CN105022859A - Quantitative analysis method for heavy-ion single-particle multi-bit upset effect of device - Google Patents

Abstract

The invention discloses a quantitative analysis method for the heavy ion single particle multi-position flipping effect of a device. The method includes: selecting the type of heavy ion, setting a suitable fluence rate according to the corresponding principle to irradiate the device with the cover opened, and testing the system Record the logic address and data of the storage unit where the single event flip occurs in the device, and stop the irradiation when the expected number of single event flips or the maximum ion fluence is reached. Establish the mapping relationship from the logical address of the device to the physical address, and count the number of single-event flips, single-event unit flips, and multi-bit flip events based on the physical bitmap. Combined with the ion fluence, calculate the event probability of single event unit flipping and multibit flipping, the average value of multibit flipping, the cross section of multibit flipping and other parameters. The invention can provide technical support and information for the anti-single event flipping reinforcement design of the device, and verify and evaluate the effectiveness of the reinforcement technology.

Description

A Quantitative Analysis Method for the Heavy Ion Single Event Multi-Position Flip Effect of Devices

technical field

The invention relates to a quantitative analysis method for the heavy ion single particle multi-position flip effect of a device, and belongs to the research field of space single particle effect ground simulation test technology and reinforcement technology.

Background technique

With the continuous improvement of the performance requirements of large-scale integrated circuits in satellite electronic systems, the use of ultra-deep submicron and nanoscale integrated circuits has become an inevitable development trend. The primary problem brought about by the reduction of the device feature process size is the reduction of the critical charge. The critical charge is the minimum charge required for the device to undergo a single-event flip. It is inversely proportional to the square of the process size. In this case, the critical charge of the device is already less than 2fC. This means that after high-energy particles enter the device, the ionization energy deposition required to trigger the device state reversal is reduced, that is, the sensitivity of single event reversal is increased. In addition, the reduction of feature size also has a profound impact on the charge collection process, the charge sharing between multiple single-event turnover-sensitive junctions caused by single heavy ion incidence and the collapse of the well potential cause the parasitic double stage of adjacent memory cells. The double-stage amplification effect caused by the conduction of the transistor makes the problem of single event multiple bit flipping more and more serious. The ITRS international semiconductor technology development blueprint predicts that by 2016, the single event soft error rate of integrated circuits under the 25nm process will all come from multi-bit flips. The multi-bit flipping caused by the flipping of physically adjacent memory cells will cause some classic layout reinforcement methods such as DICE double-interlocked memory cells to lose their application in the face of multi-node charge collection mechanisms due to the sharp increase in device single-event soft errors. Some reinforcement effects, and make the traditional single-event effect simulation test methods, theoretical models challenged under the nanotechnology.

Single Event Multiple Bit Upset (MCU) refers to a topological error in which a single particle incident causes single event upover in multiple adjacent storage units physically. In-depth research on single event multiple bit flipping of devices requires accurate acquisition of the diversity and topology of single event multiple bit flipping of devices, counting the number of single event multiple bit flipping events of different sizes and performing quantitative characterization, which is very important for measuring single event multiple bit flipping of devices It is of great significance to guide the device anti-single event hardening design and verify the effectiveness of the hardening design. At present, there are many problems in the research of multi-bit inversion of single particle that it is difficult to distinguish and count multi-bit inversion, it is difficult to obtain topological graphs, and it is difficult to quantify the degree of influence. The domestic research on single-event multi-position flipping of devices is still in its infancy, and the research work on the single-particle multi-position flipping test method has not been carried out in depth. The patent application number 201010624396.9 is named as an experimental method for pulsed laser single-event flipping cross-section, which gives A method for obtaining single-particle flip cross-sections by using pulsed lasers. Application No. 200710177960.5 is a patent titled a method for obtaining the relationship between single-particle phenomenon cross-sections and heavy ion linear energy transfer. A method for obtaining single-particle flip cross-sections, blocking cross-sections, The method for the relationship between the cross-section and burn-out cross-section and the LET value of heavy ions, neither of the two patents involves the description of the acquisition and processing method of single-particle multi-position flip test data. Most of the research work on single-event multi-position inversion reported internationally focuses on the analysis and discussion of test results, and rarely involves the description of single-event multi-position inversion test methods. Usually, when carrying out the device single event effect test, the test system measures and obtains the single event flip test data based on the logical address, so it cannot objectively reflect whether the memory cells where the single event flip occurs are physically adjacent and whether they can be judged as real Single Event Multiple Bit Flip. On the other hand, even if the physical bitmap of the device is obtained, and the mapping from the logical address to the physical address of the single event flip is established, the selection of the ion fluence rate is not controlled in the effect test, and the conventional single event effect test method is selected. Any fluence rate within the fluence rate range of 10 ² -10 ⁵ /cm ² .s is easy to introduce "false" multi-bit flips caused by different particles incident at adjacent physical positions, resulting in single-particle multi-bit flip statistics The error is too large. At the same time, there is a lack of clear understanding of the characterization of single-event multi-bit flipping, resulting in the definition and calculation of multi-bit flipping not being able to accurately and effectively reflect the sensitivity of devices to single-event multi-bit flipping. Therefore, establishing a complete single-event multi-bit flip test data acquisition and processing method has become a key issue that needs to be solved urgently to carry out device single-event flip simulation test technology research, evaluate device anti-single event flipping ability, and improve device anti-single event flipping performance.

