CN102879730A - Single event upset characteristic testing method for partially triple modular redundancy reinforced SRAM (static random access memory) type FPGA (field programmable gate array) - Google Patents
Single event upset characteristic testing method for partially triple modular redundancy reinforced SRAM (static random access memory) type FPGA (field programmable gate array) Download PDFInfo
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- CN102879730A CN102879730A CN2012103558114A CN201210355811A CN102879730A CN 102879730 A CN102879730 A CN 102879730A CN 2012103558114 A CN2012103558114 A CN 2012103558114A CN 201210355811 A CN201210355811 A CN 201210355811A CN 102879730 A CN102879730 A CN 102879730A
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Abstract
The invention provides a single event upset characteristic testing method for partially triple modular redundancy reinforced SRAM (static random access memory) type FPGA (field programmable gate array). The method comprises the following steps: irradiating a tested device at a set fluence rate, recording a single event error for once when the output characteristic of the device is not correct and the functions of the device do not return to normal within time T1 after the particle irradiation stops, and repeating the above steps for multiple times and then calculating a single even error section; reducing the particle fluence rate continuously till the single even error section becomes stable; and repeating the above steps under at least five different LET values in total.
Description
Technical field
The invention belongs to the particle irradiation field tests, relate in particular to the method for testing of the single-particle inversion characteristic of the SRAM type FPGA after a kind of part triplication redundancy is reinforced.
Background technology
SRAM type FPGA is comprised of config memory, block storage, trigger, overall control register and half closedown structure etc., and the characteristics high with its integrated level, that dirigibility is strong, the construction cycle is short have obtained using more and more widely at space industry.Yet, the space environment of its work exists the high energy particles such as a large amount of γ photons, radiation belt electronics, high energy proton, and SRAM type FPGA is a kind of single-particle inversion Sensitive Apparatus, formed by config memory, block storage, trigger, overall control register and half closedown structure etc., every part all may produce single-particle inversion under the bombardment of high energy particle, this impact on SRAM type FPGA is particularly evident.
Modern FPGA technique is towards low-voltage, high integration future development, and this is so that the threshold value of generation space radiation response is more and more lower, and the probability that breaks down is increasing.The generation of Space Radiation Effects gently then can make the equipment operation irregularity, and is heavy then can cause equipment burnout, permanent failure.Therefore, FPGA must carry out High Reliability Design, the impact that prevents to greatest extent and solve Space Radiation Effects.
Triplication redundancy is reinforced (Triple Modular Redundancy, TMR), one of primary particle inversion resistant measure commonly used. three modules are carried out identical operation simultaneously, with the correct output of the identical output of majority as voting system, are commonly referred to three and get two.As long as two identical mistakes do not occur simultaneously, just can mask off the mistake of malfunctioning module, the output that the assurance system is correct in three modules.Because three modules are mutually independently, it is minimum probability events that mistake appears in two modules simultaneously, therefore can greatly improve the reliability of system.But triplication redundancy can increase device inside resource use amount, in some applications, owing to using resource large, and the device inside total resources is certain, can't accomplish all circuit are carried out the triplication redundancy design, the designer carries out triplication redundancy according to influence degree to affecting large part Key Circuit, and remainder is not taked triplication redundancy.Device single-particle inversion characteristic test behind this part triplication redundancy is present international difficult point, can not test out exactly the single-particle inversion characteristic of the SRAM type FPGA after the part triplication redundancy is reinforced.
Summary of the invention
Therefore, the object of the present invention is to provide the method for testing of the single-particle inversion characteristic of a kind of part triplication redundancy SRAM type FPGA, the single-particle inversion characteristic of the SRAM type FPGA after the part of detecting triplication redundancy is reinforced exactly.
The invention provides the method for testing of the single-particle inversion characteristic of a kind of part triplication redundancy SRAM type FPGA, the flow process of the method comprises as shown in Figure 1:
1) with the high energy particle of LET value greater than turn threshold, irradiation measured device under the fluence rate of setting, incorrect and when the time T 1 interior device function that stops particle beam irradiation not recovering normal when the device output characteristics, then record the single-particle mistake 1 time, reconfigure the FPGA device function, and repeatedly the repetitive irradiation measured device and calculates single-particle mistake cross section obtaining the single-particle mistake of accumulative total;
2) make that the LET value of particle is constant and fluence rate reduces, and repetition above-mentioned steps 1), obtain another single-particle mistake cross section, if the difference in this single-particle mistake cross section and a front single-particle mistake cross section is less than a predetermined value, then getting this time single-particle mistake cross section is the final single-particle mistake cross section value of measured device, if the difference in this single-particle mistake cross section and a front single-particle mistake cross section then continues to repeat this step 2 greater than a predetermined value);
3) the LET value of change particle, altogether repeating step 1 under at least 5 Different L ET values) to 2).
According to method provided by the invention, comprise that also step 3) draws the relation curve of LET value and corresponding final single-particle mistake cross section value.
According to method provided by the invention, comprise that also step 4) adopts the Weibull method that data point is fitted to curve, utilizes this curve to carry out estimating in the rail error rate.
According to method provided by the invention, wherein above-mentioned steps 1) in, repetitive irradiation measured device repeatedly is until accumulation stops irradiation when the single-particle mistake of pre-determined number occurring.
According to method provided by the invention, wherein above-mentioned steps 1) in, repeatedly the repetitive irradiation measured device stops irradiation until irradiation is accumulated when fluence reaches scheduled volume.
According to method provided by the invention, wherein above-mentioned steps 4) in, the time T 1 that stops irradiation is 20 to 50 seconds.
According to method provided by the invention, wherein step 2) described in predetermined value between 0-10%.
