CN219959039U - Device for improving heat dissipation of high-power LED chip based on COB packaging - Google Patents
Device for improving heat dissipation of high-power LED chip based on COB packaging Download PDFInfo
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- CN219959039U CN219959039U CN202321151879.0U CN202321151879U CN219959039U CN 219959039 U CN219959039 U CN 219959039U CN 202321151879 U CN202321151879 U CN 202321151879U CN 219959039 U CN219959039 U CN 219959039U
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- power led
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 239000010949 copper Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000004519 grease Substances 0.000 claims abstract description 8
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 8
- 239000007769 metal material Substances 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000005457 optimization Methods 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000011148 porous material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Abstract
The utility model provides a device for improving heat dissipation of a high-power LED chip based on COB packaging, which comprises: the high-power LED module is bound to the center of the surface of the substrate through die bonding glue and is electrically connected through gold wires, the heat radiating device is connected with the bottom of the substrate through a heat conduction silicone grease layer, the substrate comprises a copper layer arranged at the top end, an insulating layer arranged in the middle and a metal base material arranged at the bottom, a micropore array is arranged on the insulating layer, and metal materials are filled in the micropore array. Through the optimization of the micropores to the insulating layer, copper with high heat conductivity can be filled in the insulating layer by opening the micropores, so that the heat transfer speed can be locally increased, and the junction temperature of the high-power LED chip is reduced to a great extent.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a device for improving heat dissipation of a high-power LED chip based on COB packaging.
Background
In recent years, with the great progress of LED technology, LED light sources are developed towards high power, small package and high brightness, but because of the low LED electro-optical conversion efficiency, about 80% of input power is converted into heat energy, which is a great part of heat, and the rise of the part of heat can generate certain adverse effects on the luminous flux, the luminous wavelength and the service life of an LED assembly of the high power LED, so that the problem of improving the heat dissipation of an LED chip is primarily solved, and the existing SMD (Surface Mounted Devices) patch type package is adhered to a MCPCB (Metal Core PCB) metal-based printed board through soldering tin and heat conduction silicone grease, but because of the limited heat conduction property of the heat conduction silicone grease, the contact area is small, and the heat dissipation property is extremely limited. The COB (Chip On Board) package can directly package a plurality of LED chips on the metal-based printed board, and directly dissipate heat through the metal-based printed board, so that the cost can be reduced, and the heat dissipation performance can be enhanced. However, the metal-based printed board is composed of a metal substrate, a heat conducting insulating layer and a printing layer, the heat conductivity of the printing layer and the metal substrate is good, but the heat conductivity of the heat conducting insulating layer is poor, heat emitted by the LEDs is blocked at the heat conducting insulating layer, the heat cannot be well dissipated, and the metal-based printed board is more limited in high-power LED application.
Disclosure of Invention
In order to solve the technical problems in the prior art, an embodiment of the present utility model provides a device for improving heat dissipation of a high-power LED chip based on COB package, where the device includes: the high-power LED module is bound to the center of the surface of the substrate through die bonding glue and is electrically connected through gold wires, the heat radiating device is connected with the bottom of the substrate through a heat conduction silicone grease layer, the substrate comprises a copper layer arranged at the top end, an insulating layer arranged in the middle and a metal base material arranged at the bottom, a micropore array is arranged on the insulating layer, and metal materials are filled in the micropore array.
Optionally, the heat dissipating device comprises a heat sink and fins connected with the lower end of the heat sink.
Optionally, the radiator is a ceramic radiator, and the ceramic is made of aluminum oxide.
Optionally, the substrate is a silicon substrate.
Optionally, the insulating layer is made of silicon dioxide.
Optionally, the micropore array is an array formed by n×n micropores, where a center-most micropore in the micropore array is located at a center position of the insulating layer.
Optionally, the micropore radius is 50um, and the micropore spacing is 500um.
Optionally, the thickness of the insulating layer is 0.08mm, and the thickness of the copper layer is 0.04mm.
Optionally, the metal material filled in the micropores is copper material.
Optionally, the device is covered with an epoxy encapsulation layer that encapsulates the high power LED modules together.
The technical scheme provided by the embodiment of the utility model has the beneficial effects that: the utility model provides a device for improving heat dissipation of a high-power LED chip based on COB packaging, which comprises: the high-power LED module is bound to the center of the surface of the substrate through die bonding glue and is electrically connected through gold wires, the heat radiating device is connected with the bottom of the substrate through a heat conduction silicone grease layer, the substrate comprises a copper layer arranged at the top end, an insulating layer arranged in the middle and a metal base material arranged at the bottom, a micropore array is arranged on the insulating layer, and metal materials are filled in the micropore array. Through the optimization of the micropores to the insulating layer, copper with high heat conductivity can be filled in the insulating layer by opening the micropores, so that the heat transfer speed can be locally increased, and the junction temperature of the high-power LED chip is reduced to a great extent.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a device for improving heat dissipation of a COB package-based high-power LED chip according to the present utility model.
FIG. 2 is a schematic diagram of a microwell array according to one embodiment of the utility model.
FIG. 3 is a graph showing junction temperature versus thermal power before and after adding a microwell array according to one embodiment of the utility model.
Fig. 4 is a schematic diagram showing a COB LED junction temperature variation curve of an MCPCB substrate and a silicon substrate according to an embodiment of the present utility model.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, the embodiments of the present utility model will be described in further detail with reference to the accompanying drawings.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs; the terms used in the specification are used herein for the purpose of describing specific embodiments only and are not intended to limit the present utility model, for example, the terms "length", "width", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", "upper end", "lower end", "middle", etc. indicate orientations or positions based on the orientation or position shown in the drawings, are merely for convenience of description, and are not to be construed as limiting the present technical solution.
The terms "comprising" and "having" and any variations thereof in the description of the utility model and the claims and the description of the drawings above are intended to cover a non-exclusive inclusion; the terms first, second and the like in the description and in the claims or in the above-described figures, are used for distinguishing between different objects and not necessarily for describing a sequential or chronological order. The meaning of "a plurality of" is two or more, unless specifically defined otherwise.
Furthermore, references herein to "an embodiment" mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present utility model. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
For ease of subsequent understanding, terms that may appear in the following embodiments are explained here:
COB: the Chip-On-Board (COB) packaging technology is an LED packaging technology in which an LED Chip is directly bound On a Printed Circuit Board (PCB) or a metal-based printed circuit Board (MCPCB) by a COB die bonder, and the Chip and the PCB are electrically connected by wire bonding. It can package tens or hundreds of chips in a small area, and finally form the surface light source.
Metal-based printed circuit board: (Metal Core Printed Circuit Board) the MCPCB substrate is to adhere a Printed Circuit Board (PCB) to metal (such as aluminum and copper) with good heat transfer effect to strengthen heat dissipation effect, and the core of the MCPCB substrate is an insulating layer, which is used for electrical insulation to prevent short circuit between chips.
High-power LED: refers to LEDs rated at watt levels.
Junction temperature: (junction temperature) is the highest temperature of the actual semiconductor chip (wafer, die) in the electronic device. It is typically higher than the case temperature and the device surface temperature. Junction temperature can measure the time required for heat dissipation from the semiconductor wafer to the package housing as well as the thermal resistance.
Examples
Fig. 1 is a schematic diagram of a device for improving heat dissipation of a COB package-based high-power LED chip according to the present utility model.
For the convenience of subsequent understanding, the working principle of the utility model will be described: the heat generated by the high-power LED chip is transferred to the die bond adhesive, then is transferred to the metal substrate through the insulating layer with poor heat dissipation performance, the metal substrate can be transferred to the radiator through heat convection or through heat conduction silicone grease, and finally, the heat is transferred to the air through the radiator through heat convection.
As an example, the device includes a high-power LED module 1, a substrate 2, and a heat dissipating device 3, where the high-power LED module 1 is bound to the surface center of the substrate 2 by a die bond glue 4 and is electrically connected by a gold wire 5, the heat dissipating device 3 is connected to the bottom of the substrate 2 by a heat conductive silicone grease layer 6, the substrate 2 includes a copper layer 201 disposed at the top, an insulating layer 202 disposed in the middle, and a metal substrate 203 disposed at the bottom, the insulating layer 202 is provided with a micro-hole array 2021, and the micro-hole array is filled with a metal material.
Optionally, the heat dissipating device 3 includes a heat sink 301 and a fin 302 connected to a lower end of the heat sink. The heat sink 301 is a ceramic heat sink, and the ceramic material is aluminum oxide. The ceramic radiator is a good electric insulation radiator, has corrosion resistance and high temperature resistance, is particularly used for radiating corrosive fluid, and has long service life which is several times or tens times of that of a metal radiator under the same condition, so that the heat radiation performance can be further improved by using the ceramic radiator. Specifically, the material of the ceramics is Al 2 O 3 The thermal conductivity is28W/(mK) and the emissivity was 0.16.