Contents of the invention

The purpose of the present invention is to provide a quantitative analysis method for the single-event multi-position flip test effect on the tested device under ground laboratory conditions, so as to make the research work of the ground single-event effect multi-position flip more convenient and practical in the future.

The present invention is achieved through the following technical solutions:

A quantitative analysis method for the heavy ion single event multi-position flipping effect of a device, which is special in that it includes the following steps:

1] Data acquisition

1.1] Beam parameter setting

Select the type of heavy ions, and select the appropriate fluence rate for irradiation according to the LET value of the heavy ions;

1.2] Test

Record the logical address and data of the storage unit where the single event flip occurs in the device, and stop the irradiation when the expected number of single event flips or the maximum ion fluence are reached;

2] Data processing

2.1] Establish a mapping relationship from device logical address to physical address to form a physical bitmap;

2.2] According to the physical bitmap, count the number of single-event flips and single-event events in each readback cycle and all readback cycles. The number of single-event events includes the number of single-bit flip events and the number of multi-bit flip events. The multi-bit flip topological graph corresponding to the bit flip event;

2.3] Based on the data statistical information in step 2.2], combined with the heavy ion fluence, characterize the single event multi-position flip, and realize the quantitative analysis of the single-event multi-position flip effect of the device.

If necessary, between step 1.2] and step 2.1] also include:

1.3] Adjust the incident angle of heavy ions, device filling patterns or operating voltage before performing 1.2] test

A step of.

If necessary, between step 1.3] and step 2.1] also include:

1.4] Select a new type of heavy ion, change the heavy ion LET value, select the appropriate fluence rate according to the heavy ion LET value for irradiation, and then proceed to 1.2] test steps.

If necessary, between step 1.4] and step 2.1] also include:

1.5] After adjusting the incident angle of heavy ions, device filling pattern or operating voltage, proceed to the steps of 1.2] test.

In step 1.1] when setting the beam current parameters, for devices sensitive to single event effects, the ion fluence rate should be as low as possible during irradiation, so that the “pseudo” MCU (two or more ions incident on adjacent positions caused by MCU) is controlled to a very low probability of occurrence. However, if the fluence rate is too low, the accumulation of single particle turnover number will be too slow, the irradiation time will be too long, the accelerator beam current will be unstable, and the error of fluence statistics will increase. Therefore, the principle of ion fluence rate selection in the actual effect test is Ensure that the number of single event flips that occur within a readback cycle is as small as possible compared to the storage capacity of the device, specifically:

For storage devices with an integration degree of less than 1Mbit, ensure that the number of flips tested in each readback cycle during irradiation is less than 0.01% of the total chip capacity; The number of flips is not more than 100, so that the worst probability of a "false" multi-bit flip is less than 1×10 ^-3 .