The present invention can test out the single-particle inversion characteristic of the SRAM type FPGA after the part triplication redundancy is reinforced exactly.
Description of drawings
Fig. 1 is the schematic diagram of the method according to this invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, the present invention is described in more detail.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
The present embodiment provides the method for testing of the single-particle inversion characteristic of a kind of part triplication redundancy SRAM type FPGA, comprising:
1) tested FPGA device being carried out the part triplication redundancy reinforces;
2) use the LET(linear energy transfer) value is greater than the high energy particle of the turn threshold of FPGA device, the fluence rate (10 of setting
2Individual particle/cm
2S) lower irradiation measured device, and during irradiation the output characteristics of test component;
3) when the device output characteristics is incorrect, stop particle beam irradiation, continue simultaneously monitoring device output characteristics;
4) if stopping irradiation T1=30 in the time of second, it is normal that device function recovers, then continue irradiation, if stop irradiation T1=30 in the time of second, it is normal that device function does not recover, then record the single-particle mistake 1 time, stop the time T 1 of irradiation by setting, that comes abatement device self repairs the impact that test result is caused;
5) reconfigure the FPGA device function, repeating step 2)-4), stop irradiation when 100 single-particle mistakes occurring until accumulate;
6) calculate single-particle mistake cross section, wherein single-particle mistake cross section equals total single-particle mistake number divided by total incident particle fluence;
7) make particle fluence rate reduce by 1 order of magnitude, (10 the particle/cm of the fluence rate after reduction
2S) lower irradiation measured device, and during irradiation the output characteristics of test component, then repeat above-mentioned steps 3)-6), the single-particle mistake cross section under the fluence rate after being reduced;
8) difference in the single-particle mistake cross section under the relatively more last fluence rate of setting and the last fluence rate of setting if both basic identical (difference for example differs in 10% less than a predetermined value) then stop irradiation, continues execution in step 9); If both differences large (difference for example differs more than 10% greater than a predetermined value), then repeating step 7), namely constantly reduce particle fluence rate, until single-particle mistake cross section tends to be steady substantially, thereby remove the impact that fluence rate causes test result;
9) the LET value of change particle, repeating step 2 under at least 5 Different L ET values altogether) to 8), obtain respectively single-particle mistake cross section value under a series of different fluence rate for each LET value, and get fluence rate when minimum (under the last fluence rate of setting) corresponding single-particle mistake cross section value as the corresponding final single-particle mistake of each LET value cross section value;
10) take at least 5 different LET values as horizontal ordinate, take the corresponding final single-particle mistake of each LET value cross section value as ordinate, draw relation curve.
In actual applications, can adopt the Weibull method that data point is fitted to curve, utilize this curve can carry out estimating in the rail error rate.
According to other embodiments of the invention, wherein above-mentioned steps 8) in, whether essentially identical predetermined value is not limited to 10% in single-particle mistake cross section, also can be 3%, 5%, 8% etc., be preferably 0-10%, those skilled in the art can adopt different predetermined values according to the needs to measuring accuracy in the practical application.
According to other embodiments of the invention, wherein above-mentioned steps 4) in, the described time T 1 that stops irradiation is preferably at 20-50 in second.
In the step 5) in the present embodiment, adopt repeated mode to obtain a plurality of samples, and with the number of times that repeats to reach certain as the foundation that repeats to finish, thereby draw the single-particle mistake cross section on the statistical significance, the number of times that repeats is more, the sample that obtains is more, and the single-particle mistake cross section on the resulting statistical significance is more near exact value, and wherein the number of times of accumulation appearance is preferably about 100 times.According to other embodiments of the invention, the total accumulation fluence that can also take to reach certain is as the foundation that repeats to finish, and the accumulation fluence preferably reaches 10
7Individual particle/cm
2About.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although with reference to embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (7)
1. the method for testing of the single-particle inversion characteristic of a part triplication redundancy SRAM type FPGA comprises:
1) with the high energy particle of LET value greater than turn threshold, irradiation measured device under the fluence rate of setting, incorrect and when the time T 1 interior device function that stops particle beam irradiation not recovering normal when the device output characteristics, then record the single-particle mistake 1 time, reconfigure the FPGA device function, and repeatedly the repetitive irradiation measured device and calculates single-particle mistake cross section obtaining the single-particle mistake of accumulative total;
2) make that the LET value of particle is constant and fluence rate reduces, and repetition above-mentioned steps 1), obtain another single-particle mistake cross section, if the difference in this single-particle mistake cross section and a front single-particle mistake cross section is less than a predetermined value, then getting this time single-particle mistake cross section is the final single-particle mistake cross section value of measured device, if the difference in this single-particle mistake cross section and a front single-particle mistake cross section then continues to repeat this step 2 greater than a predetermined value);
3) the LET value of change particle, altogether repeating step 1 under at least 5 Different L ET values) to 2).
2. method according to claim 1 comprises that also step 3) draws the relation curve of LET value and corresponding final single-particle mistake cross section value.
3. method according to claim 1 comprises that also step 4) adopts the Weibull method that data point is fitted to curve, utilizes this curve to carry out estimating in the rail error rate.
4. method according to claim 1, wherein above-mentioned steps 1) in, repetitive irradiation measured device repeatedly is until accumulation stops irradiation when the single-particle mistake of pre-determined number occurring.
5. method according to claim 1, wherein above-mentioned steps 1) in, repetitive irradiation measured device repeatedly is until irradiation accumulation fluence stops irradiation when reaching scheduled volume.
6. method according to claim 1, wherein above-mentioned steps 4) in, the time T 1 that stops irradiation is 20 to 50 seconds.
7. method according to claim 1, wherein step 2) described in predetermined value between 0-10%.
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