CN105023999B - 光电子半导体构件 - Google Patents
光电子半导体构件 Download PDFInfo
- Publication number
- CN105023999B CN105023999B CN201510315781.8A CN201510315781A CN105023999B CN 105023999 B CN105023999 B CN 105023999B CN 201510315781 A CN201510315781 A CN 201510315781A CN 105023999 B CN105023999 B CN 105023999B
- Authority
- CN
- China
- Prior art keywords
- radiation
- conversion element
- semiconductor chip
- reflective
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 192
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 137
- 238000005538 encapsulation Methods 0.000 claims abstract description 103
- 230000005855 radiation Effects 0.000 claims abstract description 76
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 45
- 239000012790 adhesive layer Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 22
- 229920001296 polysiloxane Polymers 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 8
- 150000002118 epoxides Chemical class 0.000 claims description 7
- 238000001228 spectrum Methods 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- -1 BaSO 4 Inorganic materials 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 229910016909 AlxOy Inorganic materials 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims 2
- 238000004382 potting Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 10
- 229920002050 silicone resin Polymers 0.000 description 8
- 238000005507 spraying Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000446313 Lamella Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
Landscapes
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009058006.9A DE102009058006B4 (de) | 2009-12-11 | 2009-12-11 | Optoelektronisches Halbleiterbauteil |
| DE102009058006.9 | 2009-12-11 | ||
| CN201080056260.0A CN102652369B (zh) | 2009-12-11 | 2010-11-17 | 光电子半导体构件 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080056260.0A Division CN102652369B (zh) | 2009-12-11 | 2010-11-17 | 光电子半导体构件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105023999A CN105023999A (zh) | 2015-11-04 |
| CN105023999B true CN105023999B (zh) | 2018-07-17 |
Family
ID=43536571
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510315781.8A Active CN105023999B (zh) | 2009-12-11 | 2010-11-17 | 光电子半导体构件 |
| CN201080056260.0A Active CN102652369B (zh) | 2009-12-11 | 2010-11-17 | 光电子半导体构件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080056260.0A Active CN102652369B (zh) | 2009-12-11 | 2010-11-17 | 光电子半导体构件 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9029907B2 (https=) |
| EP (1) | EP2510558B1 (https=) |
| JP (1) | JP5863665B2 (https=) |
| KR (1) | KR20120117817A (https=) |
| CN (2) | CN105023999B (https=) |
| DE (1) | DE102009058006B4 (https=) |
| TW (1) | TWI419377B (https=) |
| WO (1) | WO2011069791A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010048162A1 (de) | 2010-10-11 | 2012-04-12 | Osram Opto Semiconductors Gmbh | Konversionsbauteil |
| DE102012101102A1 (de) | 2012-02-10 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Anordnung mit einer Mehrzahl von derartigen Bauelementen |
| DE102012113003A1 (de) | 2012-12-21 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| DE202013101400U1 (de) * | 2013-04-02 | 2014-07-03 | Zumtobel Lighting Gmbh | Anordnung zum Konvertieren des von einer LED-Lichtquelle emittierten Lichts |
| DE102013220790A1 (de) * | 2013-10-15 | 2015-04-16 | Osram Opto Semiconductors Gmbh | Herstellung eines optoelektronischen Bauelements |
| JP2015109337A (ja) * | 2013-12-04 | 2015-06-11 | 日東電工株式会社 | 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置 |
| US10211374B2 (en) * | 2014-01-09 | 2019-02-19 | Lumileds Llc | Light emitting device with reflective sidewall |
| DE102014114914A1 (de) * | 2014-10-14 | 2016-04-14 | Osram Opto Semiconductors Gmbh | Herstellung eines optoelektronischen Bauelements |
| DE102016105988A1 (de) * | 2016-04-01 | 2017-10-05 | Osram Opto Semiconductors Gmbh | Konverter zur teilweisen Konversion einer Primärstrahlung und lichtemittierendes Bauelement |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3789747B2 (ja) * | 2000-11-15 | 2006-06-28 | 三洋電機株式会社 | 発光装置の製造方法 |
| JP2006173271A (ja) * | 2004-12-14 | 2006-06-29 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明装置、携帯通信機器、及びカメラ |
| US7341878B2 (en) | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
| JP2006294925A (ja) | 2005-04-12 | 2006-10-26 | Seiko Epson Corp | 発光素子、発光素子の製造方法および発光装置 |
| JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
| EP2206164A2 (en) * | 2007-10-08 | 2010-07-14 | 3M Innovative Properties Company | Light emitting diode with bonded semiconductor wavelength converter |
| US9024340B2 (en) | 2007-11-29 | 2015-05-05 | Nichia Corporation | Light emitting apparatus and method for producing the same |
| US8049237B2 (en) * | 2007-12-28 | 2011-11-01 | Nichia Corporation | Light emitting device |
| JP5224173B2 (ja) * | 2008-03-07 | 2013-07-03 | スタンレー電気株式会社 | 半導体発光装置 |
| RU2010143026A (ru) * | 2008-03-21 | 2012-04-27 | Конинклейке Филипс Элкектроникс Н.В. (Nl) | Светящееся устройство |
| DE102008025159A1 (de) * | 2008-05-26 | 2009-12-10 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses |
| DE102008025923B4 (de) * | 2008-05-30 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
| DE102008050538B4 (de) | 2008-06-06 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
| KR101639793B1 (ko) * | 2008-09-25 | 2016-07-15 | 코닌클리케 필립스 엔.브이. | 코팅된 발광 장치 및 그 코팅 방법 |
| TWM357028U (en) | 2009-01-08 | 2009-05-11 | Jmk Optoelectronic Co Ltd | Packaging structure for light emitting diode |
-
2009
- 2009-12-11 DE DE102009058006.9A patent/DE102009058006B4/de active Active
-
2010
- 2010-11-17 CN CN201510315781.8A patent/CN105023999B/zh active Active
- 2010-11-17 WO PCT/EP2010/067707 patent/WO2011069791A1/de not_active Ceased
- 2010-11-17 CN CN201080056260.0A patent/CN102652369B/zh active Active
- 2010-11-17 EP EP10788035.3A patent/EP2510558B1/de active Active
- 2010-11-17 US US13/515,256 patent/US9029907B2/en active Active
- 2010-11-17 KR KR1020127018022A patent/KR20120117817A/ko not_active Ceased
- 2010-11-17 JP JP2012542430A patent/JP5863665B2/ja active Active
- 2010-12-08 TW TW099142775A patent/TWI419377B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013513934A (ja) | 2013-04-22 |
| TW201131822A (en) | 2011-09-16 |
| WO2011069791A1 (de) | 2011-06-16 |
| EP2510558A1 (de) | 2012-10-17 |
| US20120299041A1 (en) | 2012-11-29 |
| CN102652369B (zh) | 2015-07-01 |
| KR20120117817A (ko) | 2012-10-24 |
| CN105023999A (zh) | 2015-11-04 |
| CN102652369A (zh) | 2012-08-29 |
| EP2510558B1 (de) | 2019-06-26 |
| DE102009058006B4 (de) | 2022-03-31 |
| US9029907B2 (en) | 2015-05-12 |
| JP5863665B2 (ja) | 2016-02-16 |
| DE102009058006A1 (de) | 2011-06-16 |
| TWI419377B (zh) | 2013-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |