CN105027267A - 研磨用组合物 - Google Patents

研磨用组合物 Download PDF

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Publication number
CN105027267A
CN105027267A CN201480009493.3A CN201480009493A CN105027267A CN 105027267 A CN105027267 A CN 105027267A CN 201480009493 A CN201480009493 A CN 201480009493A CN 105027267 A CN105027267 A CN 105027267A
Authority
CN
China
Prior art keywords
polishing
colloidal silica
silica particles
composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480009493.3A
Other languages
English (en)
Chinese (zh)
Inventor
伊藤润
堀田和利
杉山博保
森永均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of CN105027267A publication Critical patent/CN105027267A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201480009493.3A 2013-02-20 2014-02-07 研磨用组合物 Pending CN105027267A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013-031228 2013-02-20
JP2013031228 2013-02-20
JP2013177027A JP6436517B2 (ja) 2013-02-20 2013-08-28 研磨用組成物
JP2013-177027 2013-08-28
PCT/JP2014/052956 WO2014129328A1 (ja) 2013-02-20 2014-02-07 研磨用組成物

Publications (1)

Publication Number Publication Date
CN105027267A true CN105027267A (zh) 2015-11-04

Family

ID=51391124

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480009493.3A Pending CN105027267A (zh) 2013-02-20 2014-02-07 研磨用组合物

Country Status (7)

Country Link
US (1) US9879156B2 (enExample)
JP (1) JP6436517B2 (enExample)
KR (1) KR102176147B1 (enExample)
CN (1) CN105027267A (enExample)
RU (1) RU2646938C2 (enExample)
TW (1) TWI576420B (enExample)
WO (1) WO2014129328A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107011804A (zh) * 2016-01-28 2017-08-04 浙江晶圣美纳米科技有限公司 一种蓝宝石化学机械抛光液
CN110072966A (zh) * 2016-12-22 2019-07-30 霓达哈斯股份有限公司 研磨用组合物
CN112480824A (zh) * 2019-09-11 2021-03-12 福吉米株式会社 研磨用组合物、研磨方法及半导体基板的制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6506913B2 (ja) * 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
KR20170047307A (ko) * 2014-08-29 2017-05-04 캐보트 마이크로일렉트로닉스 코포레이션 사파이어 표면을 연마하기 위한 방법 및 조성물
JP5940754B1 (ja) * 2014-10-14 2016-06-29 花王株式会社 サファイア板用研磨液組成物
JP6570382B2 (ja) * 2015-09-09 2019-09-04 デンカ株式会社 研磨用シリカ添加剤及びそれを用いた方法
US9916985B2 (en) * 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
RU2635132C1 (ru) * 2017-02-20 2017-11-09 Общество с ограниченной ответственностью "Научно-технический центр "Компас" (ООО "НТЦ "Компас") Полировальная суспензия для сапфировых подложек
JP6864519B2 (ja) * 2017-03-31 2021-04-28 株式会社フジミインコーポレーテッド 研磨用組成物、磁気ディスク基板の製造方法および磁気ディスクの研磨方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6398827B1 (en) * 1999-07-02 2002-06-04 Nissan Chemical Industries, Ltd. Polishing composition
US20120094491A1 (en) * 2009-08-19 2012-04-19 Hitachi Chemical Company, Ltd. Cmp polishing liquid and polishing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053456A2 (en) * 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
US20060196849A1 (en) 2005-03-04 2006-09-07 Kevin Moeggenborg Composition and method for polishing a sapphire surface
JP2008044078A (ja) 2006-08-18 2008-02-28 Sumitomo Metal Mining Co Ltd サファイア基板の研磨方法
KR101715024B1 (ko) * 2006-12-28 2017-03-10 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 사파이어 기판
KR101170030B1 (ko) * 2007-10-05 2012-08-01 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 복합 슬러리를 이용한 사파이어 연마공정

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6398827B1 (en) * 1999-07-02 2002-06-04 Nissan Chemical Industries, Ltd. Polishing composition
US20120094491A1 (en) * 2009-08-19 2012-04-19 Hitachi Chemical Company, Ltd. Cmp polishing liquid and polishing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107011804A (zh) * 2016-01-28 2017-08-04 浙江晶圣美纳米科技有限公司 一种蓝宝石化学机械抛光液
CN110072966A (zh) * 2016-12-22 2019-07-30 霓达哈斯股份有限公司 研磨用组合物
CN110072966B (zh) * 2016-12-22 2021-06-15 霓达杜邦股份有限公司 研磨用组合物
CN112480824A (zh) * 2019-09-11 2021-03-12 福吉米株式会社 研磨用组合物、研磨方法及半导体基板的制造方法
CN112480824B (zh) * 2019-09-11 2023-10-24 福吉米株式会社 研磨用组合物、研磨方法及半导体基板的制造方法

Also Published As

Publication number Publication date
WO2014129328A1 (ja) 2014-08-28
US20160002500A1 (en) 2016-01-07
RU2646938C2 (ru) 2018-03-12
TW201446952A (zh) 2014-12-16
KR20150120980A (ko) 2015-10-28
JP2014187348A (ja) 2014-10-02
KR102176147B1 (ko) 2020-11-10
US9879156B2 (en) 2018-01-30
JP6436517B2 (ja) 2018-12-12
TWI576420B (zh) 2017-04-01
RU2015139807A (ru) 2017-03-27

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Application publication date: 20151104