The probability λ of a "false" multi-bit flip when E _SGL flips are accumulated in a readback cycle can be expressed as:

$\mathrm{<span\; class="notranslate">\; \&lambda;</span>}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; E.</span>}}_{\mathrm{<span\; class="notranslate">\; SGL</span>}}<span\; class="notranslate">\; \&times;</span>\mathrm{<span\; class="notranslate">\; AdjCell</span>}}{\mathrm{<span\; class="notranslate">\; N</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; )</span>$

Among them, E _SGL is the number of single event turnover recorded in a readback cycle during the irradiation process, N indicates the integration degree of the storage device, that is, the storage capacity, AdjCell indicates the number of storage units that may be recorded as MCU around a storage unit turnover, usually Physically completely adjacent memory cells are recorded as multi-bit flips only when flips occur, so AdjCell takes 8 during calculation.

Considering the statistical confidence of the data, the estimated number of single event flips mentioned in step 1.2] should accumulate to more than 100 but the flip number should not exceed 1% of the storage capacity of the device, and the maximum ion fluence should not exceed 1E7cm ^-2 .

The establishment of the mapping relationship between the logical address of the device and the physical address in the above step 2.1] is based on the device information provided by the design manufacturer or adopts the method of reverse design or the method of positioning and identification of heavy ion microbeam and laser microbeam.

The statistical method for the number of single event events in the above step 2.2] is "all single event flips caused by an ion are regarded as one event, no matter it is a single flip or a multi-bit flip, the event is only recorded once".

The above step 2.3] characterizes and quantifies the single-event multi-position inversion, and the characterization parameters include U-shape, which is the single-event inversion cross-section, E-shape, which is the single-event event cross-section, single-event multi-bit inversion event cross-section, single-event unit inversion event cross-section, The mean value of multi-bit flipping, the probability of multi-bit flipping, and the probability of a single event event with i-bit flipping, the specific characterization methods are as follows:

The U-shape is the single-event flip cross section σ _U-SEU , expressed as:

${\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; u</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; SEUs</span>}}<span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}\frac{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span>}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; )</span>$

Type E is the single event event cross section σ _E-SEU , expressed as:

${\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; E.</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; SEUs</span>}}<span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 2</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 4</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span>}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; )</span>$

Where Event i-bit is the number of single event events with i-bit flip, Φ is the total fluence of incident ions;

The event cross-section σ _MCU of single-event multi-bit flipping is expressed as:

${\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; MCU</span>}}<span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 2</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 4</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span>}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 4</span>}<span\; class="notranslate">\; )</span>$

Single event unit flipping event cross section

${\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; SBUs</span>}}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 5</span>}<span\; class="notranslate">\; )</span>$

Multi-bit flip mean Mean:

$\mathrm{<span\; class="notranslate">\; mean</span>}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; u</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; SEUs</span>}}}{{\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; E.</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; SEUs</span>}}}<span\; class="notranslate">\; =</span>\frac{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 2</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 6</span>}<span\; class="notranslate">\; )</span>$

Multi-bit flip probability, expressed as:

$\mathrm{<span\; class="notranslate">\; Probability\; of\; MCU</span>}<span\; class="notranslate">\; =</span>\frac{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 2</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 7</span>}<span\; class="notranslate">\; )</span>$

where the denominator is the sum of all single-event events, and the numerator is the sum of multi-bit flip events with 2-bit flips and more;

The probability of a single event event Event _i-bit with i-bit flip is expressed as

$\mathrm{<span\; class="notranslate">\; Probability\; of</span>}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 8</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; .</span>$

After step 2.3], it also includes drawing a relationship curve between one or more of the single particle characterization parameters and one or more of the heavy ion LET value, ion incident angle, filling pattern, and operating voltage.

Compared with the prior art, the present invention has the advantages of:

1. The quantitative analysis method of heavy ion single particle multi-bit flipping effect of the present invention reduces the occurrence probability of "false" mostly flipping by controlling the fluence rate, and establishes the mapping relationship from the logical address of the device to the physical address to be able to Objectively reflect whether the storage unit where the single event flip occurs is physically adjacent, so that it can be judged whether it is a real single event multi-bit flip to eliminate "pseudo" multi-bit flip, and realize the evaluation of the anti-single event flip of the device under test detection.

2. The present invention can provide a basis for establishing a scientific and reasonable simulation test method for the heavy ion single event effect of small-scale devices.

3. The present invention can provide technical means and information for device anti-single event flipping reinforcement design, and verify and evaluate the effectiveness of the reinforcement technology.

4. The present invention is also applicable to the acquisition and processing of test data for multi-position flipping of proton and neutron single particles.