Optionally, the micropore array is an array formed by n×n micropores, where a center-most micropore in the micropore array is located at a center position of the insulating layer. As shown in fig. 2, a schematic diagram of a micro-pore array of 3*3 with a micro-pore radius of 50um and a micro-pore spacing of 500um is shown. Because the heat conductivity of the insulating layer is very small, such as FR-4, and only 0.88W/(mK), the heat conductivity of the insulating layer is very poor, so that micropores are formed in the insulating layer and are filled with materials with high heat conductivity, the heat transfer speed can be locally increased, and the heat generated by the high-power LED chip can be transferred to the metal substrate as soon as possible.
Alternatively, as shown in fig. 3, a schematic diagram of a junction temperature change with thermal power before and after adding the micropore array is shown. When the thermal power is increased, the junction temperature of the high-power LED before and after optimization is increased, but the increase amplitude after optimization is smaller than that before optimization. Specifically, when the thermal power is 4W, the junction temperature of the high-power LED chip before optimization is 65.9 ℃, the junction temperature of the high-power LED chip after optimization is 53 ℃, and the junction temperature of the high-power LED chip after optimization is reduced by 12.9 ℃. When the thermal power is 8.8W, the junction temperature of the high-power LED chip before optimization is 121 ℃, the junction temperature of the high-power LED chip after optimization is 92.7 ℃, and the junction temperature of the high-power LED chip after optimization is reduced by 28.3 ℃. Therefore, with the increase of the thermal power, the junction temperature of the high-power LED structure of the COB package after optimization is reduced more greatly, namely the high-power LED structure of the COB package after optimization has better heat dissipation performance.
At present, only 20-30% of the LED is converted into light energy, and the other 70-80% of the LED is converted into heat energy, so that the LED packaging and heat dissipation device has great significance in LED packaging and heat dissipation research. The packaging aims to fully protect the chip and prevent the chip from being in long-term contact with air or from being damaged by pressure in the transportation and use processes; for the LED package, it is also required to have a low junction temperature and a good light extraction rate, these two factors are related to each other, and the low junction temperature can make the light extraction rate of the LED chip very high, so as to further improve the service life of the LED chip.
Optionally, copper material is added in the micropore array, so that the purpose of the process is to enable heat generated by the high-power LED chip to pass through a copper layer with high heat conductivity, and then the heat can be quickly transferred to a copper substrate through the micropores filled with copper, and the heat transfer speed is locally increased, so that the heat dissipation performance of the high-power LED is improved.
Optionally, the substrate is a silicon substrate, and the insulating layer is made of silicon dioxide. Specifically, the Si material size of the silicon substrate is 20mm by 1.5mm, the thermal conductivity of Si is 150W/(mK), the insulating layer SiO 2 The dimensions of (2) are 20mm by 0.08mm, siO 2 The thermal conductivity was 7.6W/(mK). Fig. 4 is a schematic diagram showing a COB LED junction temperature change curve of the MCPCB substrate and the silicon substrate. Wherein, as the thermal power becomes larger, the junction temperature of the high-power LED becomes larger. At a thermal power of 4W, the junction temperature of the COB LED of the silicon substrate is 49.5 ℃, however, the junction temperature of the COB LED of the MCPCB substrate is 65.9 ℃, and the difference DeltaT between the junction temperatures of the two chips is 1 =16.4 ℃. In particular, as the thermal power becomes larger, Δt becomes larger, and when the thermal power is 8.8W, the COB LED junction temperature of the silicon substrate becomes
COB LED junction temperature of MCPCB substrate is 121deg.C, and difference DeltaT between junction temperature of the COB LED and the MCPCB substrate is 85deg.C 2 The heat dissipation performance of COB LED structure based on silicon substrate was seen to be much better than COB LED structure based on MCPCB substrate analyzed previously. The main reason is that the MCPCB substrate mainly comprises a circuit layer (copper foil), a copper base material and an insulating layer, the thermal conductivity of copper is 385W/(mK), the thermal conductivity of silicon is 150W/(mK), and the two values are larger although the thermal conductivity is lower than that of copper, the two values have smaller influence on heat dissipation, however, the thermal conductivity of the insulating layer of the MCPCB substrate is lower than that of the insulating layer of the silicon substrate, the heat dissipation effect on the MCPCB substrate is greatly influenced, and the COB LED heat dissipation performance of the silicon substrate is better than that of the COB LED heat dissipation performance of the MCPCB substrate.
