CN105045010A - 一种阵列基板和显示装置 - Google Patents

一种阵列基板和显示装置 Download PDF

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CN105045010A
CN105045010A CN201510527004.XA CN201510527004A CN105045010A CN 105045010 A CN105045010 A CN 105045010A CN 201510527004 A CN201510527004 A CN 201510527004A CN 105045010 A CN105045010 A CN 105045010A
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明星
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Wuhan China Star Optoelectronics Technology Co Ltd
TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
Wuhan China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Abstract

本发明公开了一种阵列基板和显示装置，属于显示技术领域，以解决残留在沟槽里的透明导电材料会引起显示不良的技术问题。该阵列基板包括数据线和位于数据线上方的平坦层，在阵列基板的非显示区域，平坦层形成有配合封框胶的沟槽，沟槽内形成有覆盖数据线的色阻层，色阻层的表面低于平坦层的表面。本发明可用于液晶电视、液晶显示器、手机、平板电脑等显示装置。

Description

一种阵列基板和显示装置
技术领域
本发明涉及显示技术领域，具体地说，涉及一种阵列基板和显示装置。
背景技术
随着移动终端在生活中的应用越来越广泛，用户对移动终端的显示效果的要求越来越高。为了满足用户对移动终端的显示要求，移动终端显示屏正向着更高画质、更高解析度、更轻薄和更低功耗等方向发展。随着解析度的提高，移动终端显示屏的开口率会减小。为了保证移动终端的显示亮度，移动终端需求的背光亮度就越来越高。在目前的移动终端中，背光源的亮度已经超越电视等较大的显示装置。背光源的高亮度提高了移动终端的功耗，同时缩短了移动终端的待机时长，给用户带来较多的不便。
为了在保证移动终端显示屏的亮度同时不提升背光亮度的功耗，需要提高移动终端显示屏的透过率。现在常规的做法是采用平坦层来减少像素电极、公共电极与数据线或扫描线间的电容。一般平坦层的厚度为1.5μm以上，平坦层的设置有利于提高显示屏的开口率。同时为了满足显示屏窄边框的需求，通常的做法是压缩封框胶宽度。封框胶宽度的降低，有可能会降低封框胶对阵列基板及其对盒基板的粘附强度，给显示屏带来隐患。
为了保障封框胶对阵列基板及其对盒基板的粘附强度，如图1和2所示，通常会在阵列基板周边的平坦层1形成配合封框胶的沟槽。这样可保证封框胶与阵列基板的接触面积，进而保证封框胶的粘附程度。但是，平坦层的沟槽深度较大且会暴露部分数据线3，同时沟槽边缘的坡度一般大于50度。这导致在后续形成公共电极和像素电极时，沟槽里面会残留有大量的透明导电材料2。残留的透明导电材料2很可能会引起数据线3间的短路，引起显示不良。
发明内容
本发明的目的在于提供一种阵列基板和显示装置，以解决残留在沟槽里的透明导电材料会引起数据线间短路的技术问题。
本发明第一方面提供了一种阵列基板，该阵列基板包括数据线和位于数据线上方的平坦层，在阵列基板的非显示区域，平坦层形成有配合封框胶的沟槽，沟槽内形成有覆盖数据线的色阻层，色阻层的表面低于平坦层的表面。
其中，色阻层位于平坦层和数据线之间。
其中，色阻层与平坦层同层设置于数据线之上。
其中，对应所述平坦层的沟槽，所述数据线和衬底基板之间由下至上依次还包括：
缓冲层、栅极绝缘层和层间绝缘层。
其中，所述色阻层包括红色、绿色、蓝色和无色四种中的至少一种。
其中，色阻层的表面低于平坦层的表面至少0.5μm。
其中，色阻层的厚度为1至5μm。
其中，平坦层的厚度为1至6μm。
本发明带来了以下有益效果：在本发明实施例中，沟槽区域的数据线上方设置有绝缘的色阻层。色阻层覆盖了沟槽区域的数据线，可完全将沟槽内残留的透明导电材料和数据线隔绝开，防止在形成公共电极和像素电极之后，沟槽内残留的透明导电材料引起数据线的短路，保证了显示装置的显示效果。
本发明第二方面提供了一种显示装置，包括上述的阵列基板，还包括与所述阵列基板对盒设置的彩色滤光基板。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是现有技术中的阵列基板的结构示意图；
图2是图1的A-A截面示意图；
图3是本发明实施例中的阵列基板的结构示意图；
图4是图3的B-B截面示意图一；
图5是图3的B-B截面示意图二。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