Description of drawings

Fig. 1 is the quantitative analysis method of the heavy ion single particle multi-position flip effect of the device of the present invention;

Fig. 2 is the decoding figure of the device in the embodiment of the present invention;

Figure 3 is a physical bitmap display of single event flip data in a certain readback period when Cl ions are irradiated;

Figure 4 is the physical bitmap display of single event flip data in all readback cycles of Cl ions;

Fig. 5 is the relationship curve of single event unit flip and multi-bit flip event probability, multi-bit flip average and LET value.

Figure 6 shows the number of single-event multiple-bit flip events with different topological patterns in all readback cycles when Cl ions are irradiated.

specific implementation

Taking a certain static memory H328X circuit as an example, the specific implementation of the present invention will be described in detail in conjunction with the accompanying drawings. H328X is a synchronous single-port SRAM circuit with a storage capacity of 32K×8 bits and a total of 256Kbit. The following example is only used to illustrate the present invention , but not to limit the scope of the present invention.

FIG. 1 is a flow chart of a quantitative analysis method for the heavy ion single particle multi-position flipping effect of a device according to an embodiment of the present invention. The method is described in detail with reference to FIG. 1 .

(1) Before the test, the sample is opened and the functional parameters are tested. After the test is passed, the sample is inserted on the PCB irradiation board, fixed at the test position by the sample holder, and aligned and positioned. Connect the test system, power supply circuit and PCB irradiation board, and conduct power-on test on the test sample to ensure the normal operation of the sample and test system.

(2) Select Br ions to start the heavy ion irradiation test. The test system reads back at high speed. It takes about 4ms for the system to complete a cycle of detection, and records the logical address and data of the storage unit where the single event flip occurs in each readback cycle. The principle for selecting the ion fluence rate in the effect test is to ensure that the number of flips tested in each readback cycle during irradiation is less than 0.01% of the total chip capacity, that is, no more than 25, so that the worst probability of "false" multi-bit flips occurs less than 1×2) ^-3 . Since the device is sensitive to single event effects, the irradiation was stopped when the irradiation time reached 1 minute, and the total ion flux was recorded. Then change the ion types, select Cl ions, F ions, and I ions in sequence to obtain heavy ions with different LET values, and repeat the above steps.

(3) Establish a mapping relationship from a logical address to a physical address. The physical locations of the H328X SRAM circuit memory are arranged in a certain order of addresses, as shown in Figure 2. A total of eight IP units in the memory are controlled by the address line A[14-12]. One IP unit has two blocks (A[7]), the column address is A[3-0], A3 is 0 and U is selected, and when it is 1 Select UX, the row address is A[11-8], A[6-4], where A[11-8] is 1 out of 16 row groups, A[6-4] is a small loop, within a row group Choose 1 from 8. Bit interleaving technology is adopted in the layout of the layout, and the same bits of every 8 words are placed together.

For H328X, given any 15-bit logical address, the physical location of 8 SRAM cells in a word can be found in the corresponding group according to the device address information. Example: The binary representation of logical address 7F58 is as follows:

A ₁₄ A ₁₃ A ₁₂ A ₁₁ A ₁₀ A ₉ A ₈ A ₇ A ₆ A ₅ A ₄ A ₃ A ₂ A ₁ A ₀

1 1 1 1 1 1 1 0 1 0 1 8 0 0 0

According to the following steps, the physical location of the 8 bit units corresponding to this logical address can be found.

(a) From A ₁₄ A ₁₃ A ₁₂ =(111) ₂ =7, it is known that 8 storage units are located in D7 IP unit.

(b) From A ₇ =(0) ₂ =0, it is known that the 8 storage units are located in the lower half of the D7 IP unit, that is, in the interval WL<0>-WL<127>.

(c) According to A ₁₁ A ₁₀ A ₉ A ₈ =(1111) ₂ =15, it is known that 8 storage units are located in the 15-row group, that is, in the interval WL<120>-WL<127>.

(d) From A ₆ A ₅ A ₄ =(101) ₂ =5, it is known that the 8 storage units are located in the 5th row of the 15-row group, that is, the 125th row.

(e) by A ₃ =(0) ₂ =0, it is known that the data of 8 storage units located in the U column group are selected

(f) A ₂ A ₁ A ₀ =(000) ₀ =0 belongs to W ₀ word, that is, 8 adjacent SRAM cells with the same bit bi (i=0,1,...7) in 8 U column groups Points to column 0.