Optionally, the thickness of the insulating layer is 0.08mm, and the thickness of the copper layer is 0.04mm.
Optionally, as shown in fig. 1, the device is covered with an epoxy encapsulation layer 7 that encapsulates the high power LED modules together.
The utility model is based on the optimization of the micro-pores to the insulating layer. Copper with high heat conductivity can be filled by forming micropores in the insulating layer, so that the heat transfer speed can be locally increased, and the junction temperature of the high-power LED chip is reduced to a great extent. And further effectively prolonging the service life of the LED chip.
The foregoing is merely an embodiment of the present utility model, and a specific structure and characteristics of common knowledge in the art, which are well known in the scheme, are not described herein, so that a person of ordinary skill in the art knows all the prior art in the application date or before the priority date, can know all the prior art in the field, and has the capability of applying the conventional experimental means before the date, and a person of ordinary skill in the art can complete and implement the present embodiment in combination with his own capability in the light of the present utility model, and some typical known structures or known methods should not be an obstacle for a person of ordinary skill in the art to implement the present utility model. It should be noted that modifications and improvements can be made by those skilled in the art without departing from the structure of the present utility model, and these should also be considered as the scope of the present utility model, which does not affect the effect of the implementation of the present utility model and the utility of the patent. The protection scope of the present utility model is subject to the content of the claims, and the description of the specific embodiments and the like in the specification can be used for explaining the content of the claims.
Claims (10)
1. A device for improving heat dissipation of a COB (chip on board) package-based high-power LED chip, the device comprising: the high-power LED module is bound to the center of the surface of the substrate through die bonding glue and is electrically connected through gold wires, the heat radiating device is connected with the bottom of the substrate through a heat conduction silicone grease layer, the substrate comprises a copper layer arranged at the top end, an insulating layer arranged in the middle and a metal base material arranged at the bottom, a micropore array is arranged on the insulating layer, and metal materials are filled in the micropore array.
2. The device for improving heat dissipation of a COB-packaged high-power LED chip of claim 1, wherein said heat dissipation device comprises a heat sink and fins connected to the lower end of the heat sink.
3. The device for improving heat dissipation of a COB-packaged high-power LED die of claim 2 wherein said heat sink is a ceramic heat sink and said ceramic material is aluminum oxide.
4. The device for improving heat dissipation of COB-packaged high-power LED chips of claim 1, wherein said substrate is a silicon substrate.
5. The device for improving heat dissipation of COB-packaged high-power LED chips of claim 1, wherein said insulating layer is silicon dioxide.
6. The device for improving heat dissipation of a COB-packaged high-power LED die of claim 1 wherein said array of micro-holes is an array of N x N micro-holes, wherein the center-most micro-hole of said array of micro-holes is located at the center of said insulating layer.
7. The device for improving heat dissipation of COB-packaged high-power LED chips of claim 6, wherein said microwell radius is 50um and microwell pitch is 500um.
8. The device for improving heat dissipation of COB-packaged high-power LED chips of claim 1, wherein said insulating layer has a thickness of 0.08mm and copper layer has a thickness of 0.04mm.
9. The device for improving heat dissipation of a COB-packaged high-power LED chip of claim 1, wherein said metal filled in said micro-holes is copper.
10. The COB package-based high-power LED chip heat dissipation device of claim 1, wherein said device is covered with an epoxy encapsulation layer that encapsulates said high-power LED modules together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321151879.0U CN219959039U (en) | 2023-05-12 | 2023-05-12 | Device for improving heat dissipation of high-power LED chip based on COB packaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321151879.0U CN219959039U (en) | 2023-05-12 | 2023-05-12 | Device for improving heat dissipation of high-power LED chip based on COB packaging |
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| Publication Number | Publication Date |
|---|---|
| CN219959039U true CN219959039U (en) | 2023-11-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321151879.0U Active CN219959039U (en) | 2023-05-12 | 2023-05-12 | Device for improving heat dissipation of high-power LED chip based on COB packaging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219959039U (en) |
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2023
- 2023-05-12 CN CN202321151879.0U patent/CN219959039U/en active Active
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