007-10-23 | 2009-04-29 | 株式会社日立制作所 | Light source mould |
| CN102194968A (en) * | 2010-03-19 | 2011-09-21 | 佛山市奇明光电有限公司 | Light-emitting diode (LED) |
| CN102412361A (en) * | 2010-09-21 | 2012-04-11 | 佳胜科技股份有限公司 | Laminated heat dissipation substrate and electronic assembly structure using same |
| CN202018960U (en) * | 2010-12-10 | 2011-10-26 | 奉化市匡磊半导体照明有限公司 | Luminous chip packaging structure of insulating bottom plate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105047790B (en) | 2018-01-12 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Yonghui Inventor before: He Bei |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20171212 Address after: 241300 Anhui province Wuhu city Nanling County Economic Development Zone, Tianjing science and technology incubator 2018 room Applicant after: Nanling Wangke Intellectual Property Management Co.,Ltd. Address before: 241300 Anhui City, Wuhu province Nanling County town, Zhongshan District, building 3, unit 302, room 1 Applicant before: He Bei |
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| GR01 | Patent grant | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20180809 Address after: 529080 the 2 floor of 4 building, No. 33 Minghui Road, Jianghai District, Jiangmen, Guangdong (self compiled 03 rooms) Patentee after: JIANGMEN ZHONGLIANG OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 241300 room 2018, Tianjing science and technology incubator, Nanling County Economic Development Zone, Wuhu, Anhui Patentee before: Nanling Wangke Intellectual Property Management Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A Practical Packaging Structure of High Power LED Effective date of registration: 20221101 Granted publication date: 20180112 Pledgee: Jiangmen Rural Commercial Bank Co.,Ltd. Jianghai central sub branch Pledgor: JIANGMEN ZHONGLIANG OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2022980020328 |