If the data bit b ₁ of the logical address 7F58 has a single-event flip, the physical address points to column 0 of the U1 column group.

Compile the bitmap mapping software that maps logical addresses to physical addresses. The interface is shown in Figure 3. The right half of the interface can choose any readback time, and the logical address and physical address of the memory unit that has been flipped and the corresponding flipped bits are given; the left The half part is an overview map of the chip array, which is used to map the physical location of the flipped memory cells. The software can not only give the physical bitmap of single event flips in each readback cycle, and perform accurate judgment and statistics on multi-bit flips, but also give the total single particle flip imaging image of the device accumulated to a certain fluence, so as to verify the beam flow. The uniformity of spots and the accuracy of bitmap mapping are shown in Figure 4.

(4) Based on the bitmap software, count the number of single-event flips and the number of single-event events in each readback cycle. The number of single-event events includes the number of single-bit flip events and the number of multi-bit flip events, and record each multi-bit flip event at the same time The corresponding multi-bit flip topological graph. Then, the number of single event events of each type in all readback cycles is accumulated separately, and the number of single event events with i-bit flip is counted, that is, Eventi-bit. Table 1 only lists the number of single-event turnovers, the number of single-event events, and the number of single-event events at each readback time and the total number of single-event events when Cl ions are irradiated for 1 minute. Table 2 gives the event counts of single-event multiple-bit flips with different topological patterns.

Table 1 Statistical table of the number of single-event turnovers and the number of single-event multiple-bit turnover events in all readback periods when Cl ions are irradiated

(5) Based on the statistical information of the data, combined with the heavy ion fluence provided by the accelerator, and according to the definition of different parameters of the multi-bit flip given in (1-2)-(1-8), calculate the single-event events with different flip bits The calculation results are shown in Table 2, and the probability of single event unit flipping and multi-bit flipping event probability, the average value of multi-bit flipping and the LET value are plotted, as shown in Figure 5.

Table 2 Calculation results of single-bit flip and multi-bit flip probability, mean value, and cross-section for different heavy ions in LET

Claims (10)