本发明实施例提供了一种阵列基板，如图3、4和5所示，该阵列基板包括数据线3和位于数据线3上方的平坦层1。其中，在阵列基板的非显示区域，平坦层1形成有配合封框胶的沟槽，沟槽内形成有覆盖数据线3的色阻层8，色阻层8的表面低于平坦层1的表面。
在本发明实施例中，沟槽区域的数据线3上方设置有绝缘的色阻层8。色阻层8覆盖了沟槽区域的数据线3，可完全将沟槽内残留的透明导电材料2和数据线3隔绝开，防止在形成公共电极和像素电极之后，沟槽内残留的透明导电材料2引起数据线3的短路，保证了显示装置的显示效果。
具体的，以设置有低温多晶硅(LowTemperaturePoly-silicon，简称LTPS)薄膜晶体管(ThinFilmTransistor，简称TFT)的阵列基板为例：在衬底基板7上，首先制备遮光层，在遮光层之上形成缓冲层6和非晶硅；之后通过准分子激光退火工艺使非晶硅转化为低温多晶硅，以形成有源层；然后依次形成栅极绝缘层5、栅极、层间绝缘层4和数据线3，如图4或图5所示，其中留在平坦层1的沟槽区域的结构包括缓冲层6(Buffer)、栅极绝缘层5(GateInsulator，简称GI)、层间绝缘层4(InterLevelDielectric，简称ILD)；接下来，对于设置有红色(R)、蓝色(B)和绿色(G)三种颜色像素的显示装置而言，可经过红色彩膜、绿色彩膜和蓝色彩膜三道制程，在该显示装置的阵列基板上形成RGB三种颜色的像素，并在沟槽的对应区域至少保留红色色阻、蓝色色阻、绿色色阻三者之一，色阻层8覆盖暴露在外的数据线3；最后形成平坦层1以及沟槽、公共电极、钝化层和像素电极等结构。
将包括红、绿和蓝三色的彩色滤光层(ColorFilter，简称CF)挪到阵列基板上，黑矩阵保留在阵列基板的对盒基板上，这种技术叫做COA(ColorFilteronArray)。本发明实施例中，色阻层8覆盖在沟槽区域的数据线3上面，防止制作公共电极和像素电极时残留的透明导电材料2将数据线3短路。
对应的，阵列基板的对盒基板上依次形成黑矩阵(BlackMatrix，简称BM)和隔垫物(PostSpacer，简称PS)，无需设置平坦化层(OverCoat，简称OC)，这样可以减少因为OC层的吸收造成的光的损耗，有利于提高显示装置对光的使用率。
进一步的，可将原本设置于彩色滤光基板上的CF和BM一同放置在阵列基板上。这样有利于提高CF和BM的对位精度，有利于更好地减小阵列基板上的像素单元的尺寸、减小BM的宽度，提高显示装置的透过率、解析度，还可改善显示装置的大视角漏光现象。
对于BM也移至阵列基板的情况，由于BM也为绝缘材质制成，因此在本发明实施例中，也可将BM作为覆盖暴露在外的数据线的色阻层8。
需要说明的是，虽然本发明实施例中首先形成色阻层8，之后再形成平坦层1。但是由于色阻层8的主要成分与平坦层1的主要成分不相同，因此对平坦层1进行构图工艺和对色阻层8进行构图工艺时所采用的刻蚀气体不相同。在平坦层1上形成沟槽时，刻蚀气体即使接触到色阻层8，也不会对色阻层8造成任何影响。因此，在数据线3上覆盖色阻层8，可有效地保障形成平坦层1及沟槽之后，数据线3不会被沟槽暴露在外，能够得到有效的保护。
为了更好地提高显示装置的光的透过率、改善大视角漏光现象，CF还可包括无色的色阻层8，与红色、蓝色、绿色的色阻层8一起阵列排布在彩色滤光基板或者阵列基板上。无色的色阻层8也可以保留在沟槽区域，覆盖沟槽区域的数据线3。
因此，在本发明实施例中，沟槽区域保留的色阻层8可根据阵列基板的实际结构，包括黑色、红色、绿色、蓝色和无色五种中的至少一种。
在本发明实施例一个具体实施场景中，如图4所示，色阻层8可以设置在平坦层1和数据线3之间，平坦层1直接在色阻层8上形成。这种情况下，沟槽的深度主要由平坦层1的厚度来决定。为了保证色阻层8对数据线3的绝缘效果，色阻层8的厚度可以尽量增大，例如在沟槽区域形成红色、绿色和蓝色三层色阻层8。
一般的，色阻层8的厚度为1至5μm，平坦层1的厚度为1至6μm。例如，假设红色、绿色和蓝色色阻层8的厚度均为2μm，平坦层1的厚度为3μm。由于平坦层1的刻蚀气体与色阻层8的刻蚀气体不相同，因此形成沟槽时所使用的刻蚀气体无法刻蚀色阻层8，沟槽的深度至多为3μm。
本发明实施例的另一具体实施场景中，如图5所示，可在色阻层8形成后，将沟槽区域外沿的色阻层8去除，之后形成的平坦层1直接设置在数据线3之上，即平坦层1与色阻层8同层设置于数据线3之上。这种情况下，沟槽的深度取决于平坦层1与色阻层8的厚度之差。为了保证在对盒时，沟槽的深度结合封框胶的粘性，能满足阵列基板及与其对盒的彩色滤光基板的封装要求，色阻层8的表面应低于平坦层1的表面至少0.5μm。
显然，沟槽区域能设置多少层色阻层8主要取决于各层色阻层8和平坦层1的厚度。例如，平坦层1的厚度为5μm，各层色阻层8(包括红色、绿色、蓝色、黑色和无色)的厚度为2μm。此时至多可以设置两层色阻层8，即色阻层8的厚度为4μm，低于平坦层1的表面1μm。
进一步的，本发明实施例还提供了一种显示装置，该显示装置上述任意一种阵列基板，还包括与该阵列基板的对盒设置的的彩色滤光基板。具体的，该显示装置可以为：液晶面板、液晶电视、液晶显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (9)