1. a quantitative analysis method of the heavy ion single particle multi-position inversion effect of a device, is characterized in that, comprises the following steps: 1] Data acquisition 1.1] Beam parameter setting Select the type of heavy ions, and select the appropriate fluence rate for irradiation according to the LET value of the heavy ions; 1.2] Test Record the logical address and data of the storage unit where the single event flip occurs in the device, and stop the irradiation when the expected number of single event flips or the maximum ion fluence are reached; 2] Data processing 2.1] Establish a mapping relationship from device logical address to physical address to form a physical bitmap; 2.2] According to the physical bitmap, count the number of single-event flips and single-event events in each readback cycle and all readback cycles. The number of single-event events includes the number of single-bit flip events and the number of multi-bit flip events. The multi-bit flip topological graph corresponding to the bit flip event; 2.3] Based on the data statistical information in step 2.2], combined with the heavy ion fluence, characterize the single event multi-position flip, and realize the quantitative analysis of the single-event multi-position flip effect of the device. 2. the quantitative analysis method of the heavy ion single particle multi-position inversion effect of device according to claim 1, is characterized in that: Between step 1.2] and step 2.1] also include: 1.3] After adjusting the incident angle of heavy ions, device filling pattern or operating voltage, proceed to 1.2] test steps. 3. the quantitative analysis method of the heavy ion single particle multi-position inversion effect of device according to claim 2, is characterized in that: Between step 1.3] and step 2.1] also include: 1.4] Select a new type of heavy ion, change the heavy ion LET value, select the appropriate fluence rate according to the heavy ion LET value for irradiation, and then proceed to 1.2] test steps. 4. the quantitative analysis method of the heavy ion single particle multi-position inversion effect of device according to claim 3, is characterized in that: Between step 1.4] and step 2.1] also include: 1.5] After adjusting the incident angle of heavy ions, device filling pattern or operating voltage, proceed to the steps of 1.2] test. 5. according to the quantitative analysis method of the heavy ion single particle multi-position inversion effect of the device described in claims 1 or 2 or 3 or 4, it is characterized in that: In the step 1.1] when the beam parameters are set, the selection principle of the fluence rate is specifically as follows: For storage devices with an integration degree of less than 1Mbit, ensure that the number of flips tested in each readback cycle during irradiation is less than 0.01% of the total chip capacity; The number of flips is not more than 100, so that the probability of a "false" multi-bit flip is controlled to be less than 1×10 ^-3 . 6. the quantitative analysis method of the heavy ion single particle multi-position flip effect of the device according to claim 5, is characterized in that: The estimated number of single-event inversions mentioned in step 1.2] should accumulate to more than 100 but the number of inversions should not exceed 1% of the storage capacity of the device, and the maximum ion fluence should not exceed 1E7cm ^-2 . 7. the quantitative analysis method of the heavy ion single particle multi-position flipping effect of device according to claim 5, it is characterized in that: Step 2.1] The establishment of the mapping relationship between the logical address of the device and the physical address is based on the device information provided by the design manufacturer or adopts the method of reverse design or adopts the method of positioning and identification of heavy ion microbeam and laser microbeam. 8. the quantitative analysis method of the heavy ion single particle multi-position flip effect of the device according to claim 7, is characterized in that: The statistical method for the number of single-event events in step 2.2] is "all single-event inversions caused by one ion are regarded as one event, and no matter whether it is a single-event inversion or a multi-bit inversion, the event is only recorded once". 9. according to the quantitative analysis method of the heavy ion single particle multi-position inversion effect of device according to claim 8, it is characterized in that: In step 2.3], characterize and quantify the single-event multi-bit flipping. The characterization parameters include U-shaped single-event flip cross-section, E-type single-event event cross-section, single-event multi-bit flip event cross-section, single-event unit flip event cross-section, multiple Bit flip mean Mean, multi-bit flip probability, probability of a single event event with i-bit flip, specific characterization methods are as follows: The U-shape is the single-event flip cross section σ _U-SEU , expressed as: ${\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; u</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; SEUs</span>}}<span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}\frac{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span>}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; )</span>$ Type E is the single event event cross section σ _E-SEU , expressed as: ${\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; E.</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; SEUs</span>}}<span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 4</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span>}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; )</span>$ Where Event i-bit is the number of single event events with i-bit flip, Φ is the total fluence of incident ions; The event cross-section σ _MCU of single-event multi-bit flipping is expressed as: ${\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; MCU</span>}}<span\; class="notranslate">\; =</span>\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 2</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 4</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; +</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span><span\; class="notranslate">\; .</span>}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 4</span>}<span\; class="notranslate">\; )</span>$ Single event unit flipping event cross section ${\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; SBUs</span>}}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\mathrm{<span\; class="notranslate">\; \&Phi;</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 5</span>}<span\; class="notranslate">\; )</span>$ Multi-bit flip mean Mean: $\mathrm{<span\; class="notranslate">\; mean</span>}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; u</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; SEUs</span>}}}{{\mathrm{<span\; class="notranslate">\; \&sigma;</span>}}_{\mathrm{<span\; class="notranslate">\; E.</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; SEUs</span>}}}<span\; class="notranslate">\; =</span>\frac{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; \&times;</span>{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 6</span>}<span\; class="notranslate">\; )</span>$ Multi-bit flip probability, expressed as: $\mathrm{<span\; class="notranslate">\; Probability\; of\; MCU</span>}<span\; class="notranslate">\; =</span>\frac{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 2</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 7</span>}<span\; class="notranslate">\; )</span>$ where the denominator is the sum of all single-event events, and the numerator is the sum of multi-bit flip events with 2-bit flips and more; The probability of a single event event Event _i-bit with i-bit flip is expressed as $\mathrm{<span\; class="notranslate">\; Probability\; of</span>}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}<span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}{\underset{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}}{\overset{<span\; class="notranslate">\; \&infin;</span>}{\mathrm{<span\; class="notranslate">\; \&Sigma;</span>}}}{\mathrm{<span\; class="notranslate">\; event</span>}}_{\mathrm{<span\; class="notranslate">\; i</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; bit</span>}}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 8</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; .</span>$ 10. the quantitative analysis method of the heavy ion single particle multi-position inversion effect of device according to claim 9, is characterized in that: After step 2.3], it also includes drawing a relationship curve between one or more of the single particle characterization parameters and one or more of the heavy ion LET value, ion incident angle, filling pattern, and operating voltage.