1.一种阵列基板，其特征在于，包括数据线和位于数据线上方的平坦层，在阵列基板的非显示区域，平坦层形成有配合封框胶的沟槽，沟槽内形成有覆盖数据线的色阻层，色阻层的表面低于平坦层的表面。
2.根据权利要求1所述的阵列基板，其特征在于，色阻层位于平坦层和数据线之间。
3.根据权利要求1所述的阵列基板，其特征在于，色阻层与平坦层同层设置于数据线之上。
4.根据权利要求1至3任一项所述的阵列基板，其特征在于，对应所述平坦层的沟槽，所述数据线和衬底基板之间由下至上依次还包括：
缓冲层、栅极绝缘层和层间绝缘层。
5.根据权利要求4所述的阵列基板，其特征在于，所述色阻层包括红色、绿色、蓝色和无色四种中的至少一种。
6.根据权利要求5所述的阵列基板，其特征在于，
色阻层的表面低于平坦层的表面至少0.5μm。
7.根据权利要求6所述的阵列基板，其特征在于，
色阻层的厚度为1至5μm。
8.根据权利要求7所述的阵列基板，其特征在于，
平坦层的厚度为1至6μm。
9.一种显示装置，其特征在于，包括如权利要求1至8任一项所述的阵列基板，还包括与所述阵列基板对盒设置的彩色滤光基板